Abstract: Disclosed is a nonvolatile memory device and programming method of a nonvolatile memory device. The programming method of the nonvolatile memory device includes conducting a first programming operation for a memory cell, retrieving original data from the memory cell after the first programming operation, and conducting a second programming operation with reference to the original data and a second verifying voltage higher than a first verifying voltage of the first programming operation.

Abstract: Provided is a method of reading configuration data in a flash memory device, including a memory cell array which stores configuration data about an operating environment of the flash memory device. The method includes setting a read time of the configuration data to differ from a read time of normal data, and reading the configuration data.

Abstract: A data transceiver that determines according to signal strength of a received radio wave whether a receiving operation should be continued. A measurement unit counts demodulation clocks of a demodulator and supplies a measurement result indicating instability of reception data until the count reaches a predetermined target count value, and supplies a measurement result indicating stability of the reception data after the count value is reached. A determinator receives the result of measurement indicative of instability, and outputs a determination result indicative of stopping a receiving operation regardless of signal strength. When the determinator receives the result of measurement indicative of stability, the determinator outputs a determination result corresponding to the signal strength of the reception data. Thus, receiving operation is advanced after reception data is sufficiently stable.

Abstract: A semiconductor chip package manufacturing method and a structure thereof are provided. The manufacturing method includes: providing a base having an image sensor chip and an encapsulant, in which the image sensor chip has pads and an active area; placing a transparent insulator on the active area; forming an insulation layer on an upper surface of the base; opening a plurality of openings to expose the pads; forming a plurality of through holes penetrating the insulation layer and the encapsulant outside of the image sensor chips; forming a metal layer on surfaces of the insulation layer, the openings, the pads and the through holes, and on a lower surface of the base, so as to extend the pads to the lower surface of the base; patterning the metal layer to expose a top area of the transparent insulator and remove a partial area of the metal layer on the lower surface of the base to form contacts; and sawing the base to form a package structure containing a single image sensor chip.

Abstract: A semiconductor device includes a transistor region, a first guard ring, a second guard ring, and a silicide region. A first-conductive-type transistor is formed in the transistor region. The first guard ring is a second-conductive-type first impurity diffusion layer surrounding the transistor region with a first width, and is coupled to a first reference potential. The second guard ring is a first-conductive-type transistor second impurity diffusion layer surrounding the first guard ring with a second width. The silicide region is formed on the surface of the second guard ring such that substantially no silicide is formed on a portion of the surface of the second guard ring on the side facing a drain region of the first-conductive-type transistor, and is connected to a second reference potential line whose potential is higher than that of the first reference potential line.

Abstract: A method of manufacturing a semiconductor device includes preparing a semiconductor wafer, forming a semiconductor function element on the semiconductor wafer, drying the semiconductor wafer after forming the semiconductor function element by using an isopropyl alcohol vapor, heating the semiconductor wafer after drying the semiconductor wafer, and performing a cleaning on the semiconductor wafer after heating the semiconductor wafer by using a fuming nitric acid.

Abstract: A method for fabricating a semiconductor device includes: providing a semiconductor substrate; forming a STI region on the semiconductor substrate; forming a channel region on the semiconductor substrate; implanting impurities into the STI region; and performing a thermal treatment to diffuse impurities to a side of the channel region.

Abstract: An apparatus and a method form a thin layer on each of multiple semiconductor substrates. A processing chamber of the apparatus includes a boat in which the semiconductor substrates are arranged in a vertical direction. A vaporizer vaporizes a liquid metal precursor into a metal precursor gas. A buffer receives a source gas from the vaporizer and increases a pressure of the source gas to higher than atmospheric pressure, the source gas including the metal precursor gas. A first supply pipe connects the buffer and the processing chamber, the first supply pipe including a first valve for controlling a mass flow rate of the source gas. A second supply pipe connects the vaporizer and a pump for creating a vacuum inside the processing chamber, the second supply pipe including a second valve for exhausting a dummy gas during an idling operation of the vaporizer.

Abstract: A hard disk drive (HDD) includes a spindle motor, an actuator, a static eccentricity sensor, a monitor and a central controller. The spindle motor includes a rotary body and a static body adapted to support the rotary body, where the spindle motor is adapted to rotate a disk. The actuator is adapted to move a read/write head over the disk. The static eccentricity sensor is adapted to measure static eccentricity associated with the rotary body. The monitor is adapted to monitor the measured static eccentricity and generate a free-fall signal when the monitor determines that the HDD is in a free-fall state. The central controller is adapted to initiate an unloading/parking operation for the read/write head in response to the free-fall signal.

Abstract: A manufacturing method of a semiconductor device includes forming a cobalt film on a silicon substrate on which a diffusion layer is formed, forming a titanium film on the cobalt film using a titanium target that has a surface from which a nitride film has previously been removed, forming a titanium nitride film on the titanium film in accordance with a reactive sputtering process using a gas containing a nitrogen atom and the titanium target, and performing a heat treatment to react the cobalt film with the silicon substrate, thereby accomplishing silicification.

Abstract: An SOI semiconductor device has a substrate, an insulation film, a silicon film, a gate insulation film, a gate electrode, a pair of first diffusion regions, a first region, and a second diffusion region. The insulation film is formed on the substrate. The silicon film is formed on the insulation film. The gate insulation film is formed on the silicon film. The gate electrode is formed on the gate insulation film. The pair of first diffusion regions is formed in the silicon film while sandwiches the under part of the gate electrode in between. The first region is sandwiched by a pair of the first diffusion regions. The second diffusion region contacts with the first region while adjoins one of the first regions and has the same conductivity type with the first region.

Abstract: An integrated antenna for worldwide interoperability for microwave access (WiMax) and wireless local area network (WLAN), includes a substrate, a grounding metal strip, and first and second radiating metal strips. The first radiating metal strip is disposed on the substrate and is not connected to the grounding metal strip. The first radiating metal strip has a first portion and a second portion on two ends thereof. The first and second portions are used to induce first and second resonance modes, respectively. The second radiating metal strip is disposed on the substrate and is connected to the grounding metal strip. The second radiating metal strip is not connected to the first radiating metal strip. The energy is coupled from the second radiating metal strip to the first radiating metal strip to induce a third resonance mode. The antenna is adapted to the frequencies of WiMax and WLAN.

Abstract: A semiconductor integrated circuit has a bipolar transistor whose collector is connected to a substrate of an NMOS transistor serving as a protecting transistor. When an ESD event occurs, the bipolar transistor causes the NMOS transistor to be changed into bipolar operation at a low voltage, by supplying current to the substrate of the NMOS transistor. In accordance with this structure, good levels of ESD protecting performance and off leak current of the protecting transistor can both be achieved in the semiconductor integrated circuit.

Abstract: A semiconductor device includes a first insulating layer having a through hole; a first interconnection having a first conductive layer, a first barrier layer, and a first main interconnection; and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, a problem wherein copper in the first main interconnection transfers from a connection portion thereof to the second interconnection due to electromigration, so that a void is formed at the connected portion resulting in the first interconnection being disconnected from the second interconnection, can be prevented.

Abstract: A method includes; a step of setting square mask cells in rows and columns on a transparent mask-substrate surface by demarcating by orthogonal lines of equal intervals, each of which has one side having a length smaller than a resolution limit of an optical system; a step of setting the resist thicknesses corresponding to the mask cells; a step of assigning normalized light-intensities respectively to the mask cells as transmission intensities, corresponding to the film thicknesses and having three or more different values; a step of setting each of the mask cells a light-transmission area and a shade-area and determining a transmission-light intensity by an transmission area ratio; a step of providing shade films on the shade areas of the mask substrate.

Abstract: A disposable cartridge for characterizing particles suspended in a liquid, especially a self-contained disposable cartridge for single-use analysis, such as for single-use analysis of a small quantity of whole blood. The self-contained disposable cartridge facilitates a straightforward testing procedure, which can be performed by most people without any particular education. Furthermore, the apparatus used to perform the test on the cartridge is simple, maintenance free, and portable.

Abstract: A flash memory device and a method of programming a flash memory device include selecting bit lines connected to program cells of multiple memory cells coupled to a selected word line. The selected bit lines are driven to a bit line program voltage through a write driver circuit connected to first ends of the selected bit lines. The selected bit lines are also driven to the bit line program voltage through a bit line detecting/driving circuit connected to second ends of the selected bit lines. The bit line detecting/driving circuit activates the selected bit lines synchronously with voltage variations of the selected bit lines.

Abstract: A flash memory device includes multiple memory blocks, a decoder configured to select at least one of the memory blocks in response to block select signals, and a controller configured to generate the block select signals in response to a block address. When the block address corresponds to a bad block, the controller generates the block select signals to cause the decoder to interrupt selection of a memory block corresponding to the block address.

Abstract: A method for manufacturing a semiconductor device includes forming protruded electrodes on a plurality of chip areas of a semiconductor wafer having the chip areas and boundary regions both being provided in a surface of the semiconductor wafer; forming a surface-side protective member so as to cover the surface of the semiconductor wafer and the protruded electrodes removing the semiconductor wafer corresponding to the boundary regions and forming trenches which expose the surface-side protective member; forming a back-side protective member with which the trenches are filled and which covers the back of the semiconductor wafer; and dividing the semiconductor wafer in the boundary regions with widths thinner than those of the trenches in such a manner that the surface-side protective member and the back-side protective member charged into the trenches are left in cut sections.

Abstract: A method of reading data in a non-volatile memory device includes applying a bit line read voltage to a bit line and a selected cell read voltage to a word line, both of which are electrically connected to a selected cell located in a selected string. A first read voltage is applied to word lines electrically connected to first non-selected cells separated from the selected cell in the selected string, and a second read voltage is applied to word lines electrically connected to second non-selected cells adjacent to the selected cell in the selected string. The second read voltage is lower than the first read voltage. A pass voltage is applied to turn on a string select transistor and a ground select transistor, respectively, in the selected string. An electrical signal output from the selected string is compared with a standard signal to read data stored in the selected cell.