Abstract: The invention relates to natural or artificial pearl in which one or more ornamental elements (4) are inserted in form of an inlay with or without a mount, wherein the outer visible top or ornamental side opposite the pearl of each inlay has a horizontal projection with a random contour and dimensions confined by the limits of the spherical surface and wherein the inner bottom side facing the pearl of each inlay is fitted with locking or anchoring means (20). Each inlay is lodged with positive-fit or at least substantially with positive-fit in an appropriately matching groove (6) (slot, cavity), locking and/or anchoring means being formed in the bottom and/or wall of said groove which interact with the corresponding inlay, preferably by positive locking according to the key-lock principle, and in or on which the inlay inserted into the groove is fixed in or on the pearl.

Abstract: A recording medium reproducing apparatus includes: an apparatus main body having a recording medium insertion opening; a flap body adapted to be attached to the apparatus main body so as to close the insertion opening; a first gear formed on the flap body, the first gear being coaxial with pivotal shafts of the flap body; a second gear provided in the apparatus main body and engageable with the first gear formed on the flap body; an arm member protruding from the front side of the apparatus main body, the arm member being retractable into the apparatus main body upon being pressed by the flap body when the flap body is closed on the apparatus main body; an interlock mechanism for simultaneously effecting the protrusion or retraction of the arm member and the rotation of the second gear provided in the apparatus main body; a first urging device for urging the interlock mechanism so as to cause the arm member to outwardly project to its fully projected position.

Abstract: A semiconductor memory device having a burn-in test capability. The semiconductor memory device includes a detection circuit, which is connected to the plurality of word lines. The detection circuit detects whether a stress voltage for a burn-in test has been applied to all of the word lines along their entire lengths in the burn-in test.

Abstract: A cascaded line-of-sight wireless communications system operating in free-space. The system provides broadband access for subscribers, allowing high speed wireless data communication across cities or towns. The system has a free-space optical network that includes at least two optical repeater block devices for receiving, amplifying, and re-transmitting optical signals, and a gateway device coupled to one of the optical repeater block devices. The system is modularly constructed in a cascaded manner to efficiently and wirelessly relay data signals across the system. Particularly, the broadband access is unaffected even in the presence of natural or men-made impediments.

Abstract: A central electrode 12 is arranged in a coiled heater electrode 10. They are buried in a SnO2-based inner area 6, and the entirety is covered by a filter 8. The volume of the inner area 6 is set at from 1×10−3 mm3 to 16×10−3 mm3, the total volume of the bead 4 is set at from 15×10−3 mm3 to 70×10−3 mm3, and the ratio of the total volume of the bead 4 to the volume of the inner area 6 is set at from four to twenty to bring the sensor resistance in CO and that in methane closer to each other and increase the selectivity from hydrogen.

Abstract: A cooling disk unit is used in a wafer chucking device and comprises first and second heat conducting disks one of which is concentrically superposed on the other in a casing. The first heat conducting disk has a first plurality of radial channels while the second heat conducting disk has a second plurality of radial channels. The first radial channels are connected to the second radial channels at either their inside ends or their outside ends so as to flow a cooling fluid from the first (or second) radial channels to the second (or first) radial channels.

Abstract: A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

Abstract: Curable fluoroelastomers comprising monomeric units formed by triazine iodinated derivative having general formula: wherein Y′ is independently H, Cl, F, CH3, or CF3, m′ and t′ are 0 or 1, and m′+t′=0 or 1, preferably m′+t′=0; p′ is an integer and is equal to 1 when t′=1, or p′=0; X′ is independently H, Cl, F, alkyl or perfluoroalkyl C1-C3, preferably F; n′ is an integer between 2 and 20, preferably between 4 and 12, more preferably between 4 and 8.

Abstract: A control system for an internal combustion engine having a plurality of cylinders and a cylinder halting mechanism for halting operation of at least one of the plurality of cylinders. The cylinder halting mechanism is controlled to operate all of the plurality of cylinders or to halt the operation of the at least one of the plurality of cylinders. The operating state of the cylinder halting mechanism is detected based on the amount of change in the detected intake pressure of the engine.

Abstract: A semiconductor device with a transistor having a first impurity region, a second impurity region, and a gate electrode formed on a semiconductor substrate. The semiconductor device also includes a first insulating film covering the transistor, and a capacitor formed on the first insulating film. The capacitor includes a dielectric film formed of either ferroelectric material or high dielectric material, and an upper electrode and a lower electrode positioned to put the dielectric film therebetween. A second insulating film is formed on the capacitor, and a wiring layer is formed on the second insulating film. A nitride film covers the wiring layer and a first silicon oxide film formed on the nitride film includes nitrogen at least at the surface thereof.

Abstract: When a starter clutch slips, a wheel driving force is calculated based on a transmitting torque of the clutch obtained from not an engine torque but the clutch pressure (engagement force) of the starter clutch (S21-12), whereby a road gradient is calculated using the driving force so calculated and an acceleration of a vehicle.

Abstract: A cylindrical honeycomb structure formed by spirally winding a strip metal flat sheet and a strip metal corrugated sheet overlapped thereon. The metal flat sheet is welded, at each turn, to the metal corrugated sheet at a plurality of axially arranged welding positions on each portion where the metal flat sheet contacts the metal corrugated sheet. Letting L be the axial length of the honeycomb structure and D be the diameter of the honeycomb structure, the maximum value L1 of distances between adjacent welding positions satisfies at least one of relationships given by L1≦/D/2 and L1≦/L/2, or the distance L2 between the outermost welding positions in the axial direction of the honeycomb structure and the outer end face of the honeycomb structure satisfies at least one of relationship given by L2≦/D/20 and L2≦/L/10.

Abstract: A cleaner for the inside of a water tank is designed to draw up water stored within the water tank for aquarium fishes such as goldfishes, tropical fishes and the like to discharge the water to the outside. In this cleaner, a draw-up pipe is comprised of a body portion, and a grip portion connected at an angle of 90° or more to the body portion. A first one-way valve and a second one-way valve are mounted within the draw-up pipe. Thus, the cleaner has a good manipulatability, so that air stored in the cleaner can be reliably discharged, and the discharging of water can be carried out reliably.

Abstract: A method for producing an electrode for a non-aqueous electrolyte battery which improves charge/discharge characteristics such as a discharge capacity and a charge/discharge cycle life and which provides improved physical properties of a coating film. The method includes the steps of wet-kneading a slurry containing an active material having a composition of LixNiyMzO2 (0.8<x<1.5, 0.8<y+z<1.2, 0≦z<0.35; M is at least one element selected from Co, Mg, Ca, Sr, Al, Mn and Fe), an electrically conductive agent, a binder and an organic solvent, and then performing a dispersion process on the wet-kneaded slurry by means of a narrow-gap-type dispersing apparatus to prepare a mixture coating material, which is then applied onto a collector.

Abstract: In a bearing apparatus for a wheel in which a hub, a constant velocity universal joint and double rows of bearings are united and one inner raceway of double rows of inner raceways, of the double rows of bearings is integrally formed with an outer joint member of the constant velocity universal joint, a stem portion of the outer joint member is fitted to the hub, an unevenness portion is formed on an inner peripheral surface of the hub or an outer peripheral surface of the stem portion or both thereof, and the hub and the outer joint member are plastically connected by expanding the hollow stem portion from an inner diameter side to an outer diameter side by caulking. Accordingly, the fitted portions of the hub and the outer joint member are prevented from being loosened.

Abstract: The internal supply voltage generating circuit includes a level trimming circuit for regulating a first reference voltage and generating a predetermined second reference voltage, and an internal reference voltage generating circuit connected to the level trimming circuit, for generating internal reference voltages using the predetermined second reference voltage. The internal supply voltage generating circuit prevents the circuit area from increasing, reduces a variation in a load when regulating a feedback voltage, and generates a plurality of highly accurate internal supply voltages.

Abstract: A semiconductor storage device conducts a late-write operation. The semiconductor storage device comprises: a memory core circuit storing data; a data latch circuit storing preceding data corresponding to a preceding write-operation; an address compare circuit comparing a preceding address corresponding to the preceding write-operation and a present address corresponding to a present read-operation so as to determine whether the preceding address and the present address match each other; and a control circuit. The control circuit controls a test read-operation to read data from the memory core circuit regardless of whether the preceding address and the present address match each other.

Abstract: The invention pertains to a nucleic acid transfer system including a translocation domain of toxins, especially of diphtheria toxin suitable for targeting a nucleic acid, e.g. a gene, to a specific cell, and obtaining expression of said nucleic acid. The nucleic acid transfer system of the invention comprises a multidomain protein component and a nucleic acid component. Furthermore, the present invention relates to the multidomain protein, a nucleic acid encoding said protein, suitable amplification and expression systems for said nucleic acid, and processes for the preparation and uses of the above subject matters.

Abstract: Disclosed is a semiconductor device for outputting an output signal with a given phase held relative to an external clock despite a difference in characteristic, a change in temperature, and a fluctuation in supply voltage. The semiconductor device comprises an input circuit for inputting the external clock and outputting a reference signal, an output circuit for receiving an output timing signal and outputting an output signal according to the timing of the output timing signal, and an output timing control circuit for controlling the output timing so that the output signal exhibits a given phase relative to the external clock.

Abstract: Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5×10−5 mm3 or more in size.