Abstract: A method of fabricating a color filter array including providing substrate, forming a multilevel structure that is attached to the substrate, etching the multilevel structure to expose first wells in the multilevel structure, filling at least the first wells in the multilevel structure with the first color component, curing the first color component, etching the multilevel structure to expose second wells in the multilevel structure, filling at least the second wells in the multilevel structure with a second color component, and curing the second color component.

Abstract: A copolymerized high temperature bonding component that includes a first amount of an organofluorine polymer and a second amount of an organosilicon polymer which are chemically bound to each other to form a copolymer. The bonding component may have properties that allow it to be used for binding dissimilar materials.

Abstract: One or more metrology objects and one or more metrology operations may be identified. A design-based representation of a first metrology object of the one or more metrology objects may be received. Furthermore, an image-based representation of the first metrology object of the one or more metrology objects may be received where the one or more metrology operations include a first metrology operation associated with the first metrology object that is to be performed on the image-based representation of the first metrology object. The design-based representation of the first metrology object may be mapped with the image-based representation of the first metrology object. The first metrology operation may be performed based on the mapping.

Abstract: An apparatus for supplying plasma products includes a plasma generation block that defines a toroidal plasma cavity therein. The plasma cavity is substantially symmetric about a toroidal axis, and the toroidal axis defines a first and second axial side of the plasma generation block. A magnetic element at least partially surrounds the plasma generation block at one azimuthal location with respect to the toroidal axis, such that a magnetic flux within the magnetic element induces a corresponding electric field into the plasma cavity to generate a plasma from one or more source gases, the plasma forming plasma products. The plasma generation block supplies the plasma products through a plurality of output apertures defined by the plasma generation block on the first axial side.

Abstract: Embodiments of the present disclosure are directed to a gimbal assembly, that includes a gimbal plate having a central opening, a pivot screw disposed within a pivot mount formed in the gimbal plate, wherein the pivot screw includes a spherical pivot head about which the gimbal plate pivots, one or more motors coupled to the gimbal plate configured to provide in-situ gimbal plate motion about the spherical pivot head, and a plurality of leveling indicators configured that determine deflection of gimbal plate.

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.

Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.

Abstract: Implementations described herein generally relate to a flexible display devices, and more specifically to flexible cover lens films. The flexible cover lens film has improved strength, elasticity, optical transmission, and anti-abrasion properties, and contains a multi-layer hardcoat disposed on a substrate layer. The substrate layer has a thickness of 2 ?m to 100 ?m and the multi-layer hardcoat has a thickness of 1 ?m to 30 ?m. The mufti-layer hardcoat contains a first layer deposited using a wet deposition process, a second layer deposited using a dry deposition process, and one or more adhesion promotion layers. For optical properties, the multi-layer hardcoat has a total transmission greater than 88%, a haze of about 1% or less, and a yellowness index of b*<1. By combining wet and dry deposition processes to form the multi-layer hardcoat, the cover lens film is both flexible and strong with a hardness between 4H and 9H.

Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

Abstract: A polishing system includes a polishing station including a platen to support a polishing pad, a support to hold a substrate, an in-line metrology station to measure the substrate before or after polishing of a surface of the substrate in the polishing station, and a controller. The in-line metrology station includes a color line-scan camera, a white light source, a frame supporting the light source and the camera, and a motor to cause relative motion between the camera and the support along a second axis perpendicular to the first axis to cause the light source and the camera to scan across the substrate. The controller is configured to receive a color data from the camera, to generate a 2-dimensional color image from the color data, and to control polishing at the polishing station based on the color image.

Abstract: Embodiments disclosed herein include a controller for a treatment system for lessening the hazard of effluents produced in a processing system.

Abstract: Processing methods may be performed to remove unwanted materials from a substrate, such as a native oxide material. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.

Abstract: A polishing system includes a platen having a top surface, an annular polishing pad supported on the platen, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure from which the carrier head is suspended and which is configured to move the hold the carrier head laterally across the polishing pad, and a controller. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen, and the inner edge of the annular polishing pad is positioned around the axis of rotation. The controller is configured to cause the support structure to position the carrier head such that a portion of the substrate overhangs the inner edge of the annular polishing pad while the substrate is contacting the polishing pad.

Abstract: Embodiments of the present invention a load lock chamber including two or more isolated chamber volumes, wherein one chamber volume is configured for processing a substrate and another chamber volume is configured to provide cooling to a substrate. One embodiment of the present invention provides a load lock chamber having at least two isolated chamber volumes formed in a chamber body assembly. The at least two isolated chamber volumes may be vertically stacked. A first chamber volume may be used to process a substrate disposed therein using reactive species. A second chamber volume may include a cooled substrate support.

Abstract: A method of controlling processing of a substrate includes generating, based on a signal from an in-situ monitoring system, first and second sequences of characterizing values indicative of a physical property of a reference zone and a control zone, respectively, on a substrate. A reference zone rate and a control zone rate are determined from the first and sequence of characterizing values, respectively. An error value is determined by comparing characterizing values for the reference zone and control zone. An output parameter value for the control zone is generated based on at least the error value and a dynamic nominal control zone value using a proportional-integral-derivative control algorithm, and the dynamic nominal control zone value is generated in a second control loop based on at least the reference zone rate and the control zone rate. The control zone of the substrate is processed according to the output parameter value.

Abstract: Embodiments of the present disclosure generally relate to a film treatment process. In one embodiment, a transition metal oxide layer including a dopant is deposited on a substrate. After the doped transition metal oxide layer is deposited, a high pressure annealing process is performed on the doped transition metal oxide layer to densify the doped transition metal oxide without outgassing of the dopant. The high pressure annealing process is performed in an ambient environment including the dopant and at a pressure greater than 1 bar.

Abstract: Methods and systems for time-series transient analysis of data are disclosed herein. A method includes receiving time-series data, generating a training data set including randomized data points, generating randomized data point combinations using a set of the randomized data points that are within a time window, computing distance values based on the randomized data point combinations, generating a classifier based on a plurality of computed distance values, and determining, using the classifier, a probability that new time-series data generated during a new execution of the process matches the time-series data. A system for performing the method is also disclosed.

Abstract: A method of manufacturing an article comprises providing an article. An ion assisted deposition (IAD) process is performed to deposit a second protective layer over a first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a porosity of less than 1%. The second protective layer seals a plurality of cracks and pores of the first protective layer.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

Abstract: An article comprises a body having a coating. The coating comprises a Y-O-F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.