Abstract: An apparatus and concomitant method of reducing the number of synchronization pulses transmitted to the alarm units for increasing the reliability of the overall alarm system is disclosed. The synchronization signal is implemented as a reference or reset signal from which the alarm units derive a reference time to begin activation of the alarm units. Thus, when an alarm unit receives a reference synchronization pulse, the alarm unit applies the reference synchronization pulse as a reference point in time to trigger a series of flashes or audio tones.

Abstract: The present invention provides a method and apparatus for cleaning deposits in a chemical vapor deposition (“CVD”) chamber equipped for generating a plasma A gas supplying line is connected to the CVD chamber to deliver a cleaning gas that reacts with the deposits formed therein. When all of the deposits have been reacted and the chamber is clean, the pressure in the chamber will change, either increasing or decreasing. A pressure detector located beyond an adjustable valve in the exhaust line allows the reaction end point to be determined, while allowing the adjustable valve to maintain a constant pressure in the chamber itself.

Abstract: A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH4 into the chamber. Preferably, WSix is deposited on a semiconductor wafer using a mixture comprising WF6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF6 and dichlorosilane by flowing SiH4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress.

Abstract: A load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The load lock chamber is configurable in several configurations, including a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures. Various features of the chamber configurations help increase the throughput of the system by enabling rapid heating and cooling of substrates and simultaneous evacuation and venting of the chamber, and help compensate for thermal losses near the substrate edges, thereby providing a more uniform temperature across the substrate.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract: Two sliding sleeves are carried in a tubular pipe assembly for controlling the opening and closing of flow passages extending through the pipe wall. The pipe assembly is placed at the lower end of a tubing string disposed in a well to regulate the flow of fluid from the string into a subsurface well formation. The first sleeve extends between upper and lower seals disposed above and below the flow passage to close the flow passages to flow. A shifting tool operated from the well surface moves the sleeve axially down through the pipe assembly to open the flow passages, leaving the upper seal exposed. The shifting tool then moves the second sleeve axially down through the pipe to cover the exposed seal. Fluid pumped through the pipe exits freely through the flow passages without first having to flow through radial flow passages in the sliding sleeve to prevent erosion of the flow passages and the sleeve structure.

Abstract: The present invention provides an apparatus and method for measuring the temperature of a moving radiant object. A probe, such as a pyrometer, is disposed in an opening of a vacuum chamber adjacent a radiation transparent window. The probe defines an optical path which intercepts the radiant object entering or exiting a processing chamber. The radiant object is moved through the optical path and emits electromagnetic waves. The electromagnetic waves are collected by the probe and transmitted to a signal processing unit where the waves are detected and converted to a temperature reading. If desired, the accumulated data may then be used to generate a cooling curve representing the thermal effects experienced by the radiant object. Extrapolation or correlation methods may be used to extend the cooling curve to points in time prior to or after the data collected by the probe.

Abstract: A substrate support plate including a heating element for use in a process chamber is described. The heating element includes an outer sheath, a heating filament and a thermally-conductive and electrically insulative sealing material. The sealing material comprises a diamond powder.

Abstract: A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.

Abstract: An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate.

Abstract: Novel herbal extracts provide potent efficacy in the treatment of acne and furuncle. The formulated extracts of Momordica charantia L. are from either the whole plant or parts of the plant. The extracts have been formulated into aqueous solution, pads, and/or lotion. These formulations have been provided to treat acne and furuncle 2 to 3 times a day. It has demonstrated the ability to manage various grades of acne, from mild, moderate to severe, which include comedos, papules, pustules and nodules. Significant improvement is visible within five days. There are no observed either long-term or short-term side reactions.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract: An apparatus for a wafer processing system comprising a wafer support chuck attached to a gas delivery system for delivery of a gas to the backside of a wafer supported by the chuck. The gas delivery system has a gas shutoff valve directly connected to the wafer chuck. The shutoff valve provides a positive shutoff with negligible leak rate. By placing the valve in close proximity to the wafer chuck, the volume of the backside gas trapped between the valve and the wafer is minimized. Release of this trapped gas into the process chamber during wafer transfer has no adverse impact on the performance of the processing system.

Abstract: A plasma enhance chemical processing reactor and method. The reactor includes a plasma chamber and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wager support and a gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.

Abstract: A method and apparatus for control of precursor and purge additive materials in a deposition system comprising a precursor material delivery system and a plurality of purge additive transfer lines connected between or at components in the precursor material delivery system. One of the plurality of purge additive transfer lines is connected between an ampoule and a liquid mass flow controller, another is connected between the liquid mass flow controller and a vaporizer and a third is connected to the vaporizer. The apparatus further comprises a process chamber connected to the precursor material delivery system and having a susceptor wherein one of the plurality of purge additive transfer lines is connected to the susceptor. With the apparatus and accompanying method, formation of particulate contaminants is greatly reduced.

Abstract: A heat exchanger apparatus including a heat exchange element and a substrate support. A clamp member is coupled to the heat exchange element and the substrate support by expanding the clamp member to an expanded state sufficient to surround a portion of the substrate support and the heat exchange element, and contracting the clamp member to couple the clamp member to the substrate support.

Abstract: The present invention provides an apparatus and method for sequential deposition of regular series of layers on consecutive substrates in a modular assembly-line like system. The apparatus and method are especially used processing large glass or metal substrates such as are employed in solar panels. The apparatus includes a load lock chamber and a processing chamber coupled to the load lock chamber. Both the load lock chamber and the processing chamber include a platen to support the substrate. Each platen includes slots therein. A substrate transfer shuttle is provided which is moveable along a shuttle path between one position in the load lock chamber and another position in the processing chamber for transferring the substrate between the load lock chamber and the processing chamber. The shuttle may be moved below the level of the platen and may be maintained in the processing chamber during processing.

Abstract: An apparatus and method for controlling a flow of process material to a deposition chamber. The apparatus comprises an injector valve, disposed between the process material source and the deposition chamber. The injector valve controls the flow of precursor material by repeatedly opening and closing the injector valve with a predetermined duty cycle. The apparatus further comprises an evaporator coupled to the injector valve for evaporating the precursor.