Abstract: An information distribution system includes a roadside apparatus which transmits an utterance type provided information containing audio instruction information based on a traveling direction to be provided by the utterance type provided information. When an vehicle-mounted device receives an utterance type provided information via a communication unit from the roadside apparatus, the vehicle-mounted device outputs different utterance type provided information by an audio in accordance with the audio instruction in-formation contained in the received utterance type provided information, so that a vehicle driver can judge whether the information provided from the roadside apparatus is significant information.

Abstract: According to present invention, system on panel without complicating the process of TFT can be realized, and a light-emitting device that can be formed by lower cost than that of the conventional light-emitting device can be provided. A light-emitting device is provided in which a pixel portion is provided with a pixel including a light-emitting element and a TFT for controlling supply of current to the light-emitting element; a TFT included in a drive circuit and a TFT for controlling supply of current to the light-emitting element include a gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor film, which overlaps with the gate electrode via the gate insulating film, a pair of second semiconductor films formed over the first semiconductor film; the pair of second semiconductor films are doped with an impurity to have one conductivity type; and the first semiconductor film is formed by semiamorphous semiconductor.

Abstract: It is an object to provide a method for manufacturing an SOI substrate in which reduction in yield can be suppressed while impurity diffusion into a semiconductor film is suppressed. A semiconductor substrate provided with an oxide film is formed by thermally oxidizing the surface of the semiconductor substrate. Plasma is generated under an atmosphere of a gas containing nitrogen atoms and plasma nitridation is performed on part of the oxide film, so that a semiconductor substrate in which an insulating film containing nitrogen atoms is formed over the oxide film is obtained. After bonding the insulating film containing nitrogen atoms and a glass substrate to each other, the semiconductor substrate is split, whereby an SOI substrate in which the insulating film containing nitrogen atoms, the oxide film, a thin semiconductor film are stacked in this order is formed.

Abstract: In forming a thin film transistor, to form a film superior in quality to a film formed by a conventional CVD method and to form a film equal or superior in quality to a film formed by a thermal oxidation method at a temperature which does not affect a substrate. Plasma oxidation or plasma nitridation with a low electron temperature and a high electron density is performed to at least one of a glass substrate, a semiconductor film containing amorphous silicon formed into a predetermined pattern, a gate electrode and a wire pulled from the gate electrode, an insulating film to be a gate insulating film, and a protective film with a temperature of the glass substrate set at a temperature 100° C. or more lower than a strain point of the glass substrate.

Abstract: A device including a novel nonvolatile memory element is provided. A device including a nonvolatile memory element in which an oxide semiconductor is used as a semiconductor material for a channel formation region. The nonvolatile memory element includes a control gate, a charge accumulation layer which overlaps with the control gate with a first insulating film provided therebetween, and an oxide semiconductor layer formed using an oxide semiconductor material, which overlaps with the charge accumulation layer with a second insulating film provided therebetween.

Abstract: It is an object of the invention to provide a display device which performs high grayscale display in accordance with display contents and a game machine with an improved realistic sensation. The invention is a display device characterized by including a pixel portion which performs display based on a video signal and a driver circuit portion inputted with the video signal, wherein the driver circuit portion has a unit for controlling a grayscale in accordance with display of the pixel portion. In a liquid crystal display device, luminance of a lighting unit is controlled based on a signal from the unit for controlling a grayscale whereas a current supplied to a light emitting element is controlled in a light emitting device. By applying such a display device to a game machine, a realistic sensation can be improved.

Abstract: A semiconductor device with a built-in battery whose residual amount of the electrical energy can be detected accurately. The semiconductor device has a battery, a demodulation circuit, a control circuit which generates a signal having information about the residual amount of the electrical energy stored in the battery, and a transmission medium which displays the residual amount of the electrical energy in accordance with the signal. The demodulation circuit demodulates a signal input from an antenna which requests display of the residual amount of the electrical energy. Based on the demodulated signal, the control circuit starts to generate a signal having information about the residual amount of the electrical energy in the battery.

Abstract: An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

Abstract: The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.

Abstract: A gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a first source electrode layer and a first drain electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; and a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer. A first part, a second part, and a third part of a bottom surface are in contact with the first source electrode layer, the first drain electrode layer, and the gate insulating layer respectively. A first part and a second part of the top surface are in contact with the second source electrode layer and the second drain electrode layer respectively. The first source electrode layer and the first drain electrode layer are electrically connected to the second source electrode layer and the second drain electrode layer respectively.

Abstract: A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.

Abstract: It is disclosed that a semiconductor device includes an oxide semiconductor layer provided over a gate insulating layer, a source electrode layer, and a drain electrode layer, in which a thickness of the gate insulating layer located in a region between the source electrode layer and the drain electrode layer is smaller than a thickness of the gate insulating layer provided between the gate electrode layer and at least one of the source electrode layer and the drain electrode layer.

Abstract: There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.

Abstract: To reduce the laser threshold by efficiently exciting a light-emitting body in a solid-state dye laser with light having high density, thereby facilitating emission of laser beams, and to miniaturize a solid-state dye laser including an excitation light source. A solid-state dye laser capable of emitting laser beams by efficiently introducing light from an excitation light source to a light-emitting body incorporated in an optical resonator structure and exciting the light-emitting body with light with high density, is realized.

Abstract: Variation occurs in transistor characteristics. The present invention relates to a signal line driver circuit comprising a plurality of current source circuits respectively corresponding to a plurality of wirings, characterized in that: the plurality of current source circuits each comprise capacitor means and supply means; and the plurality of current source circuits each convert a supplied current into a voltage in accordance with a video signal, and supply a current corresponding to the converted voltage.

Abstract: The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer.

Abstract: A nitrogen-containing layer is formed over a semiconductor substrate; ions are added at a predetermined depth in the semiconductor substrate through the nitrogen-containing layer to form a separation layer; an insulating layer is formed over the nitrogen-containing layer; a surface of the insulating layer and a surface of a base substrate are bonded to each other; the semiconductor substrate is cleaved with the separation layer as a cleavage plane, so that single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween. The ions are added by irradiating the semiconductor layer with an ion beam in a rectangular shape or a linear shape while moving the semiconductor substrate relative to the ion beam in a short side direction of the ion beam.

Abstract: A roadside device (15) is provided with a corresponding table in the case where there is an item of a new version of a taste data table to take over from user taste information in an item of an old version of the taste data table. In the corresponding table, item numbers “52”, “53”, “62” and “63” in the old version of the taste table, for example, are made to correspond to item numbers “52”, “53” and “63” in the new version of the taste table. An ITS vehicle-mounted device (17) sets user taste data in the item numbers of the old version corresponding to the item numbers of the new version to default values of the items in the new version for a transmitting-destination user of the taste data table of the new version and transmits the default data to an ITS vehicle-mounted device (17) of the transmitting-destination user.

Abstract: The present invention provides a memory device which has a memory element having a simple structure in which a composition layer is sandwiched between a pair of conductive layers. With this characteristic, a memory device which is involatile, easily manufactured, and additionally recordable can be provided. A memory device of the present invention has plural memory cells, plural bit lines extending in a first direction, and plural word lines extending in a second direction which is perpendicular to the first direction. Each of the plural memory cells has a memory element. The memory element comprises a first conductive layer forming the bit line, a second conductive layer forming the word line, and a composition layer to be hardened by an optical action. The composition layer is formed between a first conductive layer and a second conductive layer.

Abstract: To provide an SOI substrate having a high mechanical strength, and a method for manufacturing the SOI substrate, a single crystal semiconductor substrate is irradiated with accelerated ions so that an embrittled region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate; the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween; the single crystal semiconductor substrate is heated to be separated along the embrittled region, so that a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween; and a surface of the semiconductor layer is irradiated with a laser beam so that at least a superficial part of the semiconductor layer is melted, whereby at least one of nitrogen, oxygen, and carbon is solid-dissolved in the semiconductor layer.