Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.
Type:
Grant
Filed:
February 26, 2018
Date of Patent:
January 7, 2020
Assignee:
ARM Ltd.
Inventors:
Bal S. Sandhu, Cezary Pietrzyk, George McNeil Lattimore
Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, bit positions of a portion of a memory array may be placed in a first value state. Values to be written to the bit positions may be determined subsequent to placement of the bit positions in the first value state. Values at selected ones of the bit positions may then be changed from the first value state to a second value state while maintaining remaining unselected ones of the bit positions in the first value state so that the bit positions store or represent the values determined to be written to the bit positions.
Type:
Grant
Filed:
June 5, 2017
Date of Patent:
December 31, 2019
Assignee:
ARM Ltd.
Inventors:
Joel Thornton Irby, Mudit Bhargava, Alan Jeremy Becker
Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, which may be useful in avoiding formation of a potentially resistive oxide layer at an interfacial surface between a conductive substrate, for example, and a correlated electron material.
Abstract: An electric motor is disclosed having a detachable stator tooth. In some implementations, coil windings of the electric motor may be coupled to one or more drivers independently of other coil windings. A method of repairing and manufacturing an electric motor having a detachable stator tooth is also disclosed.
Abstract: Disclosed are methods, systems and devices for operation of correlated electron switch (CES) devices. In one aspect, a CES device may be placed in any one of multiple impedance states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. In one implementation, a CES device may be placed in a high impedance or insulative state, or two more distinguishable low impedance or conductive states.
Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a read operation or a particular write operation may be performed on a correlated electron switch (CES) device by coupling a terminal of the CES device to a particular node through any one of multiple different resistive paths.
Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. In embodiments, after formation of the one or more CEM traces, a spacer may be deposited in contact with the one or more CEM traces. The spacer may operate to control an atomic concentration of dopant within the one or more CEM traces by replenishing dopant that may be lost during subsequent processing and/or by forming a seal to reduce further loss of dopant from the one or more CEM traces.
Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain. Additionally, bipolar write operations for set and reset may enable an increased write window and enhanced durability for a CES device.
Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.
Type:
Grant
Filed:
March 28, 2018
Date of Patent:
September 17, 2019
Assignee:
ARM Ltd.
Inventors:
Lucian Shifren, Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Christopher Randolph McWilliams
Abstract: Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device.
Type:
Grant
Filed:
June 25, 2018
Date of Patent:
August 20, 2019
Assignee:
ARM Ltd.
Inventors:
Azeez Bhavnagarwala, Robert Campbell Aitken, Lucian Shifren
Abstract: A configurable impeder is provided. The configurable impeder comprises of multiple CESs. Each of the CESs is capable of being configured into one of a plurality of impedance states. Further, a programing circuit is provided. The programing circuit provides a plurality of programing signals in dependence of an input signal. Each programing signal configures an impedance state of a respective CES from the plurality of CESs.
Type:
Grant
Filed:
January 8, 2018
Date of Patent:
August 13, 2019
Assignee:
ARM Ltd.
Inventors:
Azeez Jennudin Bhavnagarwala, Vikas Chandra, Brian Tracy Cline
Abstract: Subject matter disclosed herein may relate to fabrication of layered correlated electron materials (CEMs) in which a first group of one or more layers may comprise a first concentration of a dopant species, and wherein a second group of one or more layers may comprise a second concentration of a dopant species. In other embodiments, a CEM may comprise one or more regions of graded concentration of a dopant species.
Abstract: Subject matter disclosed herein may relate to correlated electron switch elements and, more particularly, to controlling current through correlated electron switch elements during programming operations.
Type:
Grant
Filed:
May 9, 2017
Date of Patent:
August 6, 2019
Assignee:
ARM Ltd.
Inventors:
Mudit Bhargava, Glen Arnold Rosendale, Akshay Kumar, Piyush Agarwal, Shidhartha Das
Abstract: Subject matter disclosed herein may relate to systems, devices, and/or processes for tracking signals and/or states representative of behavioral and/or biological state.
Abstract: A monitoring circuit for a CES element is provided. The circuit includes a control circuit and an output circuit. The control circuit is configured to vary a control signal provided to the CES element. The control signal may be varied for determining an impedance state of the CES element. The output circuit provided an output signal in dependence on the determined impedance state of the CES element.
Type:
Grant
Filed:
April 23, 2018
Date of Patent:
July 16, 2019
Assignee:
ARM Ltd.
Inventors:
Bal S. Sandhu, Robert Aitken, George Lattimore
Abstract: Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to voltage detection with correlated electron switch devices.
Type:
Grant
Filed:
September 30, 2016
Date of Patent:
July 16, 2019
Assignee:
ARM Ltd.
Inventors:
Mudit Bhargava, Glen Arnold Rosendale, Shidhartha Das
Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials (CEMs) devices used, for example, to read from a resistive memory element or to write to a resistive memory element. In embodiments, by limiting current flow through a CEM device, the CEM device may operate in the absence of Mott and/or Mott-like transitions in a way that brings about symmetrical diode-like operation of the CEM device.
Abstract: Apparatus and methods are provided for operating an electric motor, comprising selectively energizing the coils of a stator having a plurality of stator teeth, each stator tooth having a said coil mounted thereon. The stator coils of a subset of the stator teeth are energized during a given time period to attract a corresponding rotor tooth into alignment with each of the stator teeth in the subset over the given time period. The stator coil of at least one stator tooth in the subset is energized during a portion of the given time period before the at least one stator tooth overlaps the corresponding rotor tooth.