Abstract: The present invention refers to a method for coating a substrate, a coating apparatus for carrying out the method and a handling module for coating apparatuses. The handling module comprises a moveable support for a substrate to be coated the support being movable between at least two positions. Further, a mask arranging device for at least one of attaching and detaching a mask to the substrate, and a mask alignment device for aligning the mask with respect to the substrate are provided for, wherein the mask alignment device is attached to the movable support so as to be movable together with the support. Alternatively, the handling module comprises a vacuum chamber, a moveable support for a substrate to be coated, the support being arranged in the vacuum chamber and being rotatable between at least two positions, wherein a mask arranging device for at least one of attaching and detaching a mask to the substrate is arranged within the vacuum chamber of the handling module.

Abstract: The present invention refers to a method for coating a substrate, a coating apparatus for carrying out the method and a handling module for coating apparatuses. The handling module comprises a moveable support for a substrate to be coated the support being movable between at least two positions. Further, a mask arranging device for at least one of attaching and detaching a mask to the substrate, and a mask alignment device for aligning the mask with respect to the substrate are provided for, wherein the mask alignment device is attached to the movable support so as to be movable together with the support. Alternatively, the handling module comprises a vacuum chamber, a moveable support for a substrate to be coated, the support being arranged in the vacuum chamber and being rotatable between at least two positions, wherein a mask arranging device for at least one of attaching and detaching a mask to the substrate is arranged within the vacuum chamber of the handling module.

Abstract: The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.

Abstract: A method for defect detection includes: (i) scanning at least one wafer by a monitoring system and providing defect size information for each defect that belongs to a group of defects; (ii) scanning the at least one wafer by a wafer inspection system that includes multiple detectors and providing a set of defect detection signals for each defect of the group, wherein the wafer inspection system is characterized by lower resolution than the monitoring system; (iii) classifying the defects to defect classes; (iv) determining multiple relationships between defect types, defect sizes and sets of detection signals; (v) scanning a second wafer by the wafer inspection tool; and (vi) generating, for multiple defects, second wafer defect size information in response to the determined relationships and in response to multiple sets of detection signals generated during the scanning of the second wafer.

Abstract: A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.

Abstract: An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

Abstract: The invention provides a method that includes the stages of: (i) receiving design information representative of a portion of an object that includes sub micron measurement targets, (ii) processing the received design information to provide a large number of measurement targets; and (iii) associating target measurement parameters to each of large number of measurement targets. The invention provides a system that includes: (i) an interface for receiving design information representative of a portion of a layer of an object that includes sub micron measurement targets; and (ii) a processor, coupled to the interface, for processing the received design information to provide a large number of measurement targets; and for associating target measurement parameters to each of large number of measurement targets.

Abstract: The voltage of a wafer on the pedestal of an RF plasma reactor is instantly determined from the applied bias current and the applied bias voltage sampled during plasma processing of the wafer using a pair constants. Prior to plasma processing of the wafer, a determination is made of first and second constants based upon electrical characteristics of a transmission line through which RF power is coupled to the pedestal. During plasma processing of the wafer, the wafer voltage is determined by performing the steps of sampling an RF input current and an RF input voltage at the impedance match circuit; multiplying the RF input voltage by the first constant to produce a first product; multiplying the RF input current by the second constant to produce a second product; and computing a sum of the first and second products.

Abstract: Apparatus for reducing speckle, including a first coherence-reducing component, having a first array of transparent first elements arranged to receive different, respective first portions of a collimated light beam that is incident on the first component, the first elements generating different, respective optical lengths with respect to the light beam passing therethrough and outputting the respective first portions as respective first collimated sub-beams. The apparatus further includes a second coherence-reducing component, having a second array of transparent second elements arranged to receive different, respective second portions of each of the first collimated sub-beams of the light beam, the second elements generating different, respective optical lengths with respect to the light beam passing therethrough and outputting the respective second portions as respective second collimated sub-beams.

Abstract: Apparatus for inspecting a surface of a sample, including a detector and folding optics. The folding optics are configured to receive radiation arising from a first region of the surface and from a second region of the surface. The first region and the second region have a first spatial relationship with respect to each other. The folding optics form from the radiation a first image of the first region and a second image of the second region on the detector, wherein the first image is a linear transformation of the first region and the second image is the linear transformation of the second region. The first image and the second image have a second spatial relationship, different from the linear transformation of the first spatial relationship, with respect to each other.

Abstract: A method and apparatus for detecting faults. A set of data samples is received, the set of data samples including multiple process variables. One or more multivariate statistical models are adapted, wherein adapting includes applying a change to at least one univariate statistic of the one or more multivariate statistical models if the change is greater than a threshold value. The one or more multivariate statistical models are used to analyze subsequent process data to detect faults.

Abstract: A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and introducing an organometallic precursor, a particle suppression compound and at least a second precursor to the reaction chamber. The second precursor reacts with the organometallic precursor to form a nucleation layer on the substrate. Also, a method of suppressing parasitic particle formation during formation of a III-V nitride layer is described. The method includes introducing a group III metal containing precursor to a reaction chamber. The group III metal precursor may include a halogen. A hydrogen halide gas and a nitrogen containing gas are also introduced to the reaction chamber. The nitrogen containing gas reacts with the group III metal precursor to form the III-V nitride layer on the substrate.

Abstract: A method and apparatus for matching impedance magnitude and impedance phase for an acoustic-wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate.

Abstract: A method of etching organic low-k dielectric materials is provided herein. In one embodiment, a method of etching organic low-k dielectric materials includes placing a substrate comprising an exposed organic low-k dielectric material in an etch reactor; supplying a process gas comprising an oxygen-containing gas, a nitrogen-containing gas, and methane (CH4); and forming a plasma from the process gas to etch the organic low-k dielectric material. The organic low-k dielectric material may include polymer-based low-k dielectric materials, photoresists, or organic polymers. The oxygen-containing gas may be oxygen (O2) and the nitrogen-containing gas may be nitrogen (N2).

Abstract: Methods and apparatus for efficiently operating an electronic device manufacturing system are provided. In one aspect, an electronic device manufacturing system is provided, including: a process tool; a process tool controller linked to the process tool, wherein the process tool controller is adapted to control the process tool; a first sub-fab auxiliary system linked to the process tool controller; wherein the first sub-fab auxiliary system is adapted to operate in a first operating mode and a second operating mode; and wherein the process tool controller is adapted to cause the first sub-fab auxiliary system to change from the first operating mode to the second operating mode.

Abstract: This invention relates to a method of scanning a substrate through an ion beam in an ion implanter to provide uniform dosing of the substrate. The method comprises causing relative motion between the substrate and the ion beam such that the ion beam passes over all of the substrate and rotating the substrate substantially about its centre while causing the relative motion. Rotating the substrate while causing the relative motion between the substrate and the ion beam has several advantages including avoiding problematic angular effects, increasing uniformity, increasing throughput and allowing a greater range of ion beam profiles to be tolerated.

Abstract: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.