Abstract: Disclosed is a wafer processing system, a dual gate system, and methods for operating these systems. The dual gate system may have a first gate, a second gate, a gate connector coupled to the first gate and to the second gate, and actuator coupled to the gate connector. The actuator is configured to seal the first gate against a first slot or open the first slot via vertical motion. The actuator is also configured to seal the second gate against a second slot or open the second slot via a combination of vertical motion and horizontal motion.

Abstract: Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.

Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.

Abstract: A method, an inspection system and a sensing unit. The sensing unit may include a light recycling optics and a photon to electron converter. The photon to electron converter is configured to receive a first light beam emitted from the object and impinging on the partially reflective surface at a first oblique angle, absorb a first portion and reflect a second portion of the first light beam to provide a first reflected beam. The light recycling optics is configured to redirect, towards the partially reflective surface, one or more reflected beams reflected from the partially reflective surface to provide one or more recycled beams. The photon to electron converter is configured to output electrons that represents an absorbed portion of the input light beam and an absorbed portion of each one of the one or more recycled beam.

Abstract: Embodiments of this disclosure provide methods for etching oxide materials. Some embodiments of this disclosure provide methods which selectively etch oxide materials over other materials. In some embodiments, the methods of this disclosure are performed by atomic layer etching (ALE). In some embodiments, the methods of this disclosure are performed within a processing chamber comprising a nickel chamber material.

Abstract: A crested barrier device with interface switching modulation layers may include a first electrode, a first tunneling layer comprising a first dielectric constant, such as cobalt oxide, and one or more interface switching modulation (ISM) layers. Each of the one or more ISM layers may include a layer of hafnium oxide, a layer of silicon oxide comprising a second dielectric constant that is at least 1.5 times larger than the first dielectric constant, and a monolayer of titanium oxide between the layer of hafnium oxide and the layer of silicon oxide. The device may also include a second tunneling layer and a second electrode.

Abstract: An enhanced ferroelectric transistor may include Interface switching modulation (ISM) layers along with a ferroelectric layer in the gate of the transistor to increase a memory window while maintaining relatively low operating voltages. The enhanced ferroelectric transistor may be implemented as a memory device storing more than two bits of information in each memory cell. An enhanced ferroelectric tunnel junction device may include ISM layers and a ferroelectric layer to amplify the tunneling barriers in the device. The ISM layers may form material dipoles that add to the effect of ferroelectric dipoles in the ferroelectric material.

Abstract: Provided herein are approaches for performing electrodynamic mass analysis with a radio frequency (RF) biased ion source to reduce ion beam energy spread. In some embodiments, a system may include an ion source including a power supply, the ion source operable to generate a plasma within a chamber housing, and an extraction power assembly including a first power supply and a second power supply electrically coupled with the chamber housing of the ion source, wherein the first power supply and the second power supply are operable to bias the chamber housing of the ion source with a time modulated voltage to extract an ion beam from the ion source. The system may further include an electrodynamic mass analysis (EDMA) assembly operable to receive the ion beam and perform mass analysis on the ion beam.

Abstract: A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for training a machine learning model to segment magnified images of tissue samples. The method includes obtaining a magnified image of a tissue sample; processing an input comprising: the image, features derived from the image, or both, in accordance with current values of model parameters of a machine learning model to generate an automatic segmentation of the image into a plurality of tissue classes; providing, to a user through a user interface, an indication of: (i) the image, and (ii) the automatic segmentation of the image; determining an edited segmentation of the image, comprising applying modifications specified by the user to the automatic segmentation of the image; and determining updated values of the model parameters of the machine learning model based the edited segmentation of the image.

Abstract: Exemplary devices may include a substrate, a dielectric layer formed on the substrate, a first light source configured to emit first light characterized by a first wavelength, a second light source configured to emit second light characterized by a second wavelength different from the first wavelength, and a third light source configured to emit third light characterized by a third wavelength different from the first wavelength and the second wavelength. The first light source may be natively formed on a first region of the substrate and arranged within a first opening of the dielectric layer. The second light source may be natively formed on a second region of the substrate and arranged within a second opening of the dielectric layer. The third light source may be natively formed on a third region of the substrate and arranged within a third opening of the dielectric layer.

Abstract: Disclosed herein is a method and apparatus for forming carbon hard masks to improve deposition uniformity and etch selectivity. The carbon hard mask may be formed in a PECVD process chamber and is a nitrogen-doped carbon hardmask. The nitrogen-doped carbon hardmask is formed using a nitrogen containing gas, an argon containing gas, and a hydrocarbon gas.

Abstract: There are provided a classifier and method of classifying defects in a semiconductor specimen. The method comprises receiving defects classified into a majority class, each having values for plurality of attributes, some defects belonging to a minority class, and some to the majority; selecting an attribute subset and defining differentiators for attributes wherein a second classifier using the subset and differentiators classifies correctly to minority and majority classes at least part of the defects; generating a training set comprising: defects of the majority and minority classes, and additional defects which the second classifier classifies as minority; training, upon the training set, subset, and differentiators, an engine obtaining a confidence level that a defect belongs to the majority class; applying the engine to second defects classified to the majority class, to obtain a confidence level of classifying each defect to the majority class; and outputting defects having a low confidence level.

Abstract: A method for printing on a substrate includes printing a support structure by printing a liquid precursor material and curing the liquid precursor material, positioning a substrate within the support structure, printing one or more anchors on the substrate and the support structure by printing and curing the liquid precursor material to secure the substrate to the support structure, and printing one or more device structures on the substrate while anchored by printing and curing the liquid precursor material.

Abstract: Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiO2 on SiNx films, embodiments in this disclosure use a thermal combustion of a ternary mixture of H2+O2+N2O to gain SiO2 out of Si containing compounds. Using this mixture provides a lower growth in comparison with using only H2 and O2, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiO2 oxidation layers, specifically for ONO replacement tunneling gate formation.

Abstract: A resistive random-access memory (ReRAM) device may include a thermally engineered layer that is positioned adjacent to an active layer and configured to act as a heat sink during filament formation in response to applied voltages. The thermally engineered layer may act as one of the electrodes on the ReRAM device and may be adjacent to any side of the active layer. The active layer may also include a plurality of individual active layers. Each of the active layers may be associated with a different dielectric constant, such that the middle active layer has a dielectric constant that is significantly higher than the other two surrounding active layers.

Abstract: Exemplary semiconductor processing methods may include forming a seasoning film on a heater of a processing chamber by a first deposition process. The method may include performing a hardmask deposition process in the processing chamber. The method may include cleaning the processing chamber by a first cleaning process. The method may include monitoring a gas produced during the first cleaning process. The method may include cleaning the processing chamber using a second cleaning process different from the first cleaning process. The method may also include monitoring the gas produced during the second cleaning process.

Abstract: Devices comprising a resistance-switching polymer film are described. Also described are methods of making the devices comprising the resistance-switching polymer film.

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body along a first surface of the lid plate. The lid plate may define a plurality of apertures through the lid plate. The lid plate may further define a recess about each aperture of the plurality of apertures in the first surface of the lid plate. Each recess may extend partially through a thickness of the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures. Each recess may receive at least a portion of one of the lid stacks of the plurality of lid stacks. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region.

Abstract: Methods of depositing a diamond layer are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which nanocrystalline diamond deposited on a substrate, wherein the processing methods result in a nanocrystalline diamond hard mask having high hardness.