Abstract: The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.

Abstract: A power supply for providing HV power to a lithography illumination source comprising a HV power source arranged to provide the HV power, a HV power transmission line arranged to transmit the HV energy from the HV power source and one or more RF terminations provided on one or more of an input end of the transmission line or an output end of the transmission line. The one or more RF terminations terminate the transmission line to reduce reflection of RF energy at the end of the transmission line.

Abstract: An interferometric displacement measuring system operable to measure displacements of a movable object of the lithographic apparatus in a first direction using a measurement beam of radiation and a reflector. The reflector being substantially planar and substantially perpendicular to the first direction. Calibration is obtained using a first set of measurements of the angular position movable object. A phase offset in the measurement beam is affected. A second set of measurements of the angular position of the movable object is obtained. The interferometric displacement measuring system is calibrated based on the first and second sets of measurements.

Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.

Abstract: A lithographic apparatus can include the following devices: a patterning system, a projection system, and a radiation beam inspection device. The patterning system can be configured to provide a patterned radiation beam. The projection system can be configured to project the patterned radiation beam onto a target portion of a substrate. Further, the radiation beam inspection device can be configured to inspect at least a part of the patterned radiation beam. In a substrate exposure position, the projection system is configured to expose a pattern of radiation on the substrate using the patterned radiation beam and the radiation beam device is configured to move the reflecting device away from a light path of the patterned radiation beam. In a radiation beam inspection position, the radiation beam inspection device is configured to move the reflecting device into the light path of the patterned radiation beam.

Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

Abstract: In an immersion lithography apparatus, the immersion liquid is supplied and removed by a liquid supply system. The immersion lithography apparatus includes a resistivity sensor configured to monitor the electrical resistivity of the immersion liquid to monitor a potential contamination within the liquid supply system and may include a cleaner supply system configured to supply a cleaning fluid to the liquid supply system to clean at least the liquid supply system.

Abstract: A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

Abstract: An immersion lithographic apparatus is described in which a two-phase flow is separated into liquid-rich and gas-rich flows by causing the liquid-rich flow to preferentially flow along a surface.

Abstract: Liquid is supplied to a space between the projection system of a lithographic apparatus and a substrate. A flow of gas towards a vacuum inlet prevents the humid gas from escaping to other parts of the lithographic apparatus. This may help to protect intricate parts of the lithographic apparatus from being damaged by the presence of humid gas.

Abstract: The present invention provides a method of monitoring the operation of a radiation source fuel droplet stream generator comprising a fuel-containing capillary and a piezo-electric actuator (500). The method comprises analysing the resonance frequency spectrum of a system comprising the fuel-containing capillary and the piezo-electric actuator in particular to look for changes in the resonance frequencies of the acoustic system which may be indicative of a change in the properties of the system requiring investigation.

Abstract: A lithographic apparatus includes a substrate table constructed to hold a substrate, a projection system configured to project a patterned radiation beam through an opening and onto a target portion of the substrate, and a conduit having an outlet in the opening. The conduit is configured to deliver gas to the opening. The lithographic apparatus includes a temperature control apparatus disposed in a space between the projection system and the substrate table. The temperature control device is configured to control the temperature of the gas in the space after the gas passes through the opening.

Abstract: A lithographic apparatus is disclosed including a liquid supply system configured to at least partly fill a space between the projection system and the substrate with a liquid, an outlet configured to remove a mixture of liquid and gas passing through a gap between a liquid confinement structure of the liquid supply system and the substrate, and an evacuation system configured to draw the mixture through the outlet, the evacuation system having a separator tank arranged to separate liquid from gas in the mixture and a separator tank pressure controller, connected to a non-liquid-filled region of the separator tank, configured to maintain a stable pressure within the non-liquid-filled region.

Abstract: An apparatus and method for detecting extreme ultraviolet (EUV) radiation is disclosed. The apparatus includes a detector having a top surface, a layer of scintillation material on the top surface of the detector, a layer of spacer material on the layer of scintillation material, and a spectral purity filter layer on the layer of spacer material. The method includes directing the EUV radiation through the spectral purity filter layer and through the spacer material layer. The spacer material layer may be disposed between the spectral purity filter layer and a layer of scintillation material. The method further includes detecting scintillation radiation emitted by the scintillation material using the detector.

Abstract: A lithography apparatus comprises a projection system arranged to transfer a pattern from a patterning device onto a substrate, a carrier, and a drive system for moving the carrier relative to the projection system in a plane defined by reference to orthogonal axes X and Y. The drive system comprises a shuttle moving parallel to the Y-axis, a shuttle connector connecting the shuttle to the carrier, the shuttle connector allowing movement of the carrier in a direction parallel to the X-axis relative to the shuttle, and a shuttle driver driving movement of the shuttle parallel to the Y-axis. The shuttle is located to one side of the carrier in a direction parallel to the X-axis and it is desirable if only one of the shuttle is connected to the carrier.

Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer including first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition including a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.

Abstract: A lithographic apparatus includes a first table to support a substrate; a second table, not being configured to support a substrate, including a sensor unit to sense a property of a patterned beam of radiation from a projection system, the second table to move under the projection system when the first table is moved out from under the projection system during a substrate exchange, the first and second tables being independently movable from each other; and a liquid supply system to supply a liquid to a space between the projection system and the substrate, the first table, and/or the second table, wherein the second table is configured to provide a confining surface at a bottom of a liquid confinement structure when the first table is removed from under the projection system so as to prevent the liquid from leaking out into the remainder of the lithographic apparatus.

Abstract: There is disclosed a lithography or exposure apparatus and system, a method of calibrating a lithography or exposure apparatus, and a device manufacturing method. In an embodiment, there is provided an exposure system including a first exposure apparatus and a second exposure apparatus, wherein a data processing device of each of the first and second apparatuses is configured to calculate a control signal using a response function; the combined performance of the programmable patterning device and projection system of each of the first and second apparatuses differs, at least due to manufacturing error; and the response function used by the first apparatus is identical to the response function used by the second apparatus.

Abstract: A lithographic apparatus comprising a projection system, and a liquid confinement structure configured to at least partly confine immersion liquid to an immersion space defined by the projection system, the liquid confinement structure and a substrate and/or substrate table is disclosed wherein a measure is taken to reduce the effect of droplets and/or a liquid film on the last element of the projection system.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the device being capable of imparting the beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a stage system to position the table relative to a reference structure; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; an optical measurement system including a sensor part and an optical part, the optical part being configured to optically interact with the patterned radiation beam and to transmit a result from the interaction as output to the sensor part, wherein the optical part is arranged on the table, and the sensor part is arranged on the stage system or the reference structure.