Patents Assigned to Advanced Institute of Science and Technology
  • Patent number: 10701516
    Abstract: A server may include a communication circuit communicating with a user terminal, storage including a fingerprint DB storing fingerprints corresponding to a plurality of points and a signal fluctuation probability DB, and a processor electrically connected to the communication circuit and the storage. The processor may be configured to store similarity between first signal strength and second signal strength, which are determined based on a probability that a pair of the first signal strength and the second signal strength received from a first AP occurs with respect to fingerprints corresponding to a first point, in the signal fluctuation probability DB, to obtain a fingerprint including signal strength received from the first AP, from the user terminal, and to determine a location of the user terminal based on the obtained fingerprint and the signal fluctuation probability DB.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: June 30, 2020
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Sung Hwan Ahn, Byeong Cheol Moon, Suk Hoon Jung, Dong Soo Han, Kyung Shik Roh, Suk June Yoon
  • Patent number: 10700656
    Abstract: A wideband variable gain amplifier (VGA) having a low phase change is disclosed. The first VGA amplifies an input signal by a current steering manner so that an amplification gain is variable. The larger a variable gain amount of the first output signal amplified by the first VGA is, the more a relative phase change amount gradually increases in either positive direction or negative direction. The second VGA further amplifies the first amplified output signal in the current steering manner so as to vary the amplification gain. As a variable gain amount of a second output signal amplified by the second VGA becomes larger, a relative phase change amount gradually increases in a direction opposite to the phase change direction of the first VGA. This opposing phase changes of the first and second VGAs are canceled against each other to provide a variable amplification gain over the wideband frequency range with a low phase change.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: June 30, 2020
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: ChulSoon Park, SeungHun Kim
  • Patent number: 10699160
    Abstract: A processor-implemented neural network method includes: obtaining, from a memory, data an input feature map and kernels having a binary-weight, wherein the kernels are to be processed in a layer of a neural network; decomposing each of the kernels into a first type sub-kernel reconstructed with weights of a same sign, and a second type sub-kernel for correcting a difference between a respective kernel, among the kernels, and the first type sub-kernel; performing a convolution operation by using the input feature map and the first type sub-kernels and the second type sub-kernels decomposed from each of the kernels; and obtaining an output feature map by combining results of the convolution operation.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: June 30, 2020
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Sehwan Lee, Leesup Kim, Hyeonuk Kim, Jaehyeong Sim, Yeongjae Choi
  • Publication number: 20200203486
    Abstract: Provided is a method for manufacturing a doped graphene thin film having a mesoporous structure using a flash lamp, which comprises: a step of coating a mixture solution of a doping element source-containing material comprising a doping element and graphene oxide on a substrate; and a step of irradiating light to the coated mixture solution using a flash lamp, thereby carrying out reduction of the graphene oxide and doping of the doping element at the same time.
    Type: Application
    Filed: December 19, 2019
    Publication date: June 25, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Sung-Yool CHOI, Jun-Hwe CHA, Il-Doo KIM
  • Publication number: 20200199710
    Abstract: Provided is a method for preparing a transition metal dichalcogenide alloy, which includes: a step of stacking two or more transition metal dichalcogenide compound thin films having different bandgaps on a substrate; a step of irradiating light to the two or more transition metal dichalcogenide compound thin films having different bandgaps; and a step of preparing a transition metal alloy by evaporating a dichalcogenide compound of the transition metal dichalcogenide compound thin film by the light.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 25, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Sung-Yool CHOI, Gi Woong SHIM
  • Publication number: 20200193290
    Abstract: A thickness prediction network learning method includes measuring spectrums of optical characteristics of a plurality of semiconductor structures each including a substrate and first and second semiconductor material layers alternately stacked thereon to generate sets of spectrum measurement data, measuring thicknesses of the first and second semiconductor material layers to generate sets of thickness data, training a simulation network using the sets of spectrum measurement data and the sets of thickness data, generating sets of spectrum simulation data of spectrums of the optical characteristics of a plurality of virtual semiconductor structures based on thicknesses of first and second virtual semiconductor material layers using the simulation network, each of the first and second virtual semiconductor layers including the same material as the first and second semiconductor material layers, respectively; and training a thickness prediction network by using the sets of spectrum measurement data and the sets
    Type: Application
    Filed: November 8, 2019
    Publication date: June 18, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Su-il CHO, Sung-yoon RYU, Yu-sin YANG, Chi-hoon LEE, Hyun-su KWAK, Jung-won KIM
  • Publication number: 20200194595
    Abstract: Provided is a flexible thin-film transistor using a two-dimensional semiconductor material, which includes: a flexible substrate; a channel formed on the flexible substrate and formed of a two-dimensional semiconductor material; a gate insulator and a gate electrode stacked sequentially on the channel; and source and drain electrodes formed on the channel as being spaced apart from the gate electrode.
    Type: Application
    Filed: December 16, 2019
    Publication date: June 18, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Sung-Yool CHOI, Young jun WOO
  • Publication number: 20200180591
    Abstract: A damper control method for a vehicle may achieve normal control of dampers by maintaining the ride comfort enhancement effect of the ECS while reducing manufacturing costs in accordance with a reduction in the number of sensors through elimination of wheel G-sensors.
    Type: Application
    Filed: August 19, 2019
    Publication date: June 11, 2020
    Applicants: Hyundai Motor Company, Kia Motors Corporation, Korea Advanced Institute of Science and Technology
    Inventors: Seong Jun CHOI, Kyung Ho Kim, In Yong Jung, Ki Cheol Jeong, Sei Bum Choi
  • Patent number: 10678280
    Abstract: A low dropout voltage (LDO) regulator including: a coarse loop circuit configured to receive an input voltage, generate a coarse code and adjust a coarse current according to the coarse code; a digital controller configured to receive the coarse code and generate a fine loop control signal according to the coarse code; and a fine loop circuit configured to receive the input voltage and the fine loop control signal and adjust a fine current according to the input voltage and the fine loop control signal, wherein the coarse current and the fine current adjust a level of an output voltage.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: June 9, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., Korea Advanced Institute of Science and Technology
    Inventors: Gyu-Hyeong Cho, Yongjin Lee, Dae-Yong Kim, Sangho Kim
  • Patent number: 10680636
    Abstract: An analog-to-digital converter (ADC) is provided. The ADC may include an input terminal configured to receive input signals, a digital-to-analog converter (DAC), a first switch configured to control a connection between the DAC and the input terminal, a comparator, a second switch configured to control a connection between the DAC and the comparator, and a controller configured to control the first switch, the second switch, the DAC and the comparator.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: June 9, 2020
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: JongPal Kim, Ye Dam Kim, Seung Tak Ryu, Min Jae Seo, Dong Hwan Jin
  • Publication number: 20200167342
    Abstract: The inventive concept relates to a technology of sharing data between distributed SDN controllers using block-chain, and it is possible to effectively and flexibly process the security problems through a block chain-based SDN by providing fault-tolerant, verification, and debugging.
    Type: Application
    Filed: November 25, 2019
    Publication date: May 28, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Seungwon SHIN, Seungwon WOO
  • Patent number: 10664961
    Abstract: The present invention provides a technology that separates a low-contrast-ratio image into sublayer images, classifies each sublayer image into several categories in accordance with the characteristics of each sublayer image, and learns a transformation matrix representing a relationship between the low-contrast-ratio image and a high-contrast-ratio image for each category. In addition, the present invention provides a technology that separates an input low-contrast-ratio image into sublayer images, selects a category corresponding to each sublayer image, and applies a learned transformation matrix to generate a high.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: May 26, 2020
    Assignees: SILICON WORKS CO., LTD., Korea Advanced Institute of Science and Technology
    Inventors: Yong Woo Kim, Sang Yeon Kim, Woo Suk Ha, Mun Churl Kim, Dae Eun Kim
  • Patent number: 10665671
    Abstract: Disclosed is a method of manufacturing a junctionless transistor based on vertically integrated gate-all-around multiple nanowire channels including forming vertically integrated multiple nanowire channels in which a plurality of nanowires is vertically integrated, forming an interlayer dielectric layer (ILD) on the vertically integrated multiple nanowire channels, forming a hole in the interlayer dielectric layer such that at least some of the vertically integrated multiple nanowire channels is exposed, and forming a gate dielectric layer on the interlayer dielectric layer to fill the hole, wherein the forming of the gate dielectric layer on the interlayer dielectric layer to fill the hole includes depositing the gate dielectric layer on the interlayer dielectric layer to surround at least some of the vertically integrated multiple nanowire channels which is exposed though the hole.
    Type: Grant
    Filed: February 9, 2017
    Date of Patent: May 26, 2020
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Yang-Kyu Choi, Byung-Hyun Lee, Min-Ho Kang
  • Patent number: 10664589
    Abstract: A memory alignment randomization method of a memory heap exploit is provided, memory alignment of objects inside a heap area is randomly performed to mitigate the exploits of the vulnerability of the software memory heap area The heap exploit is powerfully mitigated by aligning randomly obtained memory addresses instead of aligning memory addresses at multiples of 4 or 8 when the memory alignment for the objects inside the heap area.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: May 26, 2020
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Brent ByungHoon Kang, Daehee Jang, Minsu Kim, Jonghwan Kim, Daegyeong Kim, Hojoon Lee
  • Patent number: 10667186
    Abstract: A method of assigning and managing reference signals in a multi-cell environment, and a network device and a terminal for applying the method, are provided. Reference signal patterns may be assigned to multiple femtocells through a long term coordination of a central control unit that is used to control multiple cells.
    Type: Grant
    Filed: August 27, 2018
    Date of Patent: May 26, 2020
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Won Jae Shin, Young Jun Hong, Chang Yong Shin, Yong Ho Cho, Dong Jo Park, Jung Hyun Park
  • Publication number: 20200155011
    Abstract: A method for measuring a high-accuracy and real-time heart rate based on a continuous-wave radar is provided. The method includes receiving an in-phase (I) signal and a quadrature (Q) signal for a receive signal received through the continuous-wave radar, selecting any one signal by comparing magnitudes of the received I signal and the received Q signal, performing frequency transform of each of bases respectively having predetermined phases with respect to the any one selected signal, and determining a heart rate based on a magnitude response of each of the bases by the frequency transform.
    Type: Application
    Filed: September 20, 2019
    Publication date: May 21, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Seong Ook PARK, Junhyeong PARK
  • Publication number: 20200161873
    Abstract: Disclosed herein are a wireless power transmission method and device in which rectifier performance of an Internet of things (IOT) sensor is taken into consideration. The method and device may be configured to identify rectifier performance of each of a plurality of IOT sensors, determine power to be transmitted to each of the IOT sensors based on a value for enabling power, output by the rectifier, to reach a predetermined maximum value based on the rectifier performance, and transmit the power to each of the IOT sensors in the form of electromagnetic waves.
    Type: Application
    Filed: August 26, 2019
    Publication date: May 21, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: JunKyun Choi, Jaeseob Han, Sangdon Park
  • Publication number: 20200161096
    Abstract: Provided are a plasma generating apparatus and a substrate treating apparatus. The plasma generating apparatus includes a plurality of ground electrodes arranged inside a vacuum container and extending parallel to each other and power electrodes arranged between the ground electrodes. An area where a distance between the ground electrode and the power electrode is constant exists, and the power electrodes are tapered in a direction facing the substrate. The power electrodes are connected to an RF power source, and height of the power electrode is greater than that of the ground electrode in the direction facing the substrate.
    Type: Application
    Filed: November 19, 2019
    Publication date: May 21, 2020
    Applicants: Jusung Engineering Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Hong-Young CHANG, Sang-Hun Seo, Yun-Seong Lee
  • Publication number: 20200160212
    Abstract: Disclosed are a method and system for transfer learning to a random target dataset and model structure based on meta learning. A transfer learning method may include determining the form and amount of information to be transferred, used by a pre-trained model, using a meta model based on similarity between a source dataset and a new target dataset and performing transfer-learning on a target model using the form and amount of information of the pre-trained model determined by the meta model.
    Type: Application
    Filed: December 10, 2018
    Publication date: May 21, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Jinwoo Shin, Sung Ju Hwang, Yunhun Jang
  • Patent number: 10657655
    Abstract: A VR content sickness evaluating apparatus using a deep learning analysis of a motion mismatch and a method thereof are provided. The VR content sickness evaluating apparatus analyzes a motion mismatch phenomenon between visual recognition information and posture recognition information, which occurs when a user views VR content, using deep learning and predicts and evaluates a degree of VR sickness from a difference between motion features.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: May 19, 2020
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: YongMan Ro, Hak Gu Kim