Patents Assigned to Advanced Optoelectronic Technology
  • Patent number: 8648371
    Abstract: An LED unit includes an LED and an electrochromic element mounted on the LED. The LED includes a base, a light emitting die mounted on the base, a pair of leads electrically connected to the die and an encapsulant sealing the die. The encapsulant has a first area and a second area around the first area. The first area contains yellow phosphor therein, and the second area contains red phosphor therein. The electrochromic element has an opening through which the first area of the encapsulant is exposed. The second area of the encapsulant is covered by the electrochromic element. The electrochromic element can change its color when being electrified, thereby changing the color temperature of the light output from the LED unit.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: February 11, 2014
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventor: Te-Wen Kuo
  • Patent number: 8642388
    Abstract: A method for manufacturing LEDs includes following steps: forming circuit structures on a substrate, each circuit structure having a first metal layer and a second metal layer formed on opposite surfaces of the substrate and a connecting section interconnecting the first and second metal layers; cutting through each circuit structure along a middle of the connecting section to form first and second electrical connecting portions insulated from each other via a gap therebetween; arranging LED chips on the substrate and electrically connecting the LED chips to the first and second electrical connecting portions; forming an encapsulation on the substrate to cover the LED chips; and cutting through the substrate and the encapsulation between the first and second electrical connecting portions of neighboring circuit structures to obtain the LEDs.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: February 4, 2014
    Assignee: Advanced Optoelectronics Technology, Inc.
    Inventor: Chao-Hsiung Chang
  • Patent number: 8643022
    Abstract: An LED comprises an electrode layer comprising a first a second sections electrically insulated from each other; an electrically conductive layer on the second section, an electrically conductive pole protruding from the electrically conductive layer; an LED die comprising an electrically insulating substrate on the electrically conductive layer, and a P-N junction on the electrically insulating substrate, the P-N junction comprising a first electrode and a second electrode, the electrically conductive pole extending through the electrically insulating substrate to electrically connect the first electrode to the second section; a transparent electrically conducting layer on the LED die, the transparent electrically conducting layer electrically connecting the second electrode to the first section; and an electrically insulating layer between the LED die, the electrically conductive layer, and the transparent electrically conducting layer, wherein the electrically insulating layer insulates the transparent ele
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: February 4, 2014
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Po-Min Tu, Shih-Cheng Huang, Ya-Wen Lin
  • Patent number: 8633507
    Abstract: An LED includes a base, a first lead and a second lead mounted to the base, a light emitting chip electrically connected to the first lead and the second lead, and an encapsulant sealing the chip. The first lead and the second lead each include a first beam and a second beam connected to each other. Each of the first beam and the second beam has two opposite ends protruding beyond two opposite lateral faces of the base, respectively, for electrically connecting with a circuit board.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: January 21, 2014
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Hsin-Chiang Lin, Pin-Chuan Chen
  • Patent number: 8629534
    Abstract: A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer.
    Type: Grant
    Filed: June 25, 2013
    Date of Patent: January 14, 2014
    Assignee: Advanced Optoelectronics Technology, Inc.
    Inventors: Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Chia-Hung Huang
  • Patent number: 8623678
    Abstract: A method for manufacturing an LED is disclosed. Firstly, a base with two leads is provided. The base has a cavity defined in a top face thereof and two holes defined in two lateral faces thereof. The two holes communicate the cavity with an outside environment. A chip is fixed in the cavity and electrically connected to the two leads. A cover is placed on the top face of the base to cover the cavity. An encapsulation liquid is filled into the cavity through one hole until the encapsulation liquid joins a bottom face of the cover. Finally, the encapsulation liquid is cured to form an encapsulant. A top face of the cover functions as a light emergent face of the LED.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: January 7, 2014
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventor: Chieh-Ling Chang
  • Patent number: 8624389
    Abstract: An LED module includes a plurality of lighting sources each including a substrate, a first and second lead frames arranged on the substrate, an LED chip electrically connected to the first and the second lead frames, and an encapsulation covering the LED chip. The first lead frame of each of the lighting sources connects with the second lead frame of an adjacent lighting source electrically and mechanically.
    Type: Grant
    Filed: June 17, 2011
    Date of Patent: January 7, 2014
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shiun-Wei Chan, Chih-Hsun Ke
  • Patent number: 8604503
    Abstract: A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: December 10, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Chia-Hung Huang, Shih-Cheng Huang, Po-Min Tu, Ya-Wen Lin, Shun-Kuei Yang
  • Patent number: 8597964
    Abstract: A method for manufacturing a plurality of holders each being for an LED package structure includes steps: providing a base, pluralities of through holes being defined in the base to divide the base into a plurality of basic units; etching the base to form a dam at an upper surface of each of the basic units of the base; forming a first electrical portion and a second electrical portion on each basic unit of the base, the first electrical portion and the second electrical portion being separated and insulated from each other by the dam; providing a plurality of reflective cups each on a corresponding basic unit of the base, each of the reflective cups surrounding the corresponding dam; and cutting the base into the plurality of basic units along the through holes to form the plurality of holders.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: December 3, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Chih-Hsun Ke, Ming-Ta Tsai, Chao-Hsiung Chang
  • Patent number: 8592857
    Abstract: An exemplary encapsulation structure for encapsulating an LED chip includes a first encapsulation, a second encapsulation and a transparent resin layer with phosphorous compounds doped therein. The first encapsulation defines a receiving room for receiving the LED chip therein. The second encapsulation defines a receiving space for receiving the first encapsulation therein. The second encapsulation is separated from the first encapsulation to define a clearance between the first encapsulation and the second encapsulation. The transparent resin layer is filled in the clearance. The transparent resin layer has a uniform thickness.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: November 26, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shiun-Wei Chan, Chih-Hsun Ke
  • Patent number: 8587012
    Abstract: The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is disposed on the top of the first substrate to cover the wires and electrodes. A fluorescent layer is disposed on the top of the second substrate to cover the LED chip. The present disclosure also provides a mold and a method of manufacturing the LED package.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: November 19, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shiun-Wei Chan, Chih-Hsun Ke
  • Patent number: 8580590
    Abstract: A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: November 12, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shih-Cheng Huang, Po-Min Tu, Ying-Chao Yeh, Wen-Yu Lin, Peng-Yi Wu, Shih-Hsiung Chan
  • Patent number: 8581117
    Abstract: A plurality of conductive areas is formed on a conductive substrate which includes a frame. Each of the conductive areas includes a lead frame and two electrodes. The frame includes a first side and an opposite second side. The lead frame includes first and second lead frame beams. The first and second lead frame beams extend from the first side toward the second side to connect with the two electrodes. The first and second electrodes extend respectively from the first and second lead frame beams. Each conductive area also includes a supporting portion interconnecting the electrodes and the frame to reinforce the connection between the frame and the conductive area so that the conductive area can sustain a pressure when an insulation shell is injection molded on the conductive area.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: November 12, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Pi-Chiang Hu, Kai-Lun Wang
  • Patent number: 8581283
    Abstract: A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: November 12, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Po-Min Tu, Shih-Cheng Huang, Wen-Yu Lin, Chih-Peng Hsu, Shih-Hsiung Chan
  • Patent number: 8574939
    Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: November 5, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shih Cheng Huang, Po Min Tu, Peng Yi Wu, Wen Yu Lin, Chih Pang Ma, Tzu Chien Hong, Chia Hui Shen
  • Patent number: 8569080
    Abstract: A method of packaging a light emitting diode comprising: providing a flexible substrate with a heat-conducting layer, an insulating layer covering on a surface of the heat-conducting layer and an electrically conductive layer positioned on the insulating layer; etching the conductive layer to form a gap in the conductive layer and expose a part of the insulating layer, the conductive layer being separated by the gap into a first electrode and a second electrode isolated from each other; stamping the flexible substrate with a mold at the position of the gap to form a recess in the flexible substrate; positioning a light emitting element on the conductive layer and electrically connecting the light emitting element to the conductive layer; and forming an encapsulation to cover the light emitting element.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: October 29, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Li-Hsiang Chen, Hsin-Chiang Lin, Pin-Chuan Chen
  • Patent number: 8569781
    Abstract: An LED package comprises a substrate, a reflector, a light-absorbing layer, an encapsulation layer and an LED chip. The light-absorbing layer is located around the reflector and is able to absorb any light which penetrates through the reflector. Therefore, any vignetting or halation of light from the LED package is prevented. Moreover, the LED package can be constructed on a very small scale with no reduction in its color rendering properties.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: October 29, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Pi-Chiang Hu, Shih-Yuan Hsu, Kai-Lun Wang
  • Patent number: 8569779
    Abstract: An exemplary light emitting diode (LED) package includes a substrate, an electrical member formed on the substrate, an LED chip mounted on the substrate and electrically connected to the electrical member, and a heat-dissipating member formed on the electrical member. The heat-dissipating member helps the LED chip to dissipate heat generated thereby when the LED chip is in operation.
    Type: Grant
    Filed: August 15, 2011
    Date of Patent: October 29, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Kai-Lun Wang, Shih-Yuan Hsu, Hou-Te Lin
  • Patent number: 8569789
    Abstract: An LED package includes a substrate, a transparent base, an LED chip and a reflective layer. The substrate has an upper surface. The transparent base is arranged on the upper surface of the substrate. The transparent base includes a first surface away from the substrate and a second surface opposite to the first surface. The LED chip is arranged on the first surface of the transparent base. The reflective layer is arranged between the substrate and the second surface of the transparent base.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: October 29, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Chao-Hsiung Chang, Hou-Te Lin
  • Patent number: D696799
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: December 31, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Chih-Yung Lin, Chia-Chen Chang