Abstract: A semiconductor device includes transmission lines for conveying signals and transition detectors, each of which checks whether a transmission signal on each of the plurality of transmission lines is transited. If the signal is transited, its transition shape is detected. A signal mode determining unit determines signal transmission modes between adjacent transmission lines in response to output signals from the plurality of transition detectors. Delay units are coupled to the respective transmission lines for adjusting transmission delays of the transmission signals depending on corresponding output signal from the signal mode determining units.

Abstract: A semiconductor device exhibiting enhanced carrier mobility within a channel region of the semiconductor device is disclosed. The semiconductor device includes a gate stack having first and second sidewall spacers, where the gate stack is implemented above the channel region of the semiconductor device. The semiconductor device further includes first and second trenches formed adjacent to the gate stack, where the first and second trenches are conically shaped to be wider at a top portion of each trench as compared to a width of each trench below the top portion of each trench. The semiconductor device further includes strained silicon alloy formed within the first and second trenches, where a stress force exerted on the channel region of the semiconductor device is maximized at a surface of the semiconductor device below the gate stack.

Abstract: A method for fabricating a semiconductor device includes forming an interlayer dielectric layer over a substrate; forming a dual storage node contact plug to be buried in the interlayer dielectric layer, forming a first damascene pattern to isolate the dual storage node contact plug, forming a protective layer pattern inside the first damascene pattern, etching the interlayer dielectric layer to form a second damascene pattern to be coupled to the first damascene pattern, and forming bit lines inside the first and second damascene patterns.

Abstract: A semiconductor memory device includes a first memory bank and a second memory bank and a common write driver configured to drive write data to an activated memory bank of the first memory bank and the second memory bank. The common write driver of the semiconductor memory device includes a common write control block configured to generate common drive control signals corresponding to write data, and a common write drive block configured to drive transmission lines of a first memory bank or transmission lines of a second memory bank that are selected by a bank selection signal in response to the common drive control signals.

Abstract: A nonvolatile memory device includes a first node, a current source configured to have a current value determined according to a voltage supplied to the first node, and a memory cell string coupled to the first node, the memory cell string including at least one memory cell. Whether a memory cell included in the memory cell string has been programmed is determined based on the voltage supplied to the first node.

Abstract: A semiconductor device includes a substrate; a plurality of active pillars formed over the substrate; bulb-type trenches, each of the bulb-type trenches formed inside the substrate between the active pillars; buried bit lines, each of the buried bit lines being formed on a sidewall of a respective one of the bulb-type trenches; and vertical gates, each of the vertical gates being formed to surround a sidewall of a respective one of the active pillars.

Abstract: Within a system comprising a processor and a memory, a method of creating a circuit design for implementation within an integrated circuit can include inserting a placeholder block into the circuit design, wherein the circuit design includes a circuit block comprising circuitry and a circuit block interface, and wherein the placeholder block is devoid of circuitry and, responsive to receiving a user input specifying a coupling between the placeholder block and the circuit block, automatically determining a plurality of attributes of the circuit block interface. The method can include automatically generating, according to the attributes and by the processor, a placeholder interface within the placeholder block, wherein the placeholder interface is complementary to the circuit block interface. The placeholder block can be stored within the memory.

Abstract: A shift register includes a shift circuit configured to shift an input signal in synchronization with a shift dock to output an output signal of the shift register, and a clock control circuit configured to enable the shift clock in response to the input signal and disable the shift clock in response to the output signal of the shift register.

Abstract: A semiconductor device includes an overdriving control circuit configured to generate a first drive signal and a second drive signal in response to an internal signal of an active command mode, an equalizing signal generating unit configured to generate an equalizing signal which is controlled with an overdriving voltage VPP level higher than a normal drive voltage during a first duration of an activation period and with the normal drive voltage VDD during a second duration of the other activation period after the first duration in response to the first drive signal and the second drive signal, and an equalization unit configured to equalize first and second lines in response to the equalizing signal.

Abstract: A method and apparatus for the detection and correction of soft errors existing within an integrated circuit (IC). Run-time check stops are utilized in conjunction with processor-based, hardware mechanisms to detect and correct soft errors. At run-time, each check stop facilitates a snap shot of the hardware and/or software state of the IC to be stored into hardware and/or software based memory. Should a soft error be detected, execution is halted and the executable state of the IC that conforms to a previous check-stop location may be re-established after the soft error(s) are optionally corrected. In alternate embodiments, hardware based mechanisms may be exclusively utilized to both detect and correct the soft errors.

Abstract: A static random access memory (SRAM) can include a plurality of columns forming a memory array, wherein each column comprises a plurality of memory cells coupled to bitlines and wordlines, and a write replica circuit generating a signal when data has been written to the write replica circuit. A wordline of the memory array is turned off responsive to the signal. The write replica circuit can include an additional column comprising at least one dual port dummy memory cell, and write detection circuitry coupled to the dual port dummy memory cell detecting when data has been written to the dual port dummy memory cell and responsively generating the signal. The signal generated by the write detection circuitry indicates a successful write operation to the dual port dummy memory cell.

Abstract: Within an integrated circuit comprising a memory controller, a method can include, responsive to determining that the memory controller is performing a refresh operation, calculating a new tap setting according to a new maximum value and an old tap setting of the delay circuit. The new maximum value specifies a number of taps of the delay circuit that approximates a predetermined time span. The method can include dynamically adjusting a delay applied to a signal by a delay circuit according to the new tap setting. The delay circuit generates a delayed signal that is provided to the memory controller.

Abstract: A computer-implemented method of identifying timing paths of a circuit block can include representing a circuit block including at least one bypassable component as a block diagram having a plurality of elements linked by nodes. The method can include generating a map file including a text description of each element within the block diagram, wherein the text description of each element specifies a bypass indicator for the element. The method also can include generating a plurality of sub-paths from the map file, determining timing paths from the plurality of sub-paths by selectively combining different ones of the plurality of sub-paths according to commonality of starting points and ending points of the plurality of sub-paths, and outputting the timing paths.

Abstract: A semiconductor device for applying an auto clock alignment training mode to reduce the time required for a clock alignment training operation. The semiconductor device adjusts the entry time of the auto clock alignment training mode to prevent the clock alignment training operation from malfunctioning. The semiconductor device includes a clock division block configured to divide a data clock to generate a data division clock, a phase multiplex block configured to generate a plurality of multiple data division clocks in response to the data division clock, a logic level control block configured to set a period, in which a division control signal is changeable, depending on the data division clock, and a first phase detection block configured to detect a phase of a system clock on the basis of the multiple data division clocks in the period, and to generate the division control signal corresponding to a detection result.

Abstract: A method for fabricating a semiconductor device includes: forming a plurality of photoresist patterns over a substrate structure; forming an insulation layer for a spacer over a structure including the photoresist patterns; forming a plurality of spacers on sidewalls of the photoresist patterns by anisotropically etching the insulation layer, and forming a first opening through the insulation layer; and forming second openings in the insulation layer to expose the substrate structure.

Abstract: A distributed DNS network includes a central origin server that actually controls the zone, and edge DNS cache servers configured to cache the DNS content of the origin server. The edge DNS cache servers are published as the authoritative servers for customer domains instead of the origin server. When a request for a DNS record results in a cache miss, the edge DNS cache servers get the information from the origin server and cache it for use in response to future requests. Multiple edge DNS cache servers can be deployed at multiple locations. Since an unlimited number of edge DNS cache servers can be deployed, the system is highly scalable. The disclosed techniques protect against DoS attacks, as DNS requests are not made to the origin server directly.

Abstract: A method of processing the waste stream includes introducing the waste stream into the Fluid Catalytic Cracking Unit such that waste stream is processed within the regenerator unit or in CO boiler unit such that the waste stream and the regenerator flue gas are burned within the regenerator unit or the CO boiler unit. The waste stream contains NH3 and the NH3 is converted to the NOx and N2. The fluid catalytic cracking unit may further include an assembly for converting NOx to N2. Flue gas from the CO boiler unit containing NOx and N2 is fed to the assembly to NOx to N2 within the assembly. The assembly for converting NOx to N2 preferably includes a selective catalytic reduction unit containing a catalyst, and wherein converting NOx to N2 includes reacting the NOx with the catalyst to produce N2 and H2O.

Abstract: An adhesive blend includes a pressure sensitive adhesive and non-tacky microspheres that function as a detackifier. The non-tacky microspheres are solid, elastomeric, non-crushable, and solvent insoluble. The non-tacky microspheres are a reaction product of at alkyl (meth)acrylate monomers having from 1 to 14 carbon atoms, multifunctional (meth)acrylate and or multifunctional vinyl crosslinker, initiator, and polymeric stabilizer. The blend can be coated onto a sheet to form a pad, such as an easel pad.

Abstract: A semiconductor device includes a plurality of stacked semiconductor chips; and a plurality of through-silicon vias (TSVs) including first TSVs and redundant TSVs and configured to commonly transfer a signal to the plurality of stacked semiconductor chips. At least one of the semiconductor chips includes a plurality of repair fuse units configured to store defect information as to at least one defect of the TSVs; and a plurality of latch units allocated to the respective TSVs and configured to store a plurality of signals indicating at least one TSV defect and outputted from the plurality of repair fuse units.