Abstract: The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15?) of the cavity is provided to expose the cavity to the environment.

Abstract: A signal conditioning circuit for a light sensor, in particular for an ambient light sensor, comprises a first integration stage (INT1) connected to a first sensor input (IN1) to receive a first and second sensor signal and a second integration stage (INT2) comprising a coupling input (IN2) to receive from the first integration stage (INT1) a first and second integrated sensor signal. A coupling stage (S3, C5) is connecting the first and second integration stages (INT1, INT2) and is designed to generate a difference signal from consecutively received integrated first and second integrated sensor signals. A sensor arrangement and a method for signal conditioning for a light sensor is also presented.

Abstract: A sensor amplifier arrangement includes an amplifier having a signal input to receive a sensor signal and a signal output, and a feedback path that couples the signal output to the signal input, wherein the feedback path includes an anti-parallel circuit of diodes, and a voltage divider including a first and a second divider resistor and a voltage divider tap between the first and the second divider resistor, wherein the voltage divider couples the signal output to a reference potential terminal, and the voltage divider tap is coupled to the anti-parallel circuit of diodes and the anti-parallel circuit of diodes is coupled to the signal input.

Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

Abstract: A wireless power receiver (11) comprises an antenna (13), a capacitor (14) having a first terminal permanently connected to a first terminal (16) of the antenna (13) and a second terminal permanently connected to a second terminal (17) of the antenna (13), a first charge switch (18), a rectifier (15) having a first input (19) coupled to the antenna (13) via the first charge switch (18) and having a first output (22), and a communicator unit (35) with a first terminal coupled to the antenna (13).

Abstract: An optical sensor arrangement comprises an optical barrier which is placed between a light-emitting device and a photodetector. Herein the light-emitting device and the photodetector are arranged on a first plane and are covered by a cover. The photodetector exhibits an active zone. The optical barrier exhibits an extent along a first principal axis, which is pointing parallel to the line connecting the centers of the light-emitting device and the photodetector. Herein the extent is greater than a dimension of the active zone. The optical barrier is designed to block light emitted by the light-emitting device that otherwise would be reflected by the cover by means of specular reflection and would reach the photodetector. The optical barrier is designed to pass light emitted by the light-emitting device and scattered on or above an outer surface of the cover.

Abstract: A semiconductor device has a semiconductor substrate and a first metallization stack arranged on the substrate. The substrate has and/or carries a plurality of electronic circuit elements. The first metallization stack has electrically insulating layers and at least one metallization layer. The semiconductor device further has a second metallization stack arranged on the first metallization stack and comprising further electrically insulating layers and an optical waveguide layer. The optical waveguide layer has at least one optical waveguide structure. Furthermore, one of the electrically insulating layers and one of the further electrically insulating layers are in direct contact with each other and form a pair of directly bonded layers.

Abstract: An integrated current sensor system has a printed circuit board with a magnetic field sensor with a sensor interface. The printed circuit board has a first side on which, isolated from the printed circuit board, a first current conductor is arranged with a longitudinal edge of a portion of the first current conductor being proximate to a sensitive area of sensor. The circuit board has a second side on which a second current conductor is, isolated from the printed circuit board, arranged, wherein a longitudinal edge of a portion of the second current conductor is arranged proximate to the sensitive area. The first and the second current conductor are electrically connected with at least one conductive via.

Abstract: A microphone assembly includes a capacitive MEMS transducer and a bias circuit having a DC output coupled to the transducer. The microphone assembly also includes a differential amplifier having a first input coupled to a first output of the transducer, the differential amplifier having a second input coupled to a second output of the transducer. The microphone assembly further includes a first impedance matching network and a second impedance matching network configured to balance a first capacitive load at the first input of the amplifier and a second capacitive load at the second input of the amplifier. Electrical signals applied by the transducer to the first and second inputs of the amplifier are matched or approximately matched in magnitude and 180 degrees or approximately 180 degrees out of phase with respect to each other.

Abstract: The semiconductor image sensor comprises a plurality of pixels (1) with photo sensors (2). At least one heater (4) is integrated with the photo sensors and is arranged in at least one of the pixels or in the vicinity of at least one of the pixels. An appropriate operation of the heater will increase the temperature of the relevant pixel. Thus it is possible to achieve a local compensation of a temperature difference that may be due to the operation of an integrated readout circuit (3) or any other integrated component generating heat.

Abstract: A method for passive optical motion detection uses an optical sensor arrangement comprising an optical sensor having at least one signal channel. The optical sensor arrangement is initialized for repeated signal acquisition and an initial frame comprising a tuple of sensor data is collected from the at least one signal channel. The initial frame is set as a previous frame. A loop of motion detection is entered and the following steps are repeated. First, a current frame comprising another tuple of sensor data is collected from the at least one signal channel. Then, a motion parameter is computed from a motion metric depending on the current and previous frames. The so computed motion parameter is compared with a threshold value. A motion event parameter is set depending on the comparison of the motion parameter with the threshold value. The current frame is set as previous frame so that the loop can start all over again.

Abstract: A transceiver circuit with a front-end and a back-end is provided. The front-end has terminals for coupling to a first and a second capacitor and tunable resistors coupled between the terminals and a reference terminal. The front-end is configured to receive receiver signals at the terminals utilizing a first setting for the resistors. The front-end is configured to generate a receiver data packet based on the receiver signals. The back-end is configured to check the receiver data packet for errors with respect to a defined tuning data packet. If an error is found, the back-end sets the resistors to a default setting. If no errors are found, the back-end sets the resistors to a second setting.

Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

Abstract: A set of headphones includes a connector with a first connection contact and a second connection contact as well as a loudspeaker, which is connected to the first connection contact in order to supply a loudspeaker signal. The set of headphones also includes a first and a second digital microphone, each of which is set up to generate a digital microphone signal, in particular with a binary bit stream. A multiplexer, which is coupled, at an output, to the second connection contact, is set up to generate a coded multiplex signal at the output on the basis of the microphone signals.

Abstract: An optical package is proposed comprising a carrier, an optoelectronic component, an aspheric lens, and a reflective layer. The carrier comprises electrical interconnections and the optoelectric component is arranged for emitting and/or detecting electromagnetic radiation in a specified wavelength range. Furthermore, the optoelectric component is mounted on the carrier or integrated into the carrier and electrically connected to the electric interconnections. The aspheric lens has an upper surface, a lateral surface, and a bottom surface and the bottom surface is arranged on or near the optoelectric component. The aspheric lens comprises a material which is at least transparent in the specified wavelength range. The reflective layer comprises a reflective material, wherein the reflective layer at least partly covers the lateral surface of the aspheric lens, and wherein the reflective material is at least partly reflective in the specified wavelength range.

Abstract: A circuit arrangement for clock and data recovery comprises a control unit, a phase-locked loop circuit and a sampling unit. The control unit is configured to derive a first reference signal and a second reference signal from an input signal. Furthermore, the control unit is configured to derive a common reference signal from one of the first reference signal and the second reference signal, selected depending on a mode of operation of the circuit arrangement. The phase-locked loop circuit is configured to generate an oscillator signal based on the common reference signal. The sampling unit is configured to extract a recovered data signal from the input signal.

Abstract: A control system for a gesture sensing arrangement with at least one sensor operates the sensor in a proximity mode. The control system receives data sets generated by the sensor and based on these data sets determines whether an object is present in a vicinity of the sensor. When an object is detected in the vicinity the control system operates the sensor in a gesture mode. Based on further data generated by the sensor the control system determines an end of a gesture, and operates the sensor in the proximity mode.

Abstract: In one embodiment a power conversion arrangement comprises a switching converter (DC) with an input which is supplied with an input voltage (Vin) and a first output (Out1) to provide a first output voltage (Vout1) as a function of the input voltage (Vin), a linear regulator (LDO1) with an input coupled to the first output (Out1) of the switching converter (DC), the linear regulator (LDO1) having a second output (Out2) to provide a second output voltage (Vout2) as a function of the first output voltage (Vout1) to a connectable electrical load (CS), a component for sensing (MSI) a load current (Iload) at the second output (Out2) of the linear regulator (LDO1), the component being connected to the second output (Out2) of the linear regulator (LDO1), and a unit for influencing (MVA) the first output voltage (Vout1) as a function of the load current (Iload), the unit (MVA) being connected to the first output (Out1) of the switching converter (DC) and to the component for sensing (MSI) the load current (Iload).

Abstract: A sensor (2) is arranged at a main surface (10) of a semiconductor substrate (1), and a filter (3) is arranged above the sensor. A through-substrate via (4) penetrates the substrate outside the region of the sensor. A semiconductor body is applied above the main surface and then partially removed at least in an area above the sensor. A portion of the semiconductor body remains above the through-substrate via as a frame layer (5). The filter is on a level with the frame layer.

Abstract: A color sensor arrangement comprises a color sensor arranged to generate at least a first channel signal being indicative of a color of light incident on the color sensor. A processing unit is connected to the color sensor and arranged to generate a tuple of color signals by processing the at least first channel signal. A memory is connected to the processing unit and a control unit is connected to the processing unit and to the memory. Furthermore, the control unit is arranged to receive calibration data relating the tuple of color signals to a calibrated tuple of color signals and arranged to store said calibration data (M) by means of the memory. An interface is connected to the processing unit and comprises an interface terminal.