Abstract: Embodiments of the present disclosure are related to carrier assemblies that can clamp more than one optical device substrates and methods for forming the carrier assemblies. The carrier assembly includes a carrier, one or more substrates, and a mask. The carrier is magnetically coupled to the mask to retain the one or more substrates. The carrier assembly is used for supporting and transporting the one or more substrates during processing. The carrier assembly is also used for masking the one or more substrates during PVD processing. Methods for assembling the carrier assembly in a build chamber are described herein.

Abstract: A ribbon beam plasma enhanced chemical vapor deposition (PECVD) system comprising a process chamber containing a platen for supporting a substrate, and a plasma source disposed adjacent the process chamber and adapted to produce free radicals in a plasma chamber, the plasma chamber having an aperture associated therewith for allowing a beam of the free radicals to exit the plasma chamber, wherein the process chamber is maintained at a first pressure and the plasma chamber is maintained at a second pressure greater than the first pressure for driving the free radicals from the plasma chamber into the process chamber.

Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The processing systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The processing systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The processing systems may include a faceplate heater seated on the faceplate. The faceplate heater may include a first heater coil extending proximate a first area of the faceplate. The faceplate heater may include a second heater coil extending proximate a second area of the faceplate.

Abstract: Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.

Abstract: A process recipe associated with a substrate at a manufacturing system is identified. A first set of measurements for the substrate is obtained from a substrate measurement subsystem. A second set of measurements for the substrate is obtained from one or more sensors of a chamber of the manufacturing system. A determination is made based on the obtained first set of measurements and the obtained second set of measurements of whether to modify the process recipe by at least one of modifying an operation of the process recipe or generating an instruction to prevent completion of execution of one or more operations of the process recipe.

Abstract: A digital lithography system includes adjacent scan regions, exposure units located above the scan regions, a memory, and a processing device operatively coupled to the memory. The exposure units include a first exposure unit associated with a first scan region and a second exposure unit associated with a second scan region. The processing device is to initiate a digital lithography process to pattern a substrate disposed on a stage in accordance with instructions. The processing device is to further perform a first pass of the first exposure unit over a stitching region at an interface of the first scan region and the second scan region at a first time. The processing device is to further perform a second pass of the second exposure unit over the stitching region at a second time that varies from the first time by less than forty seconds.

Abstract: Embodiments described herein generally relate to a display. In one or more embodiments, a sub-pixel circuit includes at least two anodes disposed over a substrate. Adjacent anodes define a well. Adjacent overhang structures are disposed in the well. The overhang structures have an overhang thickness from the substrate to an upper surface of the overhang structures. The overhang thickness and the anode thickness are substantially equivalent. The overhang structures include overhang extensions extending past lower sidewalls. The well has a trench area defined by the lower sidewalls and a bottom surface of the overhang extensions, with a gap between the overhang extensions of the adjacent overhang structures. An organic light emitting diode (OLED) material is disposed over the anode, the upper surface of the overhang structures, under the overhang structures, and within the trench area. A cathode is disposed over the OLED material.

Abstract: The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

Abstract: A method includes determining a plurality of dependencies associated with a plurality of tasks of a substrate processing system. The method further includes generating, based on the plurality of dependencies, a dependency graph of the plurality of tasks. The method further includes topologically sorting the dependency graph to generate one or more outputs. A schedule associated with processing a plurality of substrates in the substrate processing system is based on the one or more outputs.

Abstract: An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

Abstract: Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

Abstract: A semiconductor processing chamber may process wafers by submerging the wafers in a liquid. To determine when the liquid is free of disturbances or contaminants and thus ready to receive the next wafer, a camera may be positioned to capture images of the liquid after a wafer has been removed from the liquid. A controller may provide the images of the liquid to a neural network to determine when the liquid is ready based on an output of the neural network. The neural network may be trained to identify disturbances, such as ripples, bubbles, or contaminants in the liquid. The controller may then begin controlling the next semiconductor process and submerge the next wafer.

Abstract: A method includes receiving first data associated with measurements taken by a sensor during a first manufacturing procedure of a manufacturing chamber. The method further includes receiving second data. The second data includes reference data associated with the first data. The method further includes providing the first and second data to a comparison model. The method further includes receiving a similarity score from the comparison model, associated with the first and second data. The method further includes performance of a corrective action in view of the similarity score.

Abstract: An apparatus may include global control module, the global control module including a digital master clock generator and a master waveform generator. The apparatus may also include a plurality of resonator control modules, coupled to the global control module. A given resonator control module of the plurality of resonator control modules may include a synchronization module, having a first input coupled to receive a resonator output voltage pickup signal from a local resonator, a second input coupled to receive a digital master clock signal from the digital master clock generator, and a first output coupled to send a delay signal to the master waveform generator.

Abstract: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

Abstract: The subject matter of this specification can be implemented in, among other things, methods, systems, computer-readable storage medium. A method can include receiving (i) sensor data indicating a first state of an environment of a processing chamber processing a substrate subsequent to a chamber recovery procedure, and (ii) substrate process data indicating a set of process parameter values associated with performing a substrate processing procedure by the processing chamber having the environment in a second state prior to the chamber recovery procedure. The method further includes processing the sensor data and the substrate process data using one or more machine learning models to determine one or more outputs. The one or more outputs include an update to at least one of the set of process parameter values. The update is associated with performing the substrate processing procedure by the processing chamber having the environment in the first state.

Abstract: Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.

Abstract: A method of characterizing defects in semiconductor layers may include forming a first electrode, a first barrier layer, a semiconductor layer, and a second electrode, where the first barrier layer is between the first electrode and the semiconductor layer, and the semiconductor layer is between the first barrier layer and the second electrode. The method may also include causing current to flow through the semiconductor layer, where the first barrier layer prevents the current from entering a conduction band of the semiconductor layer and instead causes current to flow through defects in the semiconductor layer. The method may also include characterizing the defects in the semiconductor layer based on the current flowing through the defects in the semiconductor layer.

Abstract: Method and systems for cleaning and wetting a semiconductor substrate, are provided. Methods and systems include forming an atmosphere in a basin housing the semiconductor substrate with a gas having a higher solubility in a wetting agent than oxygen. Methods and systems include spraying the wetting agent with a spray head onto the substrate while maintaining the atmosphere. Methods and systems include rotationally translating the semiconductor substrate, the spray head, or both the semiconductor substrate and the spray head, Methods and systems include wetting a plurality of features defined in the substrate.