Abstract: Embodiments of the present invention include a focus ring segment and a focus ring assembly. In one embodiment, the focus ring segment includes an arc-shaped body having a lower ring segment, a middle ring segment, a top ring segment and a lip. The lower ring segment has a bottom surface, and the middle ring segment has a bottom surface, wherein the middle ring segment is connected to the lower ring segment at the middle ring segment bottom surface. The top ring segment has a bottom surface, wherein the top ring segment is connected to the middle ring segment at the top ring segment bottom surface. The lip extends horizontally above the middle ring segment, wherein the lip is sloped radially inwards towards a centerline of the focus ring segment. In another embodiment, the focus ring assembly includes at least a first ring segment and a second ring segment.

Abstract: Embodiments of the present disclosure provide a method for controlling moisture from substrate being processed. Particularly, embodiments of the present disclosure provide methods for removing moisture from polymer materials adjacent bond pad areas. One embodiment of the present includes providing a moisture sensitive precursor and forming a compound from a reaction between the moisture to be controlled and the moisture sensitive precursor.

Abstract: Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer washed off.

Abstract: A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

Abstract: Embodiments of substrate support rings are provided herein. In some embodiments, an apparatus for processing substrates includes, a ring configured to be disposed about a peripheral edge of a substrate support to support at least a portion of a substrate disposed atop the substrate support, wherein the ring comprises a heater; and a power supply coupled to the heater to provide power to the heater.

Abstract: Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.

Abstract: Embodiments of edge rings for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, an edge ring for a semiconductor process chamber may include an annular body having a central opening, an inner edge, an outer edge, an upper surface, and a lower surface, an inner lip disposed proximate the inner edge and extending downward from the upper surface, and a plurality of protrusions extending upward from the inner lip and disposed along the inner edge of the annular body, wherein the plurality of protrusions are arranged to support a substrate above the inner lip and over the central opening, wherein the inner lip is configured to substantially prevent light radiation from travelling between a first volume disposed above the edge ring and a second volume disposed below the edge ring when a substrate is disposed on the plurality of protrusions.

Abstract: A method for at least partially filling a feature on a workpiece generally includes obtaining a workpiece including a feature, depositing a first conductive layer in the feature, wherein the sheet resistance of the first conductive layer is greater than 10 ohm/square, depositing a second conductive layer in the feature by electrochemical deposition, wherein the electrical contacts are at least partially immersed in the deposition chemistry.

Abstract: A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

Abstract: Apparatus for providing heat energy to a process chamber are provided herein. The apparatus may include a process chamber body of the process chamber, a solid state source array having a plurality of solid state sources, disposed on a first substrate, to provide heat energy to the process chamber to heat a target component disposed in the process chamber body, and at least one reflector disposed on the first substrate proximate to one or more of the plurality of solid state sources to direct heat energy provided by the one or more of the plurality of solid state sources towards the target component.

Abstract: A vacuum chuck and a process chamber equipped with the same are provided. The vacuum chuck assembly comprises a support body, a plurality of protrusions, a plurality of channels, at least one support member supporting the support body, at least one resilient member coupled with the support member, a hollow shaft supporting the support body, at least one electrical connector disposed through the hollow shaft, and an air-cooling apparatus. The support body has a support surface for holding a substrate (such as a wafer) thereon. The protrusions are formed on and project from the support surface for creating a gap between the substrate and the support surface. The channels are formed on the support surface for generating reduced pressure in the gap. The air-cooling apparatus is used for providing air cooling in the vicinity of the electrical connector.

Abstract: A metrology system has an elongate stationary camera pixel array facing a workpiece transit path of a robot with an field of view corresponding to a workpiece diameter and extending transverse to the transit path portion, and a stationary elongate light emitting array generally parallel to the pixel array. An image control processor causes the camera to capture successive image frames while the robot is moving the workpiece through the transit path.

Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

Abstract: Embodiments of a lamphead and apparatus utilizing same are provided. In some embodiments, a lamphead for thermal processing may include a monolithic member having a plurality of coolant passages and a plurality of lamp passages and reflector cavities, wherein each lamp passage is configured to accommodate a lamp and each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for the lamp, and wherein the plurality of coolant passages are disposed proximate to the plurality of lamp passages; and at least one heat transfer member extending from the monolithic member into each coolant passage, wherein the at least one heat transfer member extends into each coolant passage up to the full height of each coolant passage. The lamphead may be disposed in an apparatus comprising a process chamber having a substrate support, wherein the lamphead is positioned to provide energy to the substrate support.

Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.

Abstract: Systems and methods are described relating to semiconductor processing chambers. An exemplary chamber may include a first remote plasma system fluidly coupled with a first access of the chamber, and a second remote plasma system fluidly coupled with a second access of the chamber. The system may also include a gas distribution assembly in the chamber that may be configured to deliver both the first and second precursors into a processing region of the chamber, while maintaining the first and second precursors fluidly isolated from one another until they are delivered into the processing region of the chamber.

Abstract: In some embodiments, an indexed inline substrate processing tool may include a substrate carrier having a base and pair of opposing substrate supports having respective substrate support surfaces that extend upwardly and outwardly from the base; and a plurality of modules coupled to one another in a linear arrangement, wherein each module of the plurality of modules comprises an enclosure having a first end, a second end, and a lower surface to support the substrate carrier and to provide a path for the substrate carrier to move linearly through the plurality of modules, and wherein at least one module of the plurality of modules comprises: a window disposed in a side of the enclosure; a heating lamp coupled to the side of the enclosure; a gas inlet disposed proximate a top of the enclosure; and an exhaust disposed opposite the gas inlet.