Abstract: A semiconductor memory apparatus includes: an address buffer configured to buffer an input address and generate a buffered address; a command buffer configured to buffer a chip selection command and generate a buffered command; a latch control unit configured to receive an internal clock and the buffered command and generate a latch control signal; and an address latch unit configured to latch the buffered address based on the latch control signal.

Abstract: A test circuit of a semiconductor memory apparatus includes: a test control signal generating unit configured to enable a control signal if an active signal is enabled after a test signal is enabled, and substantially maintain the control signal in an enable state until a precharge timing signal is enabled; and a precharge control unit configured to invert the control signal to output the inverted signal as a bit line precharge signal when a preliminary bit line precharge signal is in a disable state.

Abstract: A semiconductor memory apparatus is provided. The semiconductor memory apparatus comprises: first and second memory banks located a predetermined distance from each other in a first direction; a common column selection control unit located at an outside region in the first and second memory banks in the first direction, and configured to commonly control access to column areas in the first and second memory banks and generate a column selection signal that controls data access to the corresponding memory cells in the first and second memory banks; a first data read/write unit configured to sense and amplify read data transferred from the first memory bank and transfer write data to the first memory bank; and a second data read/write unit configured to sense and amplify read data transferred from the second memory bank and transfer write data to the second memory bank.

Abstract: A NAND string, its operation, and manufacture is described herein. The NAND string includes one or more memory cells, a first selection transistor coupled to the memory cells, and a second selection transistor coupled between the memory cell and the first selection transistor, wherein the second selection transistor has a process defined threshold voltage.

Abstract: A semiconductor apparatus includes a plurality of pump control units respectively located in a plurality of chips, connected in series through a first TSV, and configured to sequentially delay a period signal, transmit delayed period signals and generate pump control signals based on the period signal or the delayed period signals; and a plurality of voltage pump units respectively located in the plurality of chips, and configured to generate a pumping voltage in response to the pump control signals generated from the plurality of pump control units.

Abstract: A refresh control circuit of a semiconductor memory apparatus includes: a variable oscillator configured to generate a room-temperature oscillation signal and a limit-temperature oscillation signal in response to a temperature state signal; a cycle selector configured to selectively output the room temperature oscillation signal and the limit-temperature oscillation signal as a variable oscillation signal in response to the temperature state signal; a refresh signal generator configured to generate a refresh signal in response to the variable oscillation signal and a fixed oscillation signal; and a temperature state detector configured to generate the temperature state signal by detecting current temperature in response to the room-temperature oscillation signal and the fixed oscillation signal.

Abstract: A semiconductor circuit includes a pad, a pad driver connected to the pad at an output terminal thereof and configured to calibrate a voltage of the pad in response to code signals, a comparison section configured to compare a reference voltage and the voltage of the pad and generate a comparison signal, and a code generation section configured to calibrate code values of the code signals in response to the comparison signal.

Abstract: A semiconductor apparatus includes a reference voltage generation unit, a comparison voltage generation unit, and a calibration unit. The reference voltage generation unit is disposed in a reference die and configured to generate a reference voltage. The comparison voltage generation unit is disposed in a die stacked on the reference die and configured to generate a comparison voltage in response to a calibration control signal. The calibration unit is configured to compare a level of the reference voltage with a level of the comparison voltage and generate the calibration control signal.

Abstract: A clock duty correction circuit includes a first current sourcing unit that sources a current to a current path in response to a clock signal, a first current sinking unit that sinks the current of the current path in response to the clock signal, a second current sourcing unit that sources a current to the current path in response to a delay clock signal obtained by delaying the clock signal by a predetermined time, a second current sinking unit that sinks the current of the current path in response to the delay clock signal, a current adjustment unit that adjusts an amount of the current flowing through the current path according to a voltage level of a control voltage, and a clock output unit that outputs an output clock signal having a voltage level corresponding to the amount of the current flowing through the current adjustment unit.

Abstract: A flag signal generation circuit includes a first periodic signal detection unit, a second periodic signal detection unit, and a flag signal output unit. The first periodic signal detection unit is configured to detect a change in a level of a first periodic signal and generate a first detection signal. The second periodic signal detection unit is configured to detect a change in a level of a second periodic signal and generate a second detection signal. The flag signal output unit is configured to generate a pre-flag signal from the first and second detection signals, buffer the pre-flag signal in response to a mode register read signal, and output the buffered pre-flag signal as a flag signal.

Abstract: A write driving device includes a buffer unit, a duration signal generation unit, and a data input clock pulse generation unit. The buffer unit is configured to generate an alignment signal in response to a transition timing of a data strobe signal. The duration signal generation unit is configured to generate a duration signal which is enabled during a predetermined duration in response to a write command. The data input clock pulse generation unit is configured to generate a data input clock pulse for transferring data to a global line in response to the alignment signal within an enable duration of the duration signal.

Abstract: Various embodiments of a semiconductor integrated circuit. According to one exemplary embodiment, a semiconductor integrated circuit includes a multi-phase clock generator that is configured to generate a multi-phase internal clock; a first edge combining unit that is configured to generate a first output clock having a first frequency by combining rising edges of clocks included in the internal clock, and transmit the first output clock to a first port; and a second edge combining unit that is configured to generate a second output clock having a second frequency by combining rising edges of clocks included in the internal clock, and transmit the output clock to a second port.

Abstract: A test circuit transfers data, which is generated by current supplied from an external source, to a memory cell in response to a test mode signal.

Abstract: The disclosed phase change random access memory apparatus is configured to program a predetermined phase change memory cell in the phase change memory apparatus in response to a plurality of write instructions applied at independent points of time.

Abstract: A bulk bias voltage generating device is configured to generate a first bulk bias voltage in a deep power down mode and a second bulk bias voltage in a normal mode. The first bulk bias voltage comprises an internal voltage level, and the second bulk bias voltage comprises an external voltage level.

Abstract: An impedance calibration circuit includes: a first calibration unit configured to compare a first converted voltage obtained by converting a first calibration signal with a reference voltage and vary the first calibration signal; a voltage detection unit configured to activate a voltage detection signal according to a level of a power supply voltage; a multiplexing unit configured to select and output the reference voltage or the first converted voltage in response to the detection signal; and a second calibration unit configured to compare a second converted voltage obtained by converting a second calibration signal with the level of the output signal of the multiplexing unit and vary the second calibration signal.

Abstract: The present invention relates to a liquid crystal display, comprising a lower alignment film formed on a lower substrate; an upper alignment film formed on an upper substrate; a liquid crystal layer sandwiched between the lower and upper substrates; a phase compensation film adhered on the outer surface of the upper substrate; and a polarizer adhered on the phase compensation film wherein the lower alignment film has an alignment angle of ?10 to 20° with respect to a horizontal line, the upper alignment film has an alignment angle of 40 to 55° with respect to a horizontal line, the liquid crystal layer has a phase delay value (d?n) of 0.24-0.27 ?m, the phase compensation film has a phase compensation function of ?/4 and also has an optical axis making 140-146° with a horizontal line, and the polarizer has a absorption axis making 120 to 122.5° with a horizontal line.

Abstract: A power-on reset signal generation circuit of a semiconductor memory apparatus includes an external voltage level detector configured to detect an external voltage and generate an external voltage detection signal; a band gap voltage generation unit configured to generate a band gap voltage in response to the external voltage detection signal; a level detection voltage dividing unit configured to divide the external voltage depending upon a level of the band gap voltage and generate a division voltage; and a power-on reset signal generation unit configured to compare the level of the band gap voltage with a level of the division voltage and generate a power-on reset signal.

Abstract: An input buffer includes a driving signal generation unit, a comparison signal generation unit, and a driving unit. The driving signal generation unit is configured to generate first and second driving signals which are selectively enabled in response to a control signal generated depending on a level of an input signal. The comparison signal generation unit is configured to compare the level of the input signal with the level of a reference voltage and generate a comparison signal. The driving unit is configured to buffer the comparison signal and drive an output signal with a drivability determined by the first and second driving signals.

Abstract: A semiconductor buffer circuit that operates stably against PVT fluctuation is disclosed. The disclosed semiconductor buffer unit of the present invention includes: a detecting block configured to generate a plurality of code signals by detecting an external voltage, using a plurality of reference voltages; and a buffer unit configured to receive an input signal and the plurality of code signals and, based on the code signals, to generate an output signal, wherein a consumption of a driving current of the buffer unit is controlled based on the code signals.