Abstract: A system and method for inspecting an article, the system includes a spatial filter that is shaped such as to direct output beams towards predefined locations and an optical beam directing entity, for directing the multiple output beams toward multiple detector arrays. The method includes spatially filtering multiple input light beams to provide substantially aberration free output light beams; and directing the multiple output beams by an optical beam directing entity, toward multiple detector arrays.

Abstract: A polishing apparatus is described. The polishing apparatus includes a rotatable platen, a drive mechanism to incrementally advance a polishing sheet having a polishing surface in a linear direction across the platen, a subpad on the platen to support the polishing sheet, the subpad having a groove formed therein, and a vacuum source connected to the groove of the subpad and configured to apply a vacuum sufficient to pull portions of the polishing sheet into the groove of the subpad to induce a groove in the polishing surface.

Abstract: Methods and structures are disclosed demultiplexing optical signals transmitted over an optical fiber into a silicon substrate and to multiple detectors. The silicon substrate has two spaced-apart surfaces and a diffractive element disposed adjacent to one of the surfaces. Each of the optical signals corresponds to one of multiple wavelengths. The optical signals are directed into the silicon substrate along a path through the first surface to be incident on the diffractive element. The path is oriented generally normal with the first surface and/or with the diffractive element, which angularly separates the optical signals such that each of the wavelengths traverses through the substrate in a wavelength dependent direction to the first surface. Each optical signal is steered from the first surface towards the second surface to be incident on different optical elements that direct them generally normal to the first surface to be incident on one of the detectors.

Abstract: Projections 22 of the blade 16 provided on a blade surface in a wafer-loading region 18b of a body 18 support a wafer W loaded on the blade surface 18a. Since the projections 22 have microgrooves formed by surface roughening the wafer W is retained on the projections 22 with a suppressed displacement. The blade 16 has a simple structure that retains the wafer W without vacuum suction and has no receiving hole to retain the wafer W in the body 18 of the blade 16. This can effectively prevent formation of defects on the wafer W.

Abstract: Methods for compensating for a thermal profile in a substrate heating process are provided herein. In one embodiment, a method of processing a substrate includes determining an initial thermal profile of a substrate resulting from a process; imposing a compensatory thermal profile on the substrate based on the initial thermal profile; and performing the process to create a desired thermal profile on the substrate. In other embodiments of the invention, the initial substrate thermal profile is compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. In another embodiment, the heat provided by an edge ring to the substrate may be controlled either prior to or during the substrate heating process.

Abstract: A kinematic pin and a substrate carrier adapted to deter dislodgment of the substrate carrier from the kinematic pin are provided. A shear member on the kinematic pin interacts with a shear feature of the substrate carrier to deter lateral movement of the substrate carrier relative to the kinematic pin. A substrate carrier handler that employs the kinematic pin is also provided.

Abstract: Apparatus and techniques for automated optical inspection (AOI) utilizing image scanning modules with multiple objectives for each camera are provided. A scanning mechanism includes optical components to sequentially steer optical signals from each of the multiple objectives to the corresponding camera.

Abstract: A method is provided for processing a substrate surface by delivering a first gas mixture comprising a first organosilicon compound, a first oxidizing gas, and one or more hydrocarbon compounds into a chamber at deposition conditions sufficient to deposit a first low dielectric constant film on the substrate surface. A second gas mixture having a second organosilicon compound and a second oxidizing gas is delivered into the chamber at deposition conditions sufficient to deposit a second low dielectric constant film on the first low dielectric constant film. The flow rate of the second oxidizing gas into the chamber is increased, and the flow rate of the second organosilicon compound into the chamber is decreased to deposit an oxide rich cap on the second low dielectric constant film.

Abstract: The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an epitaxial film on at least a portion of the substrate. Then, the substrate is exposed to an etchant so as to etch the epitaxial film and any other films formed during the deposition. The deposition and etching may be repeated until a film of a desired thickness is achieved. Numerous other aspects are disclosed.

Abstract: A method and apparatus for conditioning is provided. In one embodiment, a conditioning disk includes a plurality of conditioning elements each having an abrasive working surface, and a flexible foundation having the conditioning elements coupled thereto. The flexible foundation has physical properties that retain the working surfaces in a substantially coplanar orientation with respect to the pad surface.

Abstract: Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.

Abstract: A method for operating an electronic device manufacturing system is provided, including: introducing an inert gas into a process tool vacuum pump at a first flow rate while the process tool is operating in a process mode; and introducing the inert gas into the process tool vacuum pump at a second flow rate while the process tool is operating in a clean mode. Numerous other embodiments are provided.

Abstract: A method for providing regular line patterns using interference lithography and sidewall patterning techniques is provided according to one embodiment. The method comprising may include producing regularly spaced parallel lines on a template using interference lithography techniques and then depositing sidewalls on the longitudinal sides of the regularly spaced parallel lines using sidewall patterning techniques. Various deposition and etching steps may also be included. The embodiments of the invention may provide regular line patterns with a line density half the interference lithography line density. Various lithography techniques may also be used to crop rounded connecting resulting from the sidewall patterning and/or to alter portions of the line pattern.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.

Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

Abstract: In a first aspect, a first apparatus is provided for use in supporting a substrate carrier. The first apparatus includes an overhead transfer flange adapted to couple to a substrate carrier body and an overhead carrier support. The overhead transfer flange has a first side and a second side opposite the first side that is wider than the first side. Numerous other aspects are provided.

Abstract: A web coating apparatus with a vacuum chamber (1) has between a rear wall (18) and at least one removable closing plate (22), housing member (20) with a planar cover (10), and at least one guide roll (12, 13, 14, 15) and a coating cylinder (9) with an axle (A) and at least one coating source (39a, 39b, 39c) are arranged in the vacuum chamber (1). To reduce structural height and width and to achieve an easily viewable and controllable web path while avoiding particle formation in the reach of the coating cylinder (9), provision is made pursuant to the invention that the ends of the at least one guide roll (12, 13, 14, 15) and of the coating cylinder are affixed by supporting elements (16, 17 and 19) with bearings to the cover (10) and that the cavity in the vacuum chamber (1) under the coating cylinder (9) is kept free of supporting elements.

Abstract: A method and apparatus for diagnosing faults. A fault is detected. One or more process variables that contributed to the fault are determined. A relative contribution of each of the one or more process variables is determined. A determination is made as to which fault signatures match the fault, a match occurring when the relative contributions of the one or more process variables are within relative contribution ranges of the matching fault signature. Each fault signature is associated with at least one fault class.

Abstract: Disclosed are systems for achieving improved film properties by introducing additional processing parameters, such as a movable position for the microwave source and pulsing power to the microwave source, and extending the operational ranges and processing windows with the assistance of the microwave source. A coaxial microwave antenna is used for radiating microwaves to assist in physical vapor deposition (PVD) or chemical vapor deposition (CVD) systems. The system may use a coaxial microwave antenna inside a processing chamber, with the antenna being movable between a substrate and a plasma source, such as a sputtering target, a planar capacitively generated plasma source, or an inductively coupled source. In a special case when only a microwave plasma source is present, the position of the microwave antenna is movable relative to a substrate. The coaxial microwave antenna adjacent to the plasma source can assist the ionization more homogeneously and allow substantially uniform deposition over large areas.