Abstract: A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system.

Abstract: Processing gases reactive with each other are provided in parallel to a processing chamber through separate delivery lines including mass flow controllers devoted to each line. The parallel delivery lines meet in a mixing manifold located proximate to the processing chamber and relatively far downstream from the mass flow controllers and other flow-constricting components of the gas delivery system. The continuous high flow of gas provided by the devoted mass flow controllers may maintain a sufficiently high pressures on the delivery lines to prevent partial clogging from leading to a further drop in pressure and complete obstruction of the delivery line.

Abstract: A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes varying over time a ratio of the (silicon-containing processing gas):(oxidizing gas). The method also includes exposing the substrate to nitrous oxide at a temperature less than about 900° C. to anneal the deposited film.

Abstract: A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.

Abstract: Bright and dark field imaging operations in an optical inspection system occur along substantially the same optical path using the same light source by producing either a circular or an annular laser beam. Multiple beam splitting is achieved through the use of a diffractive optical element having uniform diffraction efficiency. A confocal arrangement for bright field and dark field imaging can be applied with multiple beam scanning for suppressing the signal from under-layers. A scan direction not perpendicular to the direction of movement of a target provides for improved die-to-die comparisons.

Abstract: A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.

Abstract: An expander roller for the wrinkle-free guidance of webs in closed chambers comprises two stationary supporting bodies (7, 8) which are oriented with respect to one another at an obtuse angle in the proximity of a center plane (E—E). On both sides of the center plane (E—E) on the supporting bodies (7, 8) are disposed roller sections (12) with surfaces in the form of truncated cones with shell lines (M1, M2) and which during their rotation pass through positions in which said shell lines (M1, M2) are aligned with one another. The surfaces (12a) of the rollers are herein steplessly in line one with the other in succession and the rollers are supported via roller bearings in groups (10, 11) on the two supporting bodies (7, 8).

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.

Abstract: An apparatus and method for supporting a substrate is provided. In one embodiment, an apparatus for supporting a substrate includes a body having a band extending therefrom. The band is adapted to retain a fluid on the body thereby forming a shallow processing bath for processing the substrate. The band is adapted to deflect under centrifugal force to release the fluid from the substrate as the body is rotated above a predetermined rate.

Abstract: A semiconductor wafer having two regions of different dopant concentration profiles is evaluated by performing two (or more) measurements in the two regions, and comparing measurements from the two regions to obtain a reflectivity change measure indicative of a difference in reflectivity between the two regions. Analyzing the reflectivity change measure yields one or more properties of one of the regions if corresponding properties of the other region are known. For example, if one of the two regions is doped and the other region is undoped (e.g. source/drain and channel regions of a transistor), then a change in reflectivity between the two regions can yield one or more of the following properties in the doped region: (1) doping concentration, (2) junction or profile depth, and (3) abruptness (i.e. slope) of a profile of dopant concentration at the junction. In some embodiments, the just-described measurements in the two regions are performed by oscillating a spot of a beam of electromagnetic radiation.

Abstract: A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.

Abstract: A method and apparatus for matching impedance magnitude and impedance phase for an acoustic-wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.

Abstract: A method of fabricating on a substrate an optical detector in an optical waveguide, the method involving: forming at least one layer on a surface of the substrate, said at least one layer comprising SiGe; implanting an impurity into the at least one layer over a first area to form a detector region for the optical detector; etching into the at least one layer in a first region and a second region to form a ridge between the first and second regions, said ridge defining the optical detector and the optical waveguide; filling the first and second regions with a dielectric material having a lower refractive index than SiGe; and after filling the first and second regions with the dielectric material, removing surface material to form a planarized upper surface.

Abstract: An apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.

Abstract: A two part retaining ring is described that has a lower ring and an upper ring. The lower ring contacts a polishing surface during chemical mechanical polishing. The upper surface and the lower surface of the lower ring have matching grooves formed therein to increase the flexibility of the lower ring.

Abstract: A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=arn. After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

Abstract: A system, method and medium of sending messages in a distributed data processing network is described, and contemplates receiving a message that includes subject information that is generated based on one or more pre-selected portions as the message is generated. A message delivery system in a client-server environment is also described. The message delivery system includes a server configured to receive a message that includes subject information that is generated based on one or more pre-selected portions as the message is created and configured to forward the message based on the subject information.

Abstract: An electrochemical mechanical processing station having a zoned polishing pad assembly is provided. The zoned polishing pad assembly includes a conductive layer coupled to an upper layer having a non-conductive processing surface. At least two zones of different current permeability are defined across the processing surface of the upper layer. Each zone is defined by an attribute of the upper layer.

Abstract: Disclosed herein is a non-contact package useful when an article to be stored or shipped in the package includes a sensitive surface, the performance of which will be detrimentally affected if the sensitive surface is contacted with a nominal amount of mechanical force. A fluid environment which does not produce sufficient mechanical force to detrimentally affect the sensitive surface may be used in contact with the sensitive surface to prevent an undesirable chemical reaction on the sensitive surface. A fluid environment may also be used inside the package to support surrounding walls of the package so that such walls do not contact the sensitive surface and/or to dissipate force applied to the exterior of the package so that the sensitive surface will not be damaged.