Abstract: A method for forming a nanosheet device. The method may include providing a heterostructure device stack above a semiconductor substrate. The method may include patterning the heterostructure device stack to define a dummy gate region, and before forming a source drain recess adjacent the dummy gate region, selectively removing a first set of sacrificial layers of the heterostructure device stack within the dummy gate region.

Abstract: A method and apparatus for measuring a temperature of a substrate located in a semiconductor processing environment is disclosed. The substrate has a top surface and an edge surface, and is positioned in a prescribed location within the semiconductor processing environment. An infrared camera oriented to view one side of the edge surface of the substrate is triggered to obtain an infrared image of the one side of the edge surface of the substrate. The infrared image is processed to obtain a temperature profile of the substrate.

Abstract: Embodiments of the present disclosure generally relate to an apparatus and method of processing a substrate. In at least one embodiment, an apparatus includes a chamber body, a substrate support assembly and a bracket assembly disposed outside the chamber body and coupled to the substrate support assembly. The bracket assembly has a plurality of leveling screws for adjusting a level of the substrate support assembly. The apparatus includes an actuator coupled to one of the plurality of leveling screws and an accelerometer coupled to the substrate support assembly. The accelerometer is configured to indicate an orientation of the substrate support assembly. The apparatus includes a control module in communication with the actuator and the accelerometer. The control module is configured to determine the level of the substrate support assembly based on the orientation indicated by the accelerometer and adjust the level of the substrate support assembly using the actuator.

Abstract: Exemplary flexible coverlenses and the methods of making them are described. The methods may include exposing a surface of a substrate layer to a surface treatment plasma to form a treated surface of the substrate layer. A silicon-containing adhesion layer may be deposited on the treated surface of the substrate layer. A silane-containing adhesion promoter may be incorporated on the silicon-containing adhesion layer. The method may also include forming a hardcoat layer on the silicon-containing adhesion layer, where the silane-containing adhesion promoter is bonded to both the hardcoat layer and the silicon-containing adhesion layer. The exemplary flexible coverlenses made by the present methods are less susceptable to folding fatigue along a bending or folding axis of the coverlens.

Abstract: Apparatus and methods for loading and unloading substrates from a spatial processing chamber are described. A support assembly has a rotatable center base and support arms extending therefrom. A support shaft is at the outer end of the support arms and a substrate support is on the support shaft. Primary lift pins are positioned within openings in the substrate support. Secondary lift pins are positioned within openings in the support arms and are aligned with the primary lift pins. An actuation plate within the processing volume causes, upon movement of the support assembly, the primary lift pins to elevate through contact with the secondary lift pins.

Abstract: Exemplary methods of semiconductor processing may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The methods may include contacting a surface of the substrate with the treatment precursor. The methods may include providing deposition precursors to the processing region. The deposition precursors may include a metal-containing precursor. The methods may include forming plasma effluents of the deposition precursors. The methods may include contacting the substrate with the plasma effluents of the deposition precursors. The contacting may deposit a metal-containing hardmask on the substrate.

Abstract: Transition metal dichalcogenide (TMDC) films and methods for conformally depositing TMDC films on a substrate surface are described. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate surface is exposed to a transition metal precursor and an oxidant to form a transition metal oxide film in a first phase. The transition metal oxide film is exposed to a chalcogenide precursor to convert the transition metal oxide film to the TMDC film in a second phase.

Abstract: A pre-heat ring and a process chamber having the same are described herein. In one example, a process chamber for film deposition comprises a chamber volume, a substrate support disposed in the chamber volume, the substrate support having a radially outward surface, and a pre-heat ring surrounding the substrate support. The pre-heat ring comprises a tapered wall facing the radially outward surface. The tapered wall narrows towards a top surface of the pre-heat ring and towards the substrate support.

Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of oxygen-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The contacting may etch a feature in the layer of oxygen-containing material. A semiconductor processing chamber operating temperature may be maintained at less than or about 0° C. during the semiconductor processing method.

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor and a sulfur-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of carbon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The methods may include contacting the substrate with the plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The contacting may etch a feature in the layer of carbon-containing material. A chamber operating temperature may be maintained at less than or about 0° C.

Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.

Abstract: Embodiments of this disclosure relate to methods for removing a dummy material from under a superlattice structure. In some embodiments, after removing the dummy material, it is replaced with a bottom dielectric isolation layer beneath the superlattice structure.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by a pulsing RF power operating at less than or about 2,000 W. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Embodiments of the present disclosure relate to bake apparatuses for handling and uniform baking of substrates and methods for the handling and the uniform baking of substrates. The bake apparatuses allow the substrates to be heated to a temperature greater than 50° C. without bowing of about 1 mm to about 2 mm from the edge of the substrates to the center of the substrates. The bake apparatuses heat the substrates uniformly or substantially uniformly to improve substrate quality.

Abstract: An ion source for generating an ion beam containing aluminum ions is disclosed. The ion source includes a first gas source to introduce an organoaluminium compound into the arc chamber of the ion source. A second gas, different from the first gas, which is a chlorine-containing gas is also introduced to the arc chamber. The chloride co-flow reduces the buildup of decomposition material that occurs within the arc chamber. This buildup may occur at the gas bushing, the extraction aperture or near the repeller. In some embodiments, the second gas is introduced continuously. In other embodiments, the second gas is periodically introduced, based on hours of operation or the measured uniformity of the extracted ion beam. The second gas may be introduced from second gas source or from a vaporizer.

Abstract: There is provided a system and method of defect detection of a semiconductor specimen. The method includes obtaining a first image of the specimen acquired at a first bit depth, converting by a first processor the first image to a second image with a second bit depth lower than the first bit depth, transmitting the second image to a second processor configured to perform first defect detection on the second image using a first defect detection algorithm to obtain a first set of defect candidates, and sending locations of the first set of defect candidates to the first processor, extracting, from the first image, a set of image patches corresponding to the first set of defect candidates based on the locations, and performing second defect detection on the set of image patches using a second defect detection algorithm to obtain a second set of defect candidates.

Abstract: A method for cleaning one or more interior surfaces of a processing chamber includes removing a processed substrate from the processing chamber, and introducing a first cleaning chemistry into the processing chamber to generate a first internal pressure of greater than 1.1 atm within the processing chamber and remove deposited contaminants from the one or more interior surfaces of the processing chamber. The method further comprises removing the cleaning chemistry from the processing chamber.

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

Abstract: A reactor for coating particles includes a stationary vacuum chamber to hold a bed of particles to be coated, a chemical delivery system, and a paddle assembly. The paddle assembly includes a rotatable drive shaft and a first plurality of paddles and a second plurality of paddles that extend radially from the drive shaft. The spacing, cross-sections, and oblique angles of the paddles are such that orbiting of the paddles causes the first plurality of paddles and the second plurality of paddles to displace substantially equal volumes in opposite directions in the lower portion of the stationary vacuum chamber.