Patents Represented by Attorney, Agent or Law Firm Steven R. Biren
  • Photosensitive semiconductor resistor
    Patent number: 4462019
    Abstract: A photosensitive semiconductor resistor has a monocrystalline semiconductor body of one conductivity type which, on two oppositely located surfaces, is provided with an anode contact and with a cathode contact, and is constructed so that the cathode contact is a highly doped zone of the same conductivity type as the semiconductor body. The semiconductor body can be exposed to photon radiation at its surface supporting the cathode contact and the area of the anode contact is at least 1000 times larger than the area of the cathode contact. Such a photosensitive semiconductor resistor is easy to manufacture and has both a low inertia and a good sensitivity.
    Type: Grant
    Filed: February 1, 1982
    Date of Patent: July 24, 1984
    Assignee: U.S. Philips Corporation
    Inventors: Helmut Ewaldt, Gerhard Raabe, Heinz Sauermann, Rainer Burmeister
  • Compensation of 1st order transfer inefficiency effect in a C.T.D.
    Patent number: 4455666
    Abstract: Charge transfer devices exhibit transfer inefficiencies, so that a part of a transferred charge packet is left and lags the original charge packet. This results in "smearing" of the original charge packet, thereby adversely affecting the unit-function response and the frequency response of the charge transfer device. The invention provides a solution to this problem, utilizing a compensation charge derived from the original charge packet, which at a suitable instant is applied to a point where the residual charge is cancelled via a feedback loop.
    Type: Grant
    Filed: April 19, 1982
    Date of Patent: June 19, 1984
    Assignee: U.S. Philips Corporation
    Inventor: Arthur H. M. van Roermund
  • MOS Field-effect capacitor
    Patent number: 4453090
    Abstract: A field-effect capacitance includes a first region of a first conductivity type in a semiconductor layer, which region is provided with at least one contact electrode connected to a first terminal and with an insulated electrode arranged on said region and connected to a second terminal. A second semiconductor region of a second conductivity type opposite to the first conductivity type is formed in the semiconductor layer, which second region is provided with at least one contact electrode coupled to the first terminal, and with an insulated electrode arranged on said second region and connected to the second terminal. The two capacitances thus formed are then alternately operative for alternate polarities of the signal voltage. The resulting capacitance structure is suitable for high signal voltage applications, and provides a smooth transition when alternate signal polarities are applied.
    Type: Grant
    Filed: June 11, 1981
    Date of Patent: June 5, 1984
    Assignee: U.S. Philips Corporation
    Inventor: Adrianus Sempel
  • Utilizing multi-layer mask to define isolation and device zones in a semiconductor substrate
    Patent number: 4443933
    Abstract: A method is disclosed for the self-aligned manufacture of a semiconductor device having island insulation obtained by thermal oxidation. An insulating layer (preferably of silicon oxide), a layer of silicon nitride, and a layer preferably of aluminum oxide are provided successively on the semiconductor surface. In the last-mentioned layer a basic mask is formed having apertures at the area of all the semiconductor zones to be formed and at the area of the island insulation zones. From this mask the various processes are carried out via a replica mask obtained in the nitride layer.
    Type: Grant
    Filed: April 12, 1982
    Date of Patent: April 24, 1984
    Assignee: U.S. Philips Corporation
    Inventor: Michel X. M. de Brebisson
  • Charge transfer method and device for carrying out the method
    Patent number: 4443885
    Abstract: A method and device in which both positive and negative signal charges can be transferred from a first capacitance to a first point via a transistor circuit which exhibits a threshold level. For this purpose the first capacitance contains a reference charge with a positive or a negative polarity. First, the voltage on the first point is switched so that the first capcitance is charged from said first point and subsequently so that the first capcitance discharges towards the first point to its reference charge, which corresponds to said threshold level, in such a way that the net charge transfer from the first capacitance to the first point is equal to the positive or negative signal charge and the charge on the first capacitance is restored to a reference level.
    Type: Grant
    Filed: September 28, 1982
    Date of Patent: April 17, 1984
    Assignee: U.S. Philips Corporation
    Inventor: Arthur H. M. van Roermund
  • Method of providing raised electrical contacts on electronic microcircuits
    Patent number: 4442967
    Abstract: A method of providing a raised contact portion on a contact area of an electronic microcircuit in which a ball is formed at one end of a metal wire by means of thermal energy, the ball is pressed against a contact area of the electronic microcircuit and is connected to said contact area. A weakening is created in the wire near the ball and the wire is then severed at the area of the weakening to provide the desired raised contact portion.
    Type: Grant
    Filed: March 1, 1982
    Date of Patent: April 17, 1984
    Assignee: U.S. Philips Corporation
    Inventors: Hermanus A. van de Pas, Huibert A. Knobbout
  • Method of simultaneously manufacturing multiple electrical connections between two electrical elements
    Patent number: 4442966
    Abstract: A method for the simultaneous manufacture of multiple electrical connections, in particular for the electrical connection of semiconductor elements. In the method a conductive paste is used. Because the conductive paste would otherwise provide a poor electrical connection with the contact pads which are manufactured of certain metals, the paste is first polymerized and thermo-compression of the paste is then carried out on the contact pad by the simultaneous application of pressure and a rise in temperature so that the paste forms a readily conductive and reliable connection.
    Type: Grant
    Filed: October 14, 1981
    Date of Patent: April 17, 1984
    Assignee: U.S. Philips Corporation
    Inventors: Philippe Jourdain, Georges E. Florens, deceased, Georges A. L. Souquet, representative
  • Optical system which provides a collimated light beam
    Patent number: 4431267
    Abstract: An optical system which provides a collimated light beam, having a tubular holder, a semiconductor laser and a system of lenses incorporated in the holder, in which the semiconductor laser is positioned against an abutment in the axial direction of the holder and a resilient element is placed between the system of lenses and the abutment, while on the side of the system of lenses remote from the resilient element a locking element is present which, after axial adjustment in the holder, is fixed in such a location that the system of lenses, after moving in the axial direction against the pressure of the resilient element, is in the position in which its focus coincides with the laser element in the semiconductor laser.
    Type: Grant
    Filed: October 28, 1981
    Date of Patent: February 14, 1984
    Assignee: U.S. Philips Corporation
    Inventors: Johan C. J. Finck, Henricus M. M. Kessels
  • Semiconductor laser having a doped surface zone
    Patent number: 4429396
    Abstract: A semiconductor laser with a double hetero junction includes a strip-shaped semiconductor contact layer which is present on a passive layer of the same conductivity type, with a highly doped zone of the same conductivity type which extends over at least a part of the thickness of the contact layer and beside the contact layer in the passive layer so as to increase the radiation mode stability. According to the invention, the highly doped zone extends only over a part of the thickness of the passive layer in such a manner that below and beside the contact layer a difference in effective refractive index of at least 0.0005 and at most 0.005 is obtained.
    Type: Grant
    Filed: June 10, 1981
    Date of Patent: January 31, 1984
    Assignee: U.S. Philips Corporation
    Inventor: Peter J. de Waard
  • Optical transmission system having reduced modal noise
    Patent number: 4427261
    Abstract: An optical fiber (5) is coupled to an end face (5) of a semiconductor laser diode and the other end face is coupled to one end of a monomode optical waveguide. The other end of waveguide is terminated in a reflecting manner, e.g. by mirror, to reduce the coherence length of the laser. Thus, so-called "speckle patterns" are only produced in the transmission fiber over a short distance from the laser and modal noise further on in the transmission fiber can be prevented by avoiding the use of non-ideal fiber couplings or other connections having a spatial filter effect within this short distance from the laser.
    Type: Grant
    Filed: July 13, 1981
    Date of Patent: January 24, 1984
    Assignee: U.S. Philips Corporation
    Inventors: Giok D. Khoe, Christiaan H. F. Velzel
  • Method of manufacturing a semiconductor device
    Patent number: 4420872
    Abstract: A method of manufacturing an integrated circuit having at least an insulated gate field effect transistor (IGFET). Provided on the silicon surface are successively a gate oxide layer and a doped silicon layer which are patterned by etching by means of a silicon nitride-containing mask which comprises the gate electrode(s) and interconnections. Nitrogen ions are implanted in the surface parts not underlying the mask. By thermal oxidation only the edges of the silicon pattern are oxidized. By ion implantation the source and drain zones are formed, the gate electrodes serving as an implantation mask. If desired, the threshold voltage may then be adjusted by ion implantation in the channel region via the gate electrode.
    Type: Grant
    Filed: December 22, 1981
    Date of Patent: December 20, 1983
    Assignee: U.S. Philips Corporation
    Inventor: Jose Solo de Zaldivar
  • Semiconductor device having a reduced surface field strength
    Patent number: 4422089
    Abstract: A semiconductor device of the "RESURF" type has a substrate region and a superimposed semiconductor layer which forms a p-n junction with the substrate region. The semiconductor layer has an island-shaped region which is depleted at least locally up to the surface at a reverse voltage applied across the p-n junction which is well below the breakdown voltage of the p-n junction. According to the invention the island-shaped part of the semiconductor layer over at least a part of its area has a doping profile in the vertical direction with at least two overlying layer portions with different average net doping concentrations and of the same or opposite conductivity type, so as to increase the current-carrying capacity of the semiconductor layer.
    Type: Grant
    Filed: December 22, 1980
    Date of Patent: December 20, 1983
    Assignee: U.S. Philips Corporation
    Inventors: Henricus M. J. Vaes, Johannes A. Appels, Adrianus W. Ludikhuize
  • Method of manufacturing an insulated-gate field-effect transistor
    Patent number: 4408384
    Abstract: An insulated-gate field-effect transistor is disclosed which is particularly suitable for forming high-frequency transistors for a common source circuit configuration.
    Type: Grant
    Filed: August 12, 1982
    Date of Patent: October 11, 1983
    Assignee: U.S. Philips Corporation
    Inventors: Royce Lowis, Peter M. Tunbridge
  • Semiconductor device manufacture
    Patent number: 4404048
    Abstract: P-type isolation regions, which surround an island of an n-type epitaxial layer, are formed by providing a p-type dopant at a part of the surface of a p-type silicon substrate. After growing the layer a p-type dopant is also provided at the surface of the layer opposite the part of the substrate surface where the dopant is provided. The dopants are diffused into the layer until the p-type regions meet. To inhibit diffusion of the p-type dopant during epitaxial growth, an n-type dopant having a lower diffusion coefficient than that of the p-type dopant is provided at the part of the substrate surface before providing the epitaxial layer. Formation of the isolation regions can be carried out simultaneously with the formation of p-type regions of a circuit element, for example a transistor, in the islands.
    Type: Grant
    Filed: November 16, 1981
    Date of Patent: September 13, 1983
    Assignee: U.S. Philips Corporation
    Inventor: Dirk A. Vogelzang
  • Test circuit for MOS devices
    Patent number: 4398146
    Abstract: A test circuit for use in an MOS device includes two inputs, a first input which is responsive to a test signal of opposite polarity to that of the supply voltage, and a second input which is responsive to a test signal of the same polarity as that of the supply voltage but of a substantially higher magnitude than that of the supply voltage. The test circuit is enabled only when both the opposite polarity signal on the first input and the higher magnitude signal on the second input occur. In this manner a substantial immunity to spurious voltage transients of either polarity is obtained while permitting the test circuit and the circuits on the same MOS device being tested to share common terminals.
    Type: Grant
    Filed: October 14, 1980
    Date of Patent: August 9, 1983
    Assignee: U.S. Philips Corporation
    Inventors: Peter Draheim, Friedrich Hapke
  • Memory cell arrangement for a static memory
    Patent number: 4393471
    Abstract: A memory cell for a static memory, in which the number of control lines is reduced to a maximum of three by the use of a diode in one collector circuit and the series connection of a diode and a resistor in the other collector circuit of an Eccles-Jordan flip-flop, which diodes have an exponential characteristic with an exponent smaller than that of conventional diodes.
    Type: Grant
    Filed: November 10, 1980
    Date of Patent: July 12, 1983
    Assignee: U.S. Philips Corporation
    Inventors: Cornelis M. Hart, Jan Lohstroh
  • Linear transconductance amplifier
    Patent number: 4390848
    Abstract: A linear transconductance amplifier includes a differential transconductance amplifier stage and a differential correction amplifier stage. In order to achieve linear operation over a wide dynamic range, the nonlinearities generated in the transconductance amplifier stage are substantially cancelled by the nonlinearities generated in the correction amplifier stage. This is accomplished by cross-coupling the two stages and establishing the relative gain of the correction amplifier stage with respect to the transconductance amplifier stage such that the desired cancellation occurs. In a preferred embodiment, optimum cancellation occurs when the gain of the correction amplifier stage is substantially one-half the gain of the transconductance amplifier stage.
    Type: Grant
    Filed: February 12, 1981
    Date of Patent: June 28, 1983
    Assignee: Signetics
    Inventor: Robert A. Blauschild
  • Semiconductor switching device for guiding and amplifying radiation
    Patent number: 4389567
    Abstract: A semiconductor switching device for guiding and amplifying electromagnetic radiation is disclosed. An electrode pattern which defines a number of strip-shaped guiding members is provided on a layer structure analogous to that of a semiconductor laser. According to the invention the radiation guiding members have tapering juxtaposed ends in a transition area. Adjacent radiation guiding members in the transition area are situated within each other's amplification profile. The radiation guiding members are preferably separated from each other by insulation areas which do not extend to the common active layer. The invention may be used, for example, in switching radiation signals between two or more radiation paths in optical communication.
    Type: Grant
    Filed: May 30, 1980
    Date of Patent: June 21, 1983
    Assignee: U.S. Philips Corporation
    Inventors: Giok D. Khoe, Lambertus J. Meuleman, Tullio E. Rozzi
  • Method of manufacturing a semiconductor device
    Patent number: 4389273
    Abstract: A method of manufacturing a semiconductor device in which a monocrystalline material is epitaxially grown on a disc-shaped monocrystalline substrate. The substrate is placed in an elongate reactor and a gas flow in the longitudinal direction is passed over the substrate while a temperature gradient is maintained in the gas flow. The gas flow initially contains the reaction components in equilibrium with the material to be grown, and the gas flow becomes supersaturated with respect to the material to be grown as the temperature gradient is traversed. If the temperature gradient is selected so that the gas flow becomes undersaturated with respect to the material to be grown, etching will take place.
    Type: Grant
    Filed: July 15, 1981
    Date of Patent: June 21, 1983
    Assignee: U.S. Philips Corporation
    Inventors: Jan Bloem, Cornelis H. J. van den Brekel
  • Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide
    Patent number: RE31580
    Abstract: An insulated gate field-effect transistor and a method of making same, in which the channel is provided in a mesa region of a silicon body, and the channel is surrounded by thicker silicon oxide over the adjacent source and drain regions. A thinner insulating layer is over the channel, and a gate electrode on the latter. The manufacturing method involves masking the channel region while growing silicon oxide around it causing the oxide to penetrate into the silicon areas surrounding the channel to provide the channel in a mesa surrounded by the oxide.
    Type: Grant
    Filed: September 25, 1980
    Date of Patent: May 1, 1984
    Assignee: U.S. Philips Corporation
    Inventor: Else Kooi