Abstract: A flash memory cell array MC having an array construction of a virtual grounding type wherein a column line B5 on one-end within the array MC is connected to a sense circuit AMP through a N-type MOSFET MV1. On erase verify, a column line B1 on another end is set to ground potential through an N-type MOSFETs MS1 and MS4. By selecting a row line W1, a current flowing from the column line B5 to the column B1 through memory elements M11 to M14 connected to the row line W1 is inspected by a sense circuit AMP, and the memory elements M11 to M14 are erase-verified at the same time.

Abstract: In a quantum well semiconductor laser in which a stripe-like multilayered structure having a cladding layer of a first conductivity type, a quantum well active layer, and a cladding layer of a second conductivity type is formed on a semiconductor substrate or a semiconductor base layer, and multilayered structures identical to the stripe-like multilayered structure are formed along two sides of the stripe-like multilayered structure with grooves interposed in between, where each groove has a width smaller at portions near end face portions of a resonator than at a central portion thereof, and a quantum well layer of the quantum well active layer has a smaller thickness at the portions near the end face portions of the resonator than at the central portion thereof.

Abstract: An upper wiring layer formed with a bonding pad portion has a stacked structure of a first titanium nitride film, a titanium film, a second titanium nitride film and an aluminum alloy film on the upper surface of an interlayer insulation layer. Also, the upper wiring has a stacked structure of titanium silicide film, the titanium film, the titanium nitride film and the aluminum alloy film.

Abstract: A semiconductor device includes an n-type low-resistance region (2) formed on a p-type monocrystalline semiconductor substrate (1), an n-type epitaxial layer (3) formed on the n-type low-resistance region (2), an insulating film (5) formed on the n-type epitaxial layer (3) and having a first opening selectively formed therein, and an n-type polysilicon film (8) having an overhung portion extending from the entire peripheral portion of the opening to the inside of the opening. An n-type polysilicon film (9) is formed downward from the bottom surface of the overhung portion, and a p-type monocrystalline silicon film (6) serving as a base is formed on the surface of the n-type epitaxial layer in the first opening. The base (6) is in contact with the n-type polysilicon films (8, 9), and the n-type emitter (10) is formed immediately below the n-type emitter polysilicon films (8, 9) to have an annular shape.

Abstract: A method of fabricating a semiconductor device includes the steps of forming a wiring layer on the surface of a semiconductor substrate, depositing a silicone film on the whole surface of the semiconductor substrate including the wiring layer by a CVD method and exposing the silicone film to oxidative plasma with enhanced frequencies including components of 1 MHz or less to change to a silicon oxide film, the depositing step and exposing step being alternately repeated in the same apparatus till the silicon oxide film having any desired thickness is obtained. The resulting silicon oxide film has the smooth surface and the high density.

Abstract: In a vertical double-diffused MOSFET comprising a semiconductor substrate of a first conductivity type, an epitaxial layer of the first conductivity type, and a gate insulating layer, a gate electrode coats the gate insulating layer. The gate electrode has a plurality of polygonal shaped opening windows and at least one slit shaped opening window. Each polygonal shaped opening window has a center positioned on each of lattice points of a two-dimensional square lattice comprising a plurality of unit cells. Each slit shaped opening window is laid on a straight line connecting two centers of two polygonal shaped opening windows which are obliquely adjacent to one another. A first insulating layer is formed on an upper surface of the gate electrode. Second insulating layers are formed on side walls of the gate electrode. A base region of a second conductivity type having a base junction depth is formed in the surface of the epitaxial layer.

Abstract: The molded type semiconductor device has a semiconductor chip mounted and molded on a lead frame. The device includes a stub which has an open end at a portion of the lead frame and which is connected to a ground electrode of the semiconductor chip, and a mold resin which molds the stub together with the semiconductor chip. The stub has a length that is a 1/4 wavelength of a signal wavelength used in the device. The stub is formed in a zigzag form or a spiral form. Due to such stub, the satisfactory grounding is ensured to accomplish a simple molded type structure and to improve circuit characteristics.

Abstract: A charge transfer device is arranged such that a plurality of first kind charge transfer electrodes and a plurality of second kind charge transfer electrodes are alternately provided on an insulating film, and every other ones of the second kind charge transfer electrodes are grouped into a first and a second group. Potential barriers are provided at upstream portions of the charge transfer region beneath the respective second kind charge transfer electrodes. A first metal interconnect interconnects commonly the first kind charge transfer electrodes, a second metal interconnect interconnects commonly the first group second kind charge transfer electrodes, and a third metal interconnect interconnects commonly the second group second kind charge transfer electrodes.

Abstract: A novel greenhouse curtain system has a plurality of movable curtains oriented vertically one above the other to form a flexible wall. Each curtain is supported by a fixed upper edge, and the vertical position of the lower extent of each curtain may be adjusted by means of a traveling spindle used to furl or unfurl the curtain. The traveling spindle rises and descends as the curtain is furled (raised) or unfurled (lowered), and is rotated by a tensioned cable wrapped in opposite directions around two drums aligned concentrically one on end of the roller bar. The cable is anchored on one end below one of the drums, and is wrapped in opposite manner respectively around both drums and passes vertically to a pulley, and then to a driving means such as a winch. The dimensions of the drums are such that the curtain remains in stable position as long as there is no movement of the cable to or from the driving means.

Abstract: An actuator for heating, cooling and climatic valves in vehicles includes a gear housing, an electric motor placed therein, a reduction gear acted on by the turning moment of the electric motor, a drive shaft and a position determining device connected thereto. A slide carrier with teeth on its perimeter allows use of an adjusting tool to make adjustments to the position determining device. Other fixing areas are provided on the slide carrier and in the driven gear which make it possible to form lock the slide carrier to the driven gear by means of a rapidly hardening substance without damaging the gear.

Abstract: A semiconductor memory device includes at least one word line, at least one memory cell coupled to the word line, a decoder circuit responding to address information to generate a word line drive signal taking one of an active level and an inactive level, a signal generator generating a reset signal tacking an active level in a reset mode and an inactive level in a selection mode, and a word line driver coupled to receive the word line drive signal and the reset signal and to the word line. The word line driver includes a first drive circuit responding to the active level of the reset signal to drive the word line to a non-selection level and maintaining the word line at the non-selection level when the word line drive signal and the reset signal are at the inactive level. A second drive circuit responds to the active level of the word line drive signal and the inactive level of the reset signal to drive the word line to a selection level.

Abstract: A disposable electronic vacuum sensor capable of detecting a relatively low vacuum pressure of about 0.04 to 0.05 inches of water. The sensor includes a body having an LED and an opening at one end, and a channel extending longitudinally into the body from the opening. A power source is housed within the body, and a pair of generally parallel first and second contact blades extend longitudinally through the channel. The first contact blade is attached to the upper surface of the channel and coupled to the LED, the LED is coupled the power source, and the power source is coupled to the second contact blade. The LED is activated by a high-sensitivity vacuum switch comprising the first and second contact blades and a thin flexible diaphragm extending longitudinally through the channel between the second contact blade and the lower surface of the channel.

Abstract: In a solid-state image sensing device in which metallic wirings for supplying drive pulses to every transfer electrodes of vertical CCD registers are provided on the vertical CCD registers, the spacings between the metallic wirings are given mutually different sizes for an effective image sensing region and an optical black region. The shape of the step part beneath a light shielding film in the optical black region is improved, and the transmission of light is prevented. Accordingly, a correct black reference level can be obtained.

Abstract: In a semiconductor device including at least two parallel conductive layers electrically isolated from each other and at least two parallel backing conductive layers opposing the two parallel conductive layers and electrically connected thereto via contact holes, a thickness of an insulating layer beneath one of the backing conductive layers is different from a thickness of an insulating layer beneath other adjacent backing conductive layers.

Abstract: A method of manufacturing a bipolar transistor including the steps of doping an impurity of the one conductivity type in a major surface portion of the semiconductor substrate to form a buried layer of the one conductivity type and growing an epitaxial layer on an entire surface on a major surface of the semiconductor substrate, forming a diffusion region of the opposite conductivity type in an emitter formation region on the major surface of the semiconductor substrate and forming a base connecting region in a base formation region to be in contact with the diffusion region of the opposite conductivity type, forming an insulating interlayer on the major surface of the semiconductor substrate including the diffusion region of the opposite conductivity type and the base connecting region, forming an emitter electrode layer contact hole reaching the diffusion region of the opposite conductivity type in an emitter formation region of the insulating interlayer and forming a collector region hole reaching the epit

Abstract: A rotating laser apparatus having a reciprocating laser scanning system which facilitates visual recognition of a laser beam on an object to be measured by raising an effective energy level on the object. In the apparatus the laser beam is rotated by a rotation device. The reciprocating laser scanning system includes reflection members for reflecting the laser beam, a laser beam detector for detecting a return laser beam reflected from the reflection means, and a control members, microcomputer a rotation of the rotation device in accordance with the output of the laser beam detector.

Abstract: In a solid state image sensor comprising a first impurity layer of a first conductivity type forming a photodiode, the impurity layer is composed of a first impurity region formed of a low concentration at a deep level, and a second impurity region formed of a high concentration at a shallow level. The first impurity region extends under a second impurity layer of a second conductivity type formed for device isolation, and also extends under a gate region of a transistor for transferring an electric charge from the photodiode to a CCD channel.

Abstract: A process for reconstructing a picture coupled into a fiber optical bundle 1) comprising optical fibers (2) is provided. It is immaterial for this process whether the optical fibers (2) are parallel or totally random in the fiber optical bundle (1). The prerequisite is that the launching sided and output sided coordinates of each optical fiber (2) are known.The picture coupled into the launching side (3) is reconstructed with the aid of the gray tones passed on by the optical fibers (2) to the output side (4). To this end a grid (5), comprising grid field (6) that are connected together without any gaps, is laid over the launching sided arrangement of the optical fibers (2).

Abstract: In an active pull down ECL apparatus including a current switch formed by an input transistor and a reference transistor, an emitter follower controlled by a collector voltage of the input transistor or the reference transistor, and an active pull down circuit connected to the emitter follower, a resistor is connected to an emitter of the input transistor or the reference transistor.