Abstract: A safety device for a firearm having a handle and a barrel. The safety device includes a gun-attachment member and a chamber-disabling component secured to the gun-attachment. A weight may also be added to the device to allow it to be used in marksmanship training.

Abstract: Disclosed is a semiconductor package capable of realizing a small and compact size and improving the reliability and the fabrication method of the same. The disclosed comprises: a main semiconductor chip having a plurality of main chip pads and operating as a lead frame or a substrate; a plurality of metal patterns electrically connected to each corresponding main chip pad and having electrodes formed on both ends; one or more sub semiconductor chip adhered to the main semiconductor chip by adhering bumps formed on a plurality of sub chip pads to each corresponding electrode; a dam formed on the main semiconductor chip in a shape surrounding the inner electrodes except for the outer electrodes on the outmost region of the main semiconductor chip; filling materials filled up in the dam; and a plurality of solder balls adhered on the outmost electrodes.

Abstract: A barrier device includes a first containment chamber and a second containment chamber. The first containment chamber is secured to the second containment chamber by a connector. A barrier wall includes a first barrier device having a first containment chamber, a second containment chamber, and a connector. A containment chamber of a second barrier device is positioned between the first containment chamber and the second containment chamber and is positioned in overlying relationship to the connector. A barrier wall is built by positioning a first barrier device, having a first containment chamber, a second containment chamber, and a connector on a support surface. A containment chamber of a second barrier device is positioned between the first containment chamber and the second containment chamber of the first barrier device and overlying the connector.

Abstract: A method in which a fluid is driven into a process unit through utilization of a propulsion unit operating in a process mode. A process is performed which utilizes the fluid in the process unit. The propulsion unit is set to operate in a recycle mode and fluid contaminated by the process is driven into a recycling unit through utilization of the propulsion unit. A system comprises a process unit that utilizes a liquid to perform a process. A recycling unit recycles fluid contaminated by the process. A propulsion unit coupled to the process unit and the recycling unit is adjustable between a process mode and a recycle mode.

Abstract: The present invention relates to a method and apparatus for decoding symbols each representing a digital word including a turbo encoded bit, a parity bit and at least one uncoded bit. A first soft metric generator produces a soft metric of the encoded bit in each symbol and one or more second soft metric generators generate a soft metric of the or each uncoded bit in each symbol. A turbo decoder decodes the soft metric of the encoder bit so as to produce a hard value and a soft estimate of the encoded bit. A turbo encoder encode the hard value of the encoded bit to produce a reconstruction of the encoded bit and two parity bits. A puncture module punctures the parity bits once. One or more hard decision modules produce a hard decision for the or each uncoded bit of each symbol.

Abstract: The disclosed semiconductor device includes a semiconductor substrate, a logic circuit area formed on the semiconductor substrate, the logic circuit area includes transistors for driving bit lines, and a ferroelectrics memory area laminated on the logic circuit area and including a transistor area and a capacitor area. Also the disclosed method of fabricating the semiconductor device includes the steps of forming a logic circuit area on a semiconductor substrate, the logic circuit area includes interconnection wirings connected to transistors for driving bit lines, forming bit lines electrically connected to the interconnection wirings at the upper side thereof, forming a silicon film connected to the bit lines at the upper side thereof and defining a cell forming area, forming transistors on the silicon film, each transistor including a gate electrode, a source electrode, and a drain electrode, and forming capacitors electrically connected to the source electrodes at the upper side of the transistor.

Abstract: A method and apparatus for accessing Internet using voice and audio instead of a conventional visual display. POTS (Plain Old Telephone Service) can be used to access the Internet by calling an “audio” ISP (Internet Service Provider) and interacting with an Intelligent Agent. An Audio ISP uses a standard telephone (POTS, digital or analog cellular telephone, PCS telephone, satellite telephone, etc.) instead of a modem, telephone line and traditional data ISP. The Intelligent Agent (IA) takes information from the caller, accesses the Internet, retrieves the desired information and reads it back to the caller using a voice signal. The IA can surf the net by responsively interacting with the caller using voice. The IA does not need a web browser. The IA does not require any change in the current world wide web data format to support audio. The IA works with the existing web data format. Users can also access email (both send and receive) by talking and listening through the IA using POTS.

Abstract: An object of the present invention is to provide a color filter for reliably preventing the liquid crystal layer from being contaminated with ionic materials, as well as a liquid crystal display excellent in display qualities. To achieve the object described above, the present invention provides a color filter comprises a substrate, a resin colored layer consisting of a plurality of colors formed in a predetermined pattern on the substrate, and a common transparent electrode layer, said resin colored layer bringing about a voltage holding ratio of 80% or more and a residual DC (&Dgr;E) of 0.5 V or less in a liquid crystal subjected to treatment for extraction of impurities.

Abstract: A low voltage differential swing (LVDS) signal driver having substantially constant output differential voltage (Vod) and substantially constant output offset voltage (Vos) irrespective of variations in circuit fabrication processes, power supply voltages and operating temperatures (PVT), as well as circuit load conditions. A driver replica circuit which replicates a portion of the actual LVDS driver circuit conducts a driver replica operating current that is a scaled replica of the LVDS driver operating current. Operating voltages within the LVDS driver and driver replica circuits are monitored and controlled by bias voltages provided by the driver replica circuit. The desired scaling factor for the operating currents is ensured by appropriate scaling of the sizes of the circuit devices within the LVDS driver and driver replica circuits.

Abstract: A method for forming wiring in a semiconductor device comprises the steps of: forming a trench in a desired place on a silicon substrate, forming a thermal oxidation layer on the surface of the trench, forming wiring by filling a conductive layer in the lower part of the trench, forming an insulating layer on the wiring, removing the thermal oxidation layer over the insulating layer, forming an epitaxial silicon layer so that the trench is filled completely, forming a contact hole exposing the wiring by etching the epitaxial silicon layer and the insulating layer, forming an insulating spacer on the side walls of the contact hole, and forming a wiring plug in the contact hole in which the insulating layer has been formed. In the method for forming such wiring in the semiconductor device, metal wiring is formed in the silicon substrate.

Abstract: The present invention comprises an additive for compound feed for pigs, sheep, goats, poultry, cattle, horses, dogs, cats and fur-bearing animals, which contains an organic or inorganic acid, or salts thereof, espacially formic acid, with a beneficial effect on the treatment of compound feed, and a spent sulphite liquor from an acidic or neutral cellulose sulphite cook. The additive contains the acid or salts thereof in an amount ranging from 10-90 percentage weight, and the spent sulphite liquor in an amount ranging from 10-90 percentage weight. The additive is added is added to the compound feed in an amount ranging from 0,2 to 3,0 %. The spent sulphite liquor can be adsorbed on a suitable carrier, such as soy meal or water-adsorbing silicates, in order to attain a dry composition.

Abstract: A shadow mask for a Braun tube is composed of an iron-based alloy plate of a low thermal expansion structure containing nickel and cobalt, and the iron-based alloy plate has a crystal grain size of more than 6.0 and less than 9.0 measured by a grain size measuring method prescribed in JIS (Japanese Industrial Standard) G0551, and 0.2% proof stress of more than 240N/mm2 and less than 320N/mm2.

Abstract: An method for fabricating a semiconductor device reduces a size of a MOSFET by self aligning a gate electrode with a device isolation insulation film. Thus, the gate electrode is not overlapped with the device isolation insulation film, differently from a conventional method for forming a MOSFET by partially overlapping the gate electrode with the device isolation insulation film in consideration of misalignment and CD variations in a mask process. As a result, a size of the MOSFET is reduced, thereby efficiently achieving the high integration of the semiconductor device.

Abstract: The present invention discloses a dynamic random access memory and the method for fabricating thereof. A first silicon substrate having a trench capacitor and a second silicon substrate having a transistor are formed with a double layer, which is interposed an insulation layer between therewith, thereby forming a trench capacitor at a region, which is used to be formed a transistor in the conventional art. Accordingly, when forming the trench capacitors, in which the numbers are the same as the conventional art, at the same silicon substrate area, a trench capacitor with large in diameter and shallow in depth can be formed, thereby performing a trench capacitor forming process. According to the present invention, after forming a trench, successive processes become easy and reliability of device can be enhanced.

Abstract: A UV laser beam is used to machine semiconductor. The beams intensity (IB) is chosen so that it lies in a range of such values for which there is an increasing (preferably linear) material removal rate for increasing IB An elongate formation such as a trough or a slot is machined in n scans laterally offset (O_centre), for each value of z-integer in the z direction.

Abstract: An object of the present invention is to provide a high photo-sensitivity curable resin. And another object is to prevent the viscosity increase, or to improve the transparency of said photo-curable resin, if necessary. An isocyanate compound containing a radical polymerizable group is reacted with a raw material polymer having a principal chain comprising an unit having an acid functional group and an unit having a hydroxyl group in the irate of 1.0 or more in terms of the equivalent ratio of the isocyanate group to the hydroxyl groups in said principal chain (NCO/OH). Moreover, when a raw material polymer is produced, its transparency is improved by using an azo polymerization initiator of non-nitrile series or a peroxide-based polymerization initiator. Use of any polymerization inhibitor selected from the groups of compounds shown in formula (9) or formula (15) can also improves transparency when introducing the isocyanate compound into the raw material.

Abstract: A Time Division Multiple Access (TDMA) mobile station architecture consuming less power and random access memory (RAM) is presented herein. The mobile station includes a coprocessor which executes frame programs. The frame programs include instructions which address memory. The memory includes page addresses and byte addresses. The instructions of the frame program address the page addresses and byte addresses. A particular page address is reserved as a null page address, wherein any instruction addressing the null page address causes the memory locations of the most recently accessed memory page to be accessed.

Abstract: An amplifier with Miller-effect frequency compensation in which the Miller feedback capacitor is connected to an internal terminal of the amplifier having a low impedance, and shunt compensation circuitry is connected to an intermediate signal terminal that drives the output amplifier stage. The compensation circuitry, which includes serially coupled capacitive and resistive circuit elements, introduces a high frequency zero to cancel one of the high frequency complex poles introduced by the Miller feedback capacitor connection.