Abstract: A method and apparatus for automatically providing a virtual sensor have been described. In one embodiment, a method for automatically providing a virtual sensor includes receiving a plurality of virtual sensor templates from a server. The method further includes selecting a virtual sensor template from the plurality of virtual sensor templates. The selected virtual sensor template has an algorithm to provide a desired functionality. The method further includes selecting at least one parameter to configure the selected virtual sensor template. The method further includes automatically creating a virtual sensor associated with the selected virtual sensor template.

Abstract: A flexible membrane for use in a carrier head has a generally circular main portion with a lower surface, an annular outer portion for connection to a base assembly, and an annular flap extending from the main portion on a side opposite the lower surface for connection to the base assembly. At least one surface of the flap has a surface texture to prevent adhesion.

Abstract: Embodiments described herein generally relate to methods for manufacturing flash memory devices. In one embodiment, a method for removing native oxides from a substrate is provided. The method includes transferring a substrate having an oxide layer disposed thereon into a first processing chamber, exposing the substrate to a plasma generated from a cleaning gas mixture, wherein the cleaning gas mixture comprises a hydrogen-containing gas and a fluorine-containing gas, heating the substrate to a temperature sufficient to remove the oxide layer from the substrate, transferring the substrate from the first processing chamber to a second processing chamber without breaking vacuum, and flowing a plasma containing substantially nitrogen-containing radicals into the second processing chamber to expose the substrate to nitrogen containing radicals.

Abstract: The present invention generally relates to an apparatus used for simulating spectrum of solar radiation and testing a photovoltaic device using the simulated spectrum of solar radiation. In one embodiment, the apparatus includes a light-source device configured to reproducing spectrum of solar radiation, the light-source device comprising a radiation plate divided into a plurality of cells, and each of the cells comprises a plurality of light-emitting diodes emitting at least two different wavelengths, and a substrate support disposed opposite to the light-source device. In one example, the plurality of light-emitting diodes emit a wavelength that is selected from the group consisting of colors blue, green, yellow, red, a first and a second color in infrared having different wavelengths with respect to each other.

Abstract: A charged particle beam focusing apparatus includes a charged particle beam generator configured to project simultaneously at least one non-astigmatic charged particle beam and at least one astigmatic charged particle beam onto locations on a surface of a specimen, thereby causing released electrons to be emitted from the locations. The apparatus also includes an imaging detector configured to receive the released electrons from the locations and to form images of the locations from the released electrons. A processor analyzes the image produced by the at least one non-astigmatic charged particle beam and in response thereto adjusts a focus of the at least one non-astigmatic charged particle beam.

Abstract: A method of processing a flexible substrate includes providing a flexible substrate having a polymerized surface; emitting an electron beam; exposing the polymerized surface to the electron beam; modifying the polymerized surface by the exposure to the electron beam; and depositing a barrier layer on the modified surface.

Abstract: Embodiments of the present invention generally provide methods for forming features or holes in a passivation layer without damaging the underlying solar cell substrate. A source laser beam is split into a first laser beam and a second laser beam. The first laser beam is modified to have a different wavelength than the source laser beam. The second laser beam is delayed for a predetermined time, and the first and second laser beams are delivered to a surface of the substrate.

Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

Abstract: A gas lance unit configured for a reactive deposition process with a plurality of spaced apart crucibles, wherein spaces are provided between the crucibles, is described. The gas lance unit includes a gas guiding tube having one or more outlets for providing a gas for the reactive deposition process, and a condensate guiding element for guiding a condensate, particularly an aluminum condensate, to one or more positions above the spaces.

Abstract: A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

Abstract: An electrostatic chuck includes an isolating substrate that surrounds at least one electrode; multiple protrusions having upper portions arranged to contact a wafer; and at least one discharging element positioned between the at least one electrode and the upper portions of the multiple protrusions; which discharging element, once coupled to a discharging circuit, is arranged to discharge charge accumulated in the isolating substrate.

Abstract: Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.

Abstract: A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction of (1) a hydrogen-containing precursor and then (2) a fluorine-containing precursor into a substrate processing region. The temperature of the substrate is low during each of the two steps in order to allow the reaction to proceed and form solid residue by-product. A second disclosed method reverses the order of steps (1) and (2) but still forms solid residue by-product. The solid residue by-product is removed by raising the temperature in a subsequent sublimation step regardless of the order of the two steps.

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract: A process for manufacturing a transparent body for use in a touch panel is provided. The process includes: The process includes depositing a first transparent layer stack over a substrate with a first silicon-containing dielectric film, a second silicon-containing dielectric film, and a third silicon-containing dielectric film. The first and the third silicon-containing dielectric films have a low refractive index and the second silicon-containing dielectric film has a high refractive index. The process further includes depositing a transparent conductive film in a manner such that the first transparent layer stack and the transparent conductive film are disposed over the substrate in this order. At least one of the first silicon-containing dielectric film, the second silicon-containing dielectric film, the silicon-containing third dielectric film, or the transparent conductive film is deposited by sputtering from a target.

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a support plate having a support surface a support plate having a support surface to support a substrate, a support ring to support a substrate at a perimeter of the support surface; and a plurality of first support elements disposed in the support ring, wherein an end portion of each of the first support elements is raised above an upper surface of the support ring to define a gap between the upper surface of the support ring and an imaginary plane disposed on the end portions of plurality of first support elements.

Abstract: Apparatus and method for delivering power to a substrate processing chamber may include a target and a substrate support pedestal disposed in the chamber, a pedestal impedance match device coupled between the substrate support pedestal and ground, wherein the pedestal impedance match device is configured to adjust a bias voltage on the substrate support pedestal, a target impedance match device coupled between the target and ground, wherein the target impedance match device is configured to adjust a bias voltage on the target, a switch electrically coupled to the pedestal impedance match device and the target impedance match device, a first RF power source coupled to the switch, wherein the switch is configured to direct high frequency voltage from the first RF power source to either the target or the substrate support pedestal, and a second RF power source coupled to the substrate support pedestal.

Abstract: Methods and apparatus for mixing and delivery of process gases are provided herein. In some embodiments, a gas injection apparatus includes an elongate top plenum comprising a first gas inlet; an elongate bottom plenum disposed beneath and supporting the top plenum, the bottom plenum comprising a second gas inlet; a plurality of first conduits disposed through the bottom plenum and having first ends fluidly coupled to the top plenum and second ends disposed beneath the bottom plenum; and a plurality of second conduits having first ends fluidly coupled to the bottom plenum and second ends disposed beneath the bottom plenum; wherein a lower end of the bottom plenum is adapted to fluidly couple the gas injection apparatus to a mixing chamber such that the second ends of the plurality of first conduits and the second ends of the plurality of second conduits are in fluid communication with the mixing chamber.

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.