Abstract: A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A first insulating layer is formed over the die. A recessed region with angled sidewall is formed in the peripheral area. A first conductive layer is formed over the first insulating layer outside the recessed region and further into the recessed region. A conductive pillar is formed over the first conductive layer within the recessed region. A second insulating layer is formed over the first insulating layer, conductive pillar, and first conductive layer such that the conductive pillar is exposed from the second insulating layer. A dicing channel partially through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the conductive pillar.

Abstract: A semiconductor device has a substrate with an inductor formed on its surface. First and second contact pads are formed on the substrate. A passivation layer is formed over the substrate and first and second contact pads. An insulating layer is formed over the passivation layer. The insulating layer is removed over the first contact pad, but not from the second contact pad. A metal layer is formed over the first contact pad. The metal layer is coiled on the surface of the substrate to produce inductive properties. The formation of the metal layer involves use of a wet etchant. The second contact pad is protected from the wet etchant by the insulating layer. The insulating layer is removed from the second contact pad after forming the metal layer over the first contact pad. An external connection is formed on the second contact pad.

Abstract: A semiconductor device is made by forming an integrated passive device (IPD) structure on a substrate, mounting first and second electrical devices to a first surface of the IPD structure, depositing encapsulant over the first and second electrical devices and IPD structure, forming a shielding layer over the encapsulant, and electrically connecting the shielding layer to a conductive channel in the IPD structure. The conductive channel is connected to ground potential to isolate the first and second electrical devices from external interference. A recess can be formed in the encapsulant material between the first and second electrical devices. The shielding layer extends into the recess. An interconnect structure is formed on a second surface of the IPD structure. The interconnect structure is electrically connected to the first and second electrical devices and IPD structure. A shielding cage can be formed over the first electrical device prior to depositing encapsulant.

Abstract: A semiconductor device is made by providing an integrated passive device (IPD). Through-silicon vias (TSVs) are formed in the IPD. A capacitor is formed over a surface of the IPD by depositing a first metal layer over the IPD, depositing a resistive layer over the first metal layer, depositing a dielectric layer over the first metal layer, and depositing a second metal layer over the resistive and dielectric layers. The first metal layer and the resistive layer are electrically connected to form a resistor and the first metal layer forms a first inductor. A wafer supporter is mounted over the IPD using an adhesive material and a third metal layer is deposited over the IPD. The third metal layer forms a second inductor that is electrically connected to the capacitor and the resistor by the TSVs of the IPD. An interconnect structure is connected to the IPD.

Abstract: A semiconductor device has an integrated passive device (IPD) formed on a substrate. The IPD can be a metal-insulator-metal capacitor or an inductor formed as a coiled conductive layer. A signal interconnect structure is formed on the front side or backside of the substrate. The signal interconnect structure is electrically connected to the IPD. A thin film ZnO layer is formed on the substrate as a part of an electrostatic discharge (ESD) protection structure. The thin film ZnO layer has a non-linear resistance as a function of a voltage applied to the layer. A conductive layer is formed on the substrate. The thin film ZnO layer is electrically connected between the signal interconnect structure and conductive layer to provide an ESD path to protect the IPD from an ESD transient. A ground interconnect structure is formed on the substrate and electrically connects the conductive layer to a ground point.

Abstract: An LED light system has an LED light module for inserting into a standard fixture. The fixture has a housing and cover for sealing the enclosure. The LED module contains a shell or outer surface having a matching form factor as the housing for making physical contact with the housing over a sufficient surface area to provide good thermal contact. A substrate is mounted on a support structure. A plurality of LEDs is disposed on the substrate. A heat transfer agent or medium transfers heat from the LEDs to the housing. The outer surface of the LED module spreads the heat over its surface area and firmly contacts the surface of the housing for good thermal transfer. The heat transfer medium is made of a thermally conductive material such as aluminum or copper and formed to contact a surface area of the LED module.

Abstract: A semiconductor device is made by first forming a protective layer over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

Abstract: A semiconductor package includes a semiconductor die with a plurality of solder bumps formed on bump pads. A substrate has a plurality of contact pads each with an exposed sidewall. A solder resist is disposed opening over at least a portion of each contact pad. The solder bumps are reflowed to metallurgically and electrically connect to the contact pads. Each contact pad is sized according to a design rule defined by SRO+2*SRR?2X, where SRO is the solder resist opening, SRR is a solder registration for the manufacturing process, and X is a function of a thickness of the exposed sidewall of the contact pad. The value of X ranges from 5 to 20 microns. The solder bump wets the exposed sidewall of the contact pad and substantially fills an area adjacent to the exposed sidewall. The contact pad can be made circular, rectangular, or donut-shaped.

Abstract: A method of manufacturing a semiconductor device involves providing a substrate, forming a first passivation layer over the substrate, and forming an integrated passive circuit over the substrate. The integrated passive circuit can include inductors, capacitors, and resistors. A second passivation layer is formed over the integrated passive circuit. System components are mounted to the second passivation layer and electrically connect to the second conductive layer. A mold compound is formed over the integrated passive circuit. A coefficient of thermal expansion of the mold compound is approximately equal to a coefficient of thermal expansion of the system component. The substrate is removed. An opening is etched into the first passivation layer and solder bumps are deposited over the opening in the first passivation layer to electrically connect to the integrated passive circuit. A metal layer can be formed over the molding compound or first passivation layer for shielding.

Abstract: A semiconductor package includes a substrate or leadframe structure. A plurality of interconnected dies, each incorporating a plurality of through-hole vias (THVs) disposed along peripheral surfaces of the plurality of dies, are disposed over the substrate or leadframe structure. The plurality of THVs are coupled to a plurality of bond pads through a plurality of a metal traces. A top surface of a first THV is coupled to a bottom surface of a second THV. An encapsulant is formed over a portion of the substrate or leadframe structure and the plurality of dies.

Abstract: A semiconductor device is made by providing a sacrificial substrate, forming a first insulating layer over the sacrificial substrate, forming a first passivation layer over the first insulating layer, forming a second insulating layer over the first passivation layer, forming an integrated passive device over the second insulating layer, forming a wafer support structure over the integrated passive device, removing the sacrificial substrate to expose the first insulating layer after forming the wafer support structure, and forming an interconnect structure over the first insulating layer in electrical contact with the integrated passive device. The integrated passive device includes an inductor, capacitor, or resistor. The sacrificial substrate is removed by mechanical grinding and wet etching. The wafer support structure can be glass, ceramic, silicon, or molding compound.

Abstract: A semiconductor device is made by providing a first semiconductor wafer having semiconductor die. A gap is made between the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a first through hole via (THV). A conductive lining is conformally deposited in the first THV. A solder material is disposed above the conductive lining of the first THV. A second semiconductor wafer having semiconductor die is disposed over the first wafer. A second THV is formed in a gap between the die of the second wafer. A conductive lining is conformally deposited in the second THV. A solder material is disposed above the second THV. The second THV is aligned to the first THV. The solder material is reflowed to form the conductive vias within the gap. The gap is singulated to separate the semiconductor die.

Abstract: Methods for forming flip chip interconnection, in which the bump interconnect is defined at least in part by an underfill. The underfill includes a material that is thermally cured; that is, raising the temperature of the underfill material can result in progressive curing of the underfill through stages including a gel stage and a fully cured stage. According to the invention, during at least an early stage in the process the semiconductor chip is carried by a thermode, which is employed to control the temperature of the assembly in a specified way. Also, flip chip interconnections and flip chip packages made according to the methods of invention.

Abstract: An optical sensor package that includes an optical sensor die is mounted by flip chip interconnect onto a lead frame in a “die-down” orientation, that is, with the active side of the optical sensor die facing the lead frame. An opening is provided in the lead frame die paddle (pad), and light passes from outside the package through the opening in the lead frame die pad onto light collection elements on the active side of the chip.

Abstract: A flip chip semiconductor device has a substrate with a plurality of active devices formed thereon. A contact pad is formed on the substrate in electrical contact with the plurality of active devices. A passivation layer is formed over the substrate and intermediate conduction layer. An adhesive layer is formed over the passivation layer. A barrier layer is formed over the adhesive layer. A wetting layer is formed over the barrier layer. The barrier layer and wetting layer in a first region are removed, while the barrier layer, wetting layer, and adhesive layer in a second region are maintained. The adhesive layer over the passivation layer in the first region are maintained until the solder bumps are formed. By keeping the adhesive layer over the passivation layer until after formation of the solder bumps, less cracking occurs in the passivation layer.

Abstract: A method of forming a semiconductor device includes providing a bumped wafer. A plurality of grooves is formed in an active surface of the bumped wafer. A pre-underfill layer is disposed over the active surface, filling the plurality of grooves. A first adhesive layer is mounted to the pre-underfill layer, and a back surface of the bumped wafer is ground. A second adhesive layer is mounted to the back surface of the bumped wafer. The first adhesive layer is peeled from the active surface of the bumped wafer, or the second adhesive layer is mounted to the first adhesive layer. The bumped wafer is singulated into a plurality of segments by cutting the bumped wafer along the plurality of grooves.

Abstract: A chemical distribution system affixes flexible tubing (50) along exterior surfaces (52) of a dwelling (12) and along structures (16) external to the dwelling. The tubing is attached to the exterior surfaces with clamps (54) and exposed for maintenance. The clamps are form-fitted to the tubing. Spray nozzles (58) are inserted into the openings in the tubing for dispensing a chemical solution. The openings can be pre-formed or cut into solid tubing at during installation. A connector (42) has one end coupled to a hose for receiving the chemical solution and another end coupled to the tubing. The fixed distribution system provides for precise and even application of the chemical solution with minimal operator intervention.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate having a first conductive layer disposed on a top surface of the substrate. A high resistivity layer is formed over the substrate and the first conductive layer. A dielectric layer is deposited over the substrate, first conductive layer and high resistivity layer. A portion of the dielectric layer, high resistivity layer, and first conductive layer forms a capacitor stack. A first passivation layer is formed over the dielectric layer. A second conductive layer is formed over the capacitor stack and a portion of the first passivation layer. A first opening is etched in the dielectric layer to expose a surface of the high resistivity layer. A third and fourth conductive layer is deposited over the first opening in the dielectric layer and a portion of the first passivation layer.

Abstract: A semiconductor package-on-package (PoP) device includes a first die incorporating a through-hole via (THV) disposed along a peripheral surface of the first die. The first die is disposed over a substrate or leadframe structure. A first semiconductor package is electrically connected to the THV of the first die, or electrically connected to the substrate or leadframe structure. An encapsulant is formed over a portion of the first die and the first semiconductor package.

Abstract: A semiconductor package has a substrate with a plurality of contact pads. A first semiconductor die is mounted to the substrate. First wire bonds are formed between each of the center-row contact pads of the first semiconductor die and the substrate contact pads. The first wire bonds include an electrically insulative coating formed over the shaft that covers a portion of a surface of a bumped end of the first wire bonds. An epoxy material is deposited over the first semiconductor die. A second semiconductor die is mounted to the epoxy material. Second wire bonds are formed between each of the center-row contact pads of the second semiconductor die and the substrate contact pads. The second wire bonds include an electrically insulative coating formed over the shaft of the second wire bonds that covers a portion of a surface of a bumped end of the second wire bonds.