Abstract: A computer-implemented method, system and computer program device are provided for monitoring production of semiconductor products to detect potential defect excursions. Equipment based data is collected reflecting equipment performance for a plurality of semiconductor manufacturing tools used for processing a plurality of semiconductor products. Also, product level data is collected reflecting product quality for the plurality of semiconductor products processed on the plurality of manufacturing tools. At least a portion of the product level data and at least a portion of the equipment based data are then correlated. At least one report is generated of the correlation of data.

Abstract: A chemical-mechanical polishing composition that includes less than about 1% wt. abrasive, an additive, and water, where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of polishing a semiconductor substrate in a shallow trench isolation process, the method including contacting the substrate with a polishing pad of a polishing apparatus while applying a high selectivity slurry to the polishing pad, where the slurry comprises less than about 1% wt. abrasive, an additive, and water, and where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of making a chemical-mechanical polishing slurry composition, the method including adding together an abrasive, an additive and water to form the slurry, where a weigh percent of the additive is greater than a weight percent of the abrasive, and the abrasive and additive together comprise less than 2% by wt. of the slurry.

Abstract: A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes formed therethrough that align with a plurality of apertures formed through the diffuser plate, where the apertures each have a greater sectional area than the holes in the tuning plate. Each aperture is aligned with a respective hole to define gas passages through the gas distribution plate assembly. The tuning plate may be interchanged with a replacement tuning plate to change the gas flow characteristics through the gas distribution plate assembly.

Abstract: The invention provides a method for automatically aligning a beam of charged particles with an aperture. Thereby, the beam is defelcted to two edges of the aperture. From the signals required to obtain an extinction, a correction deflection field is calculated. Furter, a method for automatically aligning a beam of charged particles with an optical axis is provided. Thereby a defocusing is introduced and a signal calculated based on an introduced image shift is applied to a deflection unit. Further, a method for correction of the astigmatism is provided. Thereby the sharpness is evaluated for a sequence of frames measured whilst varying the signals to a stigmator.

Abstract: A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. In particular, a method according to embodiments of the present invention includes the step of identifying one or more input parameters. Each input parameter causes a change in at least two outputs. The method also includes the step of storing values of the identified inputs and corresponding empirical output values along with predicted output values. The predicted output values are calculated based on, in part, the values of the identified inputs. The method also includes the step of calculating a set of transform coefficients by minimizing a score equation that is a function of differences between one or more of the empirical output values and their corresponding predicted output values.

Abstract: A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.

Abstract: A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800° C. or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen.

Abstract: A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate, where the method includes the steps of generating water vapor by contacting hydrogen gas and oxygen gas with a water vapor generation catalyst, and providing the water vapor to the process chamber. The method also includes flowing a silicon-containing precursor into the process chamber housing the substrate, flowing an oxidizing gas into the chamber, and causing a reaction between the silicon-containing precursor, the oxidizing gas and the water vapor to form the dielectric material in the trench. The method may also include increasing over time a ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber to alter a rate of deposition of the dielectric material.

Abstract: A substrate processing method practiced in a plasma sputter reactor including an RF coil and two or more coaxial electromagnets, at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.

Abstract: Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.

Abstract: Alignment films for use within a liquid crystal display (LCD) and methods for their manufacture are disclosed. Embodiments of the invention generally relate to process conditions that are selected to improve certain properties of the alignment films. The alignment films include a deposited layer of amorphous carbon, a hydrogenated amorphous carbon film or a hydrogenated diamond-like carbon (DLC) film.

Abstract: System for scanning a surface, including a light source producing an illuminating light beam; an objective lens assembly, located between the light source and the surface; at least one light detector; an apodizator located between the light source and the objective lens assembly; and a relay lens assembly located between the apodizator and the objective lens assembly, wherein the light source produces an image of the illuminating light beam on the apodizator, the apodizator blocks at least a portion of the illuminating light beam, the relay lens assembly images the blocked illuminating light beam at an entrance pupil of the objective lens assembly, and wherein at least one of said at least one light detector, detects light reflected from said surface.

Abstract: An integrated photolithography chemical delivery system for a track lithography system. The integrated photolithography chemical delivery system includes a buffer vessel adapted to receive a photolithography chemical from a source volume. The integrated photolithography chemical delivery system also includes a photolithography chemical pump connected to the buffer vessel. The integrated photolithography chemical delivery system further includes a filter connected to the photolithography chemical pump.

Abstract: A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.

Abstract: A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate.

Abstract: A particle beam lithography system and method of blanking a beam such as a particle or other beam. The system may include a frequency divider adapted to convert a master clock signal at a first frequency into an integral number N of waveforms at a second frequency, a reference device adapted to provide a fixed threshold reference signal, a sequencer adapted to provide N sets of data, a blanking circuit for each of the waveforms for creating a blanking signal for each of the waveforms, and a logic circuit for combining each of the blanking signals from each of the blanking circuits. The blanking circuit may include a digital to analog converter adapted to receive one of the N sets of data from the sequencer and to generate a variable threshold reference signal and a window comparator adapted to receive one of the waveforms, the fixed threshold reference signal, and the variable threshold reference signal and to generate a blanking signal.

Abstract: Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.

Abstract: A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpiece support, a VHF power generator being coupled to the capacitively coupled source power applicator, a plasma bias power applicator or electrode in the workpiece support and an RF bias power generator coupled to the plasma bias power applicator. A controller adjusts the relative amounts of power simultaneously coupled to plasma in the chamber and conduit by the toroidal plasma source and by the capacitively coupled plasma source power applicator.

Abstract: In a method of cleaning a surface of a substrate processing chamber component to remove process deposits, the component surface is cooled to a temperature below about ?40° C. to fracture the process deposits on the surface. The surface can be cooled by immersing the surface in a low temperature fluid, such as liquid nitrogen. In another version, the component surface is heated to fracture and delaminate the deposits, and optionally, subsequently rapidly cooled to form more fractures. The component surface cleaning can also be performed by bead blasting followed by a chemical cleaning step.

Abstract: A polishing layer of a polishing has a window member with a top surface positioned a predetermined distance below the polishing surface. A transparent layer can be positioned below the polishing layer and supporting the window member.