Abstract: Apparatus and system to mechanically lyse microbial cells and disintegrate particulate in liquid and recycling the lysed cells, cytoplasm and particulates to the aeration system of a wastewater treatment plant. The method of lysis is cavitation and impingement in a mill, which preferably has a plurality of stages, each with a rotor/stator set. A corresponding plurality of dividers within the mill channel the fluid sequentially through each of the plurality of stages. Orifice plates may be utilized to maximize cavitation by controlling flow into the rotors, which preferably have tapering slots to maximize cavitation.

Abstract: A fastener for combining a heat sink with an integrated circuit comprises a lateral strip and a lever. The lateral strip has a main portion with a first end formed as a first buckle that defines an aperture and a second end formed as a link for pivotally connecting the lever. Two taps extend perpendicularly downward from the lateral strip. The lever has a bottom end formed as a second buckle that defines an opening. When the fastener is applied to the heat sink that contacts with an integrated circuit which is attached on an integrated circuit base, the first and second buckles clasp two hooks of the integrated circuit base hence the two taps tightly contact with the heat sink so as to enhance the heat dissipating efficiency.

Abstract: Disclosed are a thin film transistor-liquid crystal display(TFT-LCD) improving aperture ratio and having increased storage capacitance, and a manufacturing method of the same. The TFT-LCD comprises: a glass substrate; gate bus lines arranged parallel each other on the glass substrate; data bus lines disposed perpendicular to the gate bus lines thereby defining pixel region; a thin film transistor formed adjacent to each intersection of the gate bus line and the data bus line; a transparent pixel electrode being contacted with the thin film transistor and disposed at each pixel region; a transparent storage electrode formed at a bottom of the transparent pixel electrode, wherein the transparent storage electrode forms a storage capacitance together with the pixel electrode; and a common electrode line for transmitting common signal to the storage electrode.

Abstract: Disclosed is a polysilicon thin film transistor capable of reducing leakage current in the off state and method for manufacturing the same. The polysilicon thin film transistor comprises a substrate; at least two gate electrodes formed on the substrate; an insulating layer coated on the gate electrodes; a channel layer formed on the gate insulating layer to cover the entire gate electrodes and made of polysilicon; an ion stopper formed on the channel layer corresponding to the gate electrode; impurity regions formed on the channel layer at both sides of the ion stopper; and source and drain electrodes contacted with outermost regions among the impurity regions respectively, wherein the outermost impurity regions are source and drain regions and the region between the gate electrodes is an auxiliary junction region for compensating ON current.

Abstract: It has been found that certain antihistamines can mediate the delayed dermatitis and in particular that caused by poison ivy and poison sumac or poison oak. Especially useful are antihistamines having a high degree of intrinsic activity as shown by their low oral dosage as antihistamine (0.1-10, suitably 1-2 mg), which can be topically administered at a sufficiently high active concentration to be effective in the treatment of allergic reactions. Compositions and methods of utilizing such compositions for these purposes are disclosed.

Abstract: Method of making substantially windowless open-celled polyurethane foams which have superior wiping properties is disclosed. The ingredients for making such foams comprise: a polyol, catalyst, silicon stabilizer, blowing agent, toluene diisocyananate and cell-openers and/or surfactants.

Abstract: The supporting-bar arrangement serves for hanging, directly or indirectly, articles which are to be displayed in goods and services establishments. A fundamental constituent part is formed by a support bar which has, at the front, a plug-in end which can be plugged with arresting into an axial inlet opening in a plug-in sleeve or directly into an inlet opening in a supporting structure. The plug-in sleeve is fixed in a through-passage of the supporting structure. A hook contour is provided at the plug-in end, and the plugged-in support bar is arrested in different ways, A spring element is provided in the plug-in sleeve for latching the hook contour of the support bar when the support bar is plugged into the axial inlet opening. The support bar itself serves for hanging articles, or a goods carrier is secured on one or more support bars. The supporting-bar arrangement extends, in particular, the individual and high-quality design possibilities in the construction of shops and trade fairs.

Abstract: A synchronous signal detection circuit which detect a vertical synchronous signal and a horizontal synchronous signal from composite synchronous signal, including: a reset generation means for receiving an external composite synchronous signal and an external main clock signal to generate a reset signal at falling edge of the composite synchronous signal; a counter means being reset by the reset signal received from the reset generation means and for counting the main clock signal to generate first through fourth output signals; a vertical synchronous signal detection means for receiving the second output signal of the counter means and the composite synchronous signal to detect the vertical synchronous signal of the composite synchronous signal and generating the vertical synchronous signal; and a horizontal synchronous signal detection means for receiving the third and the fourth output signals of the counter means and the reset signal of the reset generation means to detect the horizontal synchronous signa

Abstract: A refractory tube wall lining comprises a multiplicity of refractory tiles (1) which are arranged next to and above one another and each have two T-shaped slots (16) which extend over the entire height of the tile. The tiles (1) are held on the lined tube wall (2) by means of in each case two screw-like tile holders (11). Brackets which are independent of the tile holders (11) are used to support the tiles (1). Stepped top and bottom edges of the tiles (1) allow the tiles (1) to move vertically with respect to one another without the seal of the tube wall lining being lost. For the same purpose, the two side edges (14, 15) of each tile (1) are fitted with a tongue (141) or a groove (151).

Abstract: A lateral bipolar field effect transistor having a drift region of a first conductivity formed on a silicon-on insulation substrate with a buried insulation layer, a gate region of a second conductivity formed over and from the buried insulation layer separated by a channel depth, in the drift region, a source region of the first conductivity contacting with the gate region and formed on the buried insulation layer, and a drain region of the first conductivity opposite to the source region, the drain region separated from the gate region by a selected distance. The gate region comprises a plurality of cells arranged parallel to an extension of the source region, each cell separated from adjacent cell by a channel width.

Abstract: A high-voltage bushing for insulating a conductor going through a metallic wall is described herein. To allow a conventional current transformer to be used to monitor the current flowing through the conductor, an external shield is embedded in the tubular body of the bushing and electrically connected to the metallic wall. An internal shield, also embedded in the tubular body of the bushing and electrically connected to the conductor, is provided to prevent the electric field to generate high levels of partial discharge in the air surrounding the conductor in the tubular body.

Abstract: Disclosed is a method for forming gate electrodes using tungsten formed on a tungsten nitride layer by the chemical vapor deposition(CVD) process rather than the physical vapor deposition(PVD) process. According to the method for forming gate electrodes of the present invention, a silicon layer is formed as a conductive layer for gate electrodes. A tungsten nitride layer is formed on the silicon layer, and then the tungsten nitride layer is thermally treated thereby making a surface of the tungsten nitride layer a first tungsten layer. Next, a second tungsten layer is formed by using the first tungsten layer as a nucleation layer according to the CVD process. According to the present method for forming gate electrodes, tungsten can be deposited by the CVD process rather than by the PVD process. Therefore, those problems such as washing equipment and the particle source which are necessarily accompanied with the PVD process can be prevented, thereby improving productivity and yield.

Abstract: In DRAM comprising a read pass transistor, a write pass transistor and a storage transistor, a depletion transistor is connected to a source of the storage transistor. On a part of the source and drain of the depletion transistor, by forming an impurity region of same conductivity as that of the substrate on which the transistors are formed, a substrate voltage applied to the substrate is supplied to the storage transistor through the depletion transistor. An additional metal wire for connecting the source of the storage transistor to Vss voltage (ground voltage or substrate voltage) terminal and a contact hole area for such metal wire are not required. Accordingly, a high integration of the semiconductor can be accomplished and a reduction of reliability thereof can be decreased.

Abstract: An electrostatic image developer which has an improved charge retaining ratio is disclosed. The developer comprises toner particles comprising (a) a binding resin and (b) a coloring agent and having a mean particle diameter of not more than 25 &mgr;m, and (c) organic-inorganic composite particles attached or fixed to the surface or the proximity of surface of said toner particles. The composite particle contains an organic polymer framework and a polysiloxane framework, the polysiloxane framework having in the molecule thereof an organosilicon which has a silicon atom to which at least one carbon atom in said organic polymer framework combined directly, the organic-inorganic composite particles having SiO2 as a component of said polysiloxane framework at a content in the range of 10 to 90% by weight. The composite particles have a mean particle diameter in the range of 0.01 to 5 &mgr;m.

Abstract: A strain relief for an electrical cord has a body with an opening extending therethrough for accommodating an electrical cord therein. The strain relief replaces a UL knot and establishes a frictional interaction with the cord to prevent sliding relative to the cord. The cord threads through the strain relief with the strain relief forcing the cord to change directions at least once. In one embodiment, a movable bridging member extends from the body proximate to a central opening in the body. In its closed position, the bridging member provides the support around which the electrical cord is looped to change direction. A pair of opposed grippers hold the electrical cord at 90 degrees relative to the axis of the body opening.

Abstract: It is known that dihydroquinine or dihydroquinidine derivatives can be successfully used as ligands in the enantioselective dihydroxylation. The new disclosed ligand systems based on dihydroquinine/quinidine, unlike the prior art ligands, can be recycled after enantioselective dihydroxylation by precipitating and filtering the reaction medium, and be reused in the reaction medium. Also disclosed are the ligand systems (I) and (IV), process for preparing the same and their use in the enantioselective dihydroxiation of double bonds.