Abstract: The invention provides a deposition system and methods of depositing materials onto substrates. In one aspect, a modular processing chamber is provided which includes a chamber body defining a processing region. The chamber body includes a removable gas feedthrough, an electrical feedthrough, a gas distribution assembly mounted on a chamber lid and a microwave applicator for generating reactive gases remote from the processing region.

Abstract: Metallization process sequences are provided for forming reliable interconnects including lines, vias and contacts. An initial barrier layer, such as Ta or TaN, is first formed on a patterned substrate followed by seed layer formed using high density plasma PVD techniques. The structure is then filled using either 1) electroplating, 2) PVD reflow, 3) CVD followed by PVD reflow, or 4) CVD.

Abstract: A multi-speed slit valve apparatus and method of actuating a slit valve apparatus at least at two distinct speeds is provided. The slit valve apparatus includes a pneumatic cylinder 210 having a primary channel 254, 266 and auxiliary channel 258, 270 at each end, wherein the auxiliary channels 258, 270 have a cross sectional area smaller than that of the primary channels 254, 266. A piston 226 defining a front volume 240 and a back volume 242 is disposed in the cylinder 210 and is reciprocally actuated by a compressed fluid such as air. At a predetermined stage during the cylinder's out-stroke and in-stroke the primary channels 254, 266 become sealed from the front and back volumes 240, 242, respectively, such that during the remainder of the stroke the fluid is biased to exhaust through the auxiliary channels 258, 270.

Abstract: A method and apparatus for depositing nano-porous low dielectric constant films by reaction of a silicon hydride containing compound or mixture optionally having thermally labile organic groups with a peroxide compound on the surface of a substrate. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a foam structure. The nano-porous silicon oxide based films are useful for filling gaps between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of 1,3,5-trisilanacyclohexane, bis(formyloxysilano)methane, or bis(glyoxylylsilano)methane and hydrogen peroxide followed by a cure/anneal that includes a gradual increase in temperature.

Abstract: The present invention provides a method and apparatus for detecting the end point of a process by monitoring the position of a valve during the process. In one aspect, a cleaning process is performed in the chamber, and a controller monitors the valve position to determine the end point of the process which corresponds to a decrease in the number of steps in the valve position required to achieve a stable throttle valve position after the cleaning process is complete.

Abstract: A gas feedthrough in a semiconductor processing apparatus comprises a static-dissipative composite material. This material is characterized by good resistance to electromigration and is preferably made of a homogeneous material. This apparatus for preventing the transfer of energy to a gas flown through a gas line and comprises a gas feedthrough comprising a static-dissipative material, the feedthrough having a first end for abuttingly contacting an electrically energized member and a second end for contacting a grounded member, the feedthrough defining a void therein along its length to house a gas line.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1.

Abstract: A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

Abstract: The invention generally provides an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free interconnections in high aspect ratio, sub-half micron applications. The invention provides a multi-step PVD process in which the plasma power is varied for each of the steps to obtain favorable fill characteristics as well as good reflectivity, morphology and throughput. The initial plasma powers are relatively low to ensure good, void-free filling of the aperture and, then, the plasma powers are increased to obtain the desired reflectivity and morphology characteristics. The invention provides an aperture filling process comprising physical vapor depositing a metal over the substrate and varying the plasma power during the physical vapor deposition. Preferably, the plasma power is varied from a first discrete low plasma power to a second discrete high plasma power.

Abstract: The present invention provides a method and apparatus for determining whether a substrate is in a clamped or unclamped state on a robot blade and preferably allows the position of a properly clamped substrate to be compensated for misalignments due to substrates not at or very near to their nominal positions on the blade. A sensor unit comprising a radiation source and a detector and capable of transmitting and receiving a signal is mounted outside a transfer chamber and is positioned to direct the signal therein. A robot blade having a reflecting member is actuated through the transfer chamber and into the path of the signal. The reflecting member is preferably positioned on a clamp finger and causes the signal to be reflected to the detector of the sensor unit when the signal is incident on the reflecting member. As the reflecting member moves through the signal the output of the sensor unit switches states, thereby generating values corresponding to the position of the reflecting member.

Abstract: In an interactive information distribution system that utilizes open sessions to provide requested information to users, a method for sharing the use of open sessions between a plurality of set top terminals associated with a common account number or user.

Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.

Abstract: A cover for a rain gutter that prevents the gutter from becoming clogged with leaves or other debris while facilitating water entry to the gutter is disclosed. Specifically, the cover comprises a flange which may be disposed beneath the shingles of a roof, an substantially vertical apertured front portion containing aperture which divert the rain water into the gutter, a trough for collecting the water which fails to enter the apertures, and a second flange for connection to the gutter.

Abstract: A method and apparatus for managing the personal identification numbers of customers as well as customer authorization access to an interactive information distribution system. The apparatus comprises an interactive session manager containing a central processing unit that is programmed to implement the method includes. The method of the present invention is a personal identification number (PIN) assignment routine for assigning various types of PINs to various customers of the information distribution system. The method also includes an access authorization routine for restricting access to only those customers with authorized access to particular services.

Abstract: An apparatus and method for ex-situ measurement of electrostatic chuck performance parameters and correlating ex-situ measurements to in-situ chuck performance. The apparatus comprises a probe, a fixture, a data acquisition system and a controller. The fixture secures a probe head in a substantially fixed position relative to the chuck. The apparatus coordinates measurements of the chuck surface potential as a function of time with the voltage applied to the chuck electrodes. The method comprises fixing the chuck and probe head to the fixture, measuring an ex-situ performance parameter of the chuck, such as surface potential, and comparing the measured parameter to a predetermined in-situ performance profile. The ex-situ performance parameter measurement can be measured as a function of time and/or coordinated with a change in the voltage applied to the chuck electrodes.

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract: A conduit interlock assembly for being clamped to portions of a pair of conduits which portions are adjacent an end-to-end interconnection between the two conduits and which conduit interlock assembly is for surrounding a conduit fastener or fasteners fastening the conduits together in the end-to-end connection. The conduit interlock assembly includes a normally open switch for being closed upon the conduit interlock assembly being clamped to the conduits to provide an indication that the conduits are in the end-to-end interconnection and which switch is opened upon the conduit interlock assembly being unclamped from the conduits to provide an indication that the conduits possibly are not in the end-to-end interconnection.

Abstract: A semiconductor fabrication equipment component which is exposed to a film layer fabrication environment exhibits a surface which is embossed with a pattern to provide an enhanced surface area for particle retention. The component is fabricatable using numerous embossing techniques, including knurling. The embossed surface provides the enhanced surface area without imposing a particle load on the treated part.

Abstract: An substrate support pedestal having an RF contact assembly that utilizes a canted spring to make electrical connection to the cathode. The canted spring has coils that are tilted in one direction and joined end to end to form a doughnut shape. Such a spring creates multiple parallel self-loading electrical connections via the turns of the spring. The turns act like electrical wires to ensure reliable RF electrical energy transfer. The canted spring contact of the present invention allows for flat contact between the pedestal and the chuck.