Abstract: A beam shaper has a light pipe fabricated of a material having a refractive index that provides total internal reflection within the light pipe. A first face accepts light and a second face releases light from the light pipe. The faces are orthogonal to an axis about which the light pipe is twisted and have different shapes. The area of the second face differs from an area of the first face by less than 25%.

Abstract: Methods and structures are disclosed demultiplexing optical signals transmitted over an optical fiber into a silicon substrate and to multiple detectors. The silicon substrate has two spaced-apart surfaces and a diffractive element disposed adjacent to one of the surfaces. Each of the optical signals corresponds to one of multiple wavelengths. The optical signals are directed into the silicon substrate along a path through the first surface to be incident on the diffractive element. The path is oriented generally normal with the first surface and/or with the diffractive element, which angularly separates the optical signals such that each of the wavelengths traverses through the substrate in a wavelength dependent direction to the first surface. Each optical signal is steered from the first surface towards the second surface to be incident on different optical elements that direct them generally normal to the first surface to be incident on one of the detectors.

Abstract: In one implementation, a method for etching a flash memory high-k gate stack on a workpiece is provided which includes etching a conductive material layer in a low temperature plasma chamber and etching a high-k dielectric layer in a high temperature plasma chamber. The workpiece is transferred between the low temperature plasma chamber and the high temperature plasma chamber through a vacuum transfer chamber connecting the low temperature plasma chamber and the high temperature plasma chamber. In one embodiment, an integrated etch station for etching a high-k flash memory structure is provided, which includes an etch chamber configured for plasma etch processing of a conductive material layer connected via a transfer chamber to an etch chamber configured for plasma etch processing of a high-k dielectric layer.

Abstract: An inductively coupled plasma reactor includes a coil antenna overlying the ceiling and coupled to an RF power source. The reactor further includes gas injection apparatus coupled to a process gas supply that comprises a supply of oxygen gas and a supply of a hydrogen-containing gas. A heated workpiece support in the chamber is configured to operate in a high temperature range including 700 degrees C. or higher.

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Abstract: An improved prober for an electronic devices test system is provided. The prober is “configurable,” meaning that it can be adapted for different device layouts and substrate sizes. The prober generally includes a frame, at least one prober bar having a first end and a second end, a frame connection mechanism that allows for ready relocation of the prober bar to the frame at selected points along the frame, and a plurality of electrical contact pins along the prober bar for placing selected electronic devices in electrical communication with a system controller during testing. In one embodiment, the prober is be used to test devices such as thin film transistors on a glass substrate. Typically, the glass substrate is square, and the frame is also square. In this way, “x” and “y” axes are defined by the frame.

Abstract: A substrate-handling robot which serves a processing tool such as a plating tool may be automatically controlled by a controller to perform a self-calibration procedure. As part of the procedure, an end effector of the robot is moved to interact with sensors provided on a calibration fixture that is positioned in a substrate placement location for which the calibration procedure is performed. The calibration fixture may have an opening formed therein to allow movement of the robot end effector within the calibration fixture. Sensor light beams generated by the sensors may interact with the end effector during the automatic calibration process so as to determine calibration data for the substrate placement location.

Abstract: A polishing system includes a platen, a carrier head to hold a surface of a substrate against a polishing pad on the platen, a monitoring module including a light source and a detector, an optical fiber having a proximate end coupled to the monitoring module and a distal end, and an optical head removably mounted in the platen. The optical head holds the distal end of the optical fiber to direct light through a window in the polishing pad to the surface of the substrate and receive reflected light from the surface of the substrate, and the optical head is configured to adjust a distance from the distal end of the fiber to the window.

Abstract: A substrate heater comprising a bake plate having an upper surface, a lower surface and a peripheral side surface extending between the upper and lower surfaces, the bake plate including at least one heating element, at least one temperature sensor and a plurality of wires including at least one wire coupled to the heating element and at least one wire coupled to the temperature sensor; a shield spaced apart from and generally surrounding the lower and peripheral side surfaces of the bake plate, the shield having an interior upper surface facing the lower surface of the bake plate, an interior side surface facing the peripheral side surface of the bake plate and a lower surface opposite the interior upper surface; a patterned signal layer formed on the lower surface of the shield, wherein the plurality of wires are electrically coupled to a corresponding plurality of signal traces formed in the patterned signal layer; and a connector, electrically coupled to the plurality of signal traces in the patterned sig

Abstract: A method of operating a multi-chamber module including a first chamber, a second chamber, and a dispense arm area positioned between the first chamber and the second chamber. The method includes flowing a process gas into the first chamber, the second chamber, and the dispense arm area. The method also includes exhausting a first gas from the first chamber using a first exhaust path in fluid communication with a shared exhaust, exhausting a second gas from the second chamber using a second exhaust path in fluid communication with the shared exhaust, and exhausting a third gas from the dispense arm area using a dispense arm area exhaust in fluid communication with the shared exhaust.

Abstract: Wafer supporting apparatus, including an electrostatic chuck for supporting the wafer. The apparatus further includes an electrostatic shield which is positioned in proximity to the chuck and the wafer, and a voltage source which is coupled to apply an electric field between the chuck and the wafer. The voltage source applies one or more potentials to the electrostatic shield so as to prevent penetration of particles to the wafer.

Abstract: Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solenoid is disposed near the apparatus to magnetize the plasma.

Abstract: A method for calibrating a metrology tool, the method includes: determining a relationship between an upper portion of a milled reference structural element and between a lower portion of the milled reference structural element; and defining a calibration parameter in response to the relationship. A metrology system that includes: a miller adapted to mill a reference structural element; and a measurement device adapted to determine a relationship between an upper portion of a milled reference structural element and between a lower portion of the milled reference structural element; wherein the metrology system is further adapted to define a calibration parameter in response to the relationship.

Abstract: Provided herein is a substrate processing system, which comprises a cassette load station; a load lock chamber; a centrally located transfer chamber; and one or more process chambers located about the periphery of the transfer chamber. The load lock chamber comprises double dual slot load locks constructed at same location. Such system may be used for processing substrates for semiconductor manufacturing.

Abstract: A target assembly composed of multiple target tiles bonded in an array to a backing plate of another material. The edges of the tile within the interior of the array are formed with complementary beveled edges to form slanted gaps between the tiles. The gaps may slant at an angle of between 10° and 55°, preferably 15° and 45°, with respect to the target normal. The facing sides of tiles may be roughened by bead blasting, for both perpendicular and sloping gaps. The area of the backing plate underlying the gap may be roughened or may coated or overlain with a region of the material of the target, for both perpendicular and sloping gaps.

Abstract: Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.

Abstract: A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.

Abstract: A method and apparatus for identifying a location of a short between two or more signal lines on a substrate having a plurality of thin film transistors and a plurality of pixels associated with the thin film transistors. The method includes locating the two or more signal lines having the short, locating one or more defective pixels disposed between the two or more signal lines having the short, and identifying the defective pixels as the location of the short.

Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

Abstract: An illumination system has a light source, an optical train, and a wavelength beam splitter. The optical train focuses light from the light source into a defined geometrical pattern on a surface. The wavelength beam splitter transmits light of a first wavelength and redirects light of a second wavelength. One of these wavelengths is included by the light from the light source, while the other is an emission wavelength generated by thermal excitation of the surface by the focused geometrical pattern.