Abstract: An acoustic wave filter (10) and a method (30) of forming the acoustic wave filter (10) are disclosed. The acoustic wave filter includes a substrate (20) supporting a first die (18) and a second die (18). The first die (18) and second die (18) include either a Surface Acoustic Wave (SAW) resonator or a Bulk Acoustic Wave (BAW) resonator, wherein one of the resonators is configured as a series resonator (12) of the acoustic wave filter (10) and the other resonator is configured as a shunt resonator (14) of the acoustic wave filter (10).

Abstract: A magnetoresistive memory fabricated on a common substrate. The memory including first and second spaced apart magnetoresistive memory arrays each including a plurality of MTJ memory cells arranged in rows and columns and a plurality of word/digit lines associated with the rows of magnetoresistive memory cells of each of the arrays. Switching circuitry is positioned on the substrate between the first and second arrays and designed to select a word/digit line in one of the first and second arrays. A current source is positioned on the substrate adjacent and coupled to the switching circuitry for supplying programming current to the selected word/digit line.

Abstract: Low profile interconnect structure includes an electronic circuit module with a plurality of mounting areas and a plurality of electrical contact areas defined by the mounting surface. The plurality of mounting areas are spaced a first distance from a mounting and interconnect surface parallel to and spaced from the mounting surface and the plurality of electrical contact areas are spaced a second distance, less than the first distance, from the mounting and interconnect surface. Large solder balls are used between the mounting areas and the mounting and interconnect surface to form a solid mount and smaller solder members are used for electrical interconnections.

Abstract: A method for scrubbing and passivating an anode plate (100) of a field emission display (120) includes the steps of providing a scrubbing passivation material (127); imparting to scrubbing passivation material (127) an energy selected to cause removal of a contamination layer (123, 117) from anode plate (100); causing scrubbing passivation material (127) to be received by contamination layer (123, 117), thereby removing contamination layer (123, 117); and depositing at least a portion of scrubbing passivation material (127) on anode plate (100), thereby forming a passivation layer (129).

Abstract: A vacuum microelectronic device (10,40) is formed by applying a first conductor (13,14) to a substrate (11) and utilizing the first conductor (13,14) to expose a dielectric material (18) and a second conductive material (19) from a back surface of the substrate (11). A second conductor (29) and a dielectric (28) are formed from the second conductive material (19) and the dielectric material (18), respectively. This method self-aligns the dielectric (28) and the second conductor (29) with the first conductor (13,14). Electron emitters (31,33) of the vacuum microelectronic device (10,40) are formed on the first conductor (13,14).

Abstract: A multiphase dielectric composition for a multilayered ceramic device (10), and devices incorporating the same, including a (SrCa)TiO3 dielectric powder and a glass that is substantially free of lead having a weight ratio of about 35 to about 65 parts powder: about 65 to about 35 parts glass, and having a particle size of about 1 to about 2.5 micron (um) and having a dielectric constant (K) of about 18 to about 30 and an electrical Q of at least about 300 to about 550.

Abstract: A viewing screen (100) for a display device (115) includes a glass substrate (110) having a thermal coefficient of expansion within a range of 3.5×10−6−4.5×10−6 °C.−1. Viewing screen (100) further includes a black matrix (111), which is affixed to glass substrate (110), and which includes a black surround, a ductile metal, and lead titanate. A method for fabricating viewing screen (100) includes the steps of: adding to a black surround paste a ductile metal paste, adding to the black surround paste lead titanate particles, depositing the black surround paste on glass substrate (110), and heating the black surround paste and glass substrate (110) to affix the black surround paste to glass substrate (110), thereby forming black matrix (111). The ductile metal paste and lead titanate particles are added in amounts sufficient to realize an extent of cracking in black matrix (111) upon repeated heating to a temperature within a range of 450-600° C.

Abstract: A field emission device (100) includes an electron emitter (115) and an emitter-enhancing electrode (117) having an enhanced-emission structure (131), which is disposed proximate to electron emitter (115). Enhanced-emission structure (131) is embodied by, for example, each of the following structures: a tapered portion (118) of emitter-enhancing electrode (117), an electron-emissive edge (135) that is generally parallel to an axis (136) of electron emitter (115), a combination of a conductive layer (137) and an electron-emissive layer (138) that is disposed proximate to an edge (133) of conductive layer (137), and an electron-emissive layer (146) having a thickness of less than about 500 angstroms.

Abstract: An improved and novel multi-layer thin film device including a graded-stoichiometry insulating layer (16) and a method of fabricating a multi-layer thin film device including a graded-stoichiometry insulating layer (16). The device structure includes a substrate (12), a first electrode (14), a second electrode (18), and a graded-stoichiometry insulating, or tunnel-barrier, layer (16) formed between the first electrode (14) and the second electrode (18). The graded-stoichiometry insulating tunnel-barrier layer (16) includes graded stoichiometry to compensate for thickness profile and thereby produce a uniform tunnel-barrier resistance across the structure (10).

Abstract: A magnetoresistive midpoint generator includes an input and an output terminal and four non-volatile magnetoresistive elements. Each element is programmable into a resistance equal to one of Rmax and Rmin, where Rmin is a minimum resistive value corresponding to parallel states of magnetization and Rmax is a maximum resistive value corresponding to anti-parallel states of magnetization. First and second series circuits, each series circuit including a magnetoresistive element with a resistance equal to Rmax connected in series with a magnetoresistive element with a resistance equal to Rmin, are connected in parallel between the input and output terminals, whereby a total resistance between the input and output terminals is a midpoint between Rmax and Rmin.

Abstract: A fuel cell system and method of forming the fuel cell system including a base portion, formed of a singular body, and having a major surface. At least one fuel cell membrane electrode assembly is formed on the major surface of the base portion. A fluid supply channel including a mixing chamber is defined in the base portion and communicating with the fuel cell membrane electrode assembly for supplying a fuel-bearing fluid to the membrane electrode assembly. An exhaust channel including a water recovery and recirculation system is defined in the base portion and communicating with the membrane electrode assembly. The membrane electrode assembly and the cooperating fluid supply channel and cooperating exhaust channel forming a single fuel cell assembly.

Abstract: This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), an optional etch stop layer (16) formed on a surface (14) of the substrate (12), and a patterning layer (20) formed on a surface (18) of the etch stop layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template.

Abstract: Readout circuitry for a magnetic tunneling junction (MTJ) memory cell, or an array of MTJ memory cells, is disclosed which requires a varying reference voltage equal to (Vbias1/2) (1+Rmin/Rmax) where Vbias1 is a clamping voltage applied to the readout circuitry, Rmin is a minimum resistance of the magnetic tunneling junction memory cell, and Rmax is a maximum resistance of the magnetic tunneling junction memory cell.

Abstract: A method for improving life of a field emission display (100), which has a plurality of electron emitters (118) and an anode (124), includes the steps of causing plurality of electron emitters (118) to emit electrons, applying a first anode voltage to anode (124), thereafter applying a second anode voltage to anode (124), and thereafter applying a third anode voltage to anode (124). The first anode voltage and the second anode voltage are selected to cause electrons emitted by plurality of electron emitters (118) to be attracted toward anode (124). The third anode voltage is selected to cause electrons emitted by plurality of electron emitters (118) to not be attracted toward anode (124). Furthermore, the second anode voltage is selected to be less than the first anode voltage.

Abstract: A distributed amplifier (40) and a method (100) of operating the distributed amplifier (40) are provided in accordance with the present invention. The distributed amplifier (40) comprises an input transmission line (48), an output transmission line (50) and N amplifier sections (42,44,46) having a transistor (52) connected to the input transmission line (48) and the output transmission line (50).

Abstract: A method of marking glass includes providing a glass material with a surface (201) and using a wire (210) to mark the surface. The wire is softer than the glass material and does not damage the surface of the glass material.

Abstract: An improved and novel fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14) , a second electrode (18) and a spacer layer (16). The first electrode (14) includes a fixed ferromagnetic layer (26) having a thickness t1. A second electrode (18) is included and comprises a free ferromagnetic layer (28) having a thickness t2. A spacer layer (16) is located between the fixed ferromagnetic layer (26) and the free ferromagnetic (28) layer, the spacer layer (16) having a thickness t3, where 0.25t3<t1<2t3, thereby producing near zero magnetic field at the free ferromagnetic layer (28).

Abstract: A field emission device (100, 200, 300, 400, 500) includes a substrate (110, 210, 310, 410, 510), a cathode (115, 215, 315, 415, 515) formed thereon, a plurality of electron emitters (170, 270, 370, 470, 570) and a plurality of gate electrodes (150, 250, 350, 450, 550) proximately disposed to the plurality of electron emitters (170, 270, 370, 470, 570) for effecting electron emission therefrom, a dielectric layer (140, 240, 340, 440, 540) having a major surface (143, 243, 343, 443, 543), a surface passivation layer (190, 290, 390, 490, 590) formed on the major surface (143, 243, 343, 443, 543), and an anode (180, 280, 380, 480, 580) spaced from the gate electrodes (250, 350, 450, 550).

Abstract: A thermoelectric power generator and method of generating thermoelectric power in a steam power cycle utilizing latent steam heat including a condenser, a heat source, such as steam, and at least one thermoelectric module. The condenser includes a plurality of condenser tubes each having included therein a heat extractor. The heat source is in communication with the condenser and is characterized as providing thermal energy to the condenser. The at least one thermoelectric module, including a plurality of thermoelectric elements, is positioned in communication with at least one of the plurality of condenser tubes so that thermal energy flows through the thermoelectric elements thereby generating electrical power.

Abstract: An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer formed on the surface of the substrate, and a resist layer formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.