Abstract: A short optical fiber 2 is incorporated in a ferrule 1 having a polished front end, so as to be projected from the rear end of the ferrule. In a base member 3 in which the short optical fiber is to be fitted into a hole 3b, a V-groove 3d to which the glass portion of an optical fiber is to be fixed, and a V-groove 3e to which the coated portion is to be fixed are formed. A cover member 4 is placed on the base member. The base member 3 and the cover member 4 are clamped by clamp members 5a and 5b and the base member 3 presses to V-grooves. Wedges which are not shown are pressingly inserted between recessed 3g and 4c, and 3h and 4d, and an optical fiber 10 is inserted from the rear portion. Thereafter, the wedges are detached and the optical connector is attached to the terminal of the optical fiber 10.

Abstract: This invention relates to mixtures of organosilane-polysulphanes of the general formula (RO)3Si(CH2)xS—Sz—S(CH2)xSi(OR)3  (I) in which R means alkyl, linear or branched, having 1-8 C atoms, in particular 1-3 C atoms x means an integer from 1-8 z means 0 to 6, wherein sum of the proportions of polysulphanes in which z=0 and z=1 amounts to ≧80% by weight, providing that the proportion of compounds in which z=0 remains below 80% and the proportion of organosilanepolysulphanes in which z means an integer from 2 to 6 does not exceed a proportion of 20 wt. % in the mixtures, and to the rubber compounds produced using these mixtures, in particular for tire treads.

Abstract: An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part.

Abstract: A method of manufacturing a poly-crystalline silicon (p-Si) film includes the steps in which an excimer laser anneals an amorphous silicon (a-Si) film deposited on a glass substrate and makes the same into the poly-crystalline silicon while the glass substrate is moved in a moving direction relative to the laser. Prior to carrying out the annealing step, a couple of the laser pulses are applied to different places of the a-Si film, provided that each of the laser pulses has different energy fluence and one pulse at a time is applied to the a-Si film. The pulse applied area is divided into two sections by a reference line perpendicular to the moving direction of the glass substrate. Average grain sizes of the p-Si film in the two sections are compared to each other to determine the moving direction.

Abstract: The present invention is an optical apparatus, e.g. an image display apparatus, which enables observation of a clear image at a wide field angle with substantially no reduction in the brightness of the observation image, and which is extremely small in size and light in weight and hence unlikely to cause the observer to be fatigued. The optical apparatus has an image display device (6), and an ocular optical system (7) for leading an image of the image display device (6) to an observer's eyeball (1). The ocular optical system (7) includes, in order from the image side, a third surface (5) which forms an entrance surface, a first surface (3) which forms both a reflecting surface and an exit surface, and a second surface (4) which forms a reflecting surface. The first to third surfaces (3 to 5) are integrally formed with a medium put therebetween which has a refractive index larger than 1.

Abstract: A shadow mask manufacturing method comprising the cleaning step performs rapid cleaning by spraying a cleaning solution, which is inert with respect to the band-like thin metal plate, upon upper and lower surfaces of the band-like thin metal plate and thereby generating cavitation near the surfaces of the band-like thin metal plate by using cavitation jet means, while regulating a position of the band-like thin metal plate and preventing the cleaning solution from leaking in a direction opposite to the conveyance direction of the band-like thin metal plate by using a first leakage-preventing seal unit provided upstream the cavitation jet means.

Abstract: A helmet mounted display for mounting on a helmet includes a supporting structure removably mounted at at least one point to the helmet, a visor, mounted on the structure, and at least one optical system, for projecting an image on the visor from the side of the pilot's head. The at least one optical system is side mounted on the supporting structure, and includes a source of light and a digital reflective device or a reflective addressing device. The digital reflective device contains a plurality of micromirrors for deflecting the light source in a pixelated manner via a plurality of pixels. The deflection of the micromirror can be controlled as a function of time.

Abstract: A method of designing a layout of a semiconductor integrated circuit is provided. A logic simulation of a semiconductor integrated circuit to be designed is executed. A number of times of toggle operation of each of circuit elements constituting the semiconductor integrated circuit, which occurs during the execution of the logic simulation, is counted. A consumption power of the each of the circuit elements, determined based on the counted number of times of toggle operation thereof. Constraint conditions to be imposed on designing a layout of the circuit elements, are determined based on results of the estimation of the consumption power.

Abstract: Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure has been formed it is possible to greatly increase the film thickness uniformity of the semiconductor layer and the film thickness controllability, particularly when the semiconductor layer is being formed as an extremely thin film. As a result, it is possible to achieve improved quality and characteristics of the semiconductor substrates and make possible the deployment of such semiconductor substrates to various uses.

Abstract: A conductive interconnection for an integrate circuit between a protected node and a protecting node and its method are disclosed. The conductive interconnection comprises a stacking connector, a routing connector and a top conductive line. The stacking connector is formed to connect the protected node, which is constructed by at least one inner conductive line and at least one conductive plug, alternately. The inner conductive line has a length lower than a threshold value constrained by antenna effect. Moreover, the routing connector, extending toward the stacking connector, is formed to connect the protecting node. The top conductive line is used to connect the stacking connector and the routing connector. Accordingly, the protected node is disconnected from the protecting node prior to the formation of the top conductive line.

Abstract: A lacquering line and a method of lacquering industrially manufactured products in standard and/or special colours, having one or more guide devices (1) for the industrially manufactured products, having one or more lacquering cabins and having spraying elements (2) disposed along the guide devices (1) inside the lacquering cabins, wherein at least one lacquering cabin comprises one or more lacquering units, having one or more exchangeable small containers (6, 6a), in which the lacquer quantity required for lacquering a predetermined number of individual products is packed ready to apply, as well as having a rinsing device (9), wherein the small containers (6, 6a) and the rinsing device (9) are connectable in each case by a lacquer conveying device (7) and one or more stub lines (8) directly or via a colour changer (11) to the spraying elements.

Abstract: Compositions are provided which, when burned, produce significant levels of infrared radiation, but only limited levels of visible radiation. The basic components of the compositions include a binder, an oxidizer, and a fuel, where the binder also acts the fuel. Preferred oxidizers include those compounds which produce large quantities of infrared radiation when the flare composition is burned. Such oxidizers include potassium nitrate, cesium nitrate, rubidium nitrate, and combinations of these compounds. Selection of the binder is important in order to provide the composition with the desirable characteristics identified above. The binder of the present invention does not produce significant soot. At the same time, the binder serves to form a composition which is processible, avoids chunking, and is compatible with the oxidizers used. It has been found that polymer binders which include relatively short carbon chains (1-6 continuous carbon atoms) are preferred.

Abstract: A quadrature demodulator detects a phase angle error determined from the phase angle supplied from constellation symbols of outgoing in-phase and quadrature components of a modulated signal and and the phase angle of a NCO. The quadrature demodulator comprises a receiving circuit for receiving a quadrature modulated signal, and a local oscillator for generating a local carrier. A complex multiplier demodulates the quadrature modulated signal by complex-multiplying the quadrature modulated signal with the local carrier generated in the local oscillator. A symbol error detector detects a symbol error between the carrier of the modulated signal and the local carrier supplied from the signal demodulated at the complex-multiplier. A feedback loop controls the local carrier generated at the local oscillator by feeding back the symbol error detected at the symbol error detector to the local oscillator.

Abstract: Polyoxymethylene moulding compositions of the invention comprise (i) at least one polyoxymethylene homo- and/or copolymer, (ii) at least one conventional additive and (iii) at least one polymeric plastics material as an additive for improving the heat stability, and are distinguished in that (iii) is a copolymer which is obtainable by polymerization in bulk of a mixture of A) 60-90 parts of one or more (meth)acrylates, B) 10-40 parts of one or more (meth)acrylamides, C) per 100 parts of A)+B), >0.2 to 5 parts of molecular weight regulator and D) per 100 parts of A)+B), up to 2 parts of lipophilic free radical polymerization initiators, and in that the moulding composition comprises (iii) in an amount of 0.01 to 2 parts, based on the sum of (i)+(ii) where all the amounts relate to parts by weight (wt/wt) and A) and B) together must give 100 parts.

Abstract: The invention relates to a receiving method in a digital cellular radio system. The invention further relates to a receiver of the cellular radio network. In computing the signal to noise ratio, a reference signal is utilized which is the convolution of the estimated impulse response of a channel and the predetermined sequence. The signal to noise ratio is obtained as a ratio between the variance of the reference signal and the predetermined sequence received from the channel. The signal to noise ratio is used for weighing the diversity branches of the diversity receiver.

Abstract: A continuous fiber of titania are made having an average diameter per a monofilament of from 5 to 50 &mgr;m, which has a BET specific surface area of 10 m2/g or more, a pore volume of 0.05 cc/g or more, a volume of pores having a pore diameter of not less than 10 angstroms being 0.02 cc/g or more and an average tensile strength per a monofilament of 0.1 GPa or more, or which has an average tensile strength per a monofilament of 0.5 GPa or more.

Abstract: The invention relates to an adapter equipment (IWF), a method and an arrangement for setting up a data call terminating at a subscriber in a telecommunication network. In the invention, adaptation functions of two or more data services are integrated into a single adapter pool that has one common MSISDN number shared by all the data services. After the connection has been set up, the IWF does not try to synchronize itself according to any data service towards another network but it monitors a traffic channel arriving from the other network (ISDN, PSTN) in order to identify the data service used by the calling terminal equipment. After the IWF has identified the data service, it starts operating in the manner required by the identified data service and data transmission may begin.

Abstract: A device selectively supplying a high voltage and a ground level voltage to electrodes of an electroluminescent display panel. The voltage supply device includes a first and a second transistor connected in series, and outputs the high voltage upon turning on the first switching transistor and the ground level voltage upon turning on the second switching transistor. The device includes a circuit for selecting either an operation mode under which the device is normally operated with the high voltage or a test mode under which the device is tested under a low test voltage. The mode selection is performed by an external signal supplied to the device. Under the test mode, the switching transistors are turned on with a low gate voltage by operation of a circuit built in the device. Accordingly, the voltage supply device normally operated under the high voltage is easily tested under the low test voltage.

Abstract: In an insulation structure of a rotary electric machine, a stator winding has connection portions covered with reliable insulation resin coating. The modulus of elasticity of the insulation resin is less than a value which may not cause the insulation resin coating to peel off. The modulus of elasticity changes with the thickness of the insulation resin coating.

Abstract: Provided is a manufacturing method of a compound semiconductor having at least one layer of carbon-doped p-type semiconductor epitaxial layer by a MOVPE process, wherein carbon trichloride bromide is used as a carbon source of carbon to be added to the p-type semiconductor epitaxial layer. In the method the etching amount during growth is relatively small, and carbon can be added to a high concentration even with a large MOVPE apparatus.