Abstract: Methods and apparatus are provided for calibrating inkjet print nozzles that include dispensing a plurality of ink drops onto a surface with one or more inkjet print nozzles at a firing pulse voltage, measuring a parameter of the ink drops, and calibrating the firing pulse voltage of at least one of the one or more inkjet print nozzles based on the measured parameter of the ink drops.

Abstract: Methods and products, including computer program products, for endpoint determination. An image of a portion of a substrate is captured in-situ, where the image includes optical information that depends on a thickness of a substrate layer. The image is examined to find a location on the substrate, and a process endpoint is determined using a portion of the optical information that corresponds to the location.

Abstract: A flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus has a central portion with an outer surface providing a substrate receiving surface, a perimeter portion for connecting the central portion to a base of the carrier head, and at least one flap extending from an inner surface of the central portion. The flap includes a laterally extending first section and a vertically extending second section connecting the laterally extending first section to the central portion.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed.

Abstract: Methods and compositions are provided for planarizing substrate surfaces with low dishing. Aspects of the invention provide methods of using compositions comprising an abrasive selected from the group consisting of alumina and ceria and a surfactant for chemical mechanical planarization of substrates to remove polysilicon.

Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.

Abstract: A chemical mechanical polishing apparatus includes a rotating plate on which a substrate received, and a polishing pad which moves across the substrate as it rotates on the plate to polish the substrate. The load of the pad against the substrate, and the rotary speed of the plate, may be varied to control the rate of material removed by the pad.

Abstract: A method and apparatus for chemical mechanical polishing includes a platen supports a polishing article, a robot located proximate the platen, a carrier head having a retaining ring, and a carrier heads support mechanism. The robot is configured to position a substrate on the polishing article, and the carrier heads support mechanism is configured to move the carrier head into a position that the retaining ring surrounds the substrate.

Abstract: A method of depositing a gate dielectric layer for a thin film transistor is provided. The gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound.

Abstract: A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract: A process for selectively removing photoresist, organic overlayers, and/or polymers/residues from a substrate without altering the surface chemistry and adhesion properties of the underlying substrate layers is provided. Generally, the process includes pretreating the substrate with hydrogen (e.g., by way of a hydrogen-based plasma) prior to deposition of a photoresist layer, and then ashing the substrate with a hydrogen-based plasma to selectively remove the photoresist, organic overlayers, and/or polymers/residues from the substrate during etching, post-etch, rework, etc. The hydrogen-based ashing process of the invention may be used post-etch to remove the residue photoresist, or may be used in a rework stripping process to remove misaligned patterns. The hydrogen-based ashing process following the initial hydrogen surface pretreatment substantially reduces surface chemistry poisoning, while retaining adequate adhesion properties following ashing.

Abstract: A method and apparatus for testing and characterizing features formed on a substrate. In one embodiment, a test structure is provided that includes a test element having a first side and an opposing second side. A first set of one or more structures defining a first region having a first local density are disposed adjacent the first side of the test element. A second set of one or more structures defining a second region having a second local density are disposed adjacent the second side of the test element. A third set of one or more structures defining a third region having a first global density are disposed adjacent the first region. A fourth set of one or more structures defining a fourth region having a second global density are disposed adjacent the second region.

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.

Abstract: Methods and apparatus for providing metrology for chemical mechanical polishing. A chemical mechanical polishing system includes a first polishing station, a second polishing station, a transport device, and a first measuring station. The transport device is configured to hold a workpiece during polishing at the first and second polishing stations and to move the workpiece from the first polishing station to the second polishing station. The first measuring station is situated to measure a characteristic of the workpiece when the transport device is holding the workpiece and when the workpiece is not in contact with a polishing pad of any of the first polishing station and the second polishing station.

Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

Abstract: An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

Abstract: A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.

Abstract: In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.

Abstract: A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

Abstract: Embodiments in accordance with the present invention relate to techniques for enhancing uniformity of plasma-based semiconductor processing. In one technique, the exterior of a plasma-based processing chamber features a series of substantially continuous plates composed of a material exhibiting a low permeability to magnetic fields. This high-? shielding material is utilized to block exposure of a plasma within the chamber to the effects of external magnetic fields. Embodiments in accordance with the present invention are effective to shield plasma-based processing chambers from external magnetic fields originating from adjacent clustered chambers, and/or from the earth's geomagnetic field.