Abstract: An electronic device manufacturing system configured to receive, by a processor, input data reflecting a feature related to a manufacturing process of a substrate. The manufacturing system is further configured to train a machine-learning model based on the input data reflecting the feature. The manufacturing system is further configured to modify the machine-learning model in view of the virtual knob for the feature.

Abstract: A method of preparing an abuse deterrent pharmaceutical composition having a drug-containing core enclosed by one or more metal oxide materials is provided. The method includes the sequential steps of (a) loading the particles comprising the drug into a reactor, (b) applying a vaporous or gaseous metal precursor to the particles in the reactor, (c) performing one or more pump-purge cycles of the reactor using inert gas, (d) applying a vaporous or gaseous oxidant to the particles in the reactor, and (e) performing one or more pump-purge cycles of the reactor using inert gas. This produces an abuse deterrent pharmaceutical composition comprising a drug containing core enclosed by one or more metal oxide materials.

Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing.

Abstract: Methods for in situ seasoning of process chamber components, such as electrodes are described. In an embodiment, the method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

Abstract: A method of fabricating a multi-color display includes forming a host matrix over a display having an array of light emitting diodes. The host matrix is sensitive to ultraviolet light. A first plurality of light emitting diodes in a first plurality of wells are activated to illuminate a portion of the host matrix to cause the portion of the host matrix to develop internal porous structures. A first photo-curable fluid including a first color conversion agent is dispensed. The first plurality of light emitting diodes in the first plurality of wells are activated to illuminate and cure the first photo-curable fluid to form a first color conversion layer over each of the first plurality of light emitting diodes, and an uncured remainder of the first photo-curable fluid is removed.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Abstract: A polishing pad includes a sensor assembly surrounded by a lower portion of the polishing pad, and an upper portion including a pad portion disposed on the assembly and at least a portion of a polishing layer disposed on the lower portion. The sensor assembly includes a lower body having a first pair of electrodes formed thereon, a polymer body having a second pair of electrodes formed thereon and aligned with the first pair of electrodes, and a pair of gaps between the first pair of electrodes and the second pair of electrodes.

Abstract: A substrate processing system comprises an etch chamber configured to perform an etch process on a substrate, the etch chamber comprising an optical sensor to generate one or more optical measurements of a film on the substrate during and/or after the etch process. The system further comprises a computing device operatively connected to the etch chamber, wherein the computing device is to: receive the one or more optical measurements of the film; determine, for each optical measurement of the one or more optical measurements, a film thickness of the film; determine an etch rate of the film based on the one or more optical measurements using the determined film thickness of each optical measurement of the one or more optical measurements; and determine a process parameter value of at least one process parameter for a previously performed process that was performed on the substrate based on the etch rate.

Abstract: A method for determining a depth of a hidden structural element of an object, the method may include (i) obtaining contrast information regarding a contrast between (a) hidden structural element detection signals that are indicative of electrons emitted from the hidden structural element, and (b) surroundings detection signals that are indicative of electrons emitted from a surroundings of the hidden structural element; wherein the hidden structural element detection signals and the surroundings detection signals are detected as a result of a scanning of a region of the object, with an illuminating electron beam; wherein the region comprises the hidden structural element and the surroundings; and (ii) determining the depth of the hidden structural element based, at least in part, on the contrast information.

Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-oxygen-and-carbon-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-oxygen—and—carbon-containing material on the substrate. The layer of silicon-oxygen—and—carbon-containing material may be characterized by a dielectric constant of less than or about 4.5. The layer of silicon-oxygen—and—carbon-containing material may be characterized by a density of greater than or about 2.0 g/cm3.

Abstract: Methods of semiconductor processing may include forming plasma effluents of a plurality of precursors (e.g., an etchant precursor, an oxygen-containing precursor, and a silicon-and-fluorine-containing precursor like silicon tetrafluoride). The plasma effluents may then contact a silicon-containing material and a mask material on a substrate in a processing region of a semiconductor processing chamber. The mask material may have one or more apertures therein that allow the plasma effluents access to the silicon-containing material. Contacting the silicon-containing material and the mask material with the plasma effluents may cause (i) etching the silicon-containing material with the plasma effluents to form and/or deepen one or more features in the silicon-containing material and (ii) simultaneously etching the mask material and depositing a silicon-and-oxygen-containing material on the mask material with the plasma effluents.

Abstract: Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

Abstract: A method of depositing material over a sample in a deposition region of the sample with a charged particle beam column, the method comprising: positioning a sample within a vacuum chamber such that the deposition region is under a field of view of the charged particle beam column; cooling the deposition region by contacting the sample with a cyro-nanomanipulator tool in an area adjacent to the deposition region; injecting a deposition precursor gas into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with a charged particle beam column and focusing the charged particle beam on the sample; and scanning the focused electron beam across the localized region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region.

Abstract: A method of post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate includes positioning a substrate having a silicon nitride (SiN)-based dielectric film formed thereon in a processing chamber, and exposing the silicon nitride (SiN)-based dielectric film to helium-containing high-energy low-dose plasma in the processing chamber. Energy of helium ions in the helium-containing high-energy low-dose plasma is between 1 eV and 3.01 eV, and flux density of the helium ions in the helium-containing high-energy low-dose plasma is between 5×1015 ions/cm2·sec and 1.37×1016 ions/cm2·sec.

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

Abstract: A robot apparatus is configured to extend a first end effector into a first process chamber and extend a second end effector into a second process chamber. The first process chamber and the second process chamber are separated by a first pitch. The robot apparatus is further configured to retract the first end effector and the second end effector into a rectangular mainframe while maintaining a distance between the substrates bounded by the first pitch throughout a retraction process, and fold the first end effector and the second end effector inward within a sweep diameter defined by a width of the rectangular mainframe.

Abstract: Embodiments of the present disclosure relate to optical devices for augmented, virtual, and/or mixed reality applications. In one or more embodiments, an optical device metrology system is configured to measure a plurality of first metrics and one or more second metrics for optical devices, the one or more second metrics including a display leakage metric.

Abstract: Technologies directed to an eco-efficiency monitoring and exploration platform for semiconductor manufacturing. One method includes receiving, by a processing device, first data indicating an update to a substrate fabrication system having a first configuration of manufacturing equipment and operating to one or more process procedures. The method further includes determining, by the processing device, using the first data with a digital replica, environmental resource data. The digital replica includes a digital reproduction of the substrate fabrication system. The environmental resource usage data indicates an environment resource consumption that corresponds to performing the one or more process procedures by the substrate fabrication system incorporating the update. The method further includes providing, by the processing device, the environmental resource usage data for display on a graphical user interface (GUI).

Abstract: A metal gate stack on a substrate comprises: an interfacial layer on the substrate; a high-? metal oxide layer on the interfacial layer, the high-? metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region comprising niobium (Nb); a high-? metal oxide capping layer on the high-? metal oxide layer; a positive metal-oxide-semiconductor (PMOS) work function material above the high-? metal oxide capping layer; and a gate electrode above the PMOS work function material. The dipole region is formed by driving Nb species of a Nb-based film into the high-? metal oxide layer to form a dipole region.