Abstract: Solar cell modules and methods for making solar cell modules are disclosed. In one or more embodiments of the invention, a buss is adhered to the solar cell modules using a plurality of conductive adhesive drops.

Abstract: Methods and apparatus for processing substrates and controlling the heating and cooling of substrates are described. A radiation source providing radiation in a first range of wavelengths heats the substrate within a predetermined temperature range, the substrate being absorptive of radiation in a second range of wavelengths within the first range of wavelengths and within the predetermined temperature rang. A filter prevents at least a portion of radiation within the second wavelength range from reaching the substrate.

Abstract: Embodiments of the present invention pertain to methods of forming patterned features on a substrate having an increased density (i.e. reduced pitch) as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask while also allowing both the width of the patterned features and spacing (trench width) between the patterned features to vary within an integrated circuit.

Abstract: A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.

Abstract: A method of treating a metal surface of a portion of a substrate processing system to lower a defect concentration near a processed surface of a substrate includes forming a protective coating on the metal surface, wherein the protective coating includes nickel (Ni) and a fluoropolymer. Forming the protective coating on the metal surface can further include forming a nickel layer on the metal surface, impregnating the nickel layer with a fluoropolymer, and removing fluoropolymer from the surface leaving a predominantly nickel surface so the fluoropolymer is predominantly subsurface. A substrate processing system includes a process chamber into which a reactant gas is introduced, a pumping system for removing material from the process chamber, a first component with a protective coating, wherein the protective coating forms a surface of the component which is exposed to an interior of the substrate processing chamber or an interior of the pumping system.

Abstract: An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.

Abstract: A method for detecting hidden defects and patterns, the method includes: receiving an object that comprises an opaque layer positioned above an intermediate layer; defining an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illuminating the object with a primary electron beam; and generating images from electrons that arrive to a spectrometer having an energy within the energy band.

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.

Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

Abstract: In a first aspect, a wafer loading station adapted to exchange wafer carriers with a wafer carrier transport system comprises a biasing element adapted to urge the end effector of the wafer loading station away from a moveable conveyor of the wafer carrier transport system upon the occurrence of a unscheduled event such as a power failure or an emergency shutdown. In a second aspect, an uninterruptible power supply commands a controller to cause the wafer carrier handler to retract the end effector from the wafer carrier transport system upon the occurrence of the unscheduled event, and provides the power necessary for the same. Numerous other aspects are provided.

Abstract: Apparatus for imaging a surface, including scanning optics, which are configured to scan and focus one or more traveling beams onto the surface so as to form one or more traveling spots thereon. The apparatus also includes collection optics, which are arranged to collect radiation scattered from the one or more traveling spots and to focus the radiation to form one or more image spots traveling along a line. The apparatus also has a detecting assembly, which consists of a detector which is configured to generate a signal in response to the one or more traveling image spots, and a detector entry port interposed between the collection optics and the detector, which is coincident with the line. The apparatus also includes phase and/or polarization altering elements for the traveling beams.

Abstract: A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.

Abstract: Embodiments of the invention provide a method for forming a material on a substrate during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a method is provided which includes flowing at least one process gas through at least one conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, sequentially pulsing at least one chemical precursor into the process gas and igniting a plasma from the process gas to deposit a material on the substrate. In one example, the circular gas flow pattern has circular geometry of a vortex, a helix, a spiral, or a derivative thereof. Materials that may be deposited by the method include ruthenium, tantalum, tantalum nitride, tungsten or tungsten nitride. Other embodiments of the invention provide an apparatus configured to form the material during the PE-ALD process.

Abstract: In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.

Abstract: Embodiments of an ink jet printing system include a motion stage adapted to move a substrate having a display object in a printing direction and a first printing assembly mounted over the motion stage including a set of print heads aligned and arranged consecutively in the printing direction such that the display object moves under the print heads sequentially. Embodiments of a method of ink jet printing include moving a substrate under the print heads of printing assembly sequentially in a printing direction, activating alternate ink jetting channels within each print head of the first printing assembly, activating corresponding channels within adjacent print heads in the first printing assembly alternately, and depositing ink in alternating sub-pixels within one or more pixels on the substrate.

Abstract: An improved apparatus and method is provided for storing semiconductor wafer carriers, and for loading wafers or wafer carriers to a fabrication tool. The apparatus preferably provides an elevated port for receipt of wafer carriers from an overhead factory transport, allows for local interconnection among a plurality of the inventive apparatuses, and enables independent loading of the factory load port and the tool load port. An inventive wafer handling method which divides a lot of wafers into sublots and distributes the sublots among tools configured to perform the same process is also provided.

Abstract: The present invention relates to a thermal reactor apparatus used to treat industrial effluent fluids, for example waste effluent produced in semiconductor and liquid crystal display manufacturing processes. Specifically, the present invention relates to improved monitoring and control features for the thermal reactor apparatus, including a flame sensing device, an intrinsically safe flammable gas sensing device, and a sequential mode of operation having built-in safety redundancy. The improved monitoring and control features ensure the safe and efficient abatement of waste effluent within the thermal reactor apparatus.

Abstract: Methods are disclosed of fabricating an optical assembly. An active optical element is disposed near or on a first surface of a slab of optical material. A passive optical element is formed on a second surface of the slab, with the second surface being substantially parallel to the first surface. An optical axis of the passive optical element is aligned with an optical path between the passive optical element and an active region of the active optical element using a lithographic alignment process.

Abstract: The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.

Abstract: A retaining ring has a generally annular body with a top surface, a bottom surface, an inner diameter surface, and an outer diameter surface. The outer diameter surface includes an outwardly projecting flange having a lower surface, and the bottom surface includes a plurality of channels.