Abstract: A package structure includes a base material, at least one electronic device, at least one dummy pillar and an encapsulant. The electronic device is electrically connected to the base material. The dummy pillar is disposed on the base material. The encapsulant covers the electronic device and a top end of the dummy pillar.
Type:
Application
Filed:
August 30, 2019
Publication date:
March 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A package structure includes a base material, at least one electronic device, at least one encapsulant and a plurality of dummy pillars. The electronic device is electrically connected to the base material. The encapsulant covers the electronic device. The dummy pillars are embedded in the encapsulant. At least two of the dummy pillars have different heights.
Type:
Application
Filed:
August 30, 2019
Publication date:
March 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.
Type:
Application
Filed:
August 30, 2019
Publication date:
March 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Inventors:
Ming-Hung CHEN, Yung I. YEH, Chang-Lin YEH, Sheng-Yu CHEN
Abstract: A stacked structure includes a lower structure and an upper structure. The lower structure includes at least one lower dielectric layer and at least one lower metal layer in contact with the lower dielectric layer. The upper structure includes at least one upper dielectric layer and at least one upper metal layer in contact with the upper dielectric layer. The upper dielectric layer includes a first upper dielectric layer attached to the lower structure. The first upper dielectric layer includes a first portion and a second portion. A difference between a thickness of the first portion and a thickness of the second portion is greater than a gap between a highest point of a top surface of the first upper dielectric layer and lowest point of the top surface of the first upper dielectric layer.
Type:
Application
Filed:
August 30, 2019
Publication date:
March 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor device package includes a first passive component having a first surface and a second passive component having a second surface facing the first surface of the first passive component. The first surface has a recessing portion and the second surface includes a protruding portion within the recessing portion of the first surface of the first passive component. A contour of the protruding portion and a contour of the recessing portion are substantially matched. A method of manufacturing a semiconductor device package is also disclosed.
Type:
Application
Filed:
August 26, 2019
Publication date:
March 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A stacked structure includes a lower structure, an upper structure and a buffer layer. The lower structure includes at least one lower dielectric layer and at least one lower metal layer in contact with the lower dielectric layer. The upper structure includes at least one upper dielectric layer and at least one upper metal layer in contact with the upper dielectric layer. The buffer layer is interposed between the lower structure and the upper structure. A coefficient of thermal expansion (CTE) of the buffer layer is between a coefficient of thermal expansion (CTE) of the lower structure and a coefficient of thermal expansion (CTE) of the upper structure.
Type:
Application
Filed:
August 30, 2019
Publication date:
March 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor package device includes a wiring structure, a semiconductor chip and an encapsulant. The semiconductor chip is electrically connected to the wiring structure. The encapsulant is disposed on the wiring structure and covers the semiconductor chip. A roughness (Ra) of a surface of the encapsulant is about 5 nm to about 50 nm.
Type:
Application
Filed:
August 21, 2019
Publication date:
February 25, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.
Type:
Application
Filed:
August 23, 2019
Publication date:
February 25, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor device package includes a first substrate, a dielectric layer, a thin film transistor (TFT) and an electronic component. The first substrate has a first surface and a second surface opposite to the first surface. The dielectric layer is disposed on the first surface of the first substrate. The dielectric layer has a first surface facing away from the first substrate and a second surface opposite to the first surface. The TFT layer is disposed on the dielectric layer. The electronic component is disposed on the second surface of the first substrate. A roughness of the first surface of the dielectric layer is less than a roughness of the first surface of the first substrate.
Type:
Application
Filed:
August 23, 2019
Publication date:
February 25, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor device package includes a substrate, a first antenna and a second antenna. The substrate has a first surface and a second surface opposite to the first surface. The first antenna pattern is disposed over the first surface of the substrate. The first antenna pattern has a first bandwidth. The first antenna pattern has a first port configured to generate a magnetic field. The second antenna pattern is disposed over the first surface of the substrate. The second antenna pattern has a second bandwidth different from the first bandwidth. A prolonged line of an edge of the first antenna pattern parallel to the magnetic field generated by the first port of the first antenna pattern is spaced apart from the second antenna pattern.
Type:
Application
Filed:
August 12, 2019
Publication date:
February 18, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Inventors:
Shao-En HSU, Huei-Shyong CHO, Shih-Wen LU
Abstract: The present disclosure provides a semiconductor package structure having a semiconductor die having an active surface, a conductive bump on the active surface, configured to electrically couple the semiconductor die to an external circuit, the conductive bump having a bump height, a dielectric encapsulating the semiconductor die and the conductive bump, and a plurality of fillers in the dielectric, each of the fillers comprising a diameter, wherein a maximum diameter of the fillers is smaller than the bump height.
Type:
Application
Filed:
August 14, 2019
Publication date:
February 18, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor device package includes a substrate, a first patterned conductive layer, a second patterned conductive layer, a dielectric layer, a third patterned conductive layer and a connector. The substrate has a top surface. The first patterned conductive layer is on the top surface of the substrate. The second patterned conductive layer contacts the first patterned conductive layer. The second patterned conductive layer includes a first portion, a second portion and a third portion. The second portion is connected between the first portion and the third portion. The dielectric layer is on the top surface of the substrate. The dielectric layer covers the first patterned conductive layer and surrounds the second portion and the third portion of the second patterned conductive layer. The first portion of the second patterned conductive layer is disposed on the dielectric layer.
Type:
Application
Filed:
October 28, 2020
Publication date:
February 11, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor package structure includes a substrate, a first semiconductor die, a first dielectric, a second semiconductor die, and a second dielectric. The substrate has a first surface. The first semiconductor die is disposed on the first surface. The first dielectric encapsulates the first semiconductor die. The second semiconductor die is disposed on the first surface and adjacent to the first semiconductor die. The second dielectric encapsulates the second semiconductor die. The first dielectric is in contact with the second dielectric. An average filler size in the first dielectric is substantially greater than an average filler size in the second dielectric.
Type:
Application
Filed:
August 6, 2019
Publication date:
February 11, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor device package includes a carrier, a first interposer disposed and a second interposer. The second interposer is stacked on the first interposer, and the first interposer is mounted to the carrier. The combination of the first interposer and the second interposer is substantially T-shaped.
Type:
Application
Filed:
August 9, 2019
Publication date:
February 11, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A package structure includes a plurality of lower elements, a reinforcement structure and an encapsulant. The lower elements are disposed side by side. The reinforcement structure surrounds the lower elements. The encapsulant covers the lower elements and the reinforcement structure. The electrical connectors of the lower elements are exposed from the encapsulant.
Type:
Application
Filed:
July 31, 2019
Publication date:
February 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor device package includes a first semiconductor device, a first redistribution layer (RDL) structure and a second RDL structure. The first semiconductor device has a first conductive terminal and a second conductive terminal. The first RDL structure covers the first conductive terminal. The second RDL structure covers the second conductive terminal and being separated from the first RDL structure.
Type:
Application
Filed:
August 1, 2019
Publication date:
February 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor device package includes a magnetically permeable layer having a top surface and a bottom surface opposite to the top surface. The semiconductor device package further includes a first conductive element in the magnetically permeable layer. The semiconductor device package further includes a first conductive via extending from the top surface of the magnetically permeable layer into the magnetically permeable layer to be electrically connected to the first conductive element. The first conductive via is separated from the magnetically permeable layer. A method of manufacturing a semiconductor device package is also disclosed.
Type:
Application
Filed:
July 31, 2019
Publication date:
February 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor package structure includes an organic substrate having a first surface, a first recess depressed from the first surface, a first chip over the first surface and covering the first recess, thereby defining a first cavity enclosed by a back surface of the first chip and the first recess, and a second chip over the first chip. The first cavity is an air cavity or a vacuum cavity.
Type:
Application
Filed:
October 19, 2020
Publication date:
February 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Abstract: A semiconductor device package includes a conductive layer, a first conductive pillar, a circuit layer and a second conductive pillar. The conductive layer has a first surface. The first conductive pillar is disposed on the first surface of the conductive layer. The circuit layer is disposed over the conductive layer. The circuit layer has a first surface facing the conductive layer. The second conductive pillar is disposed on the first surface of the circuit layer. The first conductive pillar is physically spaced apart from the second conductive pillar and electrically connected to the second conductive pillar.
Type:
Application
Filed:
July 31, 2019
Publication date:
February 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.
Inventors:
Min Lung HUANG, Hung-Jung TU, Hsin Hsiang WANG
Abstract: An optical communication package structure includes a wiring structure, at least one via structure, a redistribution structure, at least one optical device and at least one electrical device. The wiring structure includes a main portion and a conductive structure disposed on an upper surface of the main portion. The main portion defines at least one through hole extending through the main portion. The via structure is disposed in the at least one through hole of the main portion and electrically connected to the conductive structure. The redistribution structure is disposed on a lower surface of the main portion and electrically connected to the via structure. The optical device is disposed adjacent to the upper surface of the main portion and electrically connected to the conductive structure. The electrical device is disposed on and electrically connected to the conductive structure.
Type:
Application
Filed:
July 31, 2019
Publication date:
February 4, 2021
Applicant:
Advanced Semiconductor Engineering, Inc.