Patents Assigned to Applied Material
  • Patent number: 7335462
    Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
    Type: Grant
    Filed: February 9, 2007
    Date of Patent: February 26, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
  • Patent number: 7335611
    Abstract: A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.
    Type: Grant
    Filed: August 8, 2005
    Date of Patent: February 26, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth S. Collins, Kai Ma, Vijay Parihar, Dean Jennings, Abhilash J. Mayur, Amir Al-Bayati, Andrew Nguyen
  • Publication number: 20080041831
    Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.
    Type: Application
    Filed: October 25, 2007
    Publication date: February 21, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Dean Jennings, Mark Yam, Abhilash Mayur, Vernon Behrens, Paul O'Brien, Leonid Tertitski, Alexander Goldin
  • Publication number: 20080041821
    Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.
    Type: Application
    Filed: October 23, 2007
    Publication date: February 21, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Robert Duncan, Siamak Salimian, Muhammad Rasheed, Harry Smith Whitesell, Bruno Geoffrion, Padmanabhan Krishnaraj, Rudolf Gujer, Diana Gujer
  • Publication number: 20080044568
    Abstract: Techniques of the present invention are directed to reducing clogging of nozzles. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply, a nozzle opening at a distal end, and a heat shield disposed around at least a portion of the nozzle opening. A nozzle passage extends from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber.
    Type: Application
    Filed: October 23, 2007
    Publication date: February 21, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Lawrence Lei, Siqing Lu
  • Patent number: 7333871
    Abstract: A method, system and medium of automation performed on a semiconductor manufacturing tool. The method creates a designed set of experiments for the tool and runs the created set of experiments. The method also collects data resulting from running the experiments and creates a model based on the collected data. The created model is used in automatically controlling the tool.
    Type: Grant
    Filed: January 20, 2004
    Date of Patent: February 19, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Alexander T. Schwarm
  • Patent number: 7331847
    Abstract: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
    Type: Grant
    Filed: January 17, 2006
    Date of Patent: February 19, 2008
    Assignee: Applied Materials, Inc
    Inventors: Hung Chih Chen, John M. White, Shijian Li, Fred C. Redeker, Ramin Emami
  • Patent number: 7332360
    Abstract: The present invention generally provides an apparatus and a method for inspecting a substrate in a substrate processing system. In one aspect, a voltage or current source is used in conjunction with a power density receiving device, such as a spectrometer, to inspect a substrate for various noise spectrum signatures. In one embodiment, spectral data collected from a given substrate is used to generate a current or voltage spectral signature. This spectral signature may then be compared to a reference spectral density signature to predict reliability of a feature structure of a substrate in processing and feedback to the substrate processing system for substrate processing control. Embodiments of the invention further include computer-readable media containing instructions for controlling the substrate processing system, and computer program products having computer-readable program code embodied therein for controlling the substrate processing system and inspecting defects on semiconductor features.
    Type: Grant
    Filed: October 25, 2004
    Date of Patent: February 19, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Michael C. Smayling, Dennis J. Yost
  • Patent number: 7332262
    Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.
    Type: Grant
    Filed: June 16, 2005
    Date of Patent: February 19, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Ian Latchford, Christopher Dennis Bencher, Yuxiang Wang, Mario Dave Silvetti
  • Patent number: 7331250
    Abstract: A battery powered sensing device for diagnosing a processing system and method for using the same are provided. The support platform generally has physical characteristics, such as size, profile height, mass, flexibility and/or strength, substantially similar to those of the substrates that are to be processed in the processing system, so the sensor device can be transferred through the processing system in a manner similar to the manner in which production substrates are transferred through the processing system.
    Type: Grant
    Filed: September 6, 2006
    Date of Patent: February 19, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Reginald Hunter
  • Publication number: 20080039000
    Abstract: A carrier head for chemical mechanical polishing that has a base, a mounting assembly connected to the base having a surface for contacting a substrate, and a retaining ring secured to the base. The retaining ring can include perfluoroalkoxy, polyetherketoneketone, polybenzimidazole, a semi-crystalline thermoplastic polyester, or a long molecular chain molecule produced from poly-paraphenylene terephthalamide.
    Type: Application
    Filed: August 2, 2007
    Publication date: February 14, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Doyle Bennett, Andrew Nagengast, Hung Chen
  • Patent number: 7329328
    Abstract: A method for performing process end point detection in a semiconductor substrate processing system by monitoring for an increase in a flow of backside gas above a predetermined limit.
    Type: Grant
    Filed: December 10, 2004
    Date of Patent: February 12, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Aaron D. Gustafson, Daniel J. Baer, Leonard D. Moravek, John P. Kettley, Jr.
  • Patent number: 7330021
    Abstract: A substrate table and method for supporting and transferring a substrate are provided. The substrate table includes a segmented stage having an upper surface for supporting a substrate, and an end effector. The end effector includes two or more spaced apart fingers and an upper surface for supporting a substrate. The end effector is at least partially disposed and moveable within the segmented stage such that the fingers of the end effector and the segmented stage interdigitate to occupy the same horizontal plane. The segmented stage is adapted to raise and lower about the end effector.
    Type: Grant
    Filed: December 21, 2004
    Date of Patent: February 12, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Shinichi Kurita, Emanuel Beer, Hung T. Nguyen, Benjamin Johnston, Fayez E. Abboud
  • Patent number: 7330244
    Abstract: A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: February 12, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Matthew F. Davis, Lei Lian, Yasuhiro Uo, Michael D. Willwerth, Andrei Ivanovich Netchitaliouk
  • Patent number: 7330249
    Abstract: A method for qualifying printability of a mask, including performing a first inspection of the mask with an optical assembly at a first numerical aperture of collection (NAC) of radiation from the mask, and determining, in response to the first inspection, a first possible defect in the mask and a first location of the first possible defect. The method also includes performing a second inspection of the mask with the optical assembly at a second NAC of radiation from the mask, different from the first NAC, and determining, in response thereto, a second possible defect in the mask and a second location of the second possible defect. The method further includes performing a comparison of the first and second locations, and in response to the comparison, determining that the first and second possible defects represent a real defect if the first location matches the second location.
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: February 12, 2008
    Assignee: Applied Materials, Israel, Ltd.
    Inventors: Avishai Barotv, Gadi Greenberg, Chaim Braude
  • Patent number: 7329586
    Abstract: Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.
    Type: Grant
    Filed: June 24, 2005
    Date of Patent: February 12, 2008
    Assignees: Applied Materials, Inc., Matsushita Electric Industrial Co., Ltd.
    Inventors: Manoj Vellaikal, Hemant P. Mungekar, Young S. Lee, Yasutoshi Okuno, Hiroshi Yuasa
  • Patent number: 7331033
    Abstract: A method for generating a simulated aerial image of a mask projected by an optical system includes determining a coherence characteristic of the optical system. A coherent decomposition of the optical system is computed based on the coherence characteristic. The decomposition includes a series of expansion functions having angular and radial components that are expressed as explicit functions. The expansion functions are convolved with a transmission function of the mask in order to generate the simulated aerial image.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: February 12, 2008
    Assignee: Applied Materials, Israel, Ltd.
    Inventor: Haim Feldman
  • Publication number: 20080029484
    Abstract: The concentration of various contaminants in a plasma can be monitored during processing of a substrate such as a silicon wafer, in order to prevent an unacceptable amount of contamination from being deposited on the substrate. The radiation emitted from the plasma through a window in the processing chamber during processing can be detected and measured by a tool such as an optical emission spectrograph (OES) and the relative intensity of peaks in the spectrum corresponding to various contaminants can be analyzed in order to determine contaminant concentration. In one embodiment, the concentration of aluminum in a plasma is monitored during a plasma chemical vapor deposition (CVD) process in order to ensure that the amount of aluminum in the produced device is lower than a maximum threshold amount.
    Type: Application
    Filed: July 25, 2006
    Publication date: February 7, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Young S. Lee
  • Publication number: 20080029757
    Abstract: A semiconductor device including: a quantum well having photon emission energy level, the quantum well having at least one active layer and two barrier layers, one disposed above the active layer and one disposed below the active layer; and injection regions for injecting electrons into the quantum well, wherein the electrons are cool electrons with respect to the active layer of the quantum well.
    Type: Application
    Filed: November 14, 2006
    Publication date: February 7, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Lawrence West, Francisco Leon
  • Patent number: 7326872
    Abstract: In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies. In one embodiment, a plasma reactor multi-frequency dynamic dummy load is provided that is adapted for a multi-frequency matching network having multiple matching networks. Each of the multiple matching networks being tunable within a tunespace.
    Type: Grant
    Filed: August 26, 2004
    Date of Patent: February 5, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Steven C. Shannon