Abstract: During mask or reticle inspection, each region is scanned at least twice, using an overlap between each pair of consecutive frames. System contamination and camera blemishes have approximately constant frame coordinates, while mask defects have constant reticle coordinates, but inconstant scan frame coordinates. True defects are detected at different coordinates in consecutive frames with a known displacement therebetween.

Abstract: A technique of the present invention utilizes qualification characteristics from a single wafer for qualifying a semiconductor manufacturing tool. Generally speaking, the technique commences with the processing of a wafer by the manufacturing tool. During processing, one or more qualification characteristics required to properly qualify the tool are measured using an in situ sensor or metrology device. Subsequently, the manufacturing tool is qualified by adjusting one or more parameters of a recipe in accordance with the qualification characteristics measured from the wafer to target one or more manufacturing tool specifications. In some embodiments, the tool to be qualified includes a bulk removal polishing platen, a copper clearing platen and a barrier removal polishing platen.

Abstract: A substrate support comprises a ceramic disc with an electrode that is chargeable through an electrode terminal. An electrical connector connects an external power source to the electrode terminal. The electrical connector has a pair of opposing pincer arms, a groove sized to fit around the electrode terminal, and a pair of through holes to receive a tightening assembly capable of tightening the opposing pincer arms about the electrode terminal.

Abstract: A method and apparatus for process integration in manufacture of a gate structure of a field effect transistor are disclosed. The method includes assembling an integrated substrate processing system having a metrology module and a vacuumed processing platform to perform controlled and adaptive plasma processes without exposing the substrate to a non-vacuumed environment.

Abstract: Apparatus and techniques for automated optical inspection (AOI) utilizing image scanning modules with multiple objectives for each camera are provided. A scanning mechanism includes optical components to sequentially steer optical signals from each of the multiple objectives to the corresponding camera.

Abstract: A substrate processing apparatus exposes a substrate in a process zone of a process chamber to a plasma of a precursor gas comprising a hydrocarbon gas to deposit carbon-doped silicon on the substrate. An effluent comprising unreacted precursor gas and byproducts from the carbon-doped silicon deposition process is exhausted from the process zone and passed into an effluent treatment zone of an effluent treatment reactor. An additive gas comprising an oxygen-containing gas is added to the effluent treatment zone and a plasma is formed of the effluent and additive gas to treat the effluent to reduce the content of unreacted precursor gas and byproduct in the effluent.

Abstract: A wafer support for an ion implanter includes a wafer holder and a support arm for the holder in the implant chamber. A portion of the support arm adjacent the wafer holder is at least intermittently exposed to the ion beam during implantation, as a result of the relative scanning of the ion beam and the wafer holder. An arm shield mechanism has a plurality of shielding surfaces which can be selectively disposed to receive the ion beam to protect the exposed portion of the support arm. The shielding surfaces may form a sleeve arranged over the arm which may be rotatable above the arm to present selected surfaces to the ion beam. Cross contamination when successively implanting different species can be reduced by presenting different shield surfaces to the beam.

Abstract: The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer.

Abstract: A method and apparatus for positioning a substrate in a substrate processing chamber. The method includes placing the substrate on a substrate transfer blade, moving the substrate transfer blade to a first position located in a transfer chamber, and capturing at least one image that includes at least a portion of the substrate transfer blade and at least a portion of the substrate. The method also includes processing the image to determine a position of a predetermined portion of the substrate transfer blade and a position of predetermined portion of the substrate. The method further includes determining an offset between the position of the predetermined portion of the substrate transfer blade and the position of the predetermined portion of the substrate, and moving the substrate transfer blade to a second position located in the substrate processing chamber, wherein the second position is adjusted to account for the offset.

Abstract: A method, system and medium are provided for enabling improved feedback and feedforward control. An error, or deviation from target result, is observed during manufacture of semi conductor chips. The error within standard deviation is caused by two components: a white noise component and a signal component (such as systematic errors). The white noise component is random noise and therefore is relatively non-controllable. The systematic error, in contrast, may be controlled by changing the control parameters. A ratio between the two components is calculated autoregressively. Based on the ratio and using the observed or measured error, the actual value of the error caused by the signal component is calculated utilizing an autoregressive stochastic sequence. The actual value of the error is then used in determining when and how to change the control parameters.

Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other.

Abstract: A photomask structure and method of etching is provided herein. In one embodiment, a photomask includes a translucent substrate and an opaque multi-layer absorber layer disposed over the substrate. The opaque multi-layer absorber layer comprises a self-mask layer disposed over a bulk absorber layer. The self-mask layer comprises one of nitrogenized tantalum and silicon-based materials (TaSiON), tantalum boron oxide-based materials (TaBO), or oxidized and nitrogenized tantalum-based materials (TaON). The bulk absorber layer comprises on of tantalum silicide-based materials (TaSi), nitrogenized tantalum boride-based materials (TaBN), or tantalum nitride-based materials (TaN). The self-mask layer has a low etch rate during the bulk absorber layer etch step, thereby acting as a hard mask.

Abstract: Embodiments of methods of etching EUV photomasks are provided herein. In one embodiment, a method of etching an extreme ultraviolet photomask includes providing a photomask comprising, in order, a substrate, a multi-material layer, a capping layer, and a multi-layer absorber layer, the multilayer absorber layer comprising a self-mask layer disposed over a bulk absorber layer, wherein the self-mask layer comprises tantalum and oxygen and the bulk absorber layer comprises tantalum and essentially no oxygen; etching the self-mask layer using a first etch process; and etching the bulk absorber layer using a second etch process different than the first, wherein the etch rate of the bulk absorber layer is greater than the etch rate of the self-mask layer during the second etch process.

Abstract: We have developed a method and apparatus for cooling electromagnetic lens coils of the kind used in charged particle beams. The method and apparatus provide not only a symmetrical cooling effect around the optical axis of the charged particle beam, but also provide improved uniformity of heat transfer. This improved uniformity enables control over the optical axis of the charged particle beam within about 1 nm for high current charged particle beam columns, wherein the current ranges from about 100 nanoamps to about 1000 nanoamps. The use of a squat and wide electromagnetic lens coil in combination with an essentially flat modular cooling panel, which provides uniform cooling to the electromagnetic lens coil, not only enables control over the optical axis of the charged particle beam, but also provides mechanical stability for the charged particle beam column.

Abstract: An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.

Abstract: In a first aspect, a substrate loading station is served by a conveyor which continuously transports substrate carriers. A substrate carrier handler that is part of the substrate loading station operates to exchange substrate carriers with the conveyor while the conveyor is in motion. A carrier exchange procedure may include moving an end effector of the substrate carrier handler at a velocity that substantially matches a velocity of the conveyor. Numerous other aspects are provided.

Abstract: Embodiments of a processing pad assembly for processing a substrate are provided. The processing pad assembly includes an upper layer having a processing surface and an electrode having a top side coupled to the upper layer and a bottom side opposite the top side. A first set of holes is formed through the upper layer for exposing the electrode to the processing surface. At least one aperture is formed through the upper layer and the electrode.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio.

Abstract: The process state of a chamber after a maintenance procedure can be monitored in-situ in order to ensure that the chamber is ready for processing, while minimizing waste and downtime due to aftereffects of the maintenance procedure. The composition of a bulk plasma in a process chamber can be analyzed using an analytical tool to capture the emission spectrum of the plasma. The spectrum can be analyzed to generate a model of the current chamber conditions, which can be compared to a model of ideal chamber conditions using a statistical analysis approach such as multivariate primary component analysis. If the current and ideal models match to within a set confidence level, the chamber conditions are acceptable for processing devices, and any processing of cycling workpieces or other plasma-cleansing processes can be stopped.