Abstract: A motion vector searching apparatus to which a reference image, an object image and weight parameters for the reference image are inputted and searches a motion vector based thereon is provides. The motion vector searching apparatus includes an inverse weighting section that generates an inverse weighted object image by performing, on the object image using the weight parameter, a weighting inverse from a weighting performed on the reference image using the weight parameter; an image comparing section that compares the generated inverse weighted object image with the reference image to obtain a comparison value indicating a degree of approximation between the two images; and a determination section that determines an optimum motion vector from the comparison value.
Abstract: The invention provides a key update system for a multihop network system including an authentication management device that manages keys using a hierarchical structure. That device constructs key information having a hierarchical structure in accordance with the structure of the multihop network. In addition, that device determines respective encryption keys for encrypting the keys based on the key information, and the communication terminals obtain the respective keys. In this system, that device includes a key tree management portion that constructs and manages the key information; an encryption portion that encrypts the keys using the keys included in the key information; and a transmission portion that transmits the encrypted keys. Each communication terminal includes a receiving portion that receives the encrypted keys; a key management portion that manages the keys that need to be held and stored by the given communication terminal; and a decryption portion that decrypts the encrypted keys.
Abstract: The present invention is relate to watermark information embedding apparatus and method for the same, watermark information detecting apparatus and method for the same, and method of containing watermark document. A document image generator (101) generates a document image according to document data (105). A watermark image generator (102) generates a watermark image. The watermark information (106) is denoted with dot pattern, and the dot pattern within the outline of the watermark information are of special value. A synthesizer (103) overlaps document image generated from the document image generator (101) and the watermark image generated from the watermark image generator (102) so as to generate a containing watermark document image.
Abstract: A vehicle transmission can comprise a plurality of gears, and a shift cam coupled to the gears to at least partly control shifting of the gears. The shift cam comprise a plurality of grooves each with respective positions corresponding to gear speeds, and further including a neutral position, wherein the neutral position is below a position corresponding to a lowest gear speed in a view of at least a portion of the shift cam. A rotation angle of the shift cam between the neutral position and a lowest step corresponding to the lowest gear speed can be different from that between any adjacent shift steps, respectively corresponding to other gear speeds.
Abstract: A liquid crystal display and the driving method thereof. The LCD includes a timing controller, a plurality of driver chips and a display panel. The driver chips are cascaded together for driving the display panel to display frames. A driver chip includes a differential receiver, a single-ended receiver, a shift register, a differential transmitter, a single-ended transmitter and a pixel driver. The driver chip receives a pixel signal and drives the display panel according to the pixel signal, and outputs the pixel signal to the next driver chip.
Type:
Grant
Filed:
April 8, 2009
Date of Patent:
June 19, 2012
Assignee:
Au Optronics Corp.
Inventors:
Chih-Sung Wang, Chih-Hsiang Yang, Chao-Liang Lu
Abstract: There are provided: a means (101a) for storing standard head related transfer functions for reference positions from a virtual listener; a means (101) for, when given information (DIR, DIST) about a virtual sound source position, forming head related transfer functions (hL(k), hR(k)) as left ear and right ear head related transfer functions by selecting one of the stored standard head related transfer functions or by selecting two or more of them and interpolating; means (102, 103) for imprinting a sense of direction and distance on the audio listening signal by using the head related transfer functions thus obtained; and means (104, 105) for correcting a distance related to the obtained head related transfer functions and the sense of distance to the virtual sound source position, in the audio listening signals (sL(n), sR(n)) given the sense of direction and distance or the source audio listening signal (s(n)). A highly precise sense of distance can be provided in a small structure.
Abstract: Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate.
Type:
Grant
Filed:
April 26, 2010
Date of Patent:
June 12, 2012
Assignee:
Electronics and Telecommunications Research Institute
Inventors:
Jae Bon Koo, Seung Youl Kang, In-Kyu You
Abstract: A manufacturing method of an electric contact and manufacturing equipment of the electric contact. A contact and a metal base are superimposed and support by a jig, and a rotational tool, which rotates at a predetermined speed and advances/retracts to/from the jig, is pressed into a surface, which is not contacted with the contact, of the metal base while being rotated, so that the contact and the metal base are joined by solid state diffusion welding by using frictional heat generated by friction between the rotational tool and the metal base, and then the rotational tool is retracted from the metal base.
Type:
Grant
Filed:
January 16, 2009
Date of Patent:
June 12, 2012
Assignee:
Fuji Electric Fa Components & Systems, Ltd.
Abstract: In a device for separating a synchronous signal in a video signal, a capacitor receives the video signal to obtain a coupling signal, a level determining circuit receives the coupling signal and compares a voltage level of the coupling signal with a number of reference voltages. The reference voltages define several reference voltage ranges, one of which is a predetermined reference voltage range. The level determining circuit outputs an adjusting signal according to a reference voltage range corresponding to a minimum voltage level of the coupling signal within a predetermined time period. A level adjusting circuit has several current sources for receiving the adjusting signal and thus controls the current sources to adjust a DC level of the coupling signal. A synchronous signal separating circuit separates the synchronous signal from the coupling signal when the minimum voltage level of the coupling signal is substantially within the predetermined reference voltage range.
Abstract: A discretely addressable large-area X-ray system is provided. The large-area X-ray system can output a uniform flux of X-rays over a large area using discrete addressing operation of transistors connected to cathodes of electron emitters. Thus, when applied to a medical device, the system can minimize damage inflicted upon the human body because it enables effective imaging of only a desired specific portion of the body. Furthermore, the large-area X-ray system can be simply implemented by current switching using transistors. Thus, the system can be very easily applied to other applications.
Type:
Grant
Filed:
November 13, 2008
Date of Patent:
June 12, 2012
Assignee:
Electronics and Telecommunications Research Institute
Inventors:
Dae Jun Kim, Yoon Ho Song, Jin Woo Jeong
Abstract: To provide a semiconductor light emitting device with a light extraction efficiency increased and a method for manufacturing the semiconductor light emitting device. A semiconductor light emitting device 1 includes a supporting substrate 2 and a semiconductor stack 6 including an MQW active layer 13 emitting light and an n-GaN layer 14 at the top. In the upper surface of the n-GaN layer 14 of the semiconductor attack 6, a plurality of conical protrusions 14a are formed. The protrusions 14a are formed so that an average WA of widths W of bottom surfaces of protrusions 14 satisfies: WA>=?/n, where ? is wavelength of light emitted from the active layer and n is a refractive index of the n-GaN layer 14.
Abstract: An echo canceler uses an adaptive filter to remove an echo of a far-end input signal from a near-end input signal. Filter coefficients are calculated and updated while the far-end signal is active. While the far-end signal is silent, substitute filter coefficients are similarly calculated to be swapped in as initial values for the filter coefficients when the far-end signal changes from silent to active. The substitute filter coefficients are generated from a simulated far-end signal and a simulated near-end signal obtained by combining corresponding samples in different intervals of the far-end and near-end input signals. To facilitate convergence of the substitute filter coefficients, use of the simulated far-end and near-end signals is disabled when the corresponding samples cancel out.
Abstract: A method of manufacturing a semiconductor device on a semiconductor substrate, includes the steps of forming a first metal film on a front surface of the semiconductor substrate; forming a second metal film on the surface of the first metal film; activating a surface of the second metal film to provide an activated surface; and forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation, wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath. Wet plating is preferably an electroless process.
Abstract: Disclosed is a method of manufacturing a semiconductor device that does not have a defect, such as wire breakage, due to an uplifted portion created at a rewiring pattern in a multilayer wire structure. Before a wiring layer is formed on an insulation layer, the insulation layer is exposed via a mask. The mask has a weak exposure part and a strong exposure part. The mask is positioned such that the weak exposure part corresponds to an arrangement position of a wire line of an underlying wiring layer, and such that the strong exposure part corresponds to an arrangement position of a via part of the underlying wiring layer. The underlying wiring layer is a layer immediately below the insulation layer.
Abstract: A semiconductor device of the present invention includes an insulating film made of a low dielectric constant material having a smaller specific dielectric constant than SiO2, a wiring trench formed in the insulating film, a first barrier film made of SiO2 or SiCO formed at least on the side surface of the wiring trench, Cu wiring mainly composed of Cu embedded in the wiring trench, and a second barrier film made of a compound containing Si, O and a predetermined metallic element covering the surface of the Cu wiring opposed to the wiring trench.
Abstract: A developer storing container includes outer and inner cases. The outer case includes first and second hollow portions. The first hollow portion includes a surrounding wall so shaped as to surround a center axis. The surrounding wall has both ends in a cross-section perpendicular to the center axis, and has an ejection opening. The second hollow portion includes first and second outer walls extending from both ends of the surrounding wall and a third outer wall disposed therebetween. The inner case is rotatably disposed in the first hollow portion, and has an opening corresponding to the ejection opening. The surrounding wall extends from one of both ends to the other of both ends at an angle greater than or equal to 180 degrees with respect to the center axis. An entire outer surface of the surrounding wall constitutes a part of an outer surface of the outer case.
Abstract: A method of manufacturing a semiconductor light emitting device employs a substrate formed by successively stacking an n-type semiconductor layered portion including an AlGaN layer, a light emitting layer containing In and a p-type semiconductor layered portion on a group III nitride semiconductor substrate having a larger lattice constant than AlGaN. This method includes the steps of selectively etching the substrate from the side of the p-type semiconductor layered portion along a cutting line to expose the AlGaN layer along the cutting line, forming a division guide groove along the cutting line on the exposed AlGaN layer, and dividing the substrate along the division guide groove.