Patents Assigned to Applied Material Inc.
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Patent number: 12317758Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.Type: GrantFiled: May 10, 2023Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Zihao Yang, Mingwei Zhu, Nag B. Patibandla, Nir Yahav, Robert Jan Visser, Adi de la Zerda
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Patent number: 12317378Abstract: A method of providing power to a plurality of heaters in multiple zones for wafer-processing equipment may include causing a voltage to be supplied to a plurality of power leads configured to supply the voltage to a plurality of different heating zones in a pedestal, causing current to be received from the plurality of different heating zones through a return lead that is shared by the plurality of power leads, and causing a polarity of the voltage provided to the plurality of power leads to switch. The switching frequency may be configured such that a DC chucking operation can be active at the same time to hold a substrate to the pedestal. Duty cycling the heating zones that share the return lead may minimize the current through the shared return lead.Type: GrantFiled: February 4, 2021Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Uwe P. Haller, Kiyki-Shiy N. Shang, Dmitry A. Dzilno
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Patent number: 12315718Abstract: A method includes depositing a flowable film on a substrate by providing a first input flow, the first input flow including plasma effluents of a first precursor, removing a portion of the flowable film from a sidewall of a feature defined within the substrate to obtain a remaining portion of the flowable film by providing a second input flow, the second input flow including plasma effluents of a second precursor, reducing hydrogen content of the remaining portion of the flowable film to obtain a densified film by providing a third input flow, the third input flow including plasma effluents of a third precursor, and treating the densified film in accordance with a film treatment process.Type: GrantFiled: July 26, 2022Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Bhargav S. Citla, Srinivas D. Nemani, Purvam Modi, Ellie Y. Yieh
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Patent number: 12315736Abstract: A semiconductor processing method may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include an exposed region of silicon-and-oxygen-containing material. The substrate may include an exposed region of a liner material. The methods may include providing a hydrogen-containing precursor to the semiconductor processing region. The methods may include contacting the substrate with the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include selectively removing at least a portion of the exposed silicon-and-oxygen-containing material.Type: GrantFiled: September 14, 2022Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Lala Zhu, Shi Che, Dongqing Yang, Nitin K. Ingle
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Patent number: 12317543Abstract: Embodiments of the present disclosure generally relate to an organic light emitting diode device, and more particularly, to moisture barrier films utilized in an OLED device. The OLED device comprises a thin film encapsulation structure and/or a thin film transistor. A moisture barrier film is used as a first barrier layer in the thin film encapsulation structure and as a passivation layer and/or a gate insulating layer in the thin film transistor. The moisture barrier film comprises a silicon oxynitride material having a low refractive index of less than about 1.5, a low water vapor transmission rate of less than about 5.0×10?5 g/m2/day, and low hydrogen content of less than about 8%.Type: GrantFiled: July 10, 2019Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Wen-Hao Wu, Jriyan Jerry Chen, Dong Kil Yim
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Patent number: 12317493Abstract: Methods of forming 3D NAND devices are discussed. Some embodiments form 3D NAND devices with increased cell density. Some embodiments form 3D NAND devices with decreased vertical and/or later pitch between cells. Some embodiments form 3D NAND devices with smaller CD memory holes. Some embodiments form 3D NAND devices with silicon layer between alternating oxide and nitride materials.Type: GrantFiled: November 28, 2022Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Thomas Kwon, Xinhai Han
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Patent number: 12315747Abstract: A system for transferring semiconductor workpieces from a load lock to an orientation station and on to a platen is disclosed. The system comprises two load locks, two robots, and one orientation station. Each robot is associated with a respective load lock and follows a fixed sequence. The robot returns a processed workpiece to the load lock and also removes an unprocessed workpiece. The robot then moved to the orientation station, where it removes an aligned workpiece from the orientation station and deposits the unprocessed workpiece on the orientation station. Next, the robot moves to the platen, where it removes a processed workpiece and deposits the aligned workpiece. The robot then returns to the load lock and repeats this sequence.Type: GrantFiled: October 31, 2022Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Jason M. Schaller, Michael Carrell, William T. Weaver, Charles T. Carlson
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Patent number: 12315724Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and an inert gas to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the inert gas. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The processing region may be maintained free of helium delivery during the deposition method.Type: GrantFiled: April 20, 2021Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Zeqiong Zhao, Allison Yau, Sang-Jin Kim, Akhil Singhal, Zhijun Jiang, Deenesh Padhi, Ganesh Balasubramanian
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Patent number: 12313180Abstract: Certain embodiments of the present disclosure relate to a gas flow valve. The gas flow valve includes a housing configured to receive a flow of gas. The gas flow valve further includes a plunger configured to move between a closed position and one or more open positions within the housing. The gas flow valve further includes a position sensor configured to measure a distance associated with a difference in position of the plunger between the closed position and the one or more open position. The gas flow valve further includes a force sensor coupled to the plunger and configured to measure a force exerted by the plunger in the closed position on a sealing surface.Type: GrantFiled: August 18, 2023Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventor: Chang Ke
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Patent number: 12315746Abstract: Embodiments of the disclosure provided herein generally relate to a bottom cover plate (BCP) that enables control of radiation loss from a heating element inside a chamber for processing a substrate. The heating element is used to heat the substrate before or during processing and may heat the substrate unevenly due to uneven heat losses within the chamber. For example, the uneven heating of the substrate may result in uneven deposition of a material on the substrate, which may result in excess processing to correct the deposition or wasted product from disposing of improperly processed substrates. The BCP may be used to correct the uneven heating of the substrate.Type: GrantFiled: October 22, 2021Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Zubin Huang, Srinivas Tokur Mohana, Sandesh Yadamane, Kai Wu, Jallepally Ravi, Xiaozhou Yu, Peiqi Wang
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Patent number: 12314340Abstract: Implementations disclosed describe systems and techniques to detect anomalies in a manufacturing operation. The techniques include generating, using a plurality of outlier detection models, a plurality of outlier scores. The outlier scores are representative of a degree of presence, in a plurality of sensor statistics, of an anomaly associated with the manufacturing operation. Individual outlier scores are generated using a respective one of the plurality of outlier detection models. The techniques further include determining, using the outlier scores, a likelihood of the anomaly associated with the manufacturing operation.Type: GrantFiled: April 19, 2023Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Jimmy Iskandar, Michael D. Armacost
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Patent number: 12313838Abstract: Exemplary reflective display components are described. These reflective display components may include a microwell layer having a first and a second quantum dot well that each include a plurality of nanoparticles configured to emit a color of light. The microwell layer further has a third well. The reflective display components further include an electrowetting layer positioned above the microwell layer, where the electrowetting layer is operable to independently adjust an intensity of light emitted from the first and second quantum dot wells and the third well in the microwell layer.Type: GrantFiled: November 3, 2023Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Robert Anthony Nordsell, Arvinder M. Chadha
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Patent number: 12311494Abstract: A method of polishing includes holding a substrate with a carrier head against a polishing surface of a polishing pad, generating relative motion between the substrate and polishing pad, applying a first pressure modulated by a first modulation function to a first region of the substrate, applying a second pressure modulated by a second modulation function that is orthogonal to the first modulation function to a second region of the substrate, during polishing of the substrate monitoring the substrate with an in-situ friction monitoring system to generate a sequence of measured values, and determining a relative contribution to the sequence of measured value from the first region and second region based on distinguishing the first frequency from the second frequency.Type: GrantFiled: February 22, 2022Date of Patent: May 27, 2025Assignee: Applied Materials, Inc.Inventors: Thomas Li, Benjamin Cherian
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Publication number: 20250166885Abstract: A scalable high-impedance component (SHIC) may include a flexible polyimide core may include one or more vias. The SHIC may include a magnetic film formed on one or more sides of the flexible polyimide core. The SHIC may include a polymer layer formed on the magnetic film, the polymer layer isolating the magnetic film and the flexible polyimide core. The SHIC may include a metal layer formed on the polymer layer and within the vias, such that the metal layer forms windings that extend through the one or more vias. The SHIC may include a magnetic paste disposed on the metal layer such that the SHIC shields a desired frequency of electromagnetic interference.Type: ApplicationFiled: November 17, 2023Publication date: May 22, 2025Applicants: Applied Materials, Inc., The Florida International University Board of TrusteesInventors: Ghaleb Saleh Ghaleb Al-Duhni, Mudit Sunilkumar Khasgiwala, Markondeyaraj Pulugurtha, Mohammad Mohtasim Hamid Pial, Subramani Kengeri, Kunal Ghosh, Meghna Maheshkumar Patel, Sachin Jayant Patil, Arvin Khosravi
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Publication number: 20250163573Abstract: Semiconductor processing methods and semiconductor structures are provided with molybdenum-containing features. Methods include etching a substrate to form one or more shallow trench isolations and a plurality of vertically extending channels. Methods include forming one or more molybdenum-containing layers within one or more of the shallow trench isolations. Methods include contacting an exposed surface of the one or more molybdenum-containing layers with a nitrogen-containing precursor, where the contacting nitrides the exposed surface of the one or more molybdenum-containing layers, forming a protective layer over the one or more molybdenum-containing layers.Type: ApplicationFiled: November 13, 2024Publication date: May 22, 2025Applicant: Applied Materials, Inc.Inventors: Zhijun CHEN, Jongbeom SEO, Fredrick FISHBURN, Raghuveer S. MAKALA
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Publication number: 20250163578Abstract: Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A conductive insert is disposed within at least one of the dielectric faceplate gas openings or adjacent o-rings included in the plasma showerhead assemblies.Type: ApplicationFiled: April 4, 2024Publication date: May 22, 2025Applicant: Applied Materials, Inc.Inventors: Hanhong Chen, Kenneth Brian Doering, Sanjeev Baluja, Chi-Chou Lin, Kevin Griffin, Joseph AuBuchon, Zhejun Zhang, Rohit Ode, Tejas Umesh Ulavi
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Publication number: 20250167132Abstract: A shielding structure for a semiconductor device may include a first segment formed from a first set of layers including a first metal and a second metal. The structure may include a second segment formed from a second set of layers. The second set of layers may include the first metal and the second metal, the second segment orthogonal to the first segment, where the second segment is configured to be inserted into a trench in a substrate of the semiconductor device.Type: ApplicationFiled: November 17, 2023Publication date: May 22, 2025Applicants: Applied Materials, Inc., The Florida International University Board of TrusteesInventors: Ghaleb Saleh Ghaleb Al-Duhni, Mudit Sunilkumar Khasgiwala, Markondeyaraj Pulugurtha, Satheesh Bojja Venkatakrishnan, John Leonidas Volakis, Subramani Kengeri, Kunal Ghosh, Meghna Maheshkumar Patel, Sachin Jayant Patil, Arvin Khosravi
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Publication number: 20250166880Abstract: An inductor may include a flexible polyimide flexible core may including one or more cavities. The inductor may include a magnetic film, formed on two sides of the flexible polyimide flexible core and on a respective sidewall of each of the one or more cavities. The inductor may include a dielectric layer formed on the magnetic film. The inductor may also include a metal layer formed on the dielectric layer and within the cavities, such that vias are formed on one or more sides of the inductor and extend through the one or more cavities.Type: ApplicationFiled: November 17, 2023Publication date: May 22, 2025Applicants: Applied Materials, Inc., The Florida International University Board of TrusteesInventors: Mohammad Mohtasim Hamid Pial, Mudit Sunilkumar Khasgiwala, Markondeyaraj Pulugurtha, Subramani Kengeri, Kunal Ghosh, Meghna Maheshkumar Patel, Sachin Jayant Patil, Arvin Khosravi
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Publication number: 20250157855Abstract: Methods for selectively depositing a material on a dielectric surface relative to a metallic surface are disclosed. The metallic surface is protected with a self-assembled monolayer comprising an N-heterocyclic carbene prior to deposition of a liner or barrier layer on adjacent dielectric surfaces.Type: ApplicationFiled: November 7, 2024Publication date: May 15, 2025Applicant: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Jesus Candelario Mendoza-Gutierrez, Mark Saly, Chandan Kr Bank, Andrea Leoncini, Wei Chun Lim, Sze Chieh Tan, Lisa J. Enman
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Publication number: 20250157833Abstract: An ion processing system including a process chamber containing a platen for supporting a semiconductor substrate, the platen mounted on a movable shaft, an ion source connected to the process chamber and adapted to project an ion beam toward the platen, and at least one cooled plate located within the process chamber for collecting byproducts of etching and deposition processes.Type: ApplicationFiled: November 15, 2023Publication date: May 15, 2025Applicant: Applied Materials, Inc.Inventors: Tyler ROCKWELL, Kevin T. RYAN, Nicholas Scott CHAMBERLAIN, Costel BILOIU
