Abstract: A filter reduces artifacts, such as grid noise and staircase noise, in block-coded digital images with image block boundaries. The type of filtering is determined after an estimation of the image global metrics and local metrics. For areas of the image near grid noise, the filter performs low pass filtering. For image fine details, such as edges and texture, no filtering is performed so that masking is avoided. The filter operates in intra-field mode and uses a fuzzy logic process, pixel deltas, and dual ramp generators to determine the horizontal and vertical length of a processing window surrounding an image block boundary.

Abstract: An integrated circuit memory fabrication process and structure, in which salicidation is performed on the periphery (and optionally on the ground lines) of a memory chip, but not on the transistors of the memory cells.

Abstract: A semiconductor device of the type having an integrated circuit with connection terminals connected to metal pads by connecting wires is provided. The integrated circuit includes a substrate-on-insulator type semiconductor substrate having a lower portion on top of which there is an upper insulating layer. A first semiconductor block and a second semiconductor block are produced in the upper insulating layer, and decoupling means are arranged in the upper insulating layer between the first and second semiconductor blocks. The first semiconductor block defines a first capacitor with the lower portion of the substrate, the second semiconductor block defines a second capacitor with the lower portion of the substrate, and the decoupling means includes at least one semiconductor well that defines a decoupling capacitor with the lower portion of the substrate. The capacitance of the decoupling capacitor is higher than the capacitance of each of the first and second capacitors.

Abstract: In a CMOS process for making dual gate transistors with silicide, high-voltage transistors with drain extensions are produced by first defining on a semiconductor substrate, active areas for low-voltage and high-voltage transistors. A gate oxide layer and a layer of polysilicon is deposited over the substrate, which is masked and etched to produce gates for the transistors. A dielectric layer is deposited to produce spacers to the sides of the transistor gate regions, then a mask partially shields the dielectric layer over the junctions of the high-voltage transistors while the spacers are being formed. Finally, the substrate is doped in the gate and active areas of the high-voltage transistor, and in the gate and active areas of the low-voltage transistor, except those areas that are blocked by the spacers.

Abstract: An electronic level shifter device having very low power consumption includes a first voltage reference from a power supply and a second voltage reference from a ground. The shifter device includes a circuit portion with a differential cell having an output terminal and at least a first and a second input terminal. On the output terminal is a level translated signal with respect to a signal present on one of said input terminals. The device further comprises an additional circuit portion connected to a node of the differential cell and comprising at least a pull-down component inserted between said node and the second voltage reference. The pull-down component can be a MOS transistor having its conduction terminals connected between said node and the second voltage reference and its gate terminal connected to the first voltage reference of power supply by means of a series of transistors.

Abstract: An electronic memory device organized into sections which are in turn divided into blocks formed of cells and their associated decoding and addressing circuits, the cells being connected in a predetermined circuit configuration and each block being included between two opposite contact regions which are interconnected by parallel continuous conduction lines referred to as the bit lines. In the present invention, at least one interruption is provided in each bit line near a contact region by inserting a controlled switch which functions as a block selector. Advantageously, the proposed solution allows each block to be isolated individually by enabling or disabling as appropriate the switches of the cascade connected blocks.

Abstract: A method of protecting data in a semiconductor electronic memory, which includes using a protected memory portion within the matrix and respective dedicated decoding portions for storing, into the protected portion, a protection code without the address area of the matrix. The protection code can only be written and/or read through a command interpreter.

Abstract: A circuit arrangement which, in accordance with its mode of control, operates either as input circuit or as output circuit and includes a series connection with an inverter stage, a filter stage, a cross-current avoiding stage, a switching-on voltage reducing stage, a switch stage, an output driver stage, and a Miller feedback stage, which are configured in the mode of operation as an output circuit, and parallel thereto a Schmitt trigger and an analog switch that can become effective in the mode of operation as input circuit.

Abstract: Disclosed are a self-catalytic bath and a method for the deposition of Ni—P alloy on a substrate. The bath comprises nickel sulfate, sodium hypophosphite as a reducing agent, acetic acid as a buffer and traces of lead as a stabilizer. It also includes a citrate used as a complexing agent associated with a gluconate used both as a catalyst and a stabilizer. The disclosed bath makes it possible to tolerate large quantities of hypophosphite and is relatively long-lived. Furthermore, it can be used to prepare large quantities of Ni—P alloy per liter of solution.

Abstract: A nonvolatile memory device has a signature code generator generating a present signature code from an algorithm modified dynamically as a function of predefined varying parameters. A variable parameter may be the address of a memory cell being addressed; in this case the output of the code generator is a function of data read from the cell array, the previously calculated signature code and the address of the read data. The data are read in sequence, using an internal clock generated by an internal clock oscillator. In test mode, the memory is scanned sequentially, beginning from any memory location, selected randomly, and the signature code varies in dynamic way; at the end of memory scanning, the signature code is compared to an expected result.

Abstract: A method for manufacturing electronic devices, such as memory cells and LV transistors, with salicided junctions, that includes: depositing an upper layer of polycrystalline silicon; defining the upper layer, obtaining floating gate regions on first areas, LV gate regions on second areas of a substrate, and undefined regions on the first and third areas of the substrate; forming first cell source regions laterally to the floating gate regions; forming LV source and drain regions laterally to the LV gate regions; forming a silicide layer on the LV source and drain regions, on the LV gate regions, and on the undefined portions; defining HV gate regions on the third areas, and selection gate regions on the first areas; forming source regions laterally to the selection gate regions, and source and drain regions laterally to the HV gate regions.

Abstract: A checking device to control the power-on or power-off operations in an integrated circuit comprises a voltage reference circuit biased by a bias circuit, and an output stage. The device further comprises a control circuit to activate or deactivate the bias circuit as a function of the prevailing mode of operation of the integrated circuit, and a capacitor. A dynamic detection circuit is also associated with a transistor for discharging the capacitor.

Abstract: A method for erasing non volatile memories, in particular flash cells, that includes applying erasing pulses to the cells to be erased and to verify, after each pulse, the value of the threshold voltage of the cells. The erasing pulses are provided to the cells as long as the respective values of the threshold voltage are greater than the new values of threshold voltage corresponding to new data to be rewritten in the cells to be erased.

Abstract: The invention relates to a control circuit for a bias source including a stand-by device and a starting-aid device, with their respective outputs connected to a control input of the bias source, the starting-aid device including a switch to inhibit its operation, controlled by the bias source, said circuit including capacitive means for reactivating the starting-aid device when the “Stand-by” control signal changes state, indicating that the bias source should be reactivated.

Abstract: A process for forming a low resistivity titanium silicide layer on the surface of a silicon semiconductor substrate. In the process, an effective amount of a metallic element such as indium, gallium, tin, or lead is implanted or deposited on the surface of the silicon substrate. A titanium layer is deposited on the surface of the silicon substrate, and a rapid thermal annealing of the titanium-coated silicon substrate is performed to form low resistivity titanium silicide. In preferred processes, the metallic element is indium or gallium, and more preferably the metallic element is indium. A semiconductor device that has a titanium silicide layer on the surface of a silicon substrate is also provided.

Abstract: A reference voltage trim circuit includes a voltage follower receiving the reference voltage to be trimmed, with one or more resistive loads providing predefined voltage shifts serially connected between the output of the voltage follower and the output of the trim circuit. The voltage follower includes a current mirror differential amplifier receiving the reference voltage at one input and the output of the voltage follower at the other input, and a transistor with a resistive load connected between the power supply voltages and receiving the output of the current mirror differential amplifier at the transistor's gate. The resistive loads provide varying preselected voltage drop and are each shunted by corresponding fuses, with the entire series of resistive loads shunted by a master fuse. To trim the reference voltage, at least the master fuse is blown, together with the fuse(s) shunting resistive loads which combine to result in the desired trim voltage.

Abstract: A semiconductor electronic device comprises a chip of a semiconductor material, a set of metal conductors adjacent to the plate, a set of wire leads joining selected points on the chip to the metal conductors, and a supporting metal plate formed of three portions having a total surface area which is substantially less than the surface area of the chip, and forming a H-shaped supporting structure. All this, except the ends of the metal conductors, is encapsulated within a plastic material body.

Abstract: A ROM including columns of memory cells connected by columns to respective bit lines; a reference bit line; charge transistors controllable by a common charge line and respectively connecting the bit lines and the reference bit line to a high supply potential. The reference bit line is associated with a column of unprogrammed cells, and the memory includes means for activating the charge line before activation of a word line, the duration between the activation of the charge line and the activation of the word line, and the features of the charge transistors, being chosen so that the level variation of the bit lines is low as compared to the level of the high supply potential.

Abstract: An amplifier stage having a first and a second transistor connected in series to each other between a first and a second reference potential line. The first transistor has a control terminal connected to an input of the amplifier stage through a first inductor, a first terminal connected to the second reference potential line through a second inductor, and a third terminal connected to a first terminal of the second transistor. The second transistor has a second terminal forming an output of the amplifier stage, and connected to the first reference potential line through a load resistor. To improve the noise figure, a matching capacitor is connected between the control terminal and the first terminal of the first transistor.

Abstract: There is disclosed a single chip integrated circuit device comprising an instruction trace controller operable to monitor an address in memory of instructions to be executed by an on-chip CPU. The instruction trace controller is connected to trace storage locations for causing selected ones of said addresses to be stored at said trace locations, dependent upon detection that one of said addresses is not the next sequential address in memory after the previous one of the addresses. There is also disclosed a method of providing an instruction trace from an on-chip CPU within a single chip integrated circuit device in which addresses in memory of instructions to be executed by the CPU are held sequentially in an instruction pointer register.