Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.

Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.

Abstract: A method includes receiving, from one or more sensors, sensor data associated with manufacturing equipment and updating one or more values of a digital replica associated with the manufacturing equipment based on the sensor data. The digital replica comprises a model reflecting a virtual representation of physical elements and dynamics of how the manufacturing equipment operates. One or more outputs indicative of predictive data is obtained from the digital replica and, based on the predictive data, performance of one or more corrective actions associated with the manufacturing equipment is caused.

Abstract: Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to optical devices and methods of manufacturing a patterned optical device film on an optical device substrate. According to certain embodiments, an inkjet deposition process is used to deposit a patterned inkjet coating layer on the optical device substrate. A deposition process may then be used to deposit an optical device material on the patterned inkjet coating and the optical device substrate. The patterned inkjet coating on the optical device substrate may then be washed with an appropriate detergent to lift-off the patterned inkjet coating layer from the optical device substrate to form the patterned optical device film.

Abstract: A vapor deposition apparatus is provided. The vapor deposition apparatus includes a tank for providing a liquefied material, a first unit having an alterable first volume, the first unit including a first actuator and including a first line to be in fluid communication with the tank. Further, the vapor deposition apparatus includes a second unit having an alterable second volume, the second unit including a second actuator and including a second line to be in fluid communication with the tank. The vapor deposition apparatus includes an evaporation arrangement, the evaporation arrangement being in fluid communication with the first unit and the second unit. The first actuator and the second actuator are configured to alternatingly provide a force to the alterable first volume and the alterable second volume for providing the liquefied material to the evaporation arrangement.

Abstract: The present disclosure includes edge defect detection via image analytics. A method includes identifying an image of an edge of a susceptor pocket formed by a susceptor of a substrate processing system. The method further includes predicting, based on the image, whether property values of the edge of the susceptor meet threshold values. The method further includes, responsive to the property values of the edge meeting threshold values, causing performance of a corrective action associated with the susceptor.

Abstract: A system and method including a processing device. The processing device receives data including one or more plasma exposure durations of a plasma process. The plasma exposure duration are associated with a set of controlled elements. The processing device causes a each set of controlled elements to switch between a first mode of operation and a second mode of operation. Each set of controlled elements expose appropriate portion of a substrate to the plasma related fluxes. The first set of controlled elements process the substrate at an increased rate while operating in the first mode of operation relative to the second mode of operation. The processing device causes each set of controlled elements to operate in the first mode of operation for the appropriate time duration based on the received plasma exposure duration data.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: A sealing member includes a monolithic body including a first portion adjoining a second portion. The first portion forms part of a circle. The second portion includes first and second lobes. Each lobe adjoins the first portion with a concave surface. In one example, each lobe includes a rounded tip, and a convex surface extends from one rounded tip to the other rounded tip.

Abstract: Exemplary semiconductor processing methods may include performing a treatment operation on a substrate housed within a first processing region of a first semiconductor processing chamber. The methods may include providing a nitrogen-containing precursor to the first processing region. The methods may include forming plasma effluents of the nitrogen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the nitrogen-containing precursor. The contacting may nitride a surface of the substrate. The methods may include transferring the substrate from the first processing region of the first semiconductor processing chamber to a second processing region of a second semiconductor processing chamber. The methods may include providing one or more deposition precursors to the second processing region. The methods may include contacting the substrate with the one or more deposition precursors. The contacting may deposit a layer of dielectric material on the substrate.

Abstract: Gas distribution assemblies for a semiconductor manufacturing processing chamber comprising a first showerhead with a first flange and a second showerhead with a second flange. A first two-piece RF isolator comprises a first inner RF isolator spaced from a first outer RF isolator. The first inner RF isolator spaced from the first flange of the first showerhead to create a first flow path. A second two-piece RF isolator comprises a second inner RF isolator spaced from a second outer RF isolator. The second RF isolator spaced from the second flange of the second showerhead to create a second flow path. Processing chambers incorporating the gas distribution assemblies, and processing methods using the gas distribution assemblies are also described.

Abstract: Exemplary semiconductor processing methods may include providing a pre-treatment precursor to a processing region of a semiconductor processing chamber. A first layer of silicon-and-germanium-containing material and a second layer of silicon-and-germanium-containing material may be disposed on a substrate housed within the processing region. A native oxide may be present on the first layer and the second layer. The methods may include contacting the substrate with the pre-treatment precursor to remove the native oxide. The methods may include providing an oxygen-containing precursor to the processing region. The methods may include contacting the substrate with the oxygen-containing precursor to oxidize at least a portion of the second layer. The methods may include providing an etchant precursor to the processing region. The methods may include contacting the substrate with the etchant precursor to selectively etch the first layer of silicon-and-germanium-containing material.

Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support within the chamber body. The substrate support may define a substrate support surface. The chambers may include a faceplate supported atop the chamber body. The substrate support and a bottom surface of the faceplate may at least partially define a processing region. The bottom surface of the faceplate may define an annular protrusion that is directly above at least a portion of a radially outer 10% of the substrate support surface and an annular groove that is positioned radially outward of the annular protrusion. At least a portion of the annular groove may extend radially outward beyond the substrate support surface. The faceplate may define apertures through the faceplate. A first subset of the apertures may extend through the annular protrusion and a second subset of the apertures may extend through the annular groove.

Abstract: Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.

Abstract: Ampoules including a solid volume of the semiconductor chemical precursor and methods of use and manufacturing are described. The solid volume of the semiconductor chemical precursor includes an ingress opening, at least one flow channel, and an outlet passage that are in fluid communication with each other. The solid volume of the semiconductor manufacturing precursor is made of a porous or alternatively a non-porous material. A flow path is defined by at least one flow channel through which a carrier gas flows in contact with the solid volume of the semiconductor chemical precursor.

Abstract: The present disclosure relates to systems and methods for detecting anomalies in a semiconductor processing system. According to certain embodiments, one or more external sensors are mounted to a sub-fab component, communicating with the processing system via a communication channel different than a communication channel utilized by the sub-fab component and providing extrinsic sensor data that the sub-fab component is not configured to provide. The extrinsic sensor data may be combined with sensor data from a processing tool of the system and/or intrinsic sensor data of the sub-fab component to form virtual sensor data. In the event the virtual data exceeds or falls below a threshold, an intervention or a maintenance signal is dispatched, and in certain embodiments, an intervention or maintenance action is taken by the system.

Abstract: Disclosed herein is a substrate support assembly having a ground electrode mesh disposed therein along a side surface of the substrate support assembly. The substrate support assembly has a body. The body has an outer top surface, an outer side surface and an outer bottom surface enclosing an interior of the body. The body has a ground electrode mesh disposed in the interior of the body and adjacent the outer side surface, wherein the ground electrode does not extend through to the outer top surface or the outer side surface.

Abstract: A material deposition apparatus for depositing an evaporated material onto a substrate is provided. The material deposition apparatus includes a processing drum having a cooler configured to control a substrate temperature during processing of a substrate on the processing drum; a roller guiding the substrate towards the processing drum; a first heater assembly positioned to heat the substrate in a free-span area between the roller and the processing drum; a second heater assembly positioned to heat the substrate while being supported on the processing drum; at least one deposition source provided along a substrate transport path downstream of the second heater assembly; a substrate speed sensor providing a speed signal correlating with a substrate transportation speed; and a controller having an input for the speed signal configured to control at least the first heater assembly.

Abstract: Embodiments described herein provide for devices and methods of measuring a pitch P of optical device structures and an orientation angle ? of the optical device structures. One embodiment of the system includes an optical arm coupled to an arm actuator. The optical arm includes a light source. The light source emits a light path operable to be diffracted to the stage. The optical arm further includes a first beam splitter and a second beam splitter positioned in the light path. The first beam splitter directs the light path through a first lens and the second beam splitter directs the light path through a first dove prism and a second lens. The optical arm further includes a first detector operable to detect the light path from the first lens and second detector operable to detect the light path from the second lens.

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.