Abstract: The PLL circuit comprises a phase/frequency detector (302), a loop filter (304, 306), a VCO (308) and a feedback loop (320). The VCO can be electrically disconnected from the PLL and comprises a programmable trimming circuit (316) and a current-controlled oscillator (318). For calibration the VCO is electrically disconnected from the loop filter and from the feedback loop, a constant reference voltage is applied to the voltage input (IN), a center frequency programming code (L) is applied to the trimming circuit, the center frequency programming code is iteratively adjusted until a desired center frequency is obtained, a gain programming code (K) is applied to the trimming circuit while the adjusted code is still applied, and the gain programming code is iteratively adjusted until a desired gain is obtained. Then the VCO is connected to the PLL, which is then ready for normal operation.
Abstract: The sensor semiconductor device comprises a substrate (1) with a main surface (2), a sensor region (3) on or above the main surface, a coating layer (4) above the main surface, and a trench (5) formed in the coating layer around the sensor region. The trench provides drainage of a liquid from the coating layer.
Type:
Grant
Filed:
October 14, 2016
Date of Patent:
November 12, 2019
Assignee:
ams AG
Inventors:
Nebojsa Nenadovic, Agata Sakic, Micha In't Zandt, Frederik Willem Maurits Vanhelmont, Hilco Suy, Roel Daamen
Abstract: An optical hybrid lens comprises a substrate having a first surface and a second surface opposite the first surface. A sub-wavelength grating lens is disposed on the first surface and comprises a plurality of posts. The plurality of posts is arranged on the first surface and the posts extend from the first surface. A refractive lens is arranged on the sub-wavelength grating lens at least partly enclosing the plurality of posts. Alternatively, the refractive lens is arranged on the second surface.
Abstract: A protective circuit (10) comprises a terminal (11), a reference potential terminal (12) and a protective structure (13) that is arranged between the terminal (11) and the reference potential terminal (12), and is designed to be conductive in the event of an electrostatic discharge. The protective circuit (10) furthermore comprises a voltage supply circuit (14) that is coupled to a control input (16) of the protective structure (13) with its output side and is designed for delivering, in the event of radiofrequency interference, a control signal (ST) to the control input (16) with such a high voltage value that conduction of the protective structure (13) is prevented.
Type:
Application
Filed:
July 15, 2019
Publication date:
November 7, 2019
Applicant:
ams AG
Inventors:
Wolfgang REINPRECHT, Christian STOCKREITER, Bernhard WEISS
Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.
Type:
Grant
Filed:
December 12, 2014
Date of Patent:
November 5, 2019
Assignee:
ams AG
Inventors:
Franz Schrank, Sara Carniello, Hubert Enichlmair, Jochen Kraft, Bernhard Loeffler, Rainer Holzhaider
Abstract: An embodiment of a method for compensating variations in an attenuation of light of an optical filter of a light sensor system comprises illuminating a clear sensor and a color sensor of the light sensor system with a test light having a test spectrum. Therein the color sensor comprises the optical filter and is designed to predominantly sense light with a wavelength within a pass band of the filter; and the test spectrum has components outside the pass band. A clear test signal generated by the clear sensor and a color test signal generated by the color sensor are received in particular in response to the illumination with the test light. Then a first transmission value T is determined based on the clear test signal and on the color test signal. Finally, a compensation factor Kr, Kg, Kb is calculated to compensate the variations in the attenuation of light based on the first transmission value T and a nominal transmission value Tn of the filter.
Abstract: A photodiode array is disclosed and comprises a first photodiode comprising a first set of spatially separate and electrically interconnected photodiode segments. A second photodiode comprises a second set of spatially separate and electrically interconnected photodiode segments. A first group of photodiode segments comprises photodiode segments from the first and/or second set of photodiode segments. The photodiode segments from the first group of photodiode segments are radially arranged around a common center of symmetry in a common first distance with respect to the common center of symmetry. A second group of photodiode segments comprises photodiode segments from the first and/or second set of photodiode segments. Photodiode segments from the second group of photodiode segments are radially arranged around the common center of symmetry in a second common distance with respect to the common center of symmetry, wherein the first distance is different from the second distance.
Abstract: An integrated optical sensor comprises a semiconductor substrate (1), an integrated circuit (2), a dielectric layer (6), a wiring (4), a structured filter layer (7) and a diffuser (10). The semiconductor substrate (1) has a main surface (11) and the integrated circuit (2) is arranged in the substrate (1) at or near the main surface (11). Furthermore, the integrated circuit (2) comprises at least one light sensitive component (3). The dielectric layer (6) comprises at least one compound of the semiconductor material. The dielectric layer (6) is arranged on or above the main surface (11). The wiring (4) is arranged in the dielectric layer (6) and provides an electrical connection to the integrated circuit (2), i.e. the wiring is connected to the integrated circuit (2). The structured filter layer (7) is arranged on the dielectric layer (6) and faces the at least one light sensitive component (3), i.e. the diffusor (10) is positioned over the structured filter layer (7).
Abstract: A position sensor device comprises at least two Hall elements (11, 12) and a signal evaluation circuit (14) that is coupled on its input side to the at least two Hall elements (11, 12) and is designed to provide a digital position signal (ANS). Moreover, the position sensor device (10) comprises a processing unit (15) comprising a loop filter (16) that is coupled on its input side to the signal evaluation unit (14). The processing unit (15) is designed to adaptively control a filter parameter of the loop filter (16) during operation.
Type:
Grant
Filed:
January 13, 2017
Date of Patent:
October 1, 2019
Assignee:
ams AG
Inventors:
Kurt Riedmueller, Gerhard Oberhoffner, Dominik Ruck, Stephan Michelitsch
Abstract: A level shift regulator circuit comprises a level shift transistor (Mls) and an output transistor (Mreg) being arranged in series to the level shift transistor (Mls) in an output path (OP). The circuit comprises a feedback path (FP) being arranged between an input node (IN) of the output path (OP) and a gate connection of the output transistor (Mreg). A current splitter (CS) is provided to split a current of a current source (IS0) coupled to the input node (IN) to reduce the loop gain. A current mirror (CM) is arranged in series to the current splitter (CS) to reduce the signal current provided by the current splitter (CS) to the gate connection of the output transistor (Mreg) to further reduce the gain and to improve stability of the circuit. A first and second filter (F1, F2) may optionally be provided to improve the phase response.
Abstract: The arrangement comprises a filter region (10) filtering electromagnetic radiation and a shielding component (20) inhibiting propagation of electromagnetic radiation. The filter region comprises a central filter region (11) and a separate peripheral filter region (13). The shielding component comprises an aperture (21). The aperture is arranged above the central filter region. The central filter region and the peripheral filter region are optimized for different angles of incidence (?, ?) and provided for measurements by individual sensor regions (18, 19).
Abstract: A biometric sensor arrangement (10) comprises a first radiation source (11), a second radiation source (12) that is implemented as a flash radiation source and a driver (13) coupled to the first and the second radiation source (11, 12) and configured to selectively operate the first and the second radiation source (11, 12). Moreover, the biometric sensor arrangement (10) comprises a photosensor (16) and a signal conditioning unit (18) coupled to the photosensor (16) and designed to provide a biometric signal (SB).
Abstract: A protective circuit (10) comprises a terminal (11), a reference potential terminal (12) and a protective structure (13) that is arranged between the terminal (11) and the reference potential terminal (12), and is designed to be conductive in the event of an electrostatic discharge. The protective circuit (10) furthermore comprises a voltage supply circuit (14) that is coupled to a control input (16) of the protective structure (13) with its output side and is designed for delivering, in the event of radiofrequency interference, a control signal (ST) to the control input (16) with such a high voltage value that conduction of the protective structure (13) is prevented.
Type:
Grant
Filed:
May 8, 2017
Date of Patent:
September 3, 2019
Assignee:
ams AG
Inventors:
Wolfgang Reinprecht, Christian Stockreiter, Bernhard Weiss
Abstract: A package for an optical sensor, comprises an optically opaque enclosure for forming a cavity when mounted onto a substrate and an optical element based on an optically translucent polymer. An aperture in the enclosure is designed to attach the optical element to the enclosure.
Type:
Grant
Filed:
June 25, 2014
Date of Patent:
August 27, 2019
Assignee:
ams AG
Inventors:
Arnold Umali, Harald Etschmaier, Guenter Aflenzer
Abstract: Color light sensors are used to sense colored light and a full spectrum light in order to generate at least three color channel signals and a clear channel signal. An infrared component IR is calculated by summing up the color channel signals with individual weighting factors and subtracting a weighted clear channel signal.
Abstract: A sensor arrangement comprises at least a first, a second, and a third light sensor. A three-dimensional framework comprises at least a first, a second, and a third connection means which are connected to the at least first, second, and third light sensor, respectively. The first, the second, and the third connection means are configured to align the at least first, second, and third light sensor along a first, second, and third face of a polyhedron-like volume, respectively, such that the sensor arrangement encloses the polyhedron-like volume. The invention also relates to a method for operating the sensor arrangement.
Abstract: A photodiode array is disclosed and comprises a first photodiode comprising a first set of spatially separate and electrically interconnected photodiode segments. A second photodiode comprises a second set of spatially separate and electrically interconnected photodiode segments. A first group of photodiode segments comprises photodiode segments from the first and/or second set of photodiode segments. The photodiode segments from the first group of photodiode segments are radially arranged around a common center of symmetry in a common first distance with respect to the common center of symmetry. A second group of photodiode segments comprises photodiode segments from the first and/or second set of photodiode segments. Photodiode segments from the second group of photodiode segments are radially arranged around the common center of symmetry in a second common distance with respect to the common center of symmetry, wherein the first distance is different from the second distance.
Abstract: An RFID transponder (T) suitable for communication with a reading device (RD) and adapted to be connected to a monitored unit (MU) is provided. The RFID transponder (T) comprises a comparing unit (CU) adapted to and arranged to receive a status signal from the monitored unit (MU) and configured to compare a value of the status signal to at least one predefined reference value and a state machine circuit (STM) connected to the comparing unit (CU) and configured to determine, based on a result of the comparison, whether the value of the status signal lies outside a range of operation defined by the at least one reference value. The state machine circuit (STM) is further configured to indicate the reading device (RD) that the value of the status signal lies outside the range of operation if the value of the status signal lies outside the range of operation.
Type:
Grant
Filed:
April 28, 2016
Date of Patent:
August 6, 2019
Assignee:
ams AG
Inventors:
Giancarlo Cutrignelli, Iztok Bratuz, Anton Pletersek, Alexander Hacker, Giuliano Manzi
Abstract: The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.
Type:
Grant
Filed:
March 11, 2014
Date of Patent:
August 6, 2019
Assignee:
ams AG
Inventors:
Jordi Teva, Frederic Roger, Ewald Stueckler, Stefan Jessenig, Rainer Minixhofer, Ewald Wachmann, Martin Schrems, Guenther Koppitsch
Abstract: An electrostatic discharge protection circuit is proposed comprising a series connection of a pull-up resistor and a trigger device, connecting a first and a second supply terminal. A coupling device is connected between the first and the second supply terminal, and further connected to the series connection so as to generate at an output a compensation voltage depending on a trigger voltage of the trigger device. A discharge device for discharging current from an electrostatic discharge event is connected between the first and second supply terminal and connected to the output of the coupling device, and operating in response to the compensation voltage.