Abstract: Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to the first subunits relative to the second subunits to form a pattern of metal-containing regions and non-metal-containing regions. At least some of the block copolymer may be removed to form a patterned mask corresponding to the metal-containing regions. A pattern defined by the patterned mask may be transferred into the substrate with one or more etches. In some embodiments, the patterning may be utilized to form integrated circuitry, such as, for example, gatelines.

Abstract: Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.

Abstract: A method of forming a pattern on a substrate includes forming spaced first features over a substrate. The spaced first features have opposing lateral sidewalls. Material is formed onto the opposing lateral sidewalls of the spaced first features. That portion of such material which is received against each of the opposing lateral sidewalls is of different composition from composition of each of the opposing lateral sidewalls. At least one of such portion of the material and the spaced first features is densified to move the at least one laterally away from the other of the at least one to form a void space between each of the opposing lateral sidewalls and such portion of the material.

Abstract: Some embodiments include methods of forming patterns utilizing copolymer. A copolymer composition is formed across a substrate. The composition includes subunits A and B, and will be self-assembled to form core structures spaced center-to-center by a distance of L0. The core structures are contained within a repeating pattern of polygonal unit cells. Distances from the core structures to various locations of the unit cells are calculated to determine desired distributions of subunit lengths.

Abstract: Some embodiments include methods of making stud-type capacitors utilizing carbon-containing support material. Openings may be formed through the carbon-containing support material to electrical nodes, and subsequently conductive material may be grown within the openings. The carbon-containing support material may then be removed, and the conductive material utilized as stud-type storage nodes of stud-type capacitors. The stud-type capacitors may be incorporated into DRAM, and the DRAM may be utilized in electronic systems.

Abstract: A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.

Abstract: An intravascular port access device includes a first component having a chamber configured to attach reversibly to an intravenous line port. A second component reversibly attaches to the first component and contains a disinfecting agent and an applicator material. The second component is configured to be reversibly received over external surfaces of the intravenous line port. A method of cleansing an intravenous line port includes providing a port cleaning device having a first component with a chamber containing a first cleaning agent. A second component includes a second cleaning agent. A third component has a microbiocidal agent and is reversibly attached to the first component. The second component is removed from the device, the external surfaces of the port are contacted with the second cleaning agent, the first cleaning agent is ejected from the chamber into the port, and the third component is used to cap the port.

Abstract: A clip-separating machine is provided with a guide frame, a clipper, and a displacement structure. The guide frame is configured to support a strip of clips. The clipper has a pair of opposed cutting edges. One of the edges is supported for movement toward and away from another of the edges. The displacement structure is configured to move the one cutting edge toward the other cutting edge so as to cause co-action of the cutting edges to sever a terminal clip from a strip of clips. A method is also provided.

Abstract: Electrical energy consumption control apparatuses and electrical energy consumption control methods are described. According to one aspect, an electrical energy consumption control apparatus includes processing circuitry configured to receive a signal which is indicative of current of electrical energy which is consumed by a plurality of loads at a site, to compare the signal which is indicative of current of electrical energy which is consumed by the plurality of loads at the site with a desired substantially sinusoidal waveform of current of electrical energy which is received at the site from an electrical power system, and to use the comparison to control an amount of the electrical energy which is consumed by at least one of the loads of the site.

Abstract: Methods are provided for simultaneously processing transistors in two different regions of an integrated circuit. Planar transistors are provided in a logic region while recessed access devices (RADs) are provided in an array region for a memory device. During gate stack patterning in the periphery, word lines are recessed within the trenches for the array RADs. Side wall spacer formation in the periphery simultaneously provides an insulating cap layer burying the word lines within the trenches of the array.

Abstract: Some embodiments include NAND memory constructions. The constructions may contain semiconductor material pillars extending upwardly between dielectric regions, with individual pillars having a pair of opposing vertically-extending sides along a cross-section. First conductivity type regions may be along first sides of the pillars, and second conductivity type regions may be along second sides of the individual pillars; with the second conductivity type regions contacting interconnect lines. Vertical NAND strings may be over the pillars, and select devices may selectively couple the NAND strings with the interconnect lines. The select devices may have vertical channels directly against the semiconductor material pillars and directly against upper regions of the first and second conductivity type regions. Some embodiments include methods of forming NAND memory constructions.

Abstract: An ocular motor controller for preventing an image blur by using the principle of vestibulo-ocular reflex in response to translational movement. The ocular motor controller comprises an image pickup section (20) used as an ocular device, an ocular drive section (30) for rotating the image pickup section, a distance information acquisition section (40) for acquiring information concerning the distance from the image pickup section (20) to a visual target (1), a translational movement sensor (50) for measuring the variation due to the translational movement of a moving object, and a correction section (60) for utilizing the rotational movement driven by the ocular drive section.

Abstract: A method of etching trenches into silicon of a semiconductor substrate includes forming a mask over silicon of a semiconductor substrate, with the mask comprising trenches formed there-through. Plasma etching is conducted to form trenches into the silicon of the semiconductor substrate using the mask. In one embodiment, the plasma etching includes forming an etching plasma using precursor gases which include SF6, an oxygen-containing compound, and a nitrogen-containing compound. In one embodiment, the plasma etching includes an etching plasma which includes a sulfur-containing component, an oxygen-containing component, and NFx.

Abstract: A device for participating in a distributed peer-to-peer communications network has a distributed network application that includes a capability-routing entity having capability information for a group of associated peers participating in the network. A method for establishing peer-to-peer communication in the network including determining which of the group of associated peers can fulfil the requested connection based in the capability information and referring the request to the peer that can fulfil the connection.

Abstract: A method of fabricating a substrate includes forming spaced first features and spaced second features over a substrate. The first and second features alternate with one another and are spaced relative one another. Width of the spaced second features is laterally trimmed to a greater degree than any lateral trimming of width of the spaced first features while laterally trimming width of the spaced second features. After laterally trimming of the second features, spacers are formed on sidewalls of the spaced first features and on sidewalls of the spaced second features. The spacers are of some different composition from that of the spaced first features and from that of the spaced second features. After forming the spacers, the spaced first features and the spaced second features are removed from the substrate. The substrate is processed through a mask pattern comprising the spacers. Other embodiments are disclosed.

Abstract: Some embodiments include a memory cell that contains programmable material sandwiched between first and second electrodes. The memory cell can further include a heating element which is directly against one of the electrodes and directly against the programmable material. The heating element can have a thickness in a range of from about 2 nanometers to about 30 nanometers, and can be more electrically resistive than the electrodes. Some embodiments include methods of forming memory cells that include heating elements directly between electrodes and programmable materials.

Abstract: Some embodiments include methods of removing noble metal-containing particles from over a substrate. The substrate is exposed to a composition that reduces adhesion between the noble metal-containing particles and the substrate, and simultaneously the substrate is spun to sweep at least some of the noble metal-containing particles off from the substrate. Some embodiments include methods in which tunnel dielectric material is formed across a semiconductor wafer. Metallic nanoparticles are formed across the tunnel dielectric material. A stack of two or more different materials is formed over the metallic nanoparticles. A portion of the stack is covered with a protective mask while another portion of the stack is left unprotected. The unprotected portion of the stack is removed to expose some of the metallic nanoparticles. The semiconductor wafer to is subjected to etchant suitable to undercut at least some of the exposed metallic nanoparticles, and simultaneously the semiconductor wafer is spun.

Abstract: A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode.

Abstract: An electronic component package having an EMI shielded space is disclosed. The package comprises a substrate having an electronic component located on its surface and a conductive enclosure having a top and downwardly extending sides enclosing the component and defining a shielded space. A vent opening is provided through the substrate and is located in the shielded space for venting the shielded space. A second vent opening may be provided in the top of the conductive enclosure.

Abstract: Power generation systems are provided that include a circular loop of conduit, a dehumidifier coupled to the conduit, a power turbine coupled to the turbine and a pump coupled to the conduit. Processes for generating energy at an industrial mine site are also provided. Water heating systems are provided that can include a dehumidifier associated with a conduit containing water, a holding tank coupled to the conduit and water heaters coupled to the holding tank. Processes of heating water are also provided.