Abstract: A method of fabricating a semiconductor package capable of realizing a smaller and more compact size and improving reliability of package product and a fabrication method thereof. A main semiconductor chip operates as a lead frame or a substrate and having a plurality of main chip pads on the outer peripheral part thereof; one or more sub semiconductor chips adhered to a predetermined part of the main semiconductor chip and having a plurality of sub chip pads on the outer peripheral part thereof; an insulating layer formed on the main semiconductor chip in a shape surrounding the sub semiconductor chip to expose the main chip pads and the sub chip pads; a plurality of metal patterns electrically connecting the exposed main chip pad to the sub chip pad or one sub chip pad to another sub chip pad; and a plurality of solder lands formed on a predetermined part of the plurality of metal patterns.

Abstract: A transistor fabrication method comprises: sequentially forming a pad oxide film and a silicon nitride film on a semiconductor substrate; etching the substrate to form a trench; sequentially forming a first oxide film within the trench and a cylindrical insulation spacer at a lateral portion of the first oxide film; forming an insulation pattern; etching the silicon nitride film, the insulation pattern and the insulation spacer; removing the pad oxide film; removing the insulation spacer and the first oxide film; sequentially forming source/drain regions and LDD regions at both sides of the trench, under the remaining insulation pattern; forming a second oxide film; sequentially forming a channel stop layer between the LDD regions and a punch stop layer under the channel stop layer; and sequentially forming a gate insulation film and a gate region within the trench and the second oxide layer.

Abstract: The present invention discloses a dynamic random access memory and the method for fabricating thereof. A first silicon substrate having a trench capacitor and a second silicon substrate having a transistor are formed with a double layer, which is interposed an insulation layer between therewith, thereby forming a trench capacitor at a region, which is used to be formed a transistor in the conventional art. Accordingly, when forming the trench capacitors, in which the numbers are the same as the conventional art, at the same silicon substrate area, a trench capacitor with large in diameter and shallow in depth can be formed, thereby performing a trench capacitor forming process. According to the present invention, after forming a trench, successive processes become easy and reliability of device can be enhanced.

Abstract: A multi-component stab and ballistic resistant garment having a stab resistant sub-panel constructed of at least one layer of metallic cloth interposed between at least two layers of woven fabric. A ballistic resistant sub-panel constructed of woven ballistic resistant sheets is provided in which at least a portion of the stab resistant sub-panel and at least a portion of the ballistic resistant sub-panel are aligned with one another.

Abstract: This invention relates to a continuous process and an apparatus (1) for removing dissolved and undissolved solids and/or high boiling point liquid contaminants from a mixture of miscible liquids (9). A recycle liquor stream (6) is fed at high velocity through a heat exchanger having a single flow path (12) and the heat added by the heat exchanger is sufficient to vaporize the feed stream (2) when the recycle liquor and feed stream are mixed upon delivery to the separation vessel (3).

Abstract: The invention concerns an hydraulically powered mechanism of the kind having a piston assembly which is arranged to be driven by hydraulic fluid acting on it in a working zone and an item of equipment which is to be driven by the piston assembly. The piston assembly presents a face which acts at an interface against a complemental face on the item of equipment. A fluid passage is provided to supply hydraulic fluid from the working zone to the interface for lubrication purposes. In a specific application of the invention it may be used in the rotary indexing mechanism of an hydraulically powered, typically a water-powered, rockdrill.

Abstract: A process to prepare stoichiometric-nanostructured materials comprising generating a plasma, forming an “active volume” through introduction of an oxidizing gas into the plasma, before the plasma is expanded into a field-free zone, either (1) in a region in close proximity to a zone of charge carrier generation, or (2) in a region of current conduction between field generating elements, including the surface of the field generation elements, and transferring energy from the plasma to a precursor material to form in the “active volume” at least one stoichiometric-nanostructured material and a vapor that may be condensed to form a stoichiometric-nanostructured material. The surface chemistry of the resulting nanostructured materials is substantially enhanced to yield dispersion stable materials with large zeta-potentials.

Abstract: A solar energy concentrator (1) is formed in the shape of a spiral horn, so that solar energy incident over a wide range of incident angles on the mouth (2) of the horn is concentrated by multiple reflections from inner walls (5) of the horn to emerge from an exit aperture (3) at the center of the horn. Solar energy emerging from the collector may be distributed by light pipes (40) to illuminate a building or may be transmitted to a solar energy conversion chamber (50) having a small entry aperture (51). The entry aperture (51) acts as black body absorbing all solar energy incident upon it and the solar energy may be converted within the chamber (50) either by photovoltaic cells and/or by heat absorbing media.

Abstract: A method and apparatus to initialize a memory with random data, including a pseudo-random number generator to generate random data; a selection circuit to provide selected data in response to a fill signal during an initialization state. The present invention can be used to provide statistically unbiased random data for writing to the power calibration area (PCA) of an optical disc.

Abstract: An additive for elaboration of ecological permeable concretes. The additive containing from about 24.5% to 28.2% by weight of a mixture made of dispersing agents, from about 3.3% to 3.8% by weight of a humectant agent, from 0 to about 1% by weight of a non ionic surfactant, from 0 to about 3% by weight basis of a bactericidal agent, from about 3.3% to 3.8% by weight of hydroxypropylethyl or methylcellulose from 0 to about 0.3% by weight of an antifoaming agent and from about 55.8% to 64.2% by weight of a highly reactive non-crystalline calcinated silica aluminant.

Abstract: The method of forming a minute focusing lens with respect to over a photoactive area of an image sensor such as a CCD or CMOS, comprising: coating a resist film on a flattening layer formed over the photoactive area of the image sensor; exposing the resist film to light via a photo-mask, and developing the resist film; and patterning the resist film into a lens configuration provides in this invention in order to form a lens having a designed configuration that provides a good light focusing efficiency. The photo-mask is a light transmission type having no light-shading layer. And, this photo-mask is the one having provided thereon a light transmission portion comprising a light refraction material, having on its surface portion a stairs portion, the stairs portion having the phase of a transmission light at its respective position controlled relative to a prescribed width so that a desired light intensity distribution may be obtained at the surface of the photo-mask light-exposed portion.

Abstract: A resin composition for production of an optical element being adapted to form the optical element has a characteristics of which, when W1/2 (° C.) represents, regarding a crest portion in a loss factor/temperature curve obtained by measuring the loss factor of the resin composition relative to a change in the temperature, the width of the crest portion at the position of ½ of the maximum value of the loss factor in the crest portion temperature range; W0.1 (° C.) represents, regarding the crest portion, the width of the crest portion at the position of 0.1 of the maximum value of the loss factor; and &Dgr;W (° C.), the difference between the widths of the two crest portions, is set to be &Dgr;W=W0.1−W1/2, the &Dgr;W is in the range of from 16° C. to 31° C.

Abstract: A lens sheet of the present invention comprises: a lens layer having a plurality of unit lenses, each of which is adapted to fully reflect a part of an incident light beam on a fully reflecting portion so as to emit it from a light emitting portion, arranged in a one- or two-dimensional direction on a light emitting side; and reflection attenuating layers for reflecting the light beam incident from an incident light side and attenuating the light beam incident from the light emitting side, the reflection attenuating layers being formed of a material, which can form the layers via a vacuum film forming method, on the fully reflecting portion.

Abstract: Ground engaging boundary element (10) comprises opposing edge portions and earth engaging means (26) for anchoring element (10) in the earth. Earth engaging means (26) is formed at lower edge portion (18) of element (10). At least one of the opposing edge portions includes interlocking means (22) for joining to an adjacent ground engaging boundary element. Interlocking means (22) comprises complementary-shaped tongue or groove members and extends partially along each edge portion to adjacent lower edge portion (18). In use, earth engaging means (26) together with part of interlocking means (22) is embedded in the earth, and upper portion (24) of element (10) conceals interlocking means (22). The opposing edge portions of element (10) are also shaped to permit articulation of adjacent interlocked elements so as to provide for a non-linear elongated boundary structure.

Abstract: A method for fabricating a transistor comprises steps of forming a conductive well region, an isolation oxide layer, a first pad oxide layer, a conductive LDD (low doped drain) region and a source/drain region on a silicon substrate. A pad nitride layer is formed on the first oxide layer. A trench is fanned by etching the pad nitride layer, the first oxide layer, the source/drain region, and the LDD region. A second pad oxide layer is then formed on the source/drain region and LDD region. The LDD region and part of the well region are removed after removal of the second pad oxide layer. A gate is formed in the trench, and an interlayer insulating layer is formed on the resultant structure.

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.

Abstract: A shadow mask comprises a frame member, a mask body formed in a plate shape as a grid element and mounted to the frame member and a plurality of slits formed to the mask body. The mask body is composed of an iron-based alloy containing 31.0-38.0 weight % of nickel and 1.0-6.5 weight % of cobalt and the iron-based alloy contains 0.01-0.10 weight % of carbon.