Patents Represented by Attorney Robinson Intellectual Property Law Office, P.C.
  • Patent number: 8314754
    Abstract: Variation occurs in transistor characteristics. The present invention relates to a signal line driver circuit comprising a plurality of current source circuits respectively corresponding to a plurality of wirings, characterized in that: the plurality of current source circuits each comprise capacitor means and supply means; and the plurality of current source circuits each convert a supplied current into a voltage in accordance with a video signal, and supply a current corresponding to the converted voltage.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: November 20, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hajime Kimura
  • Patent number: 8314417
    Abstract: The present invention provides a memory device which has a memory element having a simple structure in which a composition layer is sandwiched between a pair of conductive layers. With this characteristic, a memory device which is involatile, easily manufactured, and additionally recordable can be provided. A memory device of the present invention has plural memory cells, plural bit lines extending in a first direction, and plural word lines extending in a second direction which is perpendicular to the first direction. Each of the plural memory cells has a memory element. The memory element comprises a first conductive layer forming the bit line, a second conductive layer forming the word line, and a composition layer to be hardened by an optical action. The composition layer is formed between a first conductive layer and a second conductive layer.
    Type: Grant
    Filed: December 1, 2005
    Date of Patent: November 20, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji Nomura, Yasuko Watanabe, Yoshitaka Moriya
  • Patent number: 8314426
    Abstract: There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: November 20, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Chiho Kokubo, Hirokazu Yamagata, Shunpei Yamazaki
  • Patent number: 8314009
    Abstract: A nitrogen-containing layer is formed over a semiconductor substrate; ions are added at a predetermined depth in the semiconductor substrate through the nitrogen-containing layer to form a separation layer; an insulating layer is formed over the nitrogen-containing layer; a surface of the insulating layer and a surface of a base substrate are bonded to each other; the semiconductor substrate is cleaved with the separation layer as a cleavage plane, so that single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween. The ions are added by irradiating the semiconductor layer with an ion beam in a rectangular shape or a linear shape while moving the semiconductor substrate relative to the ion beam in a short side direction of the ion beam.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: November 20, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 8310000
    Abstract: A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with a first insulating layer interposed therebetween, and a gate electrode is provided over the charge accumulating layer with a second insulating layer interposed therebetween. The semiconductor layer includes a channel formation region provided in a region overlapping with the gate electrode, a first impurity region for forming a source region or drain region, which is provided to be adjacent to the channel formation region, and a second impurity region provided to be adjacent to the channel formation region and the first impurity region. A conductivity type of the first impurity region is different from that of the second impurity region.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tamae Takano, Shunpei Yamazaki
  • Patent number: 8310650
    Abstract: It is an object to prevent disordered orientation of liquid crystal molecules which is due to division of substrates even when a liquid crystal dripping method is used, and to provide a method for manufacturing a liquid crystal display device in which liquid crystal is not adversely affected even when a sealant not cured and liquid crystal are in contact. In a method for manufacturing a liquid crystal display device using a liquid crystal dripping method, a scribe groove is provided for at least one of a pair of substrates with a diamond cutter or the like before the pair of substrates are attached under reduced pressure. After the scribing, the pair of substrates are attached under reduced pressure, heat treatment for curing the sealant and aligning the liquid crystal molecules is performed, and the substrates are divided by applying impact using a breaking apparatus.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahide Kanai, Takeshi Nishi
  • Patent number: 8309443
    Abstract: It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a semiconductor film. At this point of time, an optical path difference is provided between the split beams to reduce optical interference. The optical path difference is set to have a length equivalent to the pulse width of the megahertz laser beam or more and less than a length equivalent to the pulse repetition interval; thus, optical interference can be suppressed with a very short optical path difference. Therefore, laser beams can be applied continuously and efficiently without energy deterioration.
    Type: Grant
    Filed: November 4, 2009
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koichiro Tanaka, Hirotada Oishi
  • Patent number: 8309406
    Abstract: Electric characteristics of a thin film transistor including a channel formation region including a microcrystalline semiconductor are improved. The thin film transistor includes a gate electrode, a gate insulating film formed over the gate electrode, a microcrystalline semiconductor layer formed over the gate insulating film, a semiconductor layer which is formed over the microcrystalline semiconductor layer and includes an amorphous semiconductor, and a source region and a drain region which are formed over the semiconductor layer. A channel is formed in the microcrystalline semiconductor layer when the thin film transistor is placed in an on state, and the microcrystalline semiconductor layer includes an impurity element for functioning as an acceptor. The microcrystalline semiconductor layer is formed by a plasma-enhanced chemical vapor deposition method.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Makoto Furuno
  • Patent number: 8309429
    Abstract: A plurality of single crystal semiconductor substrates are arranged and then the plurality of single crystal semiconductor substrates which have been arranged are overlapped with a base substrate, so that the base substrate and the plurality of single crystal semiconductor substrates are bonded to each other. Then, each of the plurality of single crystal semiconductor substrates is separated to form a plurality of single crystal semiconductor layers over the base substrate. Next, in order to reduce crystal defects in the plurality of single crystal semiconductor layers, the plurality of single crystal semiconductor layers are irradiated with a laser beam. The plurality of single crystal semiconductor layers are thinned by being etched before or after irradiation with a laser beam.
    Type: Grant
    Filed: September 17, 2008
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 8309884
    Abstract: The present invention is to provide a laser irradiation apparatus for forming a laser beam which has a shape required for the annealing and which has homogeneous energy distribution, by providing a slit at an image-formation position of a diffractive optical element, wherein the slit has a slit opening whose length is changeable. The laser irradiation apparatus comprises a laser oscillator, a diffractive optical element, and a slit, wherein the slit has a slit opening whose length in a major-axis direction thereof is changeable, wherein a laser beam is delivered obliquely to a substrate, and wherein the laser beam is a continuous wave solid-state, gas, or metal laser, or a pulsed laser with a repetition frequency of 10 MHz or more.
    Type: Grant
    Filed: May 4, 2005
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Koichiro Tanaka
  • Patent number: 8310474
    Abstract: When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Jun Koyama, Keitaro Imai, Shinji Maekawa, Makoto Furuno, Osamu Nakamura, Shunpei Yamazaki
  • Patent number: 8310399
    Abstract: The invention provides a wireless chip which can secure the safety of consumers while being small in size, favorable in communication property, and inexpensive, and the invention also provides an application thereof. Further, the invention provides a wireless chip which can be recycled after being used for managing the manufacture, circulation, and retail. A wireless chip includes a layer including a semiconductor element, and an antenna. The antenna includes a first conductive layer, a second conductive layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer, and has a spherical shape, an ovoid shape, an oval spherical shape like a go stone, an oval spherical shape like a rugby ball, or a disc shape, or has a cylindrical shape or a polygonal prism shape in which an outer edge portion thereof has a curved surface.
    Type: Grant
    Filed: February 13, 2012
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Konami Izumi
  • Patent number: 8305213
    Abstract: Since the chip formed from a silicon wafer is thick, the chip is protruded from the surface or the chip is so large that it can be seen through the eyes, which affects the design of a business card or the like. Hence, it is an object of the present invention to provide a new integrated circuit which has a structure by which the design is not affected. In view of the above problems, it is a feature of the invention to equip a film-like article with a thin film integrated circuit. It is another feature of the invention that the IDF chip has a semiconductor film of 0.2 mm or less, as an active region. Therefore, the IDF chip can be made thinner as compared with a chip formed from a silicon wafer. In addition, such an integrated circuit can have light transmitting characteristic unlike a chip formed from a silicon wafer.
    Type: Grant
    Filed: January 20, 2005
    Date of Patent: November 6, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuyuki Arai, Mai Akiba, Yohei Kanno, Yuko Tachimura
  • Patent number: 8304779
    Abstract: The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a pair of buffer layers formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the pair of buffer layers; and wirings formed over the pair of semiconductor films to which an impurity element imparting one conductivity type is added. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layers, and the buffer layers do not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS.
    Type: Grant
    Filed: October 27, 2008
    Date of Patent: November 6, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuhiro Jinbo
  • Patent number: 8305535
    Abstract: The present invention provides a liquid crystal display device including a liquid crystal layer disposed between a first substrate and a second substrate, a pixel electrode in a reflection region and a transmission region over the first substrate, a film for adjusting a cell gap in the reflection region over the first substrate, and an opposite electrode in the reflection region and the transmission region over the second substrate. The pixel electrode in the reflection region is provided over the film and reflects light. The pixel electrode in the transmission region transmits light. The pixel electrode in the reflection region and the transmission region includes a slit. The slit is overlapped with at least a part of a step portion which is provided by the film between the reflection region and the transmission region.
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: November 6, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hajime Kimura
  • Patent number: 8305216
    Abstract: Initialization of a semiconductor device can be efficiently performed, which transmits and receives data through wireless communication. The semiconductor device includes an antenna, a power source circuit, a circuit which uses a DC voltage generated by the power source circuit as a power source voltage, and a resistor. The antenna includes a pair of terminals and receives a wireless signal (a modulated carrier wave). The power source circuit includes a first terminal and a second terminal and generates a DC voltage between the first terminal and the second terminal by using a received wireless signal (the modulated carrier wave). The resistor is connected between the first terminal and the second terminal. In this manner, the semiconductor device and the wireless communication system can transmit and receive data accurately.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: November 6, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoaki Atsumi, Yutaka Shionoiri, Hidetomo Kobayashi
  • Patent number: 8304300
    Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
    Type: Grant
    Filed: July 1, 2010
    Date of Patent: November 6, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichiro Sakata, Toshinari Sasaki, Miyuki Hosoba
  • Patent number: 8304765
    Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: November 6, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kengo Akimoto, Shigeki Komori, Hideki Uochi, Rihito Wada, Yoko Chiba
  • Patent number: 8304094
    Abstract: It is an object to provide a light-emitting element with high luminous efficiency by using a hole transporting substance with a sufficiently high T1 level. Further, it is another object to provide a light-emitting device and an electronic appliance with low power consumption by using a hole transporting substance with a sufficiently high T1 level. The present invention provides a light-emitting element which has a first layer containing a spiro-9,9?-bifluorene derivative in which one amino group is combined and a second layer containing a phosphorescent compound between an anode and a cathode.
    Type: Grant
    Filed: February 25, 2008
    Date of Patent: November 6, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuharu Ohsawa, Sachiko Kawakami, Harue Osaka
  • Patent number: 8304350
    Abstract: A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: November 6, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hisashi Ohtani, Hiroyuki Shimada, Mitsunori Sakama, Hisashi Abe, Satoshi Teramoto