Abstract: A field emission display (100, 200) includes a cathode plate (102, 302), an anode plate (104, 204, 304), and a hydrogen source (146, 148, 129, 150, 246, 346, 270), which is preferably disposed on cathode plate (102, 302) or anode plate (104, 204, 304). Hydrogen source (146, 148, 129, 150, 246, 346, 270) is distributed over the active area of field emission display (100, 200) and is made from a metal hydride, which is selected from the group consisting of titanium hydride, vanadium hydride, zirconium hydride, hafnium hydride, niobium hydride, and tantalum hydride. The metal hydride can be activated to provide an isotope of hydrogen in situ.

Abstract: A magnetoresistive tunneling junction memory cell (10) including a pinned ferromagnetic region (17) having a magnetic moment vector (47) fixed in a preferred direction in the absence of an applied magnetic field wherein the pinned ferromagnetic region has a magnetic fringing field (96), an electrically insulating material positioned on the pinned ferromagnetic region to form a magnetoresistive tunneling junction (16), and a free ferromagnetic region (15) having a magnetic moment vector (53) oriented in a position parallel or anti-parallel to that of the pinned ferromagnetic region wherein the magnetic fringing field is chosen to obtain a desired switching field.

Abstract: A method for forming an electrically isolated via in a multilayer ceramic package and an electrical connection formed within the via are disclosed. The method includes punching a first via in a first layer, filling the first via with a cross-linkable paste, curing the paste to form an electrical insulator precursor and forming the via in the insulator precursor. The electrical connection formed includes an insulator made from a cross-linked paste supported by a substrate of a multilayer ceramic package and a conductive connection supported by the insulator.

Abstract: An alignment mark (51) is formed on the surface (64) of a silicon carbide substrate (50). The alignment mark (51) is used to reflect a light signal (72) to determine the proper position for the silicon carbide substrate (50). The materials that are used to form the alignment mark (51) can be used to form an alignment mark on any transparent or semi-transparent substrate and will maintain physical integrity through very high temperature processing steps.

Abstract: A vacuum gap dielectric field emission triode and a method of fabrication include a conductive layer positioned on a supporting substrate and an emitter positioned on the conductive layer. A gate metal layer electrically separated from the conductive layer defines a metal bridge gate surrounding the emitter and separated from the emitter by a substantially fixed distance. The gate metal layer defines a gate opening through the metal bridge gate overlying the emitter. An anode is positioned in spaced relationship to the gate metal layer and the triode is sealed in a substantial vacuum so that the emitter is separated from the metal bridge by the substantial vacuum and the metal bridge is separated from the anode by the substantial vacuum.

Abstract: A method of treating a first chemical species in a gas using a plasma, the method including the steps of providing an array of micro-scale cavity discharge devices capable of sustaining the plasma where the first chemical species is capable of flowing proximate to the array of micro-scale cavity discharge devices, wherein the first chemical species is converted to a second chemical species within the plasma.

Abstract: A multilayer ceramic micropump including a monolithic ceramic package formed of a plurality of ceramic layers defining therein an integrated first ball check valve, and a second ball check valve in microfluidic communication with the first ball check valve, and an actuator characterized as actuating a pumping motion, thereby pumping fluids through the first ball check valve and the second ball check valve.

Abstract: Processing equipment with embedded MRAMs, and a method of fabricating, including a data processing device fabricated on a semiconductor chip with MRAM cells fabricated on the chip to form one to all of the memories on the chip. Also included is a dual bank memory in communication with the data processing device and circuitry coupled to the data processing device and the dual bank memory for providing simultaneous read access to the dual bank memory.

Abstract: Method reducing cross-talk between adjacent column conductors in a field emission display (10) that has a plurality of column conductors (17A, 17B, 17C, 18A, 18B, 18C) on which electron emission structures (24) are disposed. The field emission display (10), also includes a plurality of row conductors (27, 28, 29). Cross-talk is prevented by ensuring that adjacent conductors are not in an active state at the same time.

Abstract: A method of forming a nano-supported sponge catalyst (10) on a substrate (12) is comprised of depositing an active catalytic metallic element (16) on the substrate (12) and depositing a structural metallic element (18) with the active catalytic metallic element (16) to form a mixed metal alloy layer (14). The method is further comprised of etching the mixed metal alloy layer (14) with an etchant to oxidize the active catalytic metallic element (16) and the structural metallic element (18) and to remove at least a portion of the structural metallic element (18) from a first sub-layer of the mixed metal alloy layer (14). The first sub-layer of the mixed metal alloy layer (14) is porous and comprised of nano-particles of the active catalytic metallic element (16) that are supported by a metal oxide structure derived from the structural metallic element (18).

Abstract: A self oscillating mixer circuit includes a dual gate FET, an NDR device coupled to a first gate of the FET, and a first bias input circuit adapted to couple a first bias voltage across the NDR device. The first bias voltage controls operation of the NDR device within an NDR region of the V-I characteristic curve of the NDR device so that oscillations occur in the NDR device and the FET. The first bias input circuit is adjustable to adjust the applied first bias voltage so as to control frequency and amplitude of the oscillations. An RF input terminal and a second bias input circuit are coupled to supply a second bias voltage at the other gate terminal, which biases the FET at maximum gain so that RF signals applied to the RF input terminal are mixed with the oscillations.

Abstract: A microhollow cathode discharge (MHCD) cavity and microfluidic channel are combined for interrogation of samples. The apparatus includes a dielectric body and layers of conductive material defining a MHCD cavity containing an environment for carrying a gas discharge within the MHCD cavity. The gas discharge generates gas based electromagnetic waves. Electrical connections apply a cathode discharge potential to the layers of conductive material. A microfluidic channel is integrated on the substrate, and a path extends from the MHCD cavity laterally through a portion of the microfluidic channel. A detector, which may be integrated on the common substrate, is positioned to receive electromagnetic waves from the path and electronic circuitry is coupled to the detector for acquiring and processing data.

Abstract: The lithographic template is formed having a substrate, an optional etch stop layer formed on a surface of the substrate, and a patterning layer formed on a surface of the etch stop layer. The template is used in the fabrication of a semiconductor device for affecting a pattern in the device by positioning the template in close proximity to the semiconductor device having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template is then removed to complete fabrication of the semiconductor device.

Abstract: A magnetic layer (46) of a magnetoelectronics element (40) is provided that has a first sub-element layer (48) and a second sub-element layer (50). The first sub-element layer (48) is configured to have a first area and the second sub-element layer (50) is configured to have a second area that is less than the first area.

Abstract: An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer, formed on the surface of the substrate, and a resist layer formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.

Abstract: A field emissive display (40) having an anode plate (10) coupled to a cathode plate (20) and a method for manufacturing the field emissive display (40). A substrate (21) of the cathode plate (20) is manufactured or selected such that its coefficient of thermal expansion substantially matches that of the anode plate (10), i.e., the coefficients of thermal expansion of the cathode plate (20) and the anode plate (10) are within ten percent of each other. The cathode plate (20) is coupled to the anode plate (10) by means of a frit structure (41) whose coefficient of thermal expansion preferably substantially matches that of the cathode plate (20) and the anode plate (10). A control circuit can be mounted to the bottom surface of the field emissive display (40).

Abstract: A field emission device (100) includes an electron emitter structure (105) having a deuteride layer (108), which defines a surface (109) of electron emitter structure (105). Deuteride layer (108) is disposed upon an electron emitter (106), which is made from a metal. Deuteride layer (108) is a deuteride of the metal from which electron emitter (106) is made. A method for conditioning field emission device (100) includes the step of providing a contaminated cathode structure (137), which has a contaminated emitter structure (138). The method further includes the step of causing deuterium to react with a metal oxide layer (140) of emitter structure (138), so that the deuterium replaces the oxygen of metal oxide layer (140).

Abstract: A fuel processor and integrated fuel cell including a monolithic three-dimensional multilayer ceramic carrier structure defining a fuel reformer and including an integrated fuel cell stack. The reformer includes a vaporization zone, a reaction zone including a catalyst, and an integrated heater. The integrated heater is thermally coupled to the reaction zone. The fuel processor further includes an inlet channel for liquid fuel and an outlet channel for hydrogen enriched gas. The fuel processor is formed utilizing multi-layer ceramic technology in which thin ceramic layers are assembled then sintered to provide miniature dimensions in which the encapsulated catalyst converts or reforms inlet fuel into a hydrogen enriched gas.

Abstract: A process and apparatus for solving the product y=Rw, where R is a matrix and w is a vector. The process includes a steps of using a matrix outer product structure of R to determine all of the unique entries in R and storing the unique monomials. A different unique number is assigned to unique entries so that each unique entry has an associated number, and the associated numbers are stored. Rw is then solved using the stored associated numbers to obtain a result in terms of the associated numbers, and converting the result to entries from the matrix R. In the preferred embodiment, the process is used for iterative training in a classification system and especially a classification system on a portable platform.

Abstract: A field emission device (200) includes a cathode plate (110) having a back plate (112) made from glass and an anode plate (120) having a transparent substrate (122) also made from glass. A first charge control electrode (152) is affixed to a distal surface (148) of back plate (112), and a second charge control electrode (158) is affixed t0 the periphery of transparent substrate (122). A ballast resistor (114) is disposed on a proximate surface (155) of back plate (112). A method for operating told omission device (200) includes the stop of controlling a potential applied to first charge control electrode (152) in a manner sufficient to control the conductivity of ballast resistor (114) and provide an electron current (138) that is constant. The method further includes the step of controlling a potential applied to second charge control electrode (158) in a manner sufficient to prevent arcing due to wild up or charge within transparent substrate (122).