Abstract: A DC offset cancellation circuit includes: a control signal generation unit generating i (i is a natural number) number of pulse signals having a pulse width corresponding to a DC offset amount; a current source supplying i number of currents each having a different current ratio; a switching unit determining a current quantity to be supplied to a feedback capacitor by adjusting a turn-on quantity of each of the i number of currents according to the pulse width of each of the i number of pulse signals; and an electric charge quantity regulation unit charging DC offset electric charges corresponding to current supplied from the switching unit through the feedback capacitor and transferring the DC offset electric charges charged in the feedback capacitor to a sampling capacitor through a rotary capacitor, to allow the sampling capacitor to primarily store the DC offset electric charges and then secondarily store electric charges corresponding to an input signal.

Abstract: A method for resource management on a computer system utilizing hardware and environmental information. A caller interacts with an application program interface to handle information requests with a persistent data storage device to combine information involving hardware resource information, environmental data and other system information, all both historical, present and predicted values. Application execution decisions may then made regarding hardware for the calling entity. The method may be implemented as a computer process.

Abstract: A power converter includes a small-sized inductor connected to an AC voltage input line for power factor correction and a filter for suppressing conduction noise. The inductor is connected to a rectifier and comprises first and second windings and that are wound on a common magnetic core and loosely coupled with each other. A leakage inductance component of the inductor functions as an energy storage element in a main conversion operation and an excitation inductance component of the inductor functions as a noise reduction element for suppressing an conduction noise caused by on-off operation of a switching element.

Abstract: A nano/micro-patterned optical device includes a soft film substrate and nano/micro thin wires. A surface of the soft film substrate includes a nano/micro-pattern formed through a lithography process, and the nano/micro-pattern includes a plurality of depressed grooves. The nano/micro thin wires are placed in the depressed grooves, and used to form a plurality of optical waveguides, in which the optical waveguides include at least one optical coupling region, and the optical coupling region is located on a joining position of the optical waveguides. A fabrication method of the nano/micro-patterned optical device is also provided.

Abstract: Lift-off method and half-tone photolithography are used to fabricate LCD TFT array plate. Only two photo masks are used to respectively define a first and a second metal layers to accomplish the LCD TFT array plate.

Abstract: A method maintaining an image background by multiple Gaussian models utilized to a device includes the following steps. First, the device captures an image frame having pixels to obtain background information, and then calculates the background information to establish a primary Gaussian model. Next, the device captures continuous image frames in a time period to obtain and calculate graphic information for establishing a secondary Gaussian model, and then repeates the steps to establish multiple secondary Gaussian models. Finally, the device compares two secondary Gaussian models, and then updates learning for the primary Gaussian model by the secondary Gaussian model if the graphic information of the secondary Gaussian models are attributable to the background information, or maintains the background information of the primary Gaussian model without updating the learning if anyone of the graphic information of the two secondary Gaussian models is unattributable to the background information.

Abstract: An optical device includes a core sandwiched between two clads. The core includes a planar waveguide layer with ridges protruding into one of the clads, forming a ridge waveguide structure that guides the propagation of light in the core. The core dimensions satisfy the following conditions: the ridge width is less than the total core height; the ridge height is less than the ridge width; the thickness of the planar waveguide layer is equal to or less than one-fourth of the total core height. Dimensions satisfying these conditions can be selected to provide polarization independent operation. The ridges may be arranged to define a pair of optical waveguides forming a Mach-Zehnder interferometer, an optical wavelength filter, or various other optical devices.

Abstract: An ultraviolet sensor has an ultraviolet detection diode having a depletion region 18 formed in an Si layer 16 on an insulating layer 14, an interlayer insulating film 20 formed on the ultraviolet detection diode, and a wiring 24 formed on the interlayer insulating film 20. An incident angle ? (°) of an incident light entering into the depletion region 18 and a film thickness Tsi (nm) of the depletion region 18 satisfy the following formula (1), which is also shown in FIG. 14.

Abstract: A cubic silicon carbide single crystal thin film is manufactured by a method. A sacrificial layer is formed on a surface of a substrate. A cubic semiconductor layer is formed on the sacrificial layer, the cubic semiconductor layer having at least a surface of cubic crystal structure. A cubic silicon carbide single crystal layer is formed on the cubic semiconductor layer. The sacrificial layer is etched away to release a multilayer structure of the cubic semiconductor layer and the 3C—SiC layer from the substrate. A cubic silicon carbide single crystal thin film of a multilayer structure includes an AlxGa1-xAs (0.6>x?0) layer and a cubic silicon carbide single crystal layer. A metal layer is formed on a substrate. The multilayer structure is bonded to the metal layer with the AlxGa1-xAs (0.6>x?0) in direct contact with the metal layer.

Abstract: A developer storing container includes a developer storing chamber storing a developer therein and having a side wall, and an agitating member having a shaft portion rotatably supported by the side wall. The side wall has a hollow portion surrounding the shaft portion of the agitating member. A seal member having an annular shape is provided between the hollow portion and the shaft portion. The seal member has an outer circumferential surface contacting the hollow portion, and an inner circumferential surface contacting the shaft portion. A contact pressure between the outer circumferential surface of the seal member and the hollow portion is larger than a contact pressure between the inner circumferential surface of the seal member and the shaft portion of the agitating member.

Abstract: A semiconductor device includes a semiconductor layer having a trench; a source region formed in a surface layer portion thereof adjacently to a first side of the trench; a drain region formed in the surface layer portion adjacently to a second side of the trench; a first insulating film formed in the trench; a floating gate stacked on the first insulating film and opposed to the trench, and extending over and covering only partially the source and drain regions; a second insulating film formed on the floating gate; and a control gate at least partially embedded in the trench so that a portion embedded in the trench is opposed to the floating gate through the second insulating film. The first insulating film has a thin portion in contact with the drain region and a thick portion formed by the remainder thereof which covers the entire bottom surface of the trench.

Abstract: When a communication error detection apparatus according to the present invention is initially installed, it performs a detection processing of the errors based on a sampling method in which a sampling interval of packet signals at the start of detection processing is a comparatively short. If the amount of the packet signals, which are sampled and accumulated, reaches a predetermined value, the communication error detection apparatus performs a detection processing of the errors based on another sampling method. In addition, if the detection processing of the errors is temporally released, the sampling method in which a sampling interval of packet signals is a comparatively short is used.

Abstract: A light emitting diode driving device and driving method thereof are provided. The light emitting diode driving device includes a duty cycle setup unit, a current setup unit, a control unit, and a light emitting diode driving circuit. The duty cycle setup unit is used for outputting duty cycle setup signal. The current set up unit is used for outputting a current setup signal. The control unit is used for receiving the duty cycle setup signal and the current setup signal, and outputting a current control signal and a duty cycle control signal in response to the duty cycle setup signal and the current setup signal. The light emitting diode driving circuit is used for driving at least one light emitting diode in response to the current control signal and the duty cycle control signal.

Abstract: An echo canceller, in which an adder adds a pseudo echo generated by an adaptive filter to an echo, so that the echo and the pseudo echo are canceled to each other, includes: a subband filter (8, 14) and a sampling converter (9, 15) for downsampling an audio signal; a selector switch (10, 16) which appropriately switches between a side performing the downsampling and another side performing fullband echo cancellation; and a tap arrangement controller (19) which optimizes a tap arrangement by using coefficients which are updated using a downsampled signal by the adaptive filter (11), the tap arrangement controller outputting the optimized tap arrangement to the adaptive filter (11) at time of the fullband echo cancellation.

Abstract: An image reading apparatus reads image information of an original document to produce image data having different data sizes. An image converting section converts the image information into a plurality of items of image data. A display section displays a plurality of items of information on the plurality of items of image data. A selecting section allows selecting of one of plurality of items of image data.

Abstract: A method for adjusting image is applied to an image output device. According to the method, the image output device firstly obtains a current image frame including plural pixels, and analyzes an intensity of an input image signal value of each pixel. The image output device defines each pixel having the input image signal value being smaller than a critical value as a dark pixel, and counts a number of the dark pixels to obtain a ratio of the dark pixels among all the pixels to serve as a dark pixel ratio. The image output device determines an image adjusting curve equation according to the dark pixel ratio, substitutes the input image signal values to the image adjusting curve equation, and obtains output image signal values of the pixels. Finally, the image output device combines all the output image signal values to obtain a final output image frame.

Abstract: A protection device of a slot-in optical disk drive is provided. The protection device is disposed between two linking parts of the slot-in optical disk drive. One of the two linking parts is formed with a slot, and the other one of the two linking parts is connected to an upper end of a guide pin. A lower end of the guide pin protrudes and is inserted into the slot, and a portion of the guide pin corresponding to a side of the slot is formed with a notch. As the notch engages with the slot, the situation that the guide pin slides out of the slot can be avoided.

Abstract: A gate drive device which can suppress the fluctuation of an internal power source voltage and output voltage, while reducing the number of parts by omitting a bypass capacitor connected in parallel with a semiconductor integrated circuit, is provided. The gate drive device drives the gate of an active element with a large input capacity, such as an IGBT or MOSFET, and includes a semiconductor integrated circuit. The semiconductor integrated circuit has an internal power source based on an external power source, such as a battery. The semiconductor integrated circuit incorporates a voltage drop suppressing circuit, configured so that, if an input external power source voltage momentarily drops below a minimum operating voltage, a drop of an internal power source voltage below the minimum operating voltage, and a sharp drop in a voltage output to the gate, are prevented by the voltage drop suppressing circuit.