Abstract: Various semiconductor chip metallization layers and methods of manufacturing the same are disclosed. In aspect, a semiconductor chip is provided that includes a substrate, plural metallization layers on the substrate, a first conductor line in one of the metallization layers and a second conductor line in the one of the metallization layers in spaced apart relation to the first conductor line, each of the first conductor line and the second conductor line has a first line portion and a second line portion stacked on the first line portion, and a dielectric layer that has a portion positioned between the first conductor line and a second line, the portion has an air gap.

Abstract: In some examples, thermal aware optimization logic determines a characteristic (e.g., a workload or type) of a wavefront (e.g., multiple threads). For example, the characteristic indicates whether the wavefront is compute intensive, memory intensive, mixed, and/or another type of wavefront. The thermal aware optimization logic determines temperature information for one or more compute units (CUs) in one or more processing cores. The temperature information includes predictive thermal information indicating expected temperatures corresponding to the one or more CUs and historical thermal information indicating current or past thermal temperatures of at least a portion of a graphics processing unit (GPU). The logic selects the one or more compute units to process the plurality of threads based on the determined characteristic and the temperature information. The logic provides instructions to the selected subset of the plurality of CUs to execute the wavefront.

Abstract: Dynamically coalescing atomic memory operations for memory-local computing is disclosed. In an embodiment, it is determined whether a first atomic memory access and a second atomic memory access are candidates for coalescing. In response to a triggering event, the atomic memory accesses that are candidates for coalescing are coalesced in a cache prior to requesting memory-local processing by a memory-local compute unit. The atomic memory accesses may be coalesced in the same cache line or atomic memory accesses in different cache lines may be coalesced using a multicast memory-local processing command.

Abstract: Hardware-assisted Dynamic Random Access Memory (DRAM) row merging, including: identifying, by a memory controller, in a DRAM module, a plurality of rows storing identical data; storing, in a mapping table, data mapping one or more rows of the plurality of rows to another row; and excluding the one or more rows from a refresh the DRAM module.

Abstract: An apparatus and method for managing packet transfer between a memory fabric having a physical layer interface higher data rate than a data rate of a physical layer interface of another device, receives incoming packets from the memory fabric physical layer interface wherein at least some of the packets include different instruction types. The apparatus and method determine a packet type of the incoming packet received from the memory fabric physical layer interface and when the determined incoming packet type is of a type containing an atomic request, the method and apparatus prioritizes transfer of the incoming packet with the atomic request over other packet types of incoming packets, to memory access logic that accesses local memory within an apparatus.

Abstract: Automatic memory overclocking, including: increasing a memory frequency setting for a memory module until a memory stability test fails; determining an overclocked memory frequency setting including a highest memory frequency setting passing the memory stability test; and generating a profile including the overclocked memory frequency setting.

Abstract: Various semiconductor chip devices and methods of making the same are disclosed. In one aspect, an apparatus is provided that includes a first redistribution layer (RDL) structure having a first plurality of conductor traces, a first molding layer on the first RDL structure, plural conductive pillars in the first molding layer, each of the conductive pillars including a first end and a second end, a second RDL structure on the first molding layer, the second RDL structure having a second plurality of conductor traces, and wherein some of the conductive pillars are electrically connected between some of the first plurality of conductor traces and some of the second plurality of conductor traces to provide a first inductor coil.

Abstract: A semiconductor package includes a first mold layer at least partially encasing at least one photonic integrated circuit. A redistribution layer structure is fabricated on the first mold layer, the redistribution layer structure including dielectric material and conductive structures. A second mold layer at least partially encasing at least one semiconductor chip is fabricated on the redistribution layer structure. The redistribution layer structure provides electrical pathways between the at least one semiconductor chip and the at least one photonic integrated circuit. One or more voids are defined in the second mold layer in an area above an optical interface of the at least one photonic integrated circuit such that light is transmittable through dielectric material above the optical interface.

Abstract: Still frame detection for single pass video data, including: determining that an average quantization parameter of a frame of video data falls below a quantization parameter threshold; determining whether an amount of skipped macroblocks in the frame meets a skipped macroblock threshold; and responsive to the amount of skipped macroblocks exceeding the skipped macroblock threshold, identifying the frame as a still frame.

Abstract: Machine learning-based multi-view video conferencing from single view video data, including: identifying, in video data, a plurality of objects; and generating a user interface comprising a plurality of first user interface elements each comprising a portion of the video data corresponding to one or more of the plurality of objects.

Abstract: A method and apparatus provide recovery from a computing device boot up error by detecting a current boot up error in the computing device, loading a plurality of recovery pre-EFI initialization modules (PEIMs), of a recovery unified extensible firmware interface (UEFI) BIOS for execution, wherein the recovery PEIMS include executable code to pre-initialize at least a processing unit and memory of the computing device in a pre-EFI initialization (PEI) phase of a multi-phase platform initialization operation, and recovering from the boot up error by booting up the computing device using the loaded plurality of recovery pre-EFI initialization modules.

Abstract: A bi-directional Gray code counter includes a first set of logic circuitry configured to receive an input having a first sequence of bits representing a first value. The first set of logic circuitry is further configured to convert the first sequence of bits to a second sequence of bits representing the first value. The bi-directional Gray code counter further includes a second set of logic circuitry and third second set of logic circuitry. The second set of logic circuitry is configured to compare the second sequence of bits to a bit index pattern. The third set of logic circuitry is configured to transition one bit in the first sequence of bits from a first state to a second state to form a third sequence of bits representing a second value. The one bit is transitioned in response to the second sequence of bits being compared to the bit index pattern.

Abstract: Correcting engagement of a user in a video conference includes: receiving video data of a user of a participant device of a video conference; determining that one or more visual characteristics of the video data satisfy one or more criteria; and displaying, by the participant device, a visual overlay in response to the one or more criteria being satisfied.

Abstract: A method and apparatus for scrambling and descrambling data in a computer system includes transmitting non-scrambled data from a first high speed inter chip (IP) link circuit located on a first chip to a first serializer/deserializer (SERDES) physical (PHY) circuit located on the first chip, the first high speed link IP indicating the data is not scrambled. The received non-scrambled data is scrambled by the first SERDES PHY circuit and transmitted to a second chip. The received scrambled data is descrambled by a second SERDES PHY circuit located on the second chip. The non-scrambled data is transmitted by the second SERDES PHY circuit to a second high speed link IP circuit located on the second chip to a third circuit for further processing or transmission.

Abstract: Detecting execution hazards in offloaded operations is disclosed. A second offload operation is compared to a first offload operation that precedes the second offload operation. It is determined whether the second offload operation creates an execution hazard on an offload target device based on the comparison of the second offload operation to the first offload operation. If the execution hazard is detected, an error handling operation may be performed. In some examples, the offload operations are processing-in-memory operations.

Abstract: Various semiconductor chips and packages are disclosed. In one aspect, an apparatus is provided that includes a semiconductor chip that has a side, and plural conductive pillars on the side. Each of the conductive pillars includes a pillar portion that has an exposed shoulder facing away from the semiconductor chip. The shoulder provides a wetting surface to attract melted solder. The pillar portion has a first lateral dimension at the shoulder. A solder cap is positioned on the pillar portion. The solder cap has a second lateral dimension smaller than the first lateral dimension.

Abstract: A chip for hybrid bonded interconnect bridging for chiplet integration, the chip comprising: a first chiplet; a second chiplet; an interconnecting die coupled to the first chiplet and the second chiplet through a hybrid bond.

Abstract: Memory operations using compound memory commands, including: receiving, by a memory module, a compound memory command indicating one or more operations to be applied to each portion of a plurality of portions of contiguous memory in the memory module; generating, based on the compound memory command, a plurality of memory commands to apply the one or more operations to each portion of the plurality of portions of contiguous memory; and executing the plurality of memory commands.

Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.

Abstract: An integrated circuit includes a latch array including a plurality of latches logically configured in rows and columns, a plurality of repair latches operatively coupled to the plurality of latches and latch array built in self-test and repair logic (LABISTRL) coupled to the plurality of latches. In some implementations the LABISTRL configures latches in the array as one or more column serial test shift register, detects one or more defective latches of the plurality of latches based on applied test data, and selects at least one repair latch in response to detection of at least one defective latch.