Abstract: The present technology includes methods and systems for improving substrate processing. Methods and systems include disposing a substrate on a pedestal that includes a plurality of heating zones each with an independent heater, processing the substrate according to an initial substrate processing recipe that includes an initial pedestal temperature, collecting initial substrate feedback of one or more substrate properties and providing the data as a first input to a substrate control algorithm. Methods include generating a substrate model based upon one or more modeling tests of the substrate, providing the generated substrate model as a second input to the substrate control algorithm, controlling the heater power or heater temperature to achieve a targeted substrate property in one or more substrate regions. Methods include where the correction is calculated and performed by a processor running the substrate control algorithm based upon the first input and the second input.

Abstract: Embodiments of exhaust liner systems are provided herein. In some embodiments, an exhaust liner system for use in a process chamber includes a lower exhaust liner having an annular body with a central opening; an upper flange, a central flange, and a lower flange extending outward from the annular body, wherein the lower flange and the central flange partially define a first plenum, and wherein the central flange and the upper flange partially define a second plenum; a plurality of exhaust holes from the central opening to the first plenum; and at least one cutout in the central flange to provide a flow path from the first plenum to the second plenum, wherein the lower exhaust liner defines a gas flow path from the central opening to the first plenum via the plurality of exhaust holes and from the first plenum to the second plenum via the least one cutout.

Abstract: The present disclosure generally relates to a method and apparatus for forming a substrate having a graduated refractive index. A method of forming a waveguide structure includes expelling plasma from an applicator having a head toward a plurality of grating structures formed on a substrate. The plasma is formed in the head at atmospheric pressure. The method further includes changing a depth of the plurality of grating structures with the plasma by removing grating material from the plurality of grating structures.

Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Abstract: Lithium ion batteries, methods of making the same, and equipment for making the same are provided. In one or more embodiments, an integrated processing system operable to form a pre-lithiated electrode includes a reel-to-reel system operable to transport a continuous sheet of material through processing chambers and a pre-lithiation module defining a processing region and is adapted to process the continuous sheet of material. The pre-lithiation module contains a lithium metal target operable to contact and supplying lithium to the continuous sheet of material, a press coupled with the lithium metal target and operable to move the lithium metal target into contact with the continuous sheet of material, one or more ultrasonic transducers positioned in the processing region and operable to apply ultrasonic energy to the lithium metal target, and one or more heat sources positioned in the processing region and operable to heat the lithium metal target.

Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which comprise an integrated dipole region to meet reduced thickness and lower thermal budget requirements. The electronic devices described herein comprise a source region, a drain region, and a channel separating the source region and the drain region, and a dipole region having an interfacial layer, a metal film substantially free of non-metal atoms on the interfacial layer, and a high-? dielectric layer on the metal film. In some embodiments, the dipole region of the electronic devices comprises an interfacial layer, a high-? dielectric layer on the interfacial layer, and a metal film on the high-? dielectric layer. In some embodiments, the methods comprise annealing the substrate to drive particles of metal from the metal film into one or more of the interfacial layer or the high-? dielectric layer.

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

Abstract: Exemplary semiconductor processing methods include forming a via in a semiconductor structure. The via may be defined in part by a bottom surface and a sidewall surface formed in the semiconductor structure around the via. The methods may also include depositing a tantalum nitride (TaN) layer on the bottom surface of the via. In embodiments, the TaN layer may be deposited at a temperature less than or about 200° C. The methods may still further include depositing a titanium nitride (TiN) layer on the TaN layer. In embodiments, the TiN layer may be deposited at a temperature greater than or about 300° C. The methods may additionally include depositing a fill-metal on the TiN layer in the via. In embodiments, the metal may be deposited at a temperature greater than or about 300° C.

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.

Abstract: Exemplary support assemblies may include a top puck characterized by a first surface and a second surface opposite the first surface. The top puck may define a recessed ledge at an outer edge of the first surface of the top puck. The assemblies may include a cooling plate coupled with the top puck adjacent the second surface of the top puck. The assemblies may include a back plate coupled with the top puck about an exterior of the top puck. The back plate may at least partially define a volume with the top puck. The cooling plate may be housed within the volume. The assemblies may include a heater disposed on the recessed ledge of the top puck. The assemblies may include an edge ring seated on the heater and extending about the top puck. The edge ring may be maintained free of contact with the top puck.

Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

Abstract: Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film.

Abstract: A method of forming an optical device is provided. The method includes disposing an optical device substrate on a substrate support in a process volume of a process chamber, the optical device substrate having a first surface; and forming a first optical layer on the first surface of the optical device substrate during a first time period when the optical device substrate is on the substrate support, wherein the first optical layer comprises one or more metals in a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride, and the first optical layer is formed without an RF-generated plasma over the optical device substrate; and forming a second optical layer with an RF-generated plasma over the first optical layer during a second time period when the optical device substrate is on the substrate support.

Abstract: Magnet assemblies comprising a housing with a top plate each comprising aligned openings are described. The housing has a bottom ring and an annular wall with a plurality of openings formed in the bottom ring. The top plate is on the housing and has a plurality of openings aligned with the plurality of openings in the bottom ring of the housing. The magnet assembly may also include a non-conducting base plate and/or a conductive cover plate. Methods for using the magnet assembly and magnetic field tuning are also described.

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Abstract: Embodiments of the disclosure include an electric field measurement system that includes a first light source, a first light sensor configured to receive electromagnetic energy transmitted from the first light source, an electro-optic sensor, and a controller. The electro-optic sensor may include a package comprising a first electro-optic crystal disposed within a body; and at least one optical fiber. The optical fiber is configured to transmit electromagnetic energy transmitted from the first light source to a surface of the first electro-optic crystal, and transmit at least a portion of the electromagnetic energy transmitted to the surface of the first electro-optic crystal and subsequently passed through at least a portion of the first electro-optic crystal to the first light sensor that is configured to generate a signal based on an attribute of the electromagnetic energy received by the first light sensor from the at least one optical fiber.

Abstract: A heat exchanger for abating compounds produced in semiconductor processes is presented. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a fluid heat exchanging surface within the heat exchanger. The heat exchanging surface can include a plurality of channel regions which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the fluid heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller footprint and reducing costs.