Abstract: Methods and apparatus for increasing the processing throughput of multiple lots of semiconductor wafers through a cluster tool while maintaining a constant wafer history for each lot are provided. A first lot of wafers containing one through n-th wafers is introduced into a cluster tool containing one or more processing chambers. The first lot of wafers is processed for a first time period. A second lot of wafers containing one through n-th wafers is introduced into the cluster tool prior to completion of the first time period, wherein the second lot is introduced so as to minimize a time gap between the n-th wafer of the first lot of wafers and the first wafer of the second lot of wafers while maintaining a first constant wafer history for each wafer within the first lot and maintaining a second constant wafer history for each wafer in the second lot.

Abstract: Method and systems are provided for monitoring and controlling one or more abatement systems. One or more abatement systems may be represented on a display alone with one or more effluent flows from processing tools. A selected effluent flow configuration is received. An interface manifold is controlled to implement the selected effluent flow configuration. Numerous other aspects are provided.

Abstract: In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 ? and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A method for processing a workpiece in a plasma reactor chamber by applying RF source power to inner and outer source power applicators, and introducing a process gas into the reactor while rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the plasma distribution is nearly symmetrical, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution is nearly uniform.

Abstract: An apparatus and method for manufacturing and refurbishing a conductive polishing pad assembly for performing an electrochemical process on a substrate is disclosed. The conductive polishing pad assembly is formed using a contact surface as a foundation that is coated with a metallic coating to create a conductive contact surface. In one embodiment, the metallic coating is a high purity tin/zinc alloy that is sprayed on the contact surface. The contact surface contains abrasive particles while the metallic coating provides at least conductive qualities to the contact surface.

Abstract: In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer.

Abstract: According to one aspect of the present invention, a method and apparatus for cleaning a semiconductor substrate is provided. The method may include supporting a semiconductor substrate, the semiconductor substrate having a surface, and dispensing an amount of semiconductor substrate processing liquid onto the surface of the semiconductor substrate, the amount of semiconductor substrate processing liquid being such that substantially none of the semiconductor substrate processing liquid flows off the surface of the semiconductor substrate. The semiconductor substrate processing fluid may form a standing puddle on the surface of the semiconductor substrate. The semiconductor substrate may be rotated while the semiconductor substrate processing liquid is on the surface of the semiconductor substrate such that substantially all of the amount of semiconductor substrate processing liquid remains on the surface of the semiconductor substrate during said rotation.

Abstract: A method for writing a master image on a substrate includes dividing the master image into a matrix of frames, each frame including an array of pixels defining a respective frame image in a respective frame position within the master image. An electron beam is scanned in a raster pattern over the substrate, while shaping the electron beam responsively to the respective frame image of each of the frames as the electron beam is scanned over the respective frame position, so that in each frame, the electron beam simultaneously writes a multiplicity of the pixels onto the substrate.

Abstract: A flame sensor apparatus for use with a flame heated thermal abatement reactor is provided, including a flame sensor adapted to sense a flame within the thermal abatement reactor; and a shutter adapted to selectively block the transmission of radiation from the flame to the flame sensor.

Abstract: A coating system or encapsulation module 1 is coupled with a substrate handling module 2, wherein substrates 3a to be encapsulated and substrates 3b that already have an encapsulation layer stack deposited thereon are handled in a nitrogen atmosphere. The substrate handling module 2 comprises a magazine 4 for storing substrates 3a to be coated and encapsulated substrates 3b. A handling device 5 unloads the substrates 3a to be coated from the magazine 4 and loads encapsulated substrates 3b into the magazine 4. The encapsulation module 1 has a first ink-jet coating chamber 10a. In said first ink-jet coating chamber 10a a photoresist layer is deposited on the substrate 3a by means of an ink-jet printing method. The ink-jet printing method is carried out in an atmosphere of about 10 mbar. Then the substrate 3a is transported into a first CVD (chemical vapor deposition) coating chamber 11a. In the CVD coating chamber 11a a first silicon nitride layer is deposited on the substrate 3a, i.e.

Abstract: Apparatus and methods are provided that are adapted to match the impedance of an electrical load to an impedance of an electrical signal generator. The invention includes providing a plurality of electrical components adapted to collectively match the impedance of the electrical load to the impedance of the electrical signal generator. The electrical components are arranged symmetrically and concentrically about an axis. Additionally, the invention may also include a first connector adapted to electrically couple the electrical signal generator to the electrical components. Additionally, the invention may also include a second connector adapted to electrically couple the load to the electrical components. Numerous other aspects are provided.

Abstract: Inspection system and method for high-throughput inspection, the system and method is capable to generate and sense transmitted and/or reflected short duration beams. According to one embodiment of the invention the transmitted and reflected short duration beams are generated and sensed simultaneously thus provide a reflected image and a transmitted image simultaneously. The reflected and transmitted short duration radiation beams are manipulated either in the frequency domain or are distinctly polarized such that they are directed to the appropriate area sensors. According to another aspect of the invention the system changes the manipulation of a short duration beam of radiation to selectively direct the short duration beam to distinct area sensors.

Abstract: Monotomic dopant ions for ion implantation are supplied from vapour of a species containing plural atoms of the desired dopant. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the vapour species to produce monatomic dopant ions in the plasma for implantation.

Abstract: A method and system for the compensation of nonuniformity among a plurality of light sensing diodes adapted to convert light to a current output. A system embodiment includes a plurality of trans-impedance amplifier circuits, each trans-impedance amplifier circuit having an op-amp, and an impedance connecting an output of the op-amp to a first input of the op-amp, and a plurality of variable voltage source. The current output of each sensing diode is coupled to a corresponding trans-impedance amplifier circuit by an electrical connection to the first input of corresponding op-amp. A second input of the corresponding op-amp is coupled to a corresponding adjustable voltage source. The output of the corresponding op-amp is a signal responsive to a sensing voltage, and to a voltage signal provided by the corresponding adjustable voltage source, the sensing voltage being responsive to the current output of a corresponding sensing diode.

Abstract: A method and apparatus for sputter depositing a film on a substrate is disclosed. By providing a superimposed RF bias over a DC bias, plasma ionization is increased. In order to increase the resistive load across the substrate, an impedance circuit is provided between the substrate and the susceptor. The impedance circuit allows an insulating substrate to effectively function as an anode and connect to ground.

Abstract: A method and system for defect localization including (i) receiving a test structure that includes at least one conductor that is at least partially covered by an electro-optically active material; (ii) providing an electrical signal to the conductor, so as to charge at least a portion of the conductor; and (iii) imaging the test structure to locate a defect.

Abstract: A method for fabricating point contacts to the rear surface of a silicon solar cell by coating the rear surface with a masking layer and a laser absorptive layer and directing laser radiation to the rear surface to form openings therein after which doping material is applied through the openings and contacts are applied. The doping is preferably performed by plasma immersion ion implantation.

Abstract: The present invention concerns a thin-film encapsulation structure for electronic devices with organic substances, especially OLEDs or other organic optoelectronic devices as well as corresponding components and a process for the production with a primary, inorganic barrier layer (5), which is directly arranged on the device or the surface to be encapsulated; a planarization layer (6) arranged on the primary, inorganic barrier layer, the thickness of said planarization layer selected such that it is thicker than the simple value of the distance between highest peak and deepest valley of the surface of the primary barrier layer or the surface of the device under the primary barrier layer or the surface to be encapsulated, as well as a secondary barrier layer (14) arranged on the planarization layer.

Abstract: The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.