Abstract: A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.

Abstract: A method and system for estimating context offsets for run-to-run control in a semiconductor fabrication facility is described. In one embodiment, contexts associated with a process are identified. The process has one or more threads, and each thread involves one or more contexts. A set of input-output equations describing the process is defined. Each input-output equation corresponds to a thread and includes a thread offset expressed as a summation of individual context offsets. A state-space model is created that describes an evolution of the process using the set of input-output equations. The state-space model allows to estimate individual context offsets.

Abstract: A method of manufacturing a high surface area per unit weight carbon electrode includes providing a substrate, depositing a carbon-rich material on the substrate to form a film, and after the depositing, activating the carbon-rich material to increase the surface area of the film of carbon-rich material. Due to the activation process being after deposition, this method enables use of low cost carbon-rich material to form a carbon electrode in the capacitor. The electrode may be used in capacitors, ultracapacitors and lithium ion batteries. The substrate may be part of the electrode, or it may be sacrificial—being consumed during the activation process. The carbon-rich material may include any of carbonized material, carbon aerogel and metal oxides, such as manganese and ruthenium oxide. The activation may include exposing the carbon-rich material to carbon dioxide at elevated temperature, in the range of 300 to 900 degrees centigrade.

Abstract: A laser scribing device is provided which comprises at least a laser light source. The laser light source may generate a laser beam for scribing cell lines to form a patterned solar cell module. Furthermore, the laser may emit a light beam for generating a light spot on the surface of the solar cell module. The light beam may be modulated compared with the light beam used for the scribing process. By means of the light spot a particular region of the active area of the solar cell module may be illuminated, and the voltage VOC (L) may be measured at a voltage measurement device. The voltage measurement device is connected between the negative contact area and the positive contact area of the solar cell module. The measured voltage VOC (L) depends on the location of the laser spot on the solar cell module and the intensity of the laser spot.

Abstract: Methods and apparatuses for presenting multivariate fault contributions in a user interface are described. A user interface is provided to illustrate a fault for a sample manufactured by a process containing multiple variables, each having at least two components. The user interface presents one group of components of the multiple variables in a first axis and a second group of components of the multiple variables in a second axis and graphically illustrates contributions to the fault associated with the multiple variables by associating a contribution of each component in the one group of components of the multiple variables to each corresponding component in the second group of components of the multiple variables.

Abstract: The present invention relates to a method for manufacturing a backside contact of a semiconductor component, in particular, of a solar cell, comprising a metallic layer on the backside of a substrate in a vacuum treatment chamber, and the use of a vacuum treatment system for performing said method. Through this method and its use, in particular silicon based solar cells, can be provided with a back contact in a simple manner in a continuous process sequence, wherein the process sequence can be provided particularly efficient and economical, since no handling systems for rotating the substrate are required, and in particular silk screening steps can be dispensed with.

Abstract: A method of fabricating a component for a substrate processing chamber involves providing a preform having internal and external surfaces, and providing a mandrel having a textured surface with a pattern of textured features comprising protrusions and depressions. The internal surface of the preform component is contacted with the textured surface of mandrel, and a pressure is applied to the external surface of the preform. The pressure is sufficiently high to plastically deform the preform over the textured surface of the mandrel to form a component having a textured internal surface comprising the pattern of textured feature that are shaped and sized to adhere process residues generated in the processing of substrates.

Abstract: Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting a reference spectrum. The reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectrum is empirically selected for particular spectrum-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum-based endpoint logic. The method includes obtaining a current spectrum. The current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. The determining is based on the reference and current spectra.

Abstract: A morphological operation is applied to an SEM image to obtain a idealized image, and the idealized image is used to detect a defect in a subject of the SEM image. The defect is detected by subtraction of the idealized image from the original image. Morphological operations are used also to entrance the visibility of defects or to check for irregularities in patterns. Other described methods comprise: growing a flow from seed points in the image, in order to define maps in which particles can be identified; checking for separation of objects in the image by growing flows from seed points located on the objects; segmenting the image into supposed identical objects and applying statistical methods to identify the defective ones.

Abstract: A method and apparatus for fabricating large scale PV cell and solar module/panel is disclosed. The method includes designing a PV cell wiring scheme for a number of PV cells and patterning a plurality of features on a large size silicon sheet. A number of large scale silicon sheets, having a number of PV cells on each silicon sheet, can be bonded to a wiring plane to directly manufacture into a solar module/panel. Each PV cell on the solar module is then isolated. Methods of the invention greatly cut down the cost of solar module/panel manufacturing and PV cell assembly.

Abstract: A method for focusing a scanning microscope, including scanning a primary charged particle beam across first sites of a reference die of a wafer, detecting a secondary beam emitted from the sites, and computing first focus scores for the sites based on the secondary beam. The method includes scanning the primary beam across second sites of a given die of the wafer while modulating a focal depth of the primary beam, the reference die and the given die having congruent layouts, the second sites corresponding vectorially in location with the first sites, and detecting the secondary beam emitted from the second sites in response to the primary beam. The method also includes computing second focus scores for the second sites based on the detected secondary beam emitted therefrom, and determining an exact focus of the primary beam for the second sites using the first and the second focus scores.

Abstract: Methods and apparatus for categorizing defects on workpieces, such as semiconductor wafers and masks used in lithographically writing patterns into such wafers are provided. For some embodiments, by analyzing the layout in the neighborhood of the defect, and matching it to similar defected neighborhoods in different locations across the die, defects may be categorized by common structures in which they occur.

Abstract: A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.

Abstract: A method of fabricating on a substrate an optical detector in an optical waveguide, the method involving: forming at least one layer on a surface of the substrate, said at least one layer comprising SiGe; implanting an impurity into the at least one layer over a first area to form a detector region for the optical detector; etching into the at least one layer in a first region and a second region to form a ridge between the first and second regions, said ridge defining the optical detector and the optical waveguide; filling the first and second regions with a dielectric material having a lower refractive index than SiGe; and after filling the first and second regions with the dielectric material, removing surface material to form a planarized upper surface.

Abstract: A substrate comprising a resist layer overlying a dielectric feature, is processed in a substrate processing chamber comprising an antenna, and first and second process electrodes. A process gas comprising CO2 is introduced into the chamber. The process gas is energized to form a plasma by applying a source voltage to the antenna, and by applying to the electrodes, a first bias voltage having a first frequency of at least about 10 MHz and a second bias voltage having a second frequency of less than about 4 MHz. The ratio of the power level of the first bias voltage to the second bias voltage is sufficient to obtain an edge facet height of the underlying dielectric feature that is at least about 10% of the height of the dielectric feature.

Abstract: Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group Si4X8, Si4X10, Si5X10, and Si5X12, where X is independently a hydrogen or halogen.

Abstract: A method for focus error corrections. The method includes: determining a focus scheme in response to: a spatial relationship between an upper surface of at least a first portion of a substantially transparent upper layer of an inspected object and between an upper surface of at least a first portion of a reflective layer of the inspected object; wherein the reflective layer is positioned below the transparent upper layer, and a position of at least one height differentiated narrow feature of inspected object; wherein during a scan of each height differentiated narrow feature a focus error signal change rate well exceeds a focus correction rate of a focus error correction unit; and applying the focus scheme while scanning at least a portion of the inspected object.

Abstract: Methods and apparatus for categorizing defects on workpieces, such as semiconductor wafers and masks used in lithographically writing patterns into such wafers are provided. For some embodiments, by analyzing the layout in the neighborhood of the defect, and matching it to similar defected neighborhoods in different locations across the die, defects may be categorized by common structures in which they occur.

Abstract: Systems, apparatus and methods for transporting substrates between system components of an electronic device manufacturing system are provided. The systems and apparatus include an electrostatic end effector having a base, an electrode pair on the base, and spacer members for spacing the substrate from the electrode pairs to provide a gap between the electrode pair and the substrate. Methods of the invention as well as numerous other aspects are provided.

Abstract: Systems, apparatus and methods for the rapid exchange of work material in a facility processing substrates (e.g., LCD panels, solar panels, semiconductor wafers, or the like) are disclosed. The system may include load ports associated with a process tool, local storage units, and a work material exchange apparatus adapted to rapidly exchange work material at the ports, units, or other exchange locations. The work material exchange apparatus may include two or more end effectors coupled to one or more actuator members and which may be adapted to rapidly exchange two or more carriers containing work material at an exchange location.